trench DMOS introduction-文檔資料

1、10.35um Trench DMOS process introduction2 DMOS introduction and application Trench DMOS device structure Process flow introduction Main important step and issue discussionOUT LINE3 DMOS introduction and application Trench DMOS device structure Process flow introduction Main important step and issue

2、discussion4DMOS-Double Diffused MOS 器件類型特 點應(yīng) 用DMOSDMOS高壓大電流驅(qū)動（器件結(jié)構(gòu)決定漏端能承受高壓，高集成度可在小面積內(nèi)做超大W/L）模擬電路和驅(qū)動，尤其是高壓功率部分，不適合做邏輯處理。CMOSCMOS集成度高，功耗低適合做邏輯處理，一些輸入，也可做輸出驅(qū)動BipolarBipolar兩種載流子都參加導(dǎo)電，驅(qū)動能力強，工作頻率高，集成度低模擬電路對性能要求較高部分(高速、強驅(qū)動、高精度）DMOS introduction and application5IGBTLDMOS Laterally diffused MOSVDMOS Vertic

3、al diffused MOSDMOS introduction and application6UNIT CELL SEMTOP-VIEWWIRE BONDTrench DMOS introduction Gate padSource padSOURCEcurrentGATEEPISUBDRAIN7 DMOS introduction and application Trench DMOS device structure Process flow introduction Main important step and issue discussion8S G N+N-DUGSwhenth

4、e channel change as N type Inversion layer ID UDSID P+Trench DMOS device structureN+P-wellgatedrainsource9 DMOS introduction and application Trench DMOS function Process flow introduction Main important step and issue discussion10Mask introductionZero mask : define the alignment mark areaTO mask : d

5、efine the guard ring (GR) and cell areaTR mask : define the trench area GT mask : define the poly link areaSN mask : define P+ implant area W1 mask : define contact area A1 mask : define bond area PT mask : define P-well implant area Backside : define the drain pad 110.35um Trench DMOS process intro

6、ductionEPI-N, 0.21-0.25ohm.cmSUB,0.001-0.003ohm.cmN+SUB : CZ N 0.001-0.003ohm.cmN- EPI : N 0.21-0.25ohm.cmEPISUB編批平邊打標(biāo)EPI-N 0.207-0.253 OHM.CM擦片10#清洗B-CLEAN120.35um Trench DMOS process-wafer startEPI-N, 0.21-0.25ohm.cmSUB,0.001-0.003ohm.cmN+N- Initial oxide: 350+/-50AEPISUB吸雜氧化R0007測產(chǎn)品片300-350-400A1

7、30.35um Trench DMOS process-Zero markN- N+EPISUBPRZero mark photoPR alignment mark areaZERO 光刻S3#/CUNCN01 ZERO顯檢140.35um Trench DMOS process-Zero markN- N+EPISUB1500APRZero mark etch : SI loss 1500APR alignment mark areaZERO層腐蝕Si loss 1200A檢查15EPI-N, 0.21-0.25ohm.cmSUB,0.001-0.003ohm.cmN+N- 0.35um T

8、rench DMOS process-Zero markPhoto stripalignment mark areaEPISUB干法去膠BC濕法去膠PWSA01Si深度測量1500+/-200A檢查16N- N+EPISUBoxide remove : wet etch 350A0.35um Trench DMOS process-pad oxide removealignment mark area濕法ZERO ETCHBOE 60秒(浸潤)檢查17N- N+EPISUB OXIDE:6500AWet oxide 6500A0.35um Trench DMOS process-GR oxid

9、eCircuit area清洗B-CLEAN場氧化R0217測產(chǎn)品片5600-6500-7400A 118 OXIEDE:6500A0.35um Trench DMOS process-TO photo 3.0umPR TO photo : ADI 3.0+/-0.3umGR areaCell areaCELL3.0umGRN- N+EPISUB清洗S/P5*1SDG光刻32#/CUNC01.TO測條寬2.7-3-3.3UM LCF顯檢19GR WET ETCH : AEI 2.3+/-0.3um0.35um Trench DMOS process-GR etchN- N+EPISUB3.0u

10、mPR 2.3um閃氧DESCUM濕法腐蝕540秒 (浸潤)檢查殘氧測量0-20A 2200.35um Trench DMOS process-GR PR strip N- N+EPISUBGR oxideCELL2.3umGRPR strip干法去膠BC濕法去膠PR-L/R檢查測條寬2-2.3-2.6UM LCF底部210.35um Trench DMOS process-Hard MaskLPTEOS 6500AN- N+EPISUBLPTEOS:6500ALPTEOSGR oxide清洗B-CLEANLPTEOSR0811測控制片5900-6500-7100A增密R0652220.35u

11、m Trench DMOS process-Hard Mask photoHard mask photo : ADI 0.35+/-0.03umN- N+EPISUBPRTRENCH光刻54# / CUNC01.TR套刻測量0.15UM測條寬0.32-0.35-0.38UM顯檢230.35um Trench DMOS process-Hard Mask etchHard mask dry etchN- N+EPISUBOE 500APRTEOS 腐蝕HME6500檢查殘氧測量0-50A 224PR strip N- N+EPISUB0.35um Trench DMOS process-Hard

12、 Mask PR strip干法去膠BC濕法去膠PR-L/R清洗B-CLEAN250.35um Trench DMOS process- Trench etch Trench etch : AEI 0.48+/-0.05umN- N+SUBTrench腐蝕NEW-BYD13K檢查濕法去膠PR-L/RSOG濕法腐蝕20:1BOE 2MIN清洗B-CLEAN清洗D-CLEAN測條寬0.43-0.48-0.53UMTENC監(jiān)測260.35um Trench DMOS process- N- IMP N- N+SUB00-P/100KEV/1E12N-N- IMP注 P+00-P/100KEV/1E1

13、2清洗D-CLEAN27SAC oxide 1200A0.35um Trench DMOS process- SAC oxideN- N+N-犧牲氧化R0038測控制片1080-1200-1320A280.35um Trench DMOS process- SAC oxide removeN- N+Hard mask and SAC oxide removeGR oxideRemain 5000AN-濕法腐蝕WE56殘氧測量0-20A 2殘氧測量4500-5000-5500A 1清洗B-CLEAN290.35um Trench DMOS process- Gate oxideGate oxid

14、e 500+/50AN- N+GR oxideN-柵氧R0344測產(chǎn)品片450-500-550A 2300.35um Trench DMOS process- DOPE POLYN- N+polyDope Poly 7k : 10-14-18/GR oxideN-原位摻雜R0445測控制片(膜厚)6300-7000-7700A測控制片(電阻)10-14-18/310.35um Trench DMOS process- POLY photoN- N+polyPOLY photo : ADI 1.0+/-0.1um N-PRPOLY1光刻32#/CUNC01.GT套刻測量0.15UM測條寬0.9-

15、1-1.1UM顯檢320.35um Trench DMOS process- POLY etchN- N+Poly etch : AEI 1.0+/-0.1umN-PRPOLY腐蝕POLY7000檢查殘氧測量480-530-580A 3漂洗WE99330.35um Trench DMOS process- POLY PR stripN- N+PR stripN-干法去膠BC濕法去膠PWSA01檢查殘氧測量430-480-530A 3殘氧測量4250-4750-5250 1濕法腐蝕WE-N36殘氧測量100-200-300A 3測條寬0.9-1-1.1UMKLA監(jiān)測340.35um Trench

16、 DMOS process- PWELL IMP00-B/50KEV/2E13N- N+P WELL IMPN-清洗S/P5*1P阱曝光32#/CUNC01.PT套刻測量0.15UM測條寬0.9-1-1.1UM顯檢注 B+00-B/50KEV/2E13350.35um Trench DMOS process- PWELL drive in N+P-Drive in : 1150C,30minN-N-干法去膠BC濕法去膠PWSA01檢查清洗S/P5*1推阱R0937測控制片120-150-180A360.35um Trench DMOS process profile-NSD photo N+P

17、-NSD photoPRN-N-NSD曝光32#/CUNC01.SN套刻測量0.12UM測條寬0.8-0.9-1UM顯檢前烘W370.35um Trench DMOS process profile-NSD IMPN- N+P-00-As/80KEV/1E16NSD IMPPRN-N-注 As+00-AS/80KEV/1E16380.35um Trench DMOS process profile-NSD PR stripN- N+P- PR stripN-N-干法去膠DE濕法去膠PWSA01檢查清洗S/P5*1390.35um Trench DMOS process profile-NSD

18、anneal N+P-NSD anneal : 950C , 60minN-N+N-退火R0729400.35um Trench DMOS process profile-ILDN- N+P-BP 7500+TEOS 13KN-N+Total 20.5KN-USG1500 DEPUSG1500USG1500測產(chǎn)品片TF$FILED1UBPSG6000 DEPBPSG6000測產(chǎn)品片6525-7500-8475A 3回流R0675清洗PR-L/R檢查TEOS淀積TEOS13K DEP測產(chǎn)品片-SI19525-20500-21475A3-SI擦片12#41N- N+P-N-N+Oxide CMP0

19、.35um Trench DMOS process profile-Oxide CMPILD 18.5KN-CMPD1 OCMP TO 18500A檢查顯微鏡檢查測產(chǎn)品片-SITENC監(jiān)測42N- N+P-N-N+Contact photo : ADI 0.35+/-0.03um0.35um Trench DMOS process profile-Contact photoPRN-孔1光刻54# / CUNC01.W1套刻測量0.10UM測條寬0.32-0.35-0.38UM顯檢43N- N+P-N-N+Contact oxide etch0.35um Trench DMOS process

20、profile-Contact etchPROE 500AN-ANISO孔腐蝕EWIN10K檢查殘氧測量0-50A 344 N+P-N+0.35um Trench DMOS process profile-Contact etchContact SI etch : SI loss 5000A , AEI 0.35+/-0.05umPRN-5000AN-ANISO孔腐蝕ESI-5KA檢查45 N+P-N+0.35um Trench DMOS process profile-Contact PR stripN- PR stripN-干法去膠BC濕法去膠PWSA0146N- N+P-N-N+0.35

21、um Trench DMOS process profile-P+ IMPP+ IMP00-BF2/100KEV/5E1400- B /150KEV/5E14P+P+N-47N- N+P-N-N+0.35um Trench DMOS process profile-P+ annealP+ anneal : 800C ,20SP+N-檢查測條寬0.3-0.35-0.4UMRTA退火HJRTA.348N- N+P-N-N+P+TI 400A /TIN 600AW plug0.35um Trench DMOS process profile-W plugN-送濺射漂洗WE41-RIMP TI-TIN

22、TI400-TIN600RTA退火HJRTA.1KLA監(jiān)測W淀積W400049N- N+P-N-N+P+W CMP0.35um Trench DMOS process profile-W CMPN-W-CMPWCMP檢查AIT/KLA監(jiān)測50N- N+P-N-N+P+TI 400/TIN600ALCu 30K0.35um Trench DMOS process profile-AL sputterN-TI-TINTI400-TIN400ALSICUALCU30K擦片78#SST清洗5MIN51N- N+P-N-N+P+0.35um Trench DMOS process profile-AL

23、photoPRAL photoN-AL1曝光38#/CUNC01.A1顯檢52 N+P-N-N+P+0.35um Trench DMOS process profile-AL etchPRAL ETCH N-AL1曝光38#/CUNC01.A1顯檢閃氧DESCUMUV固膠DAL1腐蝕TRENCH-30KSST清洗HOT AL檢查合金R085253N- N+P-N-N+P+PR strip 0.35um Trench DMOS process profile-AL PR stripN-54N- N+P-N-N+P+0.35um Trench DMOS process profile-Taping

24、TapingN-貼膜TAPE檢查顯微鏡檢查55N- N+P-N-N+P+0.35um Trench DMOS process profile-backside SI etchBackside SI etchN-背面減薄230UM檢查顯微鏡檢查測產(chǎn)品片220-230-240UM56N- N+P-N-N+P+Detaping0.35um Trench DMOS process profile-Detaping N-揭膜DETAPE背面SI濕法腐蝕WSI-08檢查顯微鏡檢查57N- N+P-N-N+P+Ti NiAgGRILDWGR oxideP-wellN+Gate polyGate PADSou

25、rce PADDrain PADBackside clean and sputter0.35um Trench DMOS process profile-backside sputterpolyN-漂洗2MIN背面濺射E:TI-NI-AG檢查顯微鏡檢查參數(shù)測試CUNC01出片檢查58 DMOS introduction and application Trench DMOS feature Process flow introduction Main important step and issue discussion59Trench etch1.Trench profile couldnt be too sloping (angle85