《半導(dǎo)體工程專業(yè)英語》課件-2. 半導(dǎo)體材料

微專業(yè)---半導(dǎo)體制造技術(shù)課程：半導(dǎo)體工程專業(yè)英語ContentsSemiconductorProperties半導(dǎo)體特性01SemiconductorMaterials半導(dǎo)體材料02SemiconductorDeviceandHowTheyareUsed半導(dǎo)體器件及其使用03ProcessTechnology工藝技術(shù)04FabricationProcesses制造工藝05SemiconductorMaterialsandProcessCharacterization半導(dǎo)體材料與工藝表征06SemiconductorMaterials2.1CrystalStructureofSolids2.2ElementsofSemiconductorMaterialSystem2.3InorganicSemiconductors2.4MaterialsSelectionCriteria2.5OrganicSemiconductors2.6BulkSingle-CrystalFormation2.7Thin-FilmSingleCrystalFormation2.8Substrates2.9Thin-FilmInsulators2.10Thin-FilmConductors022

SemiconductorMaterials1ChapterOverview

Followinganoverviewofthepropertiesofthesolidsknownassemiconductorsinthepreviouschapter,thegoalofthischapteristointroduce

semiconductormaterialswhichareusedtomanufacturedevicesperforming

varietyofelectronicandphotonicfunctions./,fo?'tɑn?k/光子2Introduction

Thediscussionofthecrystalstructureofsolidsisconcernedwiththeway

atomscomprisingasolidarespatiallydistributed.Inthecaseofsemiconductorsthisissueisoffundamentalimportanceasthewayinwhichatoms

inanygivenmaterialareconfiguredwithrespecttoeachotherisamongkey

factorsdefiningelectricalconductivityofsemiconductors,andhence,definingthewayanygivensemiconductormaterialisusedtoconstructfunctional

devices./k?n?f?ɡj?rd/排布2

SemiconductorMaterials

2.1CrystalStructureofSolids/?spe???li/空間3Introduction

Anunderlyingconsiderationinthisregardistheextenttowhichspatial

distributionofatomsinthesolidisordered,andwhatisthegeometricalnatureoftheensuing

crystallographicorder.Twodistinctcasesarerepresented

by(i)crystalsfeaturingalong-rangeperiodicorderand(ii)non-crystalline

materials,commonlyreferredtoasamorphousmaterialsinwhich,incontrasttocrystals,atomicarrangementexhibitsnoperiodicityorlong-range

order.Anamorphous,non-crystallinematerial

doesnotfeaturealong-rangeorderatall./??nd?r?la???/根本的2

SemiconductorMaterials

2.1CrystalStructureofSolids/?spe??l/空間的/?p?ri?ɑ?d?k/周期的/d??st??kt/不同的/,kr?st?lɑ'ɡr?f?k/結(jié)晶的/?p?ri??d?s?ti/周期性/?n?su???/隨之產(chǎn)生的4IntroductionTwo-dimensionalrepresentationsofcrystallographicstructureofsolids,

(a)single-crystalmaterial,(b)polycrystalline/multicrystallinematerial,and

(c)non-crystalline,amorphous,material.2

SemiconductorMaterials

2.1CrystalStructureofSolids/,kr?st?lɑ'ɡr?f?k/結(jié)晶的5Text

Inthefollowupdiscussionthetermcrystallatticeisusedinreferencetotherepeatedthree-dimensionalarrangementofatomsinthecrystal.Anycrystallatticeiscomprisedoftheelementalcellsreproducedthroughoutthematerial.Elementalcellsmayappearinthevarietyofformswhichfallintosevenbasicclasses./??re?nd?m?nt/排列2

SemiconductorMaterials

2.1CrystalStructureofSolids2.1.1

Crystallattice/?ri?pr??dju?st/重現(xiàn)晶胞6Thephysicaldimensionoftheunitcellisdefinedbythelatticeconstants.Inthecaseofcubiccrystals,singlelatticeconstanta(Fig(a))whichinthecaseofsiliconisa=0.543nmandinthecaseofgallium

arsenideisa=0.564nm,determinesthelattice.Inthecaseofhexagonal

wurtzitecrystalstructure,twoconstantsaandcareneededtodefinephysicaldimensionsofthecell(Fig(b))./?l?t?s?kɑ?nst?nts/晶格常數(shù)2

SemiconductorMaterials

2.1CrystalStructureofSolids2.1.1

Crystallattice/?kju?b?k/立方/?ɡ?li?m/鎵Schematicrepresentationof(a)face-centeredcubiccelland(b)hexagonalcell./?ɑrs??na?d/砷化物/?w?rt?sa?t/纖鋅礦/heks??ɡ?nl/六方晶系/heks??ɡ?nl/六方晶系7Byconnectingpointsonthemaincrystallographic

axesofthesinglecrystalmaterial,variouscrystallographicplaneswithinthecrystalcanbeidentified.CoordinatesdeterminingorientationofthespecificcrystallographicplaneinthecrystalareknownasMillerindices.Millerindicesinvolvethreedigits,either1or0,e.g.(111)or(100),whichdefinehowtheplaneintersectsthemaincrystallographicaxesofthecrystal.2

SemiconductorMaterials

2.1CrystalStructureofSolids2.1.1

Crystallattice/

??ks?z/坐標(biāo)軸IllustrationsshowingtheuseofMillerindicestodefinecrystallographicplanesinthecubiccell./?m?l?r??nd?si?z/米勒指數(shù)/??nt?r?sekts/相交/ko????rd?ne?ts/坐標(biāo)/,kr?st?lɑ'ɡr?f?k/結(jié)晶的/ple?nz/位面8Text

Dependingontheirnature,defectsobservedinsemiconductorcrystalsfallintofourclasseswhichincludepointdefects,linedefects,planardefects,andvolumedefects./?ple?n?r/平面的2

SemiconductorMaterials

2.1CrystalStructureofSolids2.1.2

StructuraldefectsSchematicrepresentationoffourtypesofstructuraldefectsoccurringin

single-crystalsolids,(a)pointdefect,(b)linedefect,(c)planardefect,and(d)volumedefect./?s?bst??tj???nl/替代的/??nt?r?st??l/間隙的9Introduction

Inordertofullyexploitphysicalpropertiesofsemiconductorsdiscussedin

thepreviouschapter,thecomplexmaterialsystemscomprisedofelements

featuringdesiredcrystalstructureandchemicalcompositionneedtobecreated.Inthissectiontheelementscomprisingsuchcomplexmaterialsystems

areidentifiedanddiscussed.2

SemiconductorMaterials

2.2ElementsofSemiconductorMaterialSystem/?k?spl??t/利用/k?m?pra?zd/包含10Electronicpropertiesinthe

near-surfaceregionofanysolid,includingsemiconductors,departsignificantlyfromthesamepropertiesinthebulk.2

SemiconductorMaterials

2.2ElementsofSemiconductorMaterialSystem/b?lk/主體2.2.1

SurfacesandinterfacesTextIllustrationofbulk,surfaceandnear-surfaceregioninsingle-crystal

semiconductor11

Interfacesaretheintegralpartofanymaterialsystemcomprisedoftwo

andmorematerialswheretheyplaytherolewhichdefinescharacteristicsof

theentiresystem.Asinthecaseofthesurfaces,theeffectofaninterface

betweentwomaterialsexpandsintotheadjacentregions.Ineithercase,interfacerepresentsadiscontinuityofelectrical,optical,mechanical,andthermalpropertiesofthematerialsystem.2

SemiconductorMaterials

2.2ElementsofSemiconductorMaterialSystem/??nt?ɡr?l/必要的2.2.1

SurfacesandinterfacesIllustrationof

interfacebetweentwomaterialsexpendsintotheinterface

regionbeyondsingleatomiclayer./??d?e?s(?)nt

/鄰近的/?d?s?kɑ?nt??nu??ti

/不連續(xù)12Thereisastrongcorrelationbetweenphysicaldimensionsofthepieceofsemiconductormaterialanditselectronicproperties.

Whilegraduallyconfininggeometryofasolidfromthethree-dimensional

bulkrealmtothetwo-dimensionalconfiguration,basicphysicalcharacteristicsofmaterialarechanging.Thechangeswilloccuraccordingtothelaws

ofclassicalphysicsuptothepointwhereattheextremegeometricalconfinement

quantumphenomenatakeovercontrolofthebehavior

ofelectronswhicharenowsubjecttothelawsofquantumphysics.2

SemiconductorMaterials

2.2ElementsofSemiconductorMaterialSystem/k?n?f?ɡj??re??(?)n/結(jié)構(gòu)2.2.2

Thin-filmsText/?s?bd?ekt/服從/?kwɑ?nt?m/量子132

SemiconductorMaterials

2.2ElementsofSemiconductorMaterialSystem2.2.2

Thin-filmsSimplifiedqualitativeillustrationofthechangeinsemiconductorresistivityρa(bǔ)sitsthicknessisdecreasing.14Introduction

Inthischaptersemiconductorsareconsideredintermsof

theirchemicalcompositiondistinguishingbetweeninorganicsemiconductors

andorganicsemiconductors.Amongtheformer,elementalsemiconductors

andcompoundsemiconductorsareconsideredasthedistinctclasses.First,

weconsiderinorganicsemiconductorsunderstoodhereasthesolidswhich

donotcontaincarbon-hydrogen(C-H)bondsintheirstructure.Inorganic

semiconductorsrepresentadominantclassofsemiconductormaterialsupon

whichbroadlyunderstoodsemiconductortechnologywasdevelopedoverthe

years.2

SemiconductorMaterials

2.3InorganicSemiconductors/d??st??ɡw????/有區(qū)別的/??n??r?ɡ?n?k/無機(jī)/d??st??kt/不同的/?ha?dr?d??n/氫/?dɑ?m?n?nt/占主導(dǎo)的15

ElementsformthegroupIVoftheperiodictable

featurefour

valenceelectronsandincludecarbon(C),silicon(Si),germanium(Ge),and

tin(Sn).2

SemiconductorMaterials

2.3InorganicSemiconductors/??r?d??ne?t/來源2.3.1

ElementalsemiconductorsText/d???r?me?ni?m/鍺/?p?ri?ɑ?d?k/周期性的(a)PeriodicTableofElementsand(b)partofitreferredtoas“semiconductorperiodictable”fromwhichelementalandcompoundsemiconductormaterialsoriginate./t?n/錫162

SemiconductorMaterials

2.3InorganicSemiconductors2.3.1

Elementalsemiconductors【Silicon,Si】Siisthemostimportantandthemostwidelyusedsemiconductor

material.

Whatmakessilicon

sospecialisacombinationofabundance(afteroxygen,siliconisthesecondmostcommonelementintheEarth’scrust),lowcostofobtaininghighqualitycrystalsascomparedtootherkeysemiconductors,andoverallcharacteristicsmakingithighlycompatiblewiththeneedsofmasscommercialmanufactureofsemiconductordevices./??b?nd?ns/大量/kr?st/地殼172

SemiconductorMaterials

2.3InorganicSemiconductors2.3.1

Elementalsemiconductors【Germanium,Ge】

Beforesilicontookoverasaleadsemiconductormaterial,germaniumwassemiconductorofchoiceinearlydeviceapplications.Thekeydeficiencyofgermaniumascomparedtosiliconisthefactthatitsnativeoxide,germaniumdioxideGeO2,

isunstableanddecomposesunderthenormalconditionsincludingexposure

towater./?di?k?m?po?z?z/分解/d??f??nsi/缺點(diǎn)/d???r?me?ni?m/鍺

Innature,carbonmostcommonlyappearsintheformofgraphite.Inthethree-dimensionalsingle-crystalconfigurationcarboncrystallizesintheformofadiamond.【Carbon,C】/?ɡr?fa?t/石墨/?da??m?nd/金剛石18

TheIV-IVclassofsemiconductorcompounds

isrepresentedbysiliconcompoundswithcarbon(siliconcarbide,

SiC)andwithgermanium(silicongermanium,SiGe).2

SemiconductorMaterials

2.3InorganicSemiconductors2.3.2

CompoundsemiconductorsText/?kɑ?ba?d/碳化物【IV-IVCompounds】/d???r?me?ni?m/鍺【III-VCompounds】

TheIII-Vcompoundsaretypicallyclassifiedbasedon

thegroupVelementformingacompound

intonitrides,phosphides,

arsenidesandantimonides./?na?tra?dz/碳化物/?fɑs?fa?z/磷化物/?ɑ?rs??na?z/砷化物/??nt?m??na?z/銻化物19

Intermsoftheuseinsemiconductor

devicesthemostcommon2Dstructuresarementionedearlierinthischapter

quantumwellscomprisedofultra-thinlayersofsemiconductorwhichistypicallysandwichedbetweentwoothersemiconductorsfeaturingwiderenergy

gap.2

SemiconductorMaterials

2.3InorganicSemiconductors2.3.3

NanoscaleinorganicsemiconductorsText量子阱【Two-dimensional(2D)materials】(a)Single-atomthickgrapheneisrolledupinto(b)single-walledcarbon

nanotube,CNT.202

SemiconductorMaterials

2.3InorganicSemiconductors2.3.3

Nanoscaleinorganicsemiconductors【One-dimensional(1D)materials】

Theone-dimensionalnanostructures

arerepresentedbynanotubes,mostcommonlycarbonnanotubesreferredto

asCNT,andnanowiresinwhichcasesiliconnanowiresreferred

toasSiNWarethebestdeveloped./n?no?tu?bz/納米管/n?n??wa??rz/納米線Schematicrepresentationof(a)horizontal,(b)verticalSiNW./?h??r??zɑ?nt(?)l/水平的【Zero-dimensional(0D)materials】

Thezero-dimensionalknownasnanodotsorquantum

dots.21Introduction

Asitwaspointedoutearlier,thereisastrongcorrelationbetweenthepropertiesofsemiconductormaterial,andperformanceofdevicesdesignedto

performspecificfunctionswhicharefabricatedusingit.Whatitmeansis

thatsomesemiconductormaterialsbythevirtueoftheirinherentproperties

aresuitableforcarryingoutsomedevicefunctions,whilearenotsuitableto

carryoutsomeotherfunctions.2

SemiconductorMaterials

2.4MaterialsSelectionCriteria/?k??r??le??(?)n/相關(guān)的/virtue/優(yōu)點(diǎn)

/?n?her?nt/固有的實(shí)現(xiàn)7

Table

considersdeviceperformanceimplicationsofthephysicalcharacteristicsofsemiconductormaterialsintroducedinthischapter.2

SemiconductorMaterials

2.4MaterialsSelectionCriteriaText/??mpl??ke??(?)nz/影響222

SemiconductorMaterials

23In-classexercisConnecttheEnglishwords/phrasesandChinesemeaningwithlines.crystaldielectricepitaxygrainboundariesinsulatorlatticeconstantsemiconductsubstratethin-filmareadefect絕緣體襯底半導(dǎo)體薄膜晶格常數(shù)區(qū)域缺陷外延晶體晶界電介質(zhì)24In-classexercisFillintheblankswithproperwordsorphrases.1.defectsobservedinsemiconductorcrystalsfallintofourclasseswhichincludepointdefects,linedefects,

defects,andvolumedefects.

2.Silicon(Si)has

valenceelectrons.3.Carbonnanotubesare

materials.

2

SemiconductorMaterials

2

SemiconductorMaterials

25單詞/短語音標(biāo)中文含義amorphousmaterial/??m??rf?sm??t?ri?l/非晶材料amorphoussilicon/??m??rf?s?s?l?k?n非晶硅antimonide/??nt?m??na?d/銻化物areadefect/?eri??di?fekt/區(qū)域缺陷arsenide/?ɑrs??na?d/砷化物ballistictransport/b??l?st?k?tr?nsp??rt/彈道輸運(yùn)bandgapengineering/b?nd?ɡ?p?end???n?r??/帶隙工程bottom-upprocess/?bɑ?t?m?p?prɑ?ses/自下而上工藝bufferlayer/?b?f?rler/緩沖層KeyTerms26單詞/短語音標(biāo)中文含義bulkwafer/b?lk

?we?f?r/體晶圓buriedoxide/?berid?ɑ?ksa?d/埋氧層carbon-basedcompound/?kɑ?rb?nbe?st?kɑ?mpa?nd/碳基化合物chemicaltransition/?kem?k(?)ltr?n?z??(?)n/化學(xué)轉(zhuǎn)變complexoxide/k?m?pleks?ɑ?ksa?d/復(fù)合氧化物criticalthicknesshc/?kr?t?kl?θ?kn?s/臨界厚度hccrystallattice/?kr?stl?l?t?s/晶格crystalseed/?kr?stlsi?d/籽晶crystal/?kr?stl/晶體cubicclassofcrystal/?kju?b?k/立方晶系晶體danglingbond/?d??ɡl??bɑ?nd/懸掛鍵合2

SemiconductorMaterials

27單詞/短語音標(biāo)中文含義dedicatedthin-filminsulator/?ded?ke?t?dθ?nf?lm??ns?le?t?r/專用薄膜絕緣體denudedzone/d??nu?d?dzo?n/剝蝕區(qū)diamondcrystallattice/?da??m?nd?kr?stl?l?t?s/金剛石晶格dielectricconstantk/?da???lektr?k?kɑ?nst?nt/

介電常數(shù)kdielectricstrength/?da???lektr?kstre?θ/

介電強(qiáng)度dielectric/?da???lektr?k/

電介質(zhì)electromigration/??lektro?ma??ɡre??(?)n/電遷移epitaxialdeposition/?ep??t?ksi?l?dep??z??n/外延沉積epitaxiallayer(epilayer)/?ep??t?ksi?l?le??r/外延層epitaxy/?ep??t?ksi/外延facecenteredcubic(f.c.c.)cell/fe?s?s?nt?rd?kju?b?k/面心立方晶胞2

SemiconductorMaterials

28單詞/短語音標(biāo)中文含義ferroelectricproperties/?fero???lektr?k?prɑ?p?rtiz/鐵電特性ferroelectric/?fero???lektr?k/鐵電體ferroicmaterial/'fero?km??t?ri?l/鐵電材料functionaloxide/?f??k??n(?)l?ɑ?ksa?d/功能氧化物gettering/?ɡet?r??/吸雜gradedlayer/?ɡre?d?d?le??r/漸變層grainboundaries/ɡre?n?ba?ndriz/晶界heterobonding/?het?ro??bɑ?nd??/異質(zhì)鍵合heteroepitaxy/?het?ro??ep??t?ksi/異質(zhì)外延hexagonalcrystal/hek?s?ɡ?nl?kr?st(?)l

/六方晶體homobonding/?ho?mo??bɑ?nd??/同質(zhì)鍵合2

SemiconductorMaterials

29單詞/短語音標(biāo)中文含義homoepitaxy/?ho?mo??ep??t?ksi/同質(zhì)外延inorganicsemiconductor/??n??r?ɡ?n?k?semik?nd?kt?r/無機(jī)半導(dǎo)體insulator/??ns?le?t?r/絕緣體inter-layerdielectric(ILD)/?n?t??rler?da???lektr?k/層間介質(zhì)(ILD)latticeconstant/?l?t?s?kɑ?nst?nt/晶格常數(shù)latticematching/?l?t?s?m?t???/晶格匹配latticemismatch/?l?t?s?m?s?m?t?/晶格失配latticemismatchedepitaxy/?l?t?s?m?s?m?t?

?ep??t?ksi/晶格失配外延long-rangestackingorder/?st?k??/長(zhǎng)程有序magneticsemiconductor/m?ɡ?net?k?semik?nd?kt?r/磁性半導(dǎo)體metalalloy/?metl??l??/金屬合金2

SemiconductorMaterials

30單詞/短語音標(biāo)中文含義metalsilicides/?met(?)l

?s?l??sa?d/金屬硅化物mobileion/?mo?bil?a??n?/可移動(dòng)離子MOS/CMOStransistor/tr?n?z?st?r/MOS/CMOS晶體管multi-purposethin-filminsulator/??ns?le?t?r/多用途薄膜絕緣體multicrystallinematerial/?m?lti?kr?st?la?n/多晶材料nanocrystallinequantumdot/?nɑno??kr?st?la?n?kwɑ?nt?mdɑ?t/納米晶量子點(diǎn)nanodot/?n?no?dɑ?t/納米點(diǎn)nanotube/?n?no?tu?b/納米管nanowire/?n?no??wa??r/納米線nativeoxide/?ne?t?v?ɑ?ksa?d

/天然氧化物near-surfaceregion/?ri?d??n/近表面區(qū)2

SemiconductorMaterials

31單詞/短語音標(biāo)中文含義non-metallicconductor/nɑ?n-m??t?l?kk?n?d?kt?r/非金屬導(dǎo)體organicmaterial/??r?ɡ?n?k

m??t?ri?l/有機(jī)材料organicsemiconductor/??r?ɡ?n?k?semik?nd?kt?r/有機(jī)半導(dǎo)體oxide/?ɑ?ksa?d/氧化物perovskitestructure/p??rɑ?vska?t?str?kt??r/鈣鈦礦結(jié)構(gòu)physicaldamage/?f?z?k(?)l?d?m?d?/物理損傷piezoelectric/pa??izo??lektr?k/壓電材料polycrystallinematerial/p?l??kr?st?la?n/多晶材料pseudomorphicfilm/?psju?d???m??f?k/贗晶膜quantumdot/?kwɑ?nt?mdɑ?t/量子點(diǎn)quantumwell/?kwɑ?nt?mwel/量子阱2

SemiconductorMaterials

32單詞/短語音標(biāo)中文含義radiationhardness/?re?di?e??(?)n?hɑ?rdn?s/輻射強(qiáng)度relaxedlattice/r??l?kst?l?t?s/弛豫晶格seededsublimation/?si?d?d?s?bl??me??n/籽晶升華semiconductor/?semik?nd?kt?r/半導(dǎo)體semiconductorperiodictable/?p?ri?ɑ?d?k/半導(dǎo)體周期表Semiconductor-on-Insulator/??ns?le?t?r/絕緣體上半導(dǎo)體single-crystal/?s??ɡ(?)l-?kr?st(?)l/單晶smallmolecule(monomer)/?mɑ?l?kju?l/(/?mɑ?n?m?r/)小分子(單體)solid-stateepitaxy/?ep??t?ksi/固態(tài)外延spintronic/sp?n?trɑ?n?k/自旋電子strainenergy/stre?n?en?rd?i/應(yīng)變能2

SemiconductorMaterials

33單詞/短語音標(biāo)中文含義strainedlayerheteroepitaxy/?het?ro??ep??t?ksi/應(yīng)變層異質(zhì)外延structuraltransition/?str?kt??r?ltr?n?z??(?)n/結(jié)構(gòu)轉(zhuǎn)型sub-surfaceregion/s?b-?s??rf?s?ri?d??n/亞表面區(qū)substrate/?s?bstre?t/襯底superlattice/sju?p??l?t?s/超晶格surface/?s??rf?s/表面surfacepassivation/p?s??ve???n/表面鈍化surfaceroughness/?r?fn?s/表面粗糙度surfacestate/ste?t/表面態(tài)surfacetermination/?t??rm??ne??(?)n/表面終止thermalconductivity/?θ??rm(?)l?kɑ?nd?k?t?v?ti/導(dǎo)熱系數(shù)2

SemiconductorMaterials

34單詞/短語音標(biāo)中文含義thin-film/θ?nf?lm/薄膜top-downprocess/?prɑ?ses/自上而下工藝transparentconductingmaterial/tr?ns?p?r?nt/透明導(dǎo)電材料tunneling/?t?n?l??/隧穿two-dimensionalelectrongas(2DEG)/da??men??n(?)l/二維電子氣unsaturatedbond/?n?s?t???re?t?dbɑ?nd/不飽和鍵合waferengineering/?we?f?r?end???n?r??/晶圓工程wide-bandgap/b?nd?ɡ?p/寬帶隙2

SemiconductorMaterials

1Introduction

Organicmaterialsareingeneralweekconductorsofelectricity.Someof

them,however,uponinjectionofchargecarriers(electronsorholes),orafter

beingproperlychemicallyengineered,takeoncharacteristicsofsemiconductorsbyallowingcontrolofchargedistributionusingexternalelectricfieldand

displayingabilitytoemitanddetectlight.Asaresult,thisclassoforganic

compoundsisbeingappropriatelyreferredtoasorganicsemiconductors./i?m?t/發(fā)射2

SemiconductorMaterials

2.5CrystalStructureofSolids/?spe???li/空間化學(xué)處理2

Thefollowingfactorsdistinguishorganic,or“plastic”,semiconductors

fromtheirinorganiccounterparts:(i)organicsemiconductorsmaintaintheir

fundamentalphysicalpropertiesevenifdrasticallybent,andthus,arecompatiblewithflexiblesubstrates,(ii)organicsemiconductorsareusedonly

asthethin-film,non-crystallinematerials,(iii)organicsemiconductorsare

transparenttovisiblelight,and(iv)organicsemiconductorsarelow-costmaterialswhichcanbeprocessedintofunctionaldevicesusingrelativelysimple

manufacturingtechnology.Thesecharacteristicsopenuppossibilityofformationoffunctionalsemi-transparentsemiconductordevicesandcircuitson

theflexiblesubstrates./??nd?r?la???/根本的2

SemiconductorMaterials

2.5CrystalStructureofSolids/?spe??l/空間的/?s?bstre?t/襯底/d??st??kt/不同的/tr?ns?p?r?nt/透明的Text/?semitr?ns?p?r?nt/半透明的/f??r?me??(?)n/形成3(a)Smallmoleculeorganicsemiconductorand(b)polymer

organicsemiconductors.2

SemiconductorMaterials

2.5CrystalStructureofSolids/?mɑ?l?kju?l

/分子/

?pɑ?l?m?r

/聚合物4Introduction

Atthecoreofsemiconductordeviceengineeringaresingle-crystalsemiconductors,andhence,themethodsusedtoformsingle-crystalsemiconductors

areofvitalinterestinsemiconductordevicetechnology.Thereasonisaverystrongcorrelationbetweenthequalityofthecrystalandperformanceofanydevicebasedoncrystallinesemiconductormaterial.Inthissection,methodsusedtogrowbulksingle-crystalsemiconductormaterialsarereviewed./?k??r??le??(?)n/關(guān)聯(lián)2

SemiconductorMaterials

2.6BulkSingle-CrystalFormation/b?lk/體/?va?t(?)l/至關(guān)重要的5Text

Byfarthemostcommoninthemanufactureofbulksingle-crystalsemiconductors(asopposedtothin-filmsingle-crystals)isthemethodofCzochralskicrystalgrowthreferredtoinshortasaCZmethod.丘克拉斯基（人名）2

SemiconductorMaterials

2.6BulkSingle-CrystalFormation2.6.1

CZsingle-crystalgrowth/??po?zd/有別于/?kru?s?b(?)l/坩堝SchematicrepresentationoftheCzochralski(CZ)single-crystalgrowth

process,(a)seedcrystalisimmersedintheliquidsilicon,(b)single-crystalsiliconis

pulledoutoftheliquid,and(c)the

resultoftheprocessintheformofsingle-silicon

ingot./??m??rst/使浸沒/???ɡ?t/錠6

TheCZmethodisbestexplainedusinggrowthofsingle-crystalsiliconasanexample.Inthistechniquenuggetsofultra-purepolycrystallineSiaremolteninthecruciblewithhighpurityquartzorsiliconcarbide

liner.Toestablishn-typeorp-typeconductivityanddesireddopinglevel,dopantsinpreciselycontrolledamountsareaddedtothemelt.Subsequently,properlyorientedwithrespecttothesurfaceofthemeltpieceofhigh-qualitysinglecrystalSi,referredtoascrystalseed,isimmersedinthemeltandthenslowlypulledoutofthemeltwithrotation./p?l??kr?st?la?n/多晶硅2

SemiconductorMaterials

2.6BulkSingle-CrystalFormation2.6.1

CZsingle-crystalgrowth/?n?ɡ?ts/塊/?la?n?r/內(nèi)襯/???rient?d/定向/ro??te??(?)n/旋轉(zhuǎn)/kw??rts/石英/?kɑ?ba?d/碳化物/?kru?s?b(?)l/坩堝/??m??rst/使浸沒7Text

Somewhatspecialintermsofsingle-crystalgrowthisthecaseofgalliumnitride,GaN.Thisindispensableintherangeofphotonicandhighpowerelectronicapplicationssemiconductorcannotbeobtainedinthebulksingle-crystalformusinganyofthemethodlistedabove.Toobtainbulksingle-crystalGaNintheshapeandsizecompatiblewiththedemandsofcommercialdevicemanufacturing,extrememeasuresintermsofpressureandtemperature,mustbetakentoformsingle-crystalGaN./??nd??spens?b(?)l/不可或缺的2

SemiconductorMaterials

2.6BulkSingle-CrystalFormation2.6.2

Alternativemethods/?ɡ?li?m/鎵13Introduction

Akeyelementinsemiconductorengineeringisamechanically

coherentpiece

ofthesolidwithwhichprocessofmakingdevicestartsandwhichisreferred

toasasubstrate.Mostcommonly,substratesusedtomanufacturesemiconductordevicesareshapedasrigid

circularslicesreferredtoaswafersmadeoutofsingle-crystalsemiconductormaterialobtained.Below,varioustypesofsubstratesusedinsemiconductordeviceengineeringareconsideredintermsofsemiconductorandnon-semiconductorsubstrates./ko??h?r?nt/連續(xù)的2

SemiconductorMaterials

2.7Substrates/m??k?n?kli/機(jī)械地/?r?d??d/剛性/?s??rkj?l?r/圓形的/?sla?s?z/片Text

Aspointedoutearlier,inthemajorityofbothelectronicandphotonicapplicationsterm“substrate”issynonymousinsemiconductorterminologywithacircular-shapedwaferofsingle-crystalsemiconductor.Dependingonmaterialandprocessneeds,single-crystalsemiconductorwafersvaryindiameterfromlessthan20mmto450mmwiththicknessvaryingfromlessthanabout0.1mmtoabout1.0mmdependingonthesizeofthewaferanditsuse.Ingeneral,withwafersgettinglargerindiameter,increasednumberofdevicescanbeformedonthewaferasaresultofwhichcostoftheelectronicfunctionsperformedbytheindividualdeviceformedonthewaferislower./da???m?t?r/直徑2

SemiconductorMaterials

2.7Substrates2.7.1Semiconductorsubstrates/s??nɑ?n?m?s/同義的/?t??rm??nɑ?l?d?i/術(shù)語/p?r?f??rmd/執(zhí)行/?s??rkj?l?r/圓形的14

Keyoperationsinvolvedintheconversionofsingle-crystalingots,orboules,intoproduction-readywafersareshowninFig.2

SemiconductorMaterials

2.7Substrates2.7.1Semiconductorsubstrates/k?n?v??r?(?)n/轉(zhuǎn)變/bu?lz/晶柱/?sla?s??/切片倒角/?l?p??/研磨Fromthesingle-crystalbulkingottothewafersusedtofabricatedevices.【Bulkwafers】15

Previousprocessesproducehigh-qualitybulkwafersmeetingrequirementsofthetypicalsemiconductordevicemanufacturingprocess.Inthehigh-enddevicemanufacturing,however,suchhomogenousSiwafers,commonlyreferredtoasbulkwafers,needtobeengineeredfurthertomeetspecificdevicerelatedrequirements.DirectionsinwhichwaferengineeringmayproceedareillustratedinFig.2

SemiconductorMaterials

2.7Substrates2.7.1Semiconductorsubstrates/?ha??end/高端的/h??mɑd??n?s/同質(zhì)的【Engineeredsiliconwafers】162

SemiconductorMaterials

2.7Substrates2.7.1Semiconductorsubstrates/d??nu?d?d/剝蝕的/?berid/埋氧層Illustrationofthewayshomogenous,single-crystalSiwafercanbeengineeredtomeettheneedsofvariousdeviceapplications.【Engineeredsiliconwafers】/h??mɑd??n?s/同質(zhì)的加工成17

Waferbondingisaprocesswhichpermanentlybonds(fuses)twowafersintoasingle,mechanicallycoherentsubstratewithoutusingadhesives.Thisversatiletechniqueallowsformationofsemiconductorsubstrateswhicharedifficulttoobtainusingothermethods.2

SemiconductorMaterials

2.7Substrates2.7.1Semiconductorsubstrates/?d?his?vz/黏合劑/?fju?z?z/

熔合【W(wǎng)aferbonding】/?v??rs?tl/多用途的18

Waferbondingprocess,(a)twowafersarepressedagainsteachotherattheelevatedtemperatureand(b)arepermanentlybonded,(c)topwaferisthinnedtothedesiredthickness.2

SemiconductorMaterials

2.7Substrates2.7.1Semiconductorsubstrates/?el?ve?t?d/高的【W(wǎng)aferbonding】/θ?nd/減薄19Text

Thissectiongivesabriefoverviewofinsulatorsusedassubstratesinsemiconductordeviceengineering.2

SemiconductorMaterials

2.7Substrates2.7.2Non-semiconductorsubstrates/??ns??le?t?rz/絕緣體【Sapphire】

Inthecaseelectronicand/orphotonicdevicesrequireaninsulatingsubstratefeaturingoutstandingopti