FTLCD工藝制程簡(jiǎn)介.ppt

1、2021年2月23日星期二10時(shí)25分7秒,2009年04月21日,TFT-LCD 工藝制程簡(jiǎn)介,周剛,周剛09-4-19編寫,Contents,2,1,3,Array process,Module Process,Cell Process,TFT LCD,客戶導(dǎo)向，團(tuán)結(jié)協(xié)作,Dept,Every Process is important,天馬顯示屏無(wú)處不在,精益生產(chǎn)，精益管理,Team work,TFT-LCD,COG,Recipe,OIC,STK,ODF,ADI,TFT-LCD ENGLISH,一：Array Process,ARRAY,生產(chǎn)計(jì)劃,PHOTO,WET,CVD,PVD,DRY

2、,Organization,Array Layout,TFT ARRAY PROCESS,TFT Structure,Deposit and pattern gate metal Functions: Gate of TFT Select lines Bottom electrode of storage capacitor Metal options: Ti/Al/Ti Al/Mo Cr Mo,a-Si TFT array process step 1,a-Si TFT array process step 2,Deposition of SiN/a-Si/n+ by PECVD, patt

3、erning of a-Si SiN is gate dielectric and storage capacitor dielectric Selective etch of a-Si SiN is not etched,SiN,a-Si/n,a-Si TFT array process step 3,Deposition and patterning of source/drain metal Functions: Source and drain metal Data line metal Metal options Ti/Al/Ti or Ti/Al Cr Mo or Mo/Al Ba

4、ck etch of n+ a-Si from channel area,a-Si TFT array process step 4,Deposition and patterning of passivation SiN by PECVD Function: Passivate TFT,a-Si TFT array process step 5,Deposition and patterning of ITO Function: Pixel electrode Top electrode of storage capacitor,TFT ARRAY PROCESS_PVD/CVD,Used

5、for ITO (Indium Tin Oxide transparent conductor) and for metals (Al, Mo, Cr, etc.,DC Sputter deposition,100-1000V,PVD原理,AKT-5500,PECVD (即等離子體增強(qiáng)化學(xué)氣相沉積) 工作原理:采用等離子輔助對(duì)化合物進(jìn)行催化分解 目的: 利用等離子體輔助活化反應(yīng)氣體,降低反應(yīng)溫度,改善薄膜質(zhì)量,PECVD原理,溫度 氣體流量比 (Si:H,N:H,Si:N) RF Pressure Spacing (上下電極間距,影響成膜工藝的主要參數(shù),周剛09-4-19編寫,TFT ARRA

6、Y PROCESS_PHOTO,SLIT COATER,EXPOSURE CANON MPA6000,stage,Nozzle,Slit Coater & DP,DP,MPA6000 Exposure unit,TP & OL Mark,OL,TP,TFT ARRAY PROCESS_WET,Stripper,Wet etcher,TFT ARRAY PROCESS_DRY,DET原理,利用Plasma將反應(yīng)氣體解離，ion轟擊與radicals反應(yīng)將Film移除，真空下進(jìn)行,RIE：指的是Reactive ion etching，即反應(yīng)離子刻蝕,目的 蝕刻終點(diǎn)檢測(cè)。,原理 利用從蝕刻中開(kāi)始到

7、結(jié)束為止特定的波長(zhǎng)的光強(qiáng)度的變化，檢測(cè)出蝕刻的最合適的終點(diǎn),Array Tester,將TFT Array Panel進(jìn)行測(cè)試，如果有短路（SHORT),或是短路(OPEN),就將坐標(biāo)點(diǎn)記錄下來(lái)，傳給Laser Repair（激光修復(fù)機(jī)）修復(fù)之,1.測(cè)量元件導(dǎo)通電流,ION 2.測(cè)量元件截止電流,IOFF 3.測(cè)量切入(CUT IN)電壓VT 4.測(cè)量電壓電流曲線TV CURVE,TEG,TAKE A BREAK,QUESTION AND ANSWER,CF/Color Filter,LC,Sealant,Spacer in Seal,Seal whit AU Ball,Spacer,PI,T

8、FT Glass,Polarizer,Panel 制 做 完 成,周剛09-4-19編寫,二：Cell Process,PI前清洗,CF,TFT,PI涂布,預(yù)烤,固烤,配向,PI Line,Rubbing Line,Rubbing后清洗,UV照射,框膠,點(diǎn)膠,Seal Oven,液晶滴下,CF,TFT,ODF Line,襯墊料,貼合,一次切割（自動(dòng),二次切割（手動(dòng),Cleaner,POL Attach,CELL,CF,TFT,Trimmer,CELL工藝流程,Scraper Type,Doctor Roll,Dispenser,APR 版,APR: Asahi Photosensitive R

9、esin,PI Coater,Process,PI Coater要求特性,Rubbing,Rubbing 動(dòng)作,摩擦輪,平臺(tái),玻璃,Process,Spacer Spray,Short Dispenser,Seal Dispenser,LC Dispenser,UV CURE,C F 上基板,TFT 下基板,Assembly,Process,ODF制成,1,2,Process,Scriber,Zero level detect,工作臺(tái)運(yùn)動(dòng)方向及速度,切割過(guò)程,Process,Process,E-C-P,Length Grinding,Width Grinding,In,Out,Edge Grind (Skip,Process,Cleaner,Process,POL Attach,側(cè)面動(dòng)作示意,正面動(dòng)作示意,POL Attach,Process,周剛09-