10表面與界面分析XPS

1、 快速進樣室 分析室X 光源 超高真空系統(tǒng) 能量分析器 計算機系統(tǒng) 離子源 6005004003002001000 結(jié)合能/eV 計數(shù)/ 任意單位 Al 2p Al 2s C 1s N 1s Ti 2p O 1s Ti(CN)X/Al 薄膜 ni i ii iiwt i Ac Ac c 1 288286284282280278 Surface 20 min 40 min 60 min 有機碳 285.0 eV 金屬碳化物 280.8 eV 結(jié)合能 / eV 計數(shù) / 任意單位 294292290288286284282 結(jié)合能 / eV 計數(shù) / 任意單位 石墨 碳納米管 C 60 284.7

2、5 284.6 x 10 x 5 x 5 240250260270280 俄歇動能/ eV Energy eV 計數(shù) / 任意單位 242.2 A B C D 240.0 245.8 A: C60 B: 碳納米管 C: 石墨 D: 金剛石 263.4 267.0 268.5 266.8 302520151050 結(jié)合能 / eV 計數(shù) / 任意單位 A B C A: C60 B: 碳納米管 C: 石墨 Au/Si3N4體系電遷移前后N 1s的ADXPS譜圖 294292290288286284282 C60 film Low density Ar+ beam 3 KeV, 30 min Hig

3、h density Ar + beam 3 KeV, 30 min Binding Energy eV Counts a.u. 284.3 284.7 Figure 1 x 5 2824201612840 Binding Energy eV Counts a.u. Figure 2 D C B A 9.6 eV 22.6 eV 234 240 246 252 258 264 270 276 282 A B C Kinetic Energy eV Counts a.u. Figure 3 265.5 267.4 296294292290288286284282 Binding Energy eV

4、 Counts a.u. Nanotube x 5 Spt. 30 min Spt. 210 min 284.75 284.6 Figure 6 3020100 Binding Energy eV Counts a.u. A B C B: Nanotube C: Spt. 30 min D: Spt. 210 min 9.6 eV 22.6 eV D A: Graphite Figure 8 240250260270280 A B C D Kinetic Energy eV Counts a.u. 266.3 267.9 Figure 8 242.2 eV 350345340335330 33

5、5.1 pure Pd 335.5 free Pd 336.4 PdO pure Pd Pd in TiO2 H2 reduction Pd in TiO2 Binding Energy (eV) Counts (a.u.) 325320315310 Kinetic Energy (eV) Counts (a.u.) PtTiO2 film PtTiO2 film H2 reduction 573K 1hour 314.7 pure Pt 810800790780770 B / eV sputtered 4 nm surface CoO Co3O4 779.7 eV LaCoO3 film E

6、 (A) 170165160 B / eV 167.3 eV 169.2 eV E surface sputtered 4 nm (B) Fig3. The XPS spectra of film catalyst poisoned at 500 for 1 h (A) Co 2p (B) S 2p 466464462460458456 Binding energy / eV Counts / a.u. 458.7 eV 457.0 PZT/Pt(140)/Si Spt.60 min PZT/Si sample Spt. 60 min Figure 1The Ti 2p spectra of

7、PZT layer in PZT/Si and PZT/Pt(140 nm)/Si film sample 288286284282280278 PZT/Si Surface PZT/Si 20 min PZT/Si 60 min Carbon 285.0 eV TiCx 280.8 eV Binding Energy / eV Counts / a.u. PZT/Pt(140)/Si sample, 20 min Figure 2The C 1s spectra of PZT layer in PZT/Si and PZT/Pt(140 nm)/Si film sample 1081061041021009896 PZT/Si Surface PZT/Si 20 min PZT/Si 60 min 103.2 eV SiO2 98.0 eV TiSix Binding Energy / eV Counts / a.u. x 5 PZT/Pt(140)/Si 20 min Figure 2The Si 2p spectra of PZT layer in PZT/Si and PZT/Pt(140 nm)/Si film sample 965 960 955 950 945 940 935 930 925 500oC 800oC Binding Energy