GB/T 44334-2024埋層硅外延片

ICS

29.045

CCS

H82

中華人民共和國國家標(biāo)準(zhǔn)

GB/T44334—2024

埋層硅外延片

Siliconepitaxialwaferswithburiedlayers

2024-08-23發(fā)布2025-03-01實(shí)施

國家市場監(jiān)督管理總局發(fā)布

國家標(biāo)準(zhǔn)化管理委員會(huì)

GB/T44334—2024

目次

前言

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Ⅲ

1

范圍

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1

2

規(guī)范性引用文件

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3

術(shù)語和定義

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4

產(chǎn)品分類

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5

技術(shù)要求

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2

5.1

襯底材料

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2

5.2

外延層

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2

5.3

幾何參數(shù)

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4

5.4

表面金屬

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4

5.5

表面質(zhì)量

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4

5.6

邊緣

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5

5.7

其他

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5

6

試驗(yàn)方法

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5

7

檢驗(yàn)規(guī)則

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6

7.1

檢查與驗(yàn)收

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6

7.2

組批

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6

7.3

檢驗(yàn)項(xiàng)目

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6

7.4

取樣

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6

7.5

檢驗(yàn)結(jié)果的判定

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6

8

標(biāo)志、包裝、運(yùn)輸、貯存和隨行文件

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7

8.1

標(biāo)志和包裝

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7

8.2

運(yùn)輸和貯存

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8

8.3

隨行文件

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8

9

訂貨單內(nèi)容

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8

Ⅰ

GB/T44334—2024

前言

本文件按照GB/T1.1—2020《標(biāo)準(zhǔn)化工作導(dǎo)則第1部分：標(biāo)準(zhǔn)化文件的結(jié)構(gòu)和起草規(guī)則》的規(guī)

定起草。

請(qǐng)注意本文件的某些內(nèi)容可能涉及專利。本文件的發(fā)布機(jī)構(gòu)不承擔(dān)識(shí)別專利的責(zé)任。

本文件由全國半導(dǎo)體設(shè)備和材料標(biāo)準(zhǔn)化技術(shù)委員會(huì)（SAC/TC203）與全國半導(dǎo)體設(shè)備和材料標(biāo)準(zhǔn)

化技術(shù)委員會(huì)材料分技術(shù)委員會(huì)（SAC/TC203/SC2）共同提出并歸口。

本文件起草單位：南京國盛電子有限公司、西安龍威半導(dǎo)體有限公司、上海晶盟硅材料有限公司、

浙江金瑞泓科技股份有限公司、中環(huán)領(lǐng)先半導(dǎo)體材料有限公司、浙江麗水中欣晶圓半導(dǎo)體科技有限公

司、南京盛鑫半導(dǎo)體材料有限公司、有色金屬技術(shù)經(jīng)濟(jì)研究院有限責(zé)任公司、河北普興電子科技股份有

限公司、蓋澤華矽半導(dǎo)體科技（上海）有限公司、賽晶亞太半導(dǎo)體科技（浙江）有限公司。

本文件主要起草人：仇光寅、王銀海、謝進(jìn)、駱紅、賀東江、馬林寶、顧廣安、李慎重、李春陽、

徐西昌、徐新華、袁夫通、劉小青、米姣、周益初、張強(qiáng)。

Ⅲ

GB/T44334—2024

埋層硅外延片

1范圍

本文件規(guī)定了埋層硅外延片的產(chǎn)品分類、技術(shù)要求、試驗(yàn)方法、檢驗(yàn)規(guī)則及標(biāo)志、包裝、運(yùn)輸、貯

存、隨行文件和訂貨單內(nèi)容。

本文件適用于具有埋層結(jié)構(gòu)的硅外延片的生產(chǎn)制造、測(cè)試分析和質(zhì)量評(píng)價(jià)，產(chǎn)品主要用于制作集成

電路芯片和半導(dǎo)體分立器件。

2規(guī)范性引用文件

下列文件中的內(nèi)容通過文中的規(guī)范性引用而構(gòu)成本文件必不可少的條款。其中，注日期的引用文

件，僅該日期對(duì)應(yīng)的版本適用于本文件；不注日期的引用文件，其最新版本（包括所有的修改單）適用

于本文件。

GB/T1550非本征半導(dǎo)體材料導(dǎo)電類型測(cè)試方法

GB/T2828.1—2012計(jì)數(shù)抽樣檢驗(yàn)程序第1部分：按接收質(zhì)量限（AQL）檢索的逐批檢驗(yàn)抽樣

計(jì)劃

GB/T6617硅片電阻率測(cè)定擴(kuò)展電阻探針法

GB/T6624硅拋光片表面質(zhì)量目測(cè)檢驗(yàn)方法

GB/T12964硅單晶拋光片

GB/T13389摻硼摻磷摻砷硅單晶電阻率與摻雜劑濃度換算規(guī)程

GB/T14139硅外延片

GB/T14141硅外延層、擴(kuò)散層和離子注入層薄層電阻的測(cè)定直排四探針法

GB/T14142硅外延層晶體完整性檢驗(yàn)方法腐蝕法

GB/T14146硅外延層載流子濃度的測(cè)試電容?電壓法

GB/T14264半導(dǎo)體材料術(shù)語

GB/T14847重?fù)诫s襯底上輕摻雜硅外延層厚度的紅外反射測(cè)量方法

GB/T19921硅拋光片表面顆粒測(cè)試方法

GB/T24578硅片表面金屬沾污的全反射X光熒光光譜測(cè)試方法

GB/T29507硅片平整度、厚度及總厚度變化測(cè)試自動(dòng)非接觸掃描法

GB/T32280硅片翹曲度和彎曲度的測(cè)試自動(dòng)非接觸掃描法

GB/T35310200mm硅外延片

GB/T39145硅片表面金屬元素含量的測(cè)定電感耦合等離子體質(zhì)譜法