STM32使用FSMC控制NAND flash 例程

1、本文原創(chuàng)于觀海聽濤,原作者版權(quán)所有,轉(zhuǎn)載請注明出處。近幾天開發(fā)項目需要用到STM32驅(qū)動NAND FLASH,但由于開發(fā)板例程以及固件庫是用于小頁(512B,我要用到的FLASH為1G bit的大頁(2K,多走了兩天彎路。以下筆記將說明如何將默認固件庫修改為大頁模式以驅(qū)動大容量NAND,并作驅(qū)動。本文硬件:控制器:STM32F103ZET6,存儲器:HY27UF081G2A首先說一下NOR與NAND存儲器的區(qū)別,此類區(qū)別網(wǎng)上有很多,在此僅大致說明:1、Nor讀取速度比NAND稍快2、Nand寫入速度比Nor快很多3、NAND擦除速度(4ms遠快于Nor(5s4、Nor 帶有SRAM接口,有足夠

2、的地址引腳來尋址,可以很輕松的掛接到CPU地址和數(shù)據(jù)總線上,對CPU要求低5、NAND用八個(或十六個引腳串行讀取數(shù)據(jù),數(shù)據(jù)總線地址總線復(fù)用,通常需要CPU支持驅(qū)動,且較為復(fù)雜6、Nor主要占據(jù)1-16M容量市場,并且可以片內(nèi)執(zhí)行,適合代碼存儲7、NAND占據(jù)8-128M及以上市場,通常用來作數(shù)據(jù)存儲8、NAND便宜一些9、NAND壽命比Nor長10、NAND會產(chǎn)生壞塊,需要做壞塊處理和ECC更詳細區(qū)別請繼續(xù)百度,以上內(nèi)容部分摘自神舟三號開發(fā)板手冊下面是NAND的存儲結(jié)構(gòu):由此圖可看出NAND存儲結(jié)構(gòu)為立體式正如硬盤的盤片被分為磁道,每個磁道又分為若干扇區(qū),一塊nand flash也分為若干b

3、lock,每個block分為如干page。一般而言,block、page之間的關(guān)系隨著芯片的不同而不同。需要注意的是,對于flash的讀寫都是以一個page開始的,但是在讀寫之前必須進行flash 的擦寫,而擦寫則是以一個block為單位的。我們這次使用的HY27UF081G2A其PDF介紹:Memory Cell Array= (2K+64 Bytes x 64 Pages x 1,024 Blocks由此可見,該NAND每頁2K,共64頁,1024塊。其中:每頁中的2K為主容量Data Field, 64bit為額外容量Spare Field。Spare Field用于存貯檢驗碼和其他信息

4、用的,并不能存放實際的數(shù)據(jù)。由此可算出系統(tǒng)總?cè)萘繛?K*64*1024=134217728個byte,即1Gbit。NAND閃存顆粒硬件接口:由此圖可見,此顆粒為八位總線,地址數(shù)據(jù)復(fù)用,芯片為SOP48封裝。軟件驅(qū)動:(此部分寫的是偽碼,僅用于解釋含義,可用代碼參見附件主程序:1. #define BUFFER_SIZE 0x2000 /此部分定義緩沖區(qū)大小,即一次寫入的數(shù)據(jù)2. #define NAND_HY_MakerID 0xAD /NAND廠商號3. #define NAND_HY_DeviceID 0xF1 /NAND器件號4. /*配置與SRAM連接的FSMC BANK2 NAND

5、*/5. NAND_Init(;6. /*讀取Nand Flash ID并打印*/7. NAND_ReadID(&NAND_ID;復(fù)制代碼Tips:NAND器件的ID包含四部分:1st Manufacturer Code2nd Device Identifier3rd Internal chip number, cell Type, Number of Simultaneously Programmedpages.4th Page size, spare size, Block size, Organization1. if(NAND_ID.Maker_ID = NAND_HY_Mak

6、erID && (NAND_ID.Device_ID = NAND_HY_DeviceID /判斷器件符合2. 3. /*設(shè)置NAND FLASH的寫地址*/4. WriteReadAddr.Zone = 0x00;5. WriteReadAddr.Block = 0x00;6. WriteReadAddr.Page = 0x05;7. /*擦除待寫入數(shù)據(jù)的塊*/8. status = NAND_EraseBlock(WriteReadAddr; /寫入前必須擦出9. /*將寫Nand Flash的數(shù)據(jù)BUFFER填充為從0x25開始的連續(xù)遞增的一串數(shù)據(jù)*/10. Fill_B

7、uffer(TxBuffer, BUFFER_SIZE , 0x25; /填充數(shù)據(jù)以測試11. /*將數(shù)據(jù)寫入到Nand Flash中。WriteReadAddr:讀寫的起始地址*/12. status = NAND_WriteSmallPage(TxBuffer, WriteReadAddr, PageNumber; /主要寫入函數(shù),此部分默認為小頁需要修改13. /*從Nand Flash中讀回剛寫入的數(shù)據(jù)。 riteReadAddr:讀寫的起始地址*/14. status = NAND_ReadSmallPage (RxBuffer, WriteReadAddr, PageNumber;

8、 /讀取主要函數(shù),也需要修改15.16. /*判斷讀回的數(shù)據(jù)與寫入的數(shù)據(jù)是否一致*/17. for(j = 0; j < BUFFER_SIZE; j+18. 19. if(TxBufferj != RxBufferj20. 21. WriteReadStatus+;22. 23. 24.25. if (WriteReadStatus = 026. 27. printf("nr Nand Flash讀寫訪問成功"28. GPIO_ResetBits(GPIO_LED, DS2_PIN;29. 30. else31. 32. printf("nr Nand F

9、lash讀寫訪問失敗"33. printf("0x%x",WriteReadStatus;34.35. GPIO_ResetBits(GPIO_LED, DS3_PIN;36.37. 38. 39. else40. 41. printf("nr 沒有檢測到Nand Flash的ID"42. GPIO_ResetBits(GPIO_LED, DS4_PIN;43. 復(fù)制代碼fsmc_nand.c文件:1. void NAND_Init(void2. 3. GPIO_InitTypeDef GPIO_InitStructure;4. FSMC_NA

10、ND_PCCARDTimingInitTypeDef p;5. FSMC_NANDInitTypeDef FSMC_NANDInitStructure;6.7. /*FSMC總線使用的GPIO組時鐘使能*/8. RCC_APB2PeriphClockCmd(RCC_APB2Periph_GPIOD | RCC_APB2Periph_GPIOE |9. RCC_APB2Periph_GPIOF | RCC_APB2Periph_GPIOG, ENABLE;10.11. /*FSMC CLE, ALE, D0->D3, NOE, NWE and NCE2初始化,推挽復(fù)用輸出*/12. GPI

11、O_InitStructure.GPIO_Pin = GPIO_Pin_11 | GPIO_Pin_12 | GPIO_Pin_14 | GPIO_Pin_15 |13. GPIO_Pin_0 | GPIO_Pin_1 | GPIO_Pin_4 | GPIO_Pin_5 |14. GPIO_Pin_7;15. GPIO_InitStructure.GPIO_Speed = GPIO_Speed_50MHz;16. GPIO_InitStructure.GPIO_Mode = GPIO_Mode_AF_PP;17. GPIO_Init(GPIOD, &GPIO_InitStructure

12、;18. /*FSMC數(shù)據(jù)線FSMC_D4:7初始化,推挽復(fù)用輸出*/19. GPIO_InitStructure.GPIO_Pin = GPIO_Pin_7 | GPIO_Pin_8 | GPIO_Pin_9 | GPIO_Pin_10;20. GPIO_Init(GPIOE, &GPIO_InitStructure;21. /*FSMC NWAIT初始化,輸入上拉*/22. GPIO_InitStructure.GPIO_Pin = GPIO_Pin_6;23. GPIO_InitStructure.GPIO_Speed = GPIO_Speed_50MHz;24. GPIO_In

13、itStructure.GPIO_Mode = GPIO_Mode_IPU;25. GPIO_Init(GPIOD, &GPIO_InitStructure;26. /*FSMC INT2初始化,輸入上拉*/27. GPIO_InitStructure.GPIO_Pin = GPIO_Pin_6;28. GPIO_Init(GPIOG, &GPIO_InitStructure;29. /*-FSMC 總線存儲器參數(shù)配置-*/30. p.FSMC_SetupTime = 0x1; /建立時間31. p.FSMC_WaitSetupTime = 0x3; /等待時間32. p.FS

14、MC_HoldSetupTime = 0x2; /保持時間33. p.FSMC_HiZSetupTime = 0x1; /高阻建立時間34. FSMC_NANDInitStructure.FSMC_Bank = FSMC_Bank2_NAND; /使用FSMC BANK235. FSMC_NANDInitStructure.FSMC_Waitfeature = FSMC_Waitfeature_Enable; /使能FSMC的等待功能36. FSMC_NANDInitStructure.FSMC_MemoryDataWidth = FSMC_MemoryDataWidth_8b; /NAND

15、Flash的數(shù)據(jù)寬度為8位37. FSMC_NANDInitStructure.FSMC_ECC = FSMC_ECC_Enable; /使能ECC特性38. FSMC_NANDInitStructure.FSMC_ECCPageSize = FSMC_ECCPageSize_2048Bytes; /ECC頁大小204839. FSMC_NANDInitStructure.FSMC_TCLRSetupTime = 0x00;40. FSMC_NANDInitStructure.FSMC_TARSetupTime = 0x00;41. FSMC_NANDInitStructure.FSMC_Co

16、mmonSpaceTimingStruct = &p;42. FSMC_NANDInitStructure.FSMC_AttributeSpaceTimingStruct = &p;43. FSMC_NANDInit(&FSMC_NANDInitStructure;44. /*!使能FSMC BANK2 */45. FSMC_NANDCmd(FSMC_Bank2_NAND, ENABLE;46. 復(fù)制代碼1. void NAND_ReadID(NAND_IDTypeDef* NAND_ID2. 3. uint32_t data = 0;4. /*!< Send C

17、ommand to the command area */5. *(_IO uint8_t *(Bank_NAND_ADDR | CMD_AREA = 0x90;6. *(_IO uint8_t *(Bank_NAND_ADDR | ADDR_AREA = 0x00;7. /*!< Sequence to read ID from NAND flash */8. data = *(_IO uint32_t *(Bank_NAND_ADDR | DATA_AREA;9. NAND_ID->Maker_ID = ADDR_1st_CYCLE (data;/四個周期讀取四個ID10. N

18、AND_ID->Device_ID = ADDR_2nd_CYCLE (data;11. NAND_ID->Third_ID = ADDR_3rd_CYCLE (data;12. NAND_ID->Fourth_ID = ADDR_4th_CYCLE (data;13. 復(fù)制代碼1. uint32_t NAND_WriteSmallPage(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumPageToWrite2. /傳入?yún)?shù):寫入數(shù)據(jù),寫入初始地址,要寫幾頁3. uint32_t index = 0x00, numpa

19、gewritten = 0x00, addressstatus = NAND_VALID_ADDRESS;4. uint32_t status = NAND_READY, size = 0x00;5. while(NumPageToWrite != 0x00 && (addressstatus = NAND_VALID_ADDRESS && (status = NAND_READY6. 7. /*!< Page write command and address */8. *(_IO uint8_t *(Bank_NAND_ADDR | CMD_AREA

20、= NAND_CMD_AREA_A;9. *(_IO uint8_t *(Bank_NAND_ADDR | CMD_AREA = NAND_CMD_WRITE0;10. *(_IO uint8_t *(Bank_NAND_ADDR | ADDR_AREA = 0x00;11. *(_IO uint8_t *(Bank_NAND_ADDR | ADDR_AREA = 0x00;/添加此句12. *(_IO uint8_t *(Bank_NAND_ADDR | ADDR_AREA = ADDR_1st_CYCLE(ROW_ADDRESS;13. *(_IO uint8_t *(Bank_NAND_

21、ADDR | ADDR_AREA = ADDR_2nd_CYCLE(ROW_ADDRESS;14. / *(_IO uint8_t *(Bank_NAND_ADDR | ADDR_AREA = ADDR_3rd_CYCLE(ROW_ADDRESS;/原版有此句15. /*!< Calculate the size */16. size = NAND_PAGE_SIZE + (NAND_PAGE_SIZE * numpagewritten;/統(tǒng)計寫入數(shù)目17. /*!< Write data */18. for(; index < size; index+19. 20. *(_

22、IO uint8_t *(Bank_NAND_ADDR | DATA_AREA = pBufferindex;21. 22.23. *(_IO uint8_t *(Bank_NAND_ADDR | CMD_AREA = NAND_CMD_WRITE_TRUE1;24. /*!< Check status for successful operation */25. status = NAND_GetStatus(;26.27. if(status = NAND_READY28. 29. numpagewritten+;30. NumPageToWrite-;31. /*!< Calculate Next small page Address */32. addressstatus = NAND_AddressIncrement(&Address;33. 34. 35.36. return (status | addressstatus;37. 復(fù)制代碼讀取函數(shù)同理修改1. uint32_t NAND_EraseBlock(NAND_ADDRESS Address2. 3. *(_IO uint8_t *(Bank_NAND_ADDR | CMD_AREA = NAND_CMD_ERASE0;4. *(_IO