ZnO薄膜論文：氧化鋅基薄膜晶體管的磁控濺射法制備及其性能研究

1、ZnO薄膜論文：氧化鋅基薄膜晶體管的磁控濺射法制備及其性能研究【中文摘要】ZnO是一種新型的直接帶隙寬禁帶-族化合物半導體材料,室溫下的禁帶寬度為3.37 eV,其激子結(jié)合能高達60 meV,可以實現(xiàn)室溫下的高效激子復合發(fā)光,是一種理想的短波長發(fā)光器件材料。目前,以ZnO基薄膜為有源溝道層的薄膜晶體管,其遷移率比最常用的硅薄膜晶體管高一個數(shù)量級以上,而且對可見光的透明度大于80%,是最有希望的下一代薄膜晶體管。本實驗采用射頻磁控濺射法系統(tǒng)研究了不同制備參數(shù)對ZnO薄膜的影響,襯底溫度對鎵摻雜氧化鋅薄膜(GZO)的光電性能的影響,以及GZO薄膜作為有源層的ZnO基薄膜晶體管特性等方面進行了研究,

2、研究的主要內(nèi)容包括以下三個方面：(1)采用超高真空磁控濺射設備首先在不同襯底溫度、濺射功率、氧氬比、濺射氣壓條件下在玻璃襯底上沉積了ZnO薄膜,并利用X射線衍射儀,掃描電鏡,原子力顯微鏡,紫外-可見分光光度計,熒光分光光度儀對樣品進行了測量。找出制備結(jié)構(gòu)缺陷密度小,晶粒趨向性好的最佳生長工藝條件：襯底溫度650,濺射功率為120 W,氧氬比為40：20,濺射氣壓為2.5 Pa,在此條件下生長的ZnO薄膜結(jié)晶質(zhì)量高,c軸取向好,并且在可見光區(qū)具有較高透過率,可以制備薄膜晶體管。(2)采用超高真空磁控濺射設備在不同襯底溫度的玻璃襯底上沉積了摻鎵3%的ZnO薄膜,研究了襯底溫度對該薄膜的透過率和電學

3、特性的影響。制備薄膜在可見光的透過率達到了80%以上,其中高于650制備的摻鎵3%的ZnO薄膜透過率低于80%是由于襯底玻璃開始融化導致的,薄膜的導電性能隨著襯底溫度的升高而增強,主要是因為薄膜的結(jié)晶質(zhì)量提高引起的。(3)我們用Si襯底作為底電極,二氧化鈦和氧化鎵的交替多層膜作為絕緣層,摻鎵3%的ZnO薄膜作為有源層,制備了ZnO薄膜晶體管,探索器件的性能?！居⑽恼縕inc oxide (ZnO) is a novel-compoundsemiconductor with a wide band gap of 3.7 eV. ZnO is an ideal short wavelength

4、 optoelectronic devices due to its high binding energy of 60 meV and strong excitonic emission at roomtemperature. At present, transistor with ZnO thin film as an active channel layer is the most favorite transistor because of its high optical transmission (>85%) in visible range and high mobilit

5、y (orders of magnitude higher than common silicon thin film transistor).In this work, we studied the effects of experimental conditions on the properties of ZnO filmsdeposited on glass substrates by radio frequency (RF) magnetron sputtering. The effects of the growth temperature on Ga-doped ZnO film

6、s, and the temperature on transistor with ZnO thin film as an active channel layer were studied. The main contents are as follows:(1) ZnO thin films was deposited on glass substrates by radio frequency (RF) magnetron sputtering technique with different experimental conditions, such as:substratetempe

7、rature, RF power, gas ratio of Ar to O2 and pressure. The X-ray diffractometery, scanning electron microscopy, atomic force microscopy techniques were used to investigate the lowest defect density and grain fabulous. It was found that the film had high crystal quality and grain fabulous when thetemp

8、erature was 650, the power was 120 W, the ratio ofAr:02=40:20 and the pressure was 1 Pa. Whats more, the film had high transmission (>85%), which is a perfect property for film transistor.(2) The Ga doped ZnO (3%) thin films were deposited on glass substrates at different temperatures. The effect

9、s of temperature on the properties of the films were studied. The results showed that all the films had hightransmission (>85%), expect for the one deposited at 800, which may be caused by the melting of the glass, Meanwhile we found that, with the increase of the growth temperatureincreasing, th

10、e resistance of the film became lager.(3) The ZnO based transistors were prepared with Si as the bottom electrode, multilayer thin film of TiO2 and Ga2O3 was used as the gate dielectric, Ga doped ZnO as the active channel layer. The properties of the transistors were studied and discussed.【關(guān)鍵詞】ZnO薄膜

11、 磁控濺射 薄膜晶體管 透射率【英文關(guān)鍵詞】ZnO thin film magnetron sputteringtransistor transmission 【備注】索購全文在線加好友：139938848.同時提供論文寫作一對一指導和論文發(fā)表委托服務【目錄】氧化鋅基薄膜晶體管的磁控濺射法制備及其性能研究摘要2-38-15899-1010-1111積1212-13射13-14Abstract3引言6-8第一章 緒論1.1 ZnO的結(jié)構(gòu)和性能8-91.1.2 ZnO的電學性能8-91.2 ZnO的應用9-111.1.1 ZnO的晶體結(jié)構(gòu)1.1.3 ZnO的光學性能1.2.1 太陽能電池1.2.3

12、 氣敏器件1.2.5 紫外探測器1.3.1 脈沖激光沉1.2.2 ZnO發(fā)光器件101.2.4 壓敏器件111.3 ZnO薄膜的制備方法11-141.3.2 分子束外延121.3.3 溶膠-凝膠1.3.5 磁控濺第二章1.3.4 金屬有機化學氣相沉積131.4 本論文研究的主要內(nèi)容14-1515-26ZnO薄膜的制備與表征特點和原理15-16射頻磁控濺射的原理制備18-20182.1 磁控濺射法制備ZnO薄膜的2.1.2 2.3 樣品2.1.1 磁控濺射的原理15-16162.2 實驗設備16-182.3.1 基片清洗182.3.2 薄膜制備2.3.4 透明薄膜晶體管的制20-21212.4.

13、1 綠光的2.5 ZnO薄膜的表2.3.3 薄膜生長18-19備19-20發(fā)光機理212.4 ZnO薄膜的發(fā)光機理2.4.2 其他發(fā)光機理征21-262.5.1 X射線衍射(XRD)21-222.5.3 光致發(fā)光譜2.5.2 原子力顯微鏡(AFM)22-23(PL)23-24(UV-VIS)24-2626-4726-3026-272.5.4 紫外-可見分光光度計第三章 濺射參數(shù)對ZnO薄膜的影響3.1 襯底溫度對薄膜結(jié)構(gòu)和光學性能的影響3.1.1 襯底溫度對薄膜晶體特性的影響3.1.2 襯底溫度對薄膜表面形貌27-283.1.4 本節(jié)小結(jié)3.1.3 襯底溫度對薄膜透過率的影響28-303030

14、-373.2 濺射功率對薄膜結(jié)構(gòu)和光學性能的影響3.2.1 濺射功率對濺射速率的影響30-313.2.2 濺射功率對薄膜晶體特性的影響31-32膜表面形貌的影響影響33-3732-333.2.3 濺射功率對薄3.2.4 濺射功率對薄膜光學性能的3.3 氧氬比對磁控濺射3.2.5 本節(jié)小結(jié)37制備ZnO薄膜特性的影響37-41影響37-3838-3939-403.3.1 氧氬比對薄膜厚度的3.3.2 氧氬比對薄膜透過率的影響3.3.3 氧氬比對薄膜熒光光譜的影響3.3.4 本節(jié)小結(jié)40-4141-473.4 濺射氣壓對薄膜結(jié)構(gòu)和光學性能的影響響41-4242-4343-4444-463.4.1 濺射氣壓對薄膜厚度的影3.4.2 濺射氣壓對薄膜結(jié)晶性能的影響3.4.3 濺射氣壓對薄膜表面形貌的影響3.4.4 濺射氣壓對薄膜透過率的影響3.4.5 本節(jié)小結(jié)46-47第四章 襯底溫度對摻鎵ZnO和ZnO基薄膜晶體管的影響47-5