SPI80N06S2L-05中文資料

1、SPI80N06S2L-05中文資料SPP80N06S2L-05,SPB80N06S2L-05Opti MOS ? Power-TransistorProduct Summary V DS55V R DS(on) max. SMD version 4.5m?ID80AFeature? N-Channel? Enhancement mode ? Logic Level ? Avalanche rated ? d v /d t ratedP- TO263 -3-2P- TO262 -3-1P- TO220 -3-1Marking 2N06L052N06L052N06L05TypePackageOr

2、dering Code SPP80N06S2L-05P- TO220 -3-1Q67040-S4246SPB80N06S2L-05P- TO263 -3-2Q67040-S4256SPI80N06S2L-05P- TO262 -3-1Q67060-S7422Maximum Ratings , at T j = 25 C, unless otherwise specified ParameterSymbol Value Unit Continuous drain current 1)T C =25CI D8080APulsed drain currentT C =25CI D puls 320A

3、valanche energy, single pulseI D =80 A , V DD =25V, R GS =25?E AS 800mJRepetitive avalanche energy, limited by T jmax 2)E AR 30Reverse diode d v /d tI S =80A, V DS =44V, d i /d t =200A/s, T jmax =175Cd v /d t 6kV/s Gate source voltage V GS 20V Power dissipationT C =25CP tot 300W Operating and storag

4、e temperature T j , T stg-55. +175C IEC climatic category; DIN IEC 68-155/175/56SPP80N06S2L-05,SPB80N06S2L-05Thermal CharacteristicsParameter Symbol Values Unitmin.typ.max. CharacteristicsThermal resistance, junction - case R thJC -0.30.5K/W Thermal resistance, junction - ambient, leaded R thJA-62SM

5、D version, device on PCB: min. footprint 6 cm2 cooling area 3)R thJA-6240Electrical Characteristics, at T j = 25 C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max. Static CharacteristicsDrain-source breakdown voltageV GS=0V, I D=1mAV(BR)DSS55-V Gate threshold voltage, V GS = V DSI

6、 D=250AV GS(th) 1.2 1.62Zero gate voltage drain current V DS=55V, V GS=0V, T j=25CV DS=55V, V GS=0V, T j=125C2)I DSS-0.0111100AGate-source leakage currentV GS=20V, V DS=0VI GSS-1100nADrain-source on-state resistance V GS=4.5V, I D=80AV GS=4.5V, I D=80A, SMD version R DS(on)-m?Drain-source

7、on-state resistance4) V GS=10V, I D=80AV GS=10V, I D=80A, SMD version R DS(on)-4.51Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry I D= 173A at 25C, for detailed information see app.-note ANPS071E available at /doc/c48d398a71fe910ef12df8eb.h

8、tml/optimos2Defined by design. Not subject to production test.3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air.4Diagrams are related to straight lead versionsSPP80N06S2L-05,SPB80N06S2L-05Electrical Characte

9、risticsParameter Symbol Conditions Values Unitmin.typ.max. Dynamic CharacteristicsTransconductance g fs V DS2*I D*R DS(on)max,I D=80A76152-SInput capacitance C iss V GS=0V, V DS=25V,f=1MHz -57007530pFOutput capacitance C oss-13301760 Reverse transfer capacitance C rss-360540Turn-on delay time t d(on

10、)V DD=30V, V GS=10V,I D=80A,R G=1.3?-2538nsRise time t r-93140 Turn-off delay time t d(off)-67100Fall time t f-90135Gate Charge CharacteristicsGate to source charge Q gs V DD=44V, I D=80A-1925nC Gate to drain charge Q gd-6090 Gate charge total Q g V DD=44V, I D=80A,V GS=0 to 10V-170230 Gate plateau

11、voltage V(plateau)V DD=44V, I D=80A- 3.3-V Reverse DiodeInverse diode continuousforward currentI S T C=25C-80AInv. diode direct current, pulsed I SM-320 Inverse diode forward voltage V SD V GS=0V, I F=80A-0.9 1.3VReverse recovery time t rr V R=30V, I F=l S,d i F/d t=100A/s -6580nsReverse recovery ch

12、arge Q rr-125160nCSPP80N06S2L-05,SPB80N06S2L-051 Power dissipationP tot = f (T C)parameter: V GS 4 VSPP80N06S2L-05Ptot2 Drain currentI D= f (T C)parameter: V GS 10 VID4 Max. transient thermal impedanceZ thJC = f (t p)parameter : D = t p/T 101010101010110K/WSPP80N06S2L-05ZthJC3 Safe operating areaI D

13、 = f ( V DS )parameter : D = 0 , T C = 25 C3 SPP80N06S2L-05IDSPP80N06S2L-05,SPB80N06S2L-055 Typ. output characteristicI D = f (V DS); T j=25Cparameter: t p = 80 sID6 Typ. drain-source on resistanceR DS(on) = f (I D)parameter: V GSm?SPP80N06S2L-05RDS(on)7 Typ. transfer characteristicsI D= f ( V GS );

14、 V DS 2 x I D x R DS(on)maxparameter: t p = 80 sID8 Typ. forward transconductanceg fs = f(I D); T j=25Cparameter: g fsgfsSPP80N06S2L-05,SPB80N06S2L-059 Drain-source on-state resistance R DS(on) = f (T j )parameter : I D = 80 A, V GS = 10 Vm ?17SPP80N06S2L-05R D S (o n)10 Typ. gate threshold voltage

15、V GS(th) = f (T j )parameter: V GS = V DSV V G S (t h )11 Typ. capacitances C = f (V DS )parameter: V GS =0V, f =1 MHz10 10 10 10 pFC12 Forward character. of reverse diode I F = f (V SD )parameter: T j , t p = 80 s10 10 10 3 10 ASPP80N06S2L-05I FSPP80N06S2L-05,SPB80N06S2L-0513 Typ. avalanche energyE

16、 AS = f (T j)par.: I D = 80 A , V DD = 25 V, R GS = 25 ?mJEAS14 Typ. gate chargeVGS= f (Q Gate)parameter: I D = 80 A pulsedVSPP80N06S2L-05VGS15 Drain-source breakdown voltageV(BR)DSS = f (T j)parameter: I D=10 mASPP80N06S2L-05V(BR)DSSSPP80N06S2L-05,SPB80N06S2L-05 Published byInfineon Technologies AG

17、,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 Mnchen? Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics.Terms of delivery and rights to technical change rese

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