適合學(xué)術(shù)報(bào)告的PPT精美模板

1、Group MeetingDong-Ming Fang April 18, 2008Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeksCompleted 1Read 2Read 3Read 4Downloaded 5Conceiving 6Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeksv Completed PPT file for oral speechIn EnglishProper ContentsAbout 35

2、 PagesGroup Meeting Dong-Ming Fang April 18,2008Work in the last two weeksv Thesis draft written by Design 1.Fabrication 2.Measured 3.Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeksv Processes Information StoragePECVD:SiO2, Si3N4, SiC Sputter: Ti, Au, Pt, Al, Cr, W, PbLPCVD: Pol

3、ySi, SiO2,Si3N4Si Oxidation:HO,O2,H2OMembraneIon Injection:As+,P+,B+,BF2+ Diffusion: P+,B+AdjustingICP: Si, Ti/Al, Cr/Cu, Cr/Pt, Ti/Pt/Au, Pyrex, SiO2RIE:Si,SiO2,Si3N4, SiO2,Solutions: KOH, BHF, HF, H3PO4EtchingAnode (electrostatic), Au-Si, hotBondingGroup Meeting Dong-Ming Fang April 18,2008Work in

4、 the last two weeks 1. Silicon Microfabrication : . 2. MEMS Reliability: . 3. NSFC Requisition : . 4. Other: Published papers of IMEv References and PPT files Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeksv Safety and Operation HandbookSafetyExit, Fire extinguisher, Shower equi

5、pment, Eye bath systemMSDSHealth hazard, Fire hazard, Specific hazard, ReactivityEtching Room600m2，Etching platform, Shelf, Reagent chemicalsGroup Meeting Dong-Ming Fang April 18,2008Future work in the next weekSimulate .Read Learn Group Meeting Dong-Ming Fang April 18,2008Work in the last weekPasse

6、d the 1 Read references 2Simulated and analyzed 3 Design the fabrication 4Group Meeting Dong-Ming Fang April 18,2008Work in the last weekTuning linearityOutput powerFrequency pullingTuning sensitivityFrequencyrangeHarmonic rejectionFrequency pushingThe main performance figures .Group Meeting Dong-Mi

7、ng Fang April 18,2008Work in the last month 2. 學(xué)習(xí)學(xué)習(xí).仿仿真真 1. 查閱查閱文文獻(xiàn)獻(xiàn) 4. 進(jìn)實(shí)驗(yàn)進(jìn)實(shí)驗(yàn)室室. 3. 工工藝藝制作流程制作流程Group Meeting Dong-Ming Fang April 18,2008Work in the last month實(shí)驗(yàn)實(shí)驗(yàn)相相關(guān)關(guān) 曝光曝光顯顯影影 電鍍電鍍 甩膠甩膠烘烘膠膠 正膠正膠AZ P4903Group Meeting Dong-Ming Fang April 18,2008Work in the last month2008.4.22用用2008.4.25. 大概大概15umG

8、roup Meeting Dong-Ming Fang April 18,2008Work in the last two weeks電鍍電鍍項(xiàng)項(xiàng)目申目申請(qǐng)請(qǐng)申申請(qǐng)請(qǐng)的準(zhǔn)的準(zhǔn)備備3.會(huì)議會(huì)議投稿投稿124Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeks稀釋稀釋HF溶液溶液HF 0.4mol/L，腐蝕速率：腐蝕速率：室溫室溫100nm/s，32度時(shí)度時(shí)200nm/sHF 2.6mol/LHNO3 2.2mol/L32度時(shí)度時(shí)300nm/sTi濕濕法腐法腐蝕蝕50:1:1 H2O:HF:HNO320:1:1H2

9、O:HF:H2O21:1:20HF:H2O2:HNO3Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeksI2 0.09mol/LKI 0.6mol/L腐蝕速率：腐蝕速率：室溫室溫8-15nm/sAu濕濕法腐法腐蝕蝕1:2:1 0I2:KI:H2O25g：7g：100mlBr2:KI:H2O 1:2:3HF:HAc:HNO3Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeks國(guó)家基金對(duì)項(xiàng)目的要求越來(lái)越高國(guó)家基金對(duì)項(xiàng)目的要求越來(lái)越

10、高基礎(chǔ)性基礎(chǔ)性前瞻性前瞻性戰(zhàn)略性戰(zhàn)略性強(qiáng)強(qiáng)調(diào)調(diào)原原創(chuàng)創(chuàng)性性提高提高交叉項(xiàng)目的交叉項(xiàng)目的強(qiáng)度和比例強(qiáng)度和比例強(qiáng)強(qiáng)調(diào)學(xué)調(diào)學(xué)科交叉科交叉Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeks研究實(shí)力研究實(shí)力寫(xiě)作技巧寫(xiě)作技巧創(chuàng)新思想創(chuàng)新思想一新遮百丑一新遮百丑基金有多種基金有多種手段保護(hù)手段保護(hù)創(chuàng)新思想創(chuàng)新思想以往的以往的研究積累研究積累和研究水平和研究水平準(zhǔn)確、清晰、準(zhǔn)確、清晰、具體、可行具體、可行的研究計(jì)劃的研究計(jì)劃申請(qǐng)基金的三要素申請(qǐng)基金的三要素Group Meeting Dong-Ming Fang April

11、18,2008Work in the last two weeks申請(qǐng)書(shū)的核心問(wèn)題申請(qǐng)書(shū)的核心問(wèn)題創(chuàng)創(chuàng)新性新性重要性重要性實(shí)實(shí)用性用性連續(xù)連續(xù)性性可行性可行性做什做什么么（What）-問(wèn)題問(wèn)題的提出的提出為為什什么么（Why）-意意義義分析分析怎么怎么做（做（How）-技技術(shù)術(shù)路路線(xiàn)線(xiàn)工作工作積積累累實(shí)驗(yàn)條實(shí)驗(yàn)條件件人才梯人才梯隊(duì)隊(duì)Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeks立項(xiàng)依據(jù)立項(xiàng)依據(jù)闡述項(xiàng)目對(duì)社會(huì)或經(jīng)濟(jì)的意義闡述項(xiàng)目對(duì)社會(huì)或經(jīng)濟(jì)的意義1項(xiàng)目項(xiàng)目2目標(biāo)目標(biāo)3必要性必要性4Group Meeting

12、 Dong-Ming Fang April 18,2008Work in the last two weeks 研究目標(biāo)研究目標(biāo)1 研究?jī)?nèi)容研究?jī)?nèi)容2 擬解決的關(guān)鍵問(wèn)題擬解決的關(guān)鍵問(wèn)題3 充分反映特色和創(chuàng)新點(diǎn)充分反映特色和創(chuàng)新點(diǎn)4 預(yù)期成果預(yù)期成果5研究方案研究方案Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeks支持條件支持條件以往研究的積累以往研究的積累1研究者的水平和專(zhuān)長(zhǎng)研究者的水平和專(zhuān)長(zhǎng)2研究所需的設(shè)施和設(shè)備研究所需的設(shè)施和設(shè)備3合作研究合作研究4Group Meeting Dong-Ming Fan

13、g April 18,2008Work in the last two weeks題目、內(nèi)容摘要、主題詞題目、內(nèi)容摘要、主題詞研究組組成研究組組成年度計(jì)劃及預(yù)期進(jìn)展年度計(jì)劃及預(yù)期進(jìn)展申請(qǐng)經(jīng)費(fèi)的額度和預(yù)算申請(qǐng)經(jīng)費(fèi)的額度和預(yù)算專(zhuān)家和單位的推薦意見(jiàn)專(zhuān)家和單位的推薦意見(jiàn) 1 2 3 4 5 其它內(nèi)容其它內(nèi)容Group Meeting Dong-Ming Fang April 18,2008Work in the last two monthsPECVD:SiO2, Si3N4, SiC Sputter: Ti, Au, Pt, Al, Cr, W, PbLPCVD: PolySi, SiO2,Si3N

14、4Si Oxidation:HO,O2,H2O薄膜工藝Ion Injection:As+,P+,B+,BF2+ Diffusion: P+,B+調(diào)整參數(shù)ICP: Si, Ti/Al, Cr/Cu, Cr/Pt, Ti/Pt/Au, Pyrex, SiO2RIE:Si,SiO2,Si3N4, SiO2,Solutions: KOH, BHF, HF, H3PO4刻蝕工藝Anode (electrostatic), Au-Si, hot鍵合工藝微微電電子所工子所工藝藝信息信息庫(kù)庫(kù)Group Meeting Dong-Ming Fang April 18,2008Work in the last t

15、wo monthsMEMS和和IC的的關(guān)鍵性關(guān)鍵性差別差別IC無(wú)可動(dòng)部件，而無(wú)可動(dòng)部件，而MEMS 器器件可以產(chǎn)生某種運(yùn)動(dòng)件可以產(chǎn)生某種運(yùn)動(dòng)IC依靠其表面之下的各種效依靠其表面之下的各種效應(yīng)來(lái)工作，而應(yīng)來(lái)工作，而MEMS 基本上基本上是靠表面效應(yīng)工作的器件是靠表面效應(yīng)工作的器件IC本質(zhì)上是平面化的，本質(zhì)上是平面化的，MEMS一般來(lái)說(shuō)卻不是一般來(lái)說(shuō)卻不是Group Meeting Dong-Ming Fang April 18,2008Work in the last two monthsMEMS的優(yōu)勢(shì)的優(yōu)勢(shì)集成化集成化微型化微型化多功能多功能低成本低成本高性能高性能低功耗低功耗Group Me

16、eting Dong-Ming Fang April 18,2008Work in the last two months.組件層面組件層面.系統(tǒng)層面系統(tǒng)層面.元件層面元件層面.技術(shù)層面技術(shù)層面Group Meeting Dong-Ming Fang April 18,2008Work in the last two months.加工技術(shù)加工技術(shù)加工加工技術(shù)技術(shù)加工加工技術(shù)技術(shù)Group Meeting Dong-Ming Fang April 18,2008Work in the last two months單晶硅單晶硅多晶硅多晶硅鍵合技術(shù)鍵合技術(shù)微電子所微電子所四個(gè)體硅四個(gè)體硅標(biāo)準(zhǔn)工藝

17、標(biāo)準(zhǔn)工藝機(jī)械性能好機(jī)械性能好 幾何尺寸大幾何尺寸大浪費(fèi)硅材料浪費(fèi)硅材料與與ICIC兼容不兼容不好好各向同性腐蝕各向同性腐蝕各向異性腐蝕各向異性腐蝕體微加工體微加工Group Meeting Dong-Ming Fang April 18,2008Work in the last two months表面微加工表面微加工兩層多晶硅表面微加工（北大微電子所）兩層多晶硅表面微加工（北大微電子所）三層多晶硅表面微加工（三層多晶硅表面微加工（Berkley SA中心，中心，PolyMUMPs）五層多晶硅表面微加工（美國(guó)五層多晶硅表面微加工（美國(guó)Sandia國(guó)家實(shí)驗(yàn)室）國(guó)家實(shí)驗(yàn)室）兩層兩層MEMS結(jié)構(gòu)：一

18、層是結(jié)構(gòu)材料結(jié)構(gòu)：一層是結(jié)構(gòu)材料,另一層為地面材料另一層為地面材料 多晶硅作為結(jié)構(gòu)層，淀積多晶硅作為結(jié)構(gòu)層，淀積PSG作為犧牲層，作為犧牲層，氮化硅作為電隔離層氮化硅作為電隔離層兩層主要的薄膜層，結(jié)構(gòu)層：多晶硅，兩層主要的薄膜層，結(jié)構(gòu)層：多晶硅，犧牲層：二氧化硅犧牲層：二氧化硅Group Meeting Dong-Ming Fang April 18,2008Work in the last two monthsLIGA技術(shù)技術(shù)LIGA技技術(shù)術(shù)準(zhǔn)準(zhǔn)LIGA技技術(shù)術(shù)SLIGA技技術(shù)術(shù) 電鍍電鍍( Galvanoformung) 壓模壓模(Abformung) 光刻光刻(Lithographie)

19、 Group Meeting Dong-Ming Fang April 18,2008Work in the last two months襯底必須是導(dǎo)體或涂有導(dǎo)電材料襯底必須是導(dǎo)體或涂有導(dǎo)電材料1能能實(shí)現(xiàn)大深寬比結(jié)構(gòu)實(shí)現(xiàn)大深寬比結(jié)構(gòu)2材料廣泛材料廣泛3制作高精度復(fù)雜圖形制作高精度復(fù)雜圖形4易于大批量生產(chǎn)易于大批量生產(chǎn)5不適合制作多層結(jié)構(gòu)不適合制作多層結(jié)構(gòu)6LIGA技術(shù)特點(diǎn)技術(shù)特點(diǎn)Group Meeting Dong-Ming Fang April 18,2008Work in the last two months硅硅/硅鍵合硅鍵合1 1、靈活性和半、靈活性和半導(dǎo)體工藝兼容性導(dǎo)體工藝兼容性2

20、、溫度在鍵合、溫度在鍵合過(guò)程中起著關(guān)鍵過(guò)程中起著關(guān)鍵的作用的作用3、硅片表面的、硅片表面的平整度和清潔度平整度和清潔度 硅硅/玻璃鍵合玻璃鍵合1、兩靜電鍵合、兩靜電鍵合材料的熱膨脹系材料的熱膨脹系數(shù)近似匹配數(shù)近似匹配2、陽(yáng)極的形狀、陽(yáng)極的形狀影響鍵合效果影響鍵合效果3、表面狀況對(duì)、表面狀況對(duì)鍵合力也有影響鍵合力也有影響金屬金屬/玻璃鍵合玻璃鍵合1、電壓、溫度、電壓、溫度和表面光潔度影和表面光潔度影響鍵合反應(yīng)響鍵合反應(yīng)2、離子擴(kuò)散陽(yáng)、離子擴(kuò)散陽(yáng)極氧化影響鍵合極氧化影響鍵合3、鍵合界面處、鍵合界面處產(chǎn)生過(guò)渡層產(chǎn)生過(guò)渡層鍵合技術(shù)鍵合技術(shù)鍵合技術(shù)可以將表面加工和體加工有機(jī)地結(jié)合在一起鍵合技術(shù)可以將表面

21、加工和體加工有機(jī)地結(jié)合在一起Group Meeting Dong-Ming Fang April 18,2008Work in the last two months三維三維MEMSMEMS結(jié)構(gòu)加工中的材料結(jié)構(gòu)加工中的材料結(jié)構(gòu)材料：結(jié)構(gòu)材料：硅、玻璃、硅、玻璃、半導(dǎo)體材料半導(dǎo)體材料犧牲層材料犧牲層材料電絕緣材料電絕緣材料功能材料：功能材料：壓電材料壓電材料磁致伸縮材料磁致伸縮材料形狀記憶合金形狀記憶合金Group Meeting Dong-Ming Fang April 18,2008Work in the last two months金屬：金屬：如如Ti，Al，Cu，Cr 等等非金屬：非金

22、屬：二氧化硅、氮化硅、二氧化硅、氮化硅、碳化硅和磷硅玻璃等碳化硅和磷硅玻璃等有機(jī)物和聚合物：有機(jī)物和聚合物：如光刻膠，聚酰亞胺、如光刻膠，聚酰亞胺、PMMA、SU-8等等犧牲層犧牲層材料材料Group Meeting Dong-Ming Fang April 18,2008Work in the last two months前前CMOS (pre-CMOS) 混合混合CMOS( intermediate-CMOS) 后后CMOS(post-CMOS) CMOS-MEMS技術(shù)技術(shù)：將：將MEMS部分和部分和CMOS電路做在同電路做在同一塊襯底上一塊襯底上 一種是在一種是在CMOS結(jié)構(gòu)層上面再淀

23、積一層結(jié)構(gòu)層的微加工結(jié)構(gòu)層上面再淀積一層結(jié)構(gòu)層的微加工 另一種是直接以另一種是直接以CMOS原有的結(jié)構(gòu)層作為原有的結(jié)構(gòu)層作為MEMS結(jié)構(gòu)層的微加工結(jié)構(gòu)層的微加工 Group Meeting Dong-Ming Fang April 18,2008Work in the future 2. 考考慮慮 1. 完成完成 3. 制作制作 4. 加工加工Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeks Attend 08MEMS training01 Write SC-JRP application02Write a

24、pplication03Design the 04Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeksWrite SC-JRP applicationInput Chinese and English version1Contact with Vincent of NUS2The joint unit not Univ., but A*STAR3Cooperation failed, but be trained4Group Meeting Dong-Ming Fang April 18,2008Work in

25、 the last two weeksWrite .Proposal TitleComplex面向面向Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeks. Aims and SignificanceMain objectives ApplicationsNovelty MethodologyGroup Meeting Dong-Ming Fang April 18,2008Work in the last two weeksThe Develop Current Fabricate .Aims and SignificanceGroup Meeting Dong-Ming Fang April 18,2008Work in the last two weeksMain Objectivesinvestigate .study realize set up Group Meeting Dong-Ming Fang April 18,2008Work in the last two weeksApplicationsMultiband Integration High .RGroup M