供應(yīng)商-itm產(chǎn)品線2016介紹poc introduction

ITMProtectionOnePKGIntroduction1.產(chǎn)品介紹_POC[1/2]Itisdesigned“MOSFET”and“ProtectionIC”asOnepackageStructureProtectionOneChip<TwoChip><OneChip>CHIP價格

DownPCB的成本Down

:PCB4層→

2層

&小

PCB

節(jié)省采購管理費用:管理2ITEM(IC&FET)→管理1ITEM(2in1IC)

節(jié)省SMDCOST及提高生產(chǎn)率

:減少6~9SolderPin

(2Chip→1Chip)

減少失敗率、QCCost,時間主要有點SectionImage封裝外觀尺寸過充電壓/放電過電流/內(nèi)阻（Typ)MainmodelApplicationTEP-5L2.0X6.0X0.8t4.300/1.9~5.0/514.225/3.1~5.7/364.275/3.0~5.7/414.375/2.8~5.7/384.425/3.9~7.9/304.425/3.2~6.2/38ELI501M24ADMP26AMP45AMP59AEMP71AD手機電子煙移動電源等TEP-6L2.0X5.0X0.8t4.375/7.2~19.3/114.375/5.0~10.4/204.430/3.12~4.49/334.425/6~15/124.475/5.64~8.08/164.425/7.03~9.49/16SP45AWSP62ABHP55ASP71ABHP68AHP71AFPAD手機移動電源快速充電電池等UTEP-6L2.5X3.4X0.65t4.275/0.8~2.0/384.225/0.5~1.0/704.425/0.7~2.2/34UP29AUP49AUP71AC小用量電池穿戴設(shè)備等UTEP-6LS2.5X3.4X0.65t4.375/4.0~8.2/244.375/3.4~7.1/244.425/5.4~12.3/15SS45AESS45AGSS71A手機穿戴設(shè)備PADSLP-6L2.0X4.0X0.6t4.425/5.4~12.3/15LP711手機為主

3.復(fù)合IC（2合1）封裝尺寸DualPOC

Concept■應(yīng)用ProtectionIC的2nd

IC

Concept-通常在應(yīng)用的

ProtectionIC以外

應(yīng)用了別的

Level2ndProtectionIC■Merit-比現(xiàn)有的

PTC

可以添加保護項目

(2次充、放電保護)-可以改善、調(diào)整保護電流

or電壓的精密度■Demerit-沒有對溫度的保護-上升自耗電■2ndIC動作說明-替代現(xiàn)有的

2ndProtection(PTC,Fuse)-1次保護IC不能保護（（SHORT)時，2ndIC可以動作保護-可以設(shè)定2次保護動作

(客戶可以設(shè)定參數(shù)）>充、放電過電流保護

>

過充、過放保護2.產(chǎn)品介紹_DualPOC[1/3]應(yīng)用DualPOCPCM現(xiàn)有的產(chǎn)品應(yīng)用DualPOC

■保護電路結(jié)構(gòu)POC+PTC+零部件■保護電路結(jié)構(gòu)

DualPOC+零部件排除（替代）PTC”DualPOC安裝零部件的領(lǐng)域安裝OnePackagePOCPTC安裝零部件的領(lǐng)域2.產(chǎn)品介紹_DualPOC[2/3]DualPOC主要優(yōu)點1st

保護ICvs.

2nd

保護IC放電過電流保護領(lǐng)域1st

保護ICvs.PTC放電過電流保護領(lǐng)域在2次保護零部件(IC)沒有不合理領(lǐng)域

有2次保護零部件的動作，存在不合理領(lǐng)域※2次比1次可能先保護（切斷）現(xiàn)有的

PTC應(yīng)用保護模塊

DualPOCvs.2.產(chǎn)品介紹_DualPOC[3/3]1次保護2次保護1次保護2次保護1次&2次保護重疊領(lǐng)域-7-PKGSize[POC]Year20161Q20154Q20152QSmallerpackages??4.2mmX2.2mmX0.58mm20163Q[STEP]DevelopedDeveloping20164Q[DTEP-7]:SinglePOC:DualPOCPKGsize[DTEP-10][DRSP-8L][RSP]4.8mmX2.05mmX0.7mm7.3mmX1.7mmX0.6mm9.3mmX2.05mmX0.7mm[LTEP]3.9mmX1.7mmX0.6mm7.7mmX2.55mmX0.6mm??-8-LowImpedance1CellPOCProtectionProductRoadmapYear20161Q20154Q20152QSmaller&LowImpedancepackages10m?Rss-onTyp10m?Rss-on@VGS=3.9V7~8m?5m?UnderRss-onTyp5m?※DTEP(DualPOC)1stMOSFET

StandardRSSON

[@TotalIR=RssonX2][NewPKG]5m?20163Q[STEP][LTEP]DevelopedDeveloping※Rss-on(Typ15m?)[DTEP-10]TotalIR(Typ30m?)※Rss-on(Max5m?)TotalIRMax10m?[DRSP]20164QRss-onMax5m?[NewPKG][RSP][DTEP-7]※Rss-on(Typ5~6m?)TotalIR(Typ10~12m?)[NewPKG]40℃????@IDET4=3.0A35℃30℃:SinglePOC:DualPOC-9-No.PackageOverChargeCurrentProtection※Customizing??IR[Rss-onTyp.]@VDD=3.9VTotalIRLessthan60℃flowingCurrentTemperatureoftheHeat1st

Protection2ndProtection1st

Protection2ndProtection1UTEP-6LSTyp5.5A-24mΩ-24mΩ4.1A54.7℃2TEP-6LTyp5.8A-20mΩ-20mΩ4.6A55.1℃3UTEP-6LSTyp7.6A-15mΩ-15mΩ5.0A5