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Simulation
methods
for
PWIFor
different
issues,
different
methods
areapplied.Typical
Applications等離子體源離子注入Separation
by
plasma
implantation
of
oxygen--SPIMOXto
form
the
silicon-on-insulator
(SOI)
structure.材料表面改性等ytical
model,Sheath
evolutionSee
Liebermann’s
bookComparison
between
Numerical
andytical
ModelsPressure:
0.5
mTorr;
working
gas:
ArSeparation:25
cm.Initial:
ve,
vi
full-Maxwellian
distribution;Te=
5eV,
plasma
potential,
20V,x=
0.025
cm,
t=
2.0
×
10?11
s,
1.0×10?9
sN=
5.0×105
for
electrons
and
ions
each.Vapplied=
10
kVWaveform:
trapezoidal
witha
rise
time
of10
ns,
aduration
of3μsSimulation
methods
for
implanted
ions
in
solidEnergy
ions
range:
>
10
keV為了
材料改性(濃度分布)的結(jié)果,需要了解:PSII鞘層的特性(包括離子轟擊到表面的能量)離子在材料中的能量損失離子在材料中的傳輸(射程分布、濃度分布)材料的表面層的原子運(yùn)動(dòng)情況離子在固體中運(yùn)動(dòng)過(guò)程的計(jì)算機(jī)模擬模擬離子在固體中運(yùn)動(dòng)的方法有三種:數(shù)值求解Boltzmann方程,確定離子的濃度分布和射程等。Monte-Carlo(MC)模擬方法,它是建立在二體碰撞基礎(chǔ)之上的。分子動(dòng)力學(xué)(Molecular
Dynamics–MD)模擬方法。嚴(yán)格地求解
力學(xué)方程組,使用于低能碰撞過(guò)程。Magnetron
Sputtering
DepositionPlasma
Sputtering用于磁性隧道結(jié)的多靶濺射臺(tái)物理所Simulation
methodsSputtering
for
major
applications:
deposition
or
etchingDischarge
PlasmaEnergetic
ions
interaction
withed
atoms
sputtering
Sputtered
atoms
through
the
plasmaDepositionNumerical
methods
for
PlasmaFluid
modelsHybrid
modelsKinetic
modelsPIC
modelsDawson,Buneman,Hockney與Birdsall等學(xué)者于二十世紀(jì)五十年代中期起逐漸發(fā)展而來(lái)Deposition:
MC,
MDTransport
and
Deposition:
MCPIC
plus
direct
Monte
Carlo
approachPlasma,
neutral
gas,
and
surfacereactionsPlasma
Characteristics:
Fluid,
Hybrid,
PIC,
Solving
BoltzmannAt
low
pressure,
plasmas
do
not
follow
Maxwellian
distributionFas ectrons
tracked,
slow
electrons
and
ions,
fluid
modelErosion
profile
of
materials:
MC,
MD在幾個(gè)帕的氣壓范圍內(nèi),由于電子和離子并不滿足熱平衡分布,流體假設(shè)也會(huì)存在問(wèn)題。Sputtering:
MC
MD混合模型:電子分為兩組,快電子和慢電子??祀娮硬捎肕onte
Carlo方法被,慢電子和離子仍然以流體處理.通過(guò)對(duì)平面磁控濺射裝置進(jìn)行粒子模擬發(fā)現(xiàn)在鞘層區(qū)域電子滿足不是很好地滿足分布,而離子分布。Particle-in-cell/Monte
Carlo
collisions
treatment
of
an
Ar/O-2
magnetrondischarge
used
for
the
reactive
sputter
deposition
of
TiOx
fiThe
physical
processes
in
an
Ar/O-2
magnetron
discharge
used
for
the
reactivesputter
deposition
of
TiOx
thin
fi were
simulated
with
a
2d3v
particle-in-cell/Monte
Carlo
collisions
(PIC/MCC)
model.
The
plasma
species
taken
intoaccount
are
electrons,
Ar+
ions,
fast
Ar-f
atoms,
metastable
Ar-m*
atoms,
Ti+ions,
Ti
atoms,
O+
ions,
O-2(+)
ions,
O-
ions
and
O
atoms.
This
modelaccountsfor
plasma- interactions,
such
as
secondary
electron
emissionandsputtering,
and
the
effects
ofprocess
is
described
by
anpoisoning.
Furthermore,
the
depositionytical
surface
model.
The
influence
of
the
O-2/Argas
ratio
on
the
plasmapotential
and
on
the
species
densities
and
fluxes
isinvestigated.
Among
others,
it
is
shown
that
a
higher
O-2
pressure
causes
theregion
of
positive
plasma
potential
and
the
O-
density
to
be
more
spread,
and
thelatter
to
decrease.
On
the
other
hand,
the
deposition
rates
of
Ti
and
O
are
notmuch
affected
by
the
O-2/Ar
proportion.
Indeed,
the
predicted
stoichiometry
ofthe
deposited
TiOx
film
approaches
x
=
2
for
nearly
all
the
investigated
O-2/Arproportions.NEW
JPHYS.
11,
103010(2009)Sputter
deposition
of
MgxAlyOz
thin
fi inadual-magnetron
device:
a
multi-species
Monte
Carlo
modelA
multi-species
Monte
Carlo
(MC)
model,
combined
with
anytical
surface
model,
has
been
developed
in
order
to
investigatet eral
plasma
processes
occurring
during
the
sputter
depositionof
complex
oxide
fi in
a
dual-magnetron
sputter
deposition
system.The
important
plasma
species,
such
as
electrons,
Ar+
ions,
fast
Aratoms
and
sputtered
metal
atoms
(i.e.
Mg
and
Al
atoms)
are
describedwith
the
so-called
multi-species
MCmodel,
whereas
the
depositionofMgxAlyOz
fi is
treated
by
an ytical
surface
model.
With
thismodel,
we
are
able
to
describeall
important
plasma
species
aswell
asthe
deposition
process.
It
c so
be
used
to
predict
filmstoichiometries
of
complex
oxide
fi on
thesubstrate.M
Yusupov
etal
2012
New
J.
Phys.
14
073043Plasma-solid
interaction
in
fusion
devices邊緣等離子體和其周?chē)诘南嗷プ饔脤?duì)等離子體芯部產(chǎn)生重要的影邊響緣等離子體是熱絕緣層,同時(shí)控制雜質(zhì)進(jìn)入到等離子體芯部;壁受很強(qiáng)的熱負(fù)荷以及來(lái)自芯部粒子的轟擊,材料腐蝕及雜質(zhì)產(chǎn)生;氫的再循環(huán)過(guò)程的控制及對(duì)等離子體密度控制的影響;在熱和粒子作用下材料性能的穩(wěn)定及使用安全性/微觀結(jié)構(gòu)的變化中子輻照后材料活化及變性偏濾器主要功能有效地來(lái)自器壁的雜質(zhì),減少對(duì)中心等離子體的污染。排出來(lái)自中心等離子體的粒子流和熱流。以及核聚變反應(yīng)過(guò)程中所產(chǎn)生的氦灰。偏濾器偏濾器是構(gòu)成高溫等離子與材料直接接觸的過(guò)渡區(qū)域:一面是溫度高達(dá)天文數(shù)字(幾億度)的等離子體,另一方面是通常的固體材料。Divertor
Is
a
Key
Component
of
Modern
Magnetic
Confinement
Systems偏濾器是現(xiàn)代磁約束核聚變裝置中至關(guān)重要的組成部分大部分來(lái)自于中心等離子體的熱流粒子流通過(guò)邊界層,Scrape-Off
Layer(SOL),進(jìn)入偏濾器。等離子體轟擊導(dǎo)至偏濾器表面的損傷,熱負(fù)載,甚至破壞直接面對(duì)等離子體的部件。來(lái)自材料表面的中性粒子(原子,分子)以及雜質(zhì)反過(guò)來(lái)影響邊界以及中心等離子體的性能。此外,由等離子體與表面相互作用而產(chǎn)生的雜質(zhì)會(huì)與D,T
共同沉積(Redeposition)于等離子體輻照較弱的區(qū)域,導(dǎo)致核聚變反應(yīng)堆中氚的滯留(Tritium
Retention)問(wèn)題。偏濾器研究涉及到等離子體物理,原子物理以及表面物理等交叉領(lǐng)域SOLDivertorDivertor
Studies
Involve
Plasmas
Physics,
Atomic
Physics
and
Surface
PhysicsFeaturesFuture
operation
regime:ELMy
HmodeSteady
stateoperation:(Partial
deta
ent)Transient
events:(E ,Disruption)Normally,
less
than
300eV.However,the
heat
flux
is
huge.Energy
up
to 100MeVDeposit
power
up
toGW/m2Future
burning
plasmamachinesDeta
entASDEX
1983,
Stangeby,
book,
483Comparison
of
the
electron
temperatureand
pressure
profiles
‘upstream’
and
at
thedivertor
plate
for
three
valuesof
ne.(AlcatorC-Mod)calculatedmeasuredtt/
calculatedte
C(n
)2DOD
Degree
of
deta
entWhere
**
is
measured
flux
of
ions
tothe ,
measured
by
build-in
Langmuirprobes.JET
.
Measured
degree
of
deta ent,
DOD,
forthe
discharge
for
the
separatrix,
peak
andintegrated
ion
fluxes
for
both
the
inner
andtheouter
divertor,
versus
line-averaged
density.
Notethe
large
DOD
reached
at
the
inner
divertor,typical
of
total
divertor
deta
ent.JET.
Measured
and
extrapolated
ion
fluxes
to
theinner
and
outer
divertors
for
an
ohmic
densityramp.
The
same
quadratic
law
is
used
for
theseparatrix
ion
flux,
thepeak
ion
flux
to
thedivertor
and
theintegral
ion
flux
to
both
the
innerand
theouter
divertor.Features
of
Deta
entregions
does
decrease,
but
continues
toent
is low
temperatures,
Te
≈
a
feweVThe
detached
regime
where
nt
saturates
and
starts
to
fallDecrease
of
the
ion
saturation
current,
j+sat.Dα
radiation
from
theincrease
with
ne.A
further
feature
of
detaor
lessA
drop
of
plasma
pressure
along
the
SOL
is
another
key
characteristicof
divertor
deta
ent.A
change
in
the
ratio
of
certain
hydrogenic
emission
lines
from
thedivertor,
indicative
of
the
presence
of
volumebination.The
neutral
(D2)
pressure
in
regions
adjacent
to
the
divertor
leg
does
notdecrease
as
j+sat
falls,
but
continues
to
increase
just
as
the
Dα
emissiondoes.Deta
ent2143Z
Z
u
uc
L
n L
qA
useful
criterion
for
detaching,C
S
Pitcher
and
P
C
StangebyPlasma
Phys.
Control.
Fusion
39
(1997)
779–930(1)
increase
cZ
by
intentionally
addingLz:
Radiated
power
coefficientQu:‘upstream’
parallel
power
densityNu:
upstream
plasma
densityL:
connection
lengthimpurities;increase
LZ
by
using
impurities
withhigher
radiation
rates,
e.g.
using
neon
overcarbon;raise
the
upstream
density
nu;increase
the
connection
length
L;decrease
the
power
density
flowing
inthe
SOL
qu
by
increasing
the
mainplasmaradiation.MhD
InstabilityDestabilizing
forces
arise
basically
from:Current
gradientsPressure
gradients
+
adverse
MF
curvatureTwo
categories
of
the
resulting
instabilities:Ideal
modesResistive
modesBoth
instabilities
have
an
infinite
spectrum
of
posiible
modes,
each
beingcharacterized
byits
mode
numbers,
taking
a
form
expi(m-n),
m
andn
beingthe
poloidal
and
toroidal
mode
numbers.Scientific
WritingScientific
WritingInstabilities
relatedto
currentgradient:
曲模)Tearing
modes(
模)displacement
mode(位移模)Kink
instability at
low
beta(扭Instabilities
related
to
pressuregradient:Ballooning
modes
(氣球模)InternalKink
mode
(內(nèi) 模)displacement
mode
(
位移模)Disruptions(破裂)Scientific
WritingA
dramatic
event
inwhich
the
plasmaconfinement
issuddenly
destroyed.A
major
one:Damage
:
limit
therange
of
operation
incurrrentand
density;leads
to
large
mechanical
stressesand
to
intense
heat
loads復(fù)雜的非線性過(guò)程,磁流體不穩(wěn)定性或位移失控是起因,PWI是重要的后繼因素,等離子體的熱量和磁能迅速損失是
.破裂的四個(gè)階段預(yù)先兆階段(1
s)?:等離子體的小半徑收縮先兆階段(100
ms):熱收縮發(fā)展為電流通道收縮。Thermal
quench(1
ms):熱量很快損失Current
quench(10
ms):放電很快終止。Scientific
Writing破裂不穩(wěn)定的共同特征:環(huán)向電流的突然熄滅;環(huán)向電壓示波信號(hào)出現(xiàn)負(fù)尖峰,但總電流不變;破裂過(guò)程中,X射線強(qiáng)度有較大的突然下降。Physics
of
disruptionsT eral
pattern
of
the
behaviourcan
bedescribed:The evolution
of
anunstable
current
profile
leading
tothegrowthof
a
tearing
mode, the
m=2modebeing
particularlyimportant.The nonlinear
growth
of
this
tearing
mode.A
sudden
relaxation
of
the
equilibrium
in
which
the
current
profileis
flattened
and
there
is
a
dramatic
loss
of
confinement
with
acollapse
of
the
plasmatemperature.The
total
current
decays.Under
some
circumstances
the
increased
toroidal
electrc
fieldassociated
with
the
increasedplasma produces
runawayelectrons.
These
electrons
can
carry
a
large
current
which
sometimespersists
after
the
plasma
current
decay
phase.Both
the
loss
of
plasma
energy
andthe
current
decayinduce
currentsin
the
vacuum
vessel
which
canproduce
very
large
forces
on
the
vessel.Scientific
WritingEdge
localized
modes
(E
)An
MHD
instability
occurring
in
the
edgeof
H-mode
plasmas
intoroidal
magnetic
fusion
experiments,
is
described.H-modeis
a
regimeof
enhanced
confinement
intoroidalmagnetic
fusion
devicesE lead
to
a
fast
(
ms)
loss
of
energy
and
particlesfrom
the
plasma
edge.E degrade
the
global
particle
and
energy
confinement
time.The
reduction
caused
by
ELM
transport
ismu ore
severe
for
theparticle
confinement
than
for
energy
confinement
time.Individual
E decrease
the
plasma
energy
and
particlecontent
by
roughly
5–10%.Scientific
WritingH
radiationpanying
each
ELMScientific
WritingType
IIIEachburst
continuousType
ISingle,
largerELM-free
Lead
to
impurity
accumulationScientific
WritingTypes
of
EType
I
Eare
essentially
gian
Ms.Large
heat
loss
pulse
involved,
a
threat.w
<
10
%Well
above
L-H
threshold,
>=20%low
frequency,
1-100HzFrequencyincreases
with
heating
power,
distinct
featureType
II
E are
intermediate
category,
avoiding
heat
pulse
ofType
I
but
not
leading
to
a
severe
loss
of
general
confinement.Triangularity
=(c+d)/2a.Type
IIIE are
continuous’
grassy”
Eassociate
with
a
substantial
deterioration
ofconfinement.Just
above
the
L-H
threthold,<=20%,
frequency,
1-1
kHz,
w<
1-5
%,
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