供應(yīng)商-dmos產(chǎn)品介紹16年版

MainMOSFETStructureCRHJ’sMOSFETMOSFETProductCRHJ’sMOSFETMOSFETVDMOS:VDMOS:VericalDoubleDiffusedMetalOxide重要參擊穿電閾值電

ectrical導(dǎo)通電阻：Rds(on)-頻率比較低時，導(dǎo)通損耗比較重要，Ron比較關(guān)鍵雪崩耐柵極電荷：Qg-頻率比較高時，開關(guān)損耗比較重要，Qg/Qgd比較關(guān)鍵密勒電和d比較重要。通常用器件的或5導(dǎo)通電阻組

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低壓器件溝道電CapacitanceandCapacitanceCapacitanceisvotageQgisabetterparametertocharacterizeswitchinglossandspeed. MainMOSFETStructureCRHJ’sMOSFETMOSFETProductCRHJ’sMOSFETCRHJ

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SmartFET(curren N60-200VLVSuperjunctionⅡ

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CRHJMOSFETProductRing華晶N20V器件Ronsp比競爭者低

Rom2 Rom2 華晶器件的Ronsp國際知名IDM器件水平相當(dāng)且終端設(shè)計有明顯的優(yōu)勢

華晶600V超結(jié)器件和華晶器件特性和國知名IDM器件水平相SCRHJMOSFETProduct

單位面積Eas耐量對手

FOM(Qg*Ron)對

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