DryEtchProcessIntroduction介紹教學(xué)課件

乾蝕刻製程技術(shù)簡介DryEtchprocessintroductionP.1Contents1.IntroductionofPlasma2.ElectrodeandChamberDesign3.PlasmaEtchingandapplicationsinICFAB4.MiscellaneousP.21.IntroductiontoPlasmaA.WhatisPlasma?B.PlasmaGenerationC.DC&AC-ElectricFieldande-SourceD.DCDischargesE.ACDischargesP.3eeeeee1-A.PlasmaDefinition:Aplasmaisa“quasi-neutral”gasofchargedandneutralparticleswhichexhibits“collectivebehavior”(from“IntroductiontoPlasmaPhysics”byF.F.Chen,1974)P.4PowerInitiale-&ThermalionizationCosmicRayFieldEmissionFreee-,IonHighEnergye-,IonIon+e-[Recombination][Adsorption][Collision][Sputtering]e-andIonDensityReachesCriticalAmountPressureChamberconfigurationGasesPlasma1-B.PlasmaGenerationP.5FundamentalPlasmaReactions(1)Dissociation(解離反應(yīng))(2)Ionization(離子化)(3)Excitation(激發(fā))(4)Recombination(複合)(5)EmissionP.6DCplasma(ultrahighvoltage)ACplasma(Capacitive-Coupled)EE1-C.DCandACelectricfieldP.7e-source:1.Ionization2.Secondarye-DCplasmasecondarye-dominateACplasmaionizationdominate1-D.DCplasmaEPrimarye-Secondarye-GasIonizationPrimarye-+-P.8CathodeCAr+Ar+Ar+AreˉNegativeglowCathodesheathseˉeˉSecondaryelectronSecondaryelectroneˉeˉP.9V0VCVPVASheathVoltage,Vs=-(|Vp|+|Vc|)PlasmaPotentialP(,

,e-,atoms)CathodeAnodeACDarkSpaceGlowRegionVCDCDischargesP.10AdvantagesofDCGlowDischarge1.Ionmovementisgoodtoprofileshaping2.Simpleconfiguration1.Verylowiondensity(lowionizationefficiency)2.Requiresionbombardmenttoemitsecondaryefromelectrodes(electrodematerialconsumption)3.Requiresconductionmaterialforelectrode(Notsuitableforwaferprocessing)DisadvantagesofDCGlowDischargeP.111-E.ACplasma(capacitive-coupled)P.12P(,,e-,atoms)‘Cathode”,PowerElectrode“Anode”:couldbechamberwallMeanplasmapotentialwithoutCapacitorCapacitorVaVbV0VPVAMeanplasmapotentialwithCapacitorV1SelfDC-biasVDCV21-E.ACplasmaP.13IntroductionforcapacitorchargingVaVbVaVbV=5V=5IbtimeIbt=0t=0t=0

V=5Vb-Va=2V=7P.14Vb0+1-1-20Va+1-10Va+1-10+1-1-2VbVT

=TimeaveragepotentialofVbLightparticle---electronHeavyparticle---positiveionRFplasma(capacitive-coupled)P.15PrimaryAdvantagesofRFDischarges1.Thedischargecanbesustainedwithoutsecondaryelectronemission

Waferarepartedofelectrodeinmostoftime2.Probabilityofionizationisenhancedduetoelectronoscillations.

Higherplasmaintensity3.Operatingatlowerelectrodevoltages/electricfields.

Lowerfilmdamage4.AbletoworkwithdielectricmaterialsP.162.RFElectrodeandChamberDesignA.PEMode(PlasmaEtching)B.RIEMode(ReactiveIonEtching)C.MERIEMode(MagneticEnhancedReactiveIonEtching)D.HDPMode(HighDensityPlasma)-ElectronCyclotronResonance,Helicon,InductiveCoupledPlasmaE.

DownStream

Mode

(PEmode)F.

Mix

Mode-(Micro-Wave+RF,GaSonicsDL)P.17PEModeRIEModeMERIEModeICPModeRFRFRFRF1RF2MWAppliedMaterialsSuper-Ewith0gaussLamResearchTCP-9400SEchamberAppliedMaterialsSuper-EchamberNovellusGaSonicsTypeATypeBTypeCTypeDP.18DownstreamModeMWGasesGaSonicsL3510chamberRFMixedmodeGaSonicsDLchamberChemicalreactiononlyUsuallydoingwithhightemp(>200oC)TypeFP.19845Gaussfor2.45GHzpowersourceElectronicCyclotronResonanceTransformerCoupledPlasmaECRandTCPChamberdesignP.20ToolselectionforPlasmaEtcha.Processperformance(demowafers)b.Throughputc.FootPrintd.Supporte.Costf.Backupg.Technologylifeh.AutomationP.21FootPrintLam200mm Lam300mm130*95=12350 109*113=12371P.22200&300switchflexibilitytoolP.233.PlasmaEtchingApplicationsinICFAB1.EtchRate2.Uniformity3.Selectivity4.AspectRatio5.Micro-loadingEffect6.LoadingEffect7.Iso/AnisotropicEtch8.Nested/IsoCD9.Mechanisms10.Particle11.Power/Matching12.BacksideHelium13.PreventiveMaintenance14.Trench&StackP.24Whatisetching?光阻待蝕刻層(a)等向性蝕刻(Isotropic)(b)非等向性蝕刻(Anisotropic)蝕刻(ETCH)P.25PlasmaEtchingonPatternedWaferP.26Gas-SolidChemistryinPlasmaEtchingPolysilicon: -Cl2/O2/He -HBr/O2/HeSitrench: -Cl2/HBr/O2/He -NF3/Cl2/O2/HeAlCu/Ti/TiN -Cl2/BCl3/Ar -Cl2/BCl3/CHF3/N2/ArSiO2: -CF4/CHF3/O2/Ar -C4F8/CO/Ar -CHF3/CO/Ar -C5F8/C4F6…Si3N4: -CF4/CHF3/Ar -SF6/CF4/HBr/Ar -CHF3/CH2F2/O2/ArP.27光阻PHOTORESISTThickness2Thickness1SelectivityS=(thk1)/(thk2)P.28DdPRFilmSubstrateDdPRFilmSubstrateEndpointsignaloutPRFilmSubstrateDd’AfteroveretchOverEtchFilmthicknessandetchrateisnotuniformOveretch:removestheleftoverfilmSelectivityofetchedfilmandsubstrateRIEusesopticalendpointtoswitchfrommainetchtooveretchP.29FilmSubstrateSidewallresidueBeforeetchInsufficientoveretchFilm1Film2lineBFilm2lineAResiduefromfilm2SubstrateInsufficientOverEtchP.30Nested&IsoCriticalDimension(CD)SimilaritywordsofNested:Array,cell,denseSimilaritywordsofISO:Periphery,openP.31EtchingTerminologyLoadingeffectMicro-loadingeffectAspectratiodependentetchingRIElagProximityeffectEtchrateWaferareaEtch/depthAspectratioEtchingstopP.32Patterndensityv.sdepthCDv.sdepthArrayPeripheryArrayv.sPeripheryDwAspectRatio=D/WP.33LoadingEffects:MicroLoadingSmallerholehasaloweretchratethanthelargerholes 1.Etchantsaremoredifficulttopassthroughthesmallerhole 2.EtchbyproductsarehardertodiffuseoutLowerpressurecanminimizetheeffect.LongerMFP,easierforetchantsreachingthefilmandforetchbyproductstogetoutP.34ProfileTerminologyTaper:Undercut:Notching:Bowing:Micro-trenching:P.35SurfaceparticleSurfaceparticlePatternfailurePatternfailureParticleP.36FactortoaffectguitartonesTension,massPower&MatchingP.37HeliumBacksideHeliumcoolingP.38PreventiveMaintenanceReasonstoperformawetcleanPolymerdeposition (endpointquartzwindow,dome,wall,ESC,….)Partslifetime (ex.DTquartzring,whichismajorfactortoBSGresidueandprofiledeformed)Result:E/R,Profile,Endpointsignalintensity,defects……P.39AMATCenturaSuper_EChamberStructureI~RemoveGDPRemovechamberlinerRemovetop,insert,shadowRingRemovecathodelinerRemoveQuartzpipeOpenchamberP.40AMATCenturaSuper_EChamberStructureII~P.41Speciesdetection: