02集成電路工藝和版圖設(shè)計參考

集成電路工藝和版圖設(shè)計

概述

JianFang

ICDesignCenter,UESTC8/6/20241JianFang微電子制造工藝8/6/20242JianFangIC常用術(shù)語園片：硅片芯片(Chip,Die)：6

、8：硅（園）片直徑：1

＝25.4mm6150mm;8200mm;12300mm;亞微米<1m的設(shè)計規(guī)范深亞微米<=0.5m的設(shè)計規(guī)范0.5m、0.35m－設(shè)計規(guī)范（最小特征尺寸）布線層數(shù)：金屬（摻雜多晶硅）連線的層數(shù)。集成度：每個芯片上集成的晶體管數(shù)8/6/20243JianFangIC工藝常用術(shù)語凈化級別：Class1,Class10,Class10,000每立方米空氣中含灰塵的個數(shù)去離子水氧化擴(kuò)散注入光刻…………….8/6/20244JianFang生產(chǎn)工廠簡介PSI8/6/20245JianFangFabTwowascompletedJanuary2,2019andisa"StateoftheArt"facility.This2,200squarefootfacilitywasconstructedusingallthelatestmaterialsandtechnologies.Inthissetofcleanroomswechangetheair390timesperhour,

ifyoudothemathwithULPAfiltrationthisisaClassOnefacility.WehavehadittestedanditdoesmeetClassOneparameters(withoutanypeopleworkinginit).Sincewearenotmakingmicroprocessorshereandwedon'twanttowear"spacesuits",werunitasaclass10fab.EventhoughitconsistentlyrunswellbelowClassTen.8/6/20246JianFangHereintheFabTwo

Photolithographyareaweseeoneofour200mm.35micronI-LineSteppers.thissteppercanimageandalignboth6&8inchwafers.8/6/20247JianFangAnotherviewofoneoftheFabTwoPhotolithographyareas.8/6/20248JianFangHereweseeatechnicianloading300mmwafersintotheSemiTool.Thewafersareina13waferTefloncassetteco-designedbyProcessSpecialtiesandSemiToolin2019.Againthesearetheworld'sfirst300mmwetprocesscassettes(thatcanbespinrinsedried).8/6/20249JianFangAswelookinthiswindowweseetheWorld'sFirsttrue300mmproductionfurnace.Ourdevelopmentanddesignofthistoolbeganin1992,itwasinstalledinDecemberof2019andbecamefullyoperationalinJanuaryof2019.8/6/202410JianFangHerewecanseetheloadingof300mmwafersontothePaddle.8/6/202411JianFangProcessSpecialtieshasdevelopedtheworld'sfirstproduction300mmNitridesystem!Webeganprocessing300mmLPCVDSiliconNitrideinMayof2019.8/6/202412JianFang2,500additionalsquarefeetof"StateoftheArt"ClassOneCleanroomiscurrentlyprocessingwafers!Withincreased300mm&200mmprocessingcapabilitiesincludingmorePVDMetalization,300mmWetprocessing/Cleaningcapabilitiesandfullwafer300mm.35umPhotolithography,allinaClassOneenviroment.8/6/202413JianFangCurrentlyourPS300AandPS300Bdiffusiontoolsarecapableofrunningboth200mm&300mmwafers.Wecanevenprocessthetwosizesinthesamefurnaceloadwithoutsufferinganyuniformityproblems!(ThermalOxideOnly)8/6/202414JianFangAccuracyinmetrologyisneveranissueatProcessSpecialties.Weusethemostadvancedroboticlaserellipsometersandothercalibratedtoolsforprecisionthinfilm,resistivity,CDandstepheightmeasurement.IncludingournewNanometrics8300fullwafer300mmthinfilmmeasurementandmappingtool.WealsouseoutsidelaboratoriesandourexcellentworkingrelationshipswithourMetrologytoolcustomers,foradditionalcorrelationandcalibration.8/6/202415JianFangOneoftwoSEMLabslocatedinourfacility.InthisoneweareusingafieldemissiontoolforeverythingfromlookingatphotoresistprofilesandmeasuringCD'stodoublecheckingmetaldepositionthicknesses.Atthehelm,anotheroneofourprocessengineersyoumayhavespokenwithMarkHinkle.8/6/202416JianFangHerewearelookingattheIncomingmaterialdispositionracks

8/6/202417JianFangAboveyouarelookingatacoupleofviewsofthefacilitiesonthewestsideofFabOne.Hereyoucanseeoneofour18.5Meg/OhmDIwatersystemsandoneoffour

10,000CFMairsystemsfeedingthisfab(leftpicture),aswellasoneofourwaste

airscrubberunits(rightpicture).Bothareinsidethebuildingforeasiermaintenance,longerlifeandbettercontrol.8/6/202418JianFang集成電路（IntegratedCircuit,IC）：半導(dǎo)體IC，膜IC，混合IC半導(dǎo)體IC：指用半導(dǎo)體工藝把電路中的有源器件、無源元件及互聯(lián)布線等以相互不可分離的狀態(tài)制作在半導(dǎo)體上，最后封裝在一個管殼內(nèi)，構(gòu)成一個完整的、具有特定功能的電路。半導(dǎo)體IC雙極ICMOSICBiCMOSPMOSICCMOSICNMOSIC8/6/202419JianFangMOSIC及工藝MOSFET—MetalOxideSemiconductorFieldEffectTransistor.—金屬氧化物半導(dǎo)體場效應(yīng)晶體管Si金屬氧化物（絕緣層、SiO2）半導(dǎo)體MOS(MIS)結(jié)構(gòu)8/6/202420JianFangP－襯底n+n+漏源柵柵氧化層氧化層溝道GDSVTVGSIDVDS>0反型層溝道源（Source）S漏（Drain）D柵（Gate）G柵氧化層厚度：50埃－1000埃（5nm－100nm）VT－閾值電壓電壓控制N溝MOS（NMOS）

P型襯底，受主雜質(zhì)；柵上加正電壓，表面吸引電子，反型，電子通道；漏加正電壓，電子從源區(qū)經(jīng)N溝道到達(dá)漏區(qū)，器件開通。8/6/202421JianFangN－襯底p+p+漏源柵柵氧化層場氧化層溝道P溝MOS（PMOS）GDSVTVGSID+-VDS<0

N型襯底，施主雜質(zhì)，電子導(dǎo)電；柵上加負(fù)電壓，表面吸引空穴，反型，空穴通道；漏加負(fù)電壓，空穴從源區(qū)經(jīng)P溝道到達(dá)漏區(qū)，器件開通。8/6/202422JianFangCMOS

CMOS：ComplementarySymmetryMetalOxideSemiconductor

互補(bǔ)對稱金屬氧化物半導(dǎo)體－特點(diǎn)：低功耗VSSVDDVoViCMOS倒相器PMOSNMOSI/OI/OVDDVSSCCCMOS傳輸門8/6/202423JianFangN-SiP+P+n+n+P-阱DDVoVGVSSSSVDDCMOS倒相器截面圖CMOS倒相器版圖8/6/202424JianFangpwellactivepolyN+implantP+implantomicontactmetalANMOSExample8/6/202425JianFangpwellPwellActivePolyN+implantP+implantOmicontactMetal8/6/202426JianFangN－typeSiSiO2光刻膠光MASKPwell8/6/202427JianFangN－typeSiSiO2光刻膠光刻膠MASKPwell8/6/202428JianFangN－typeSiSiO2光刻膠光刻膠SiO28/6/202429JianFangN－typeSiSiO2SiO2Pwell8/6/202430JianFangpwellactivePwellActivePolyN+implantP+implantOmicontactMetal8/6/202431JianFangN－typeSiSiO2PwellSiO2光刻膠MASKactiveMASKActiveSi3N48/6/202432JianFangN－typeSiSiO2PwellSiO2光刻膠光刻膠MASKactiveMASKActiveSi3N48/6/202433JianFangN－typeSiSiO2PwellSiO2光刻膠光刻膠Si3N48/6/202434JianFangN－typeSiSiO2PwellSiO2場氧場氧場氧PwellSi3N48/6/202435JianFangN－typeSiSiO2Pwell場氧場氧場氧Pwell8/6/202436JianFangN－typeSiSiO2PwellSiO2場氧場氧場氧Pwellpoly8/6/202437JianFangactivepwellpolyPwellActivePolyN+implantP+implantOmicontactMetal8/6/202438JianFangN－typeSiSiO2PwellSiO2MASKpoly場氧場氧場氧Pwellpoly光刻膠8/6/202439JianFangN－typeSiSiO2PwellSiO2MASKpoly場氧場氧場氧Pwell光刻膠poly8/6/202440JianFangN－typeSiSiO2PwellSiO2場氧場氧場氧Pwellpoly8/6/202441JianFangN－typeSiSiO2PwellSiO2場氧場氧場氧Pwellpoly8/6/202442JianFangactivepwellpolyN+implantPwellActivePolyN+implantP+implantOmicontactMetal8/6/202443JianFangN－typeSiSiO2PwellSiO2MASKN+場氧場氧場氧Pwellpoly光刻膠8/6/202444JianFangN－typeSiSiO2PwellSiO2場氧場氧場氧Pwell光刻膠polyN+implantS/D8/6/202445JianFangactivepwellpolyP+implantPwellActivePolyN+implantP+implantOmicontactMetal8/6/202446JianFangN－typeSiSiO2PwellSiO2MASKN+場氧場氧場氧Pwellpoly光刻膠光S/D8/6/202447JianFangN－typeSiSiO2PwellSiO2場氧場氧場氧PwellS/Dpoly光刻膠P+implantP+接觸8/6/202448JianFangN－typeSiSiO2PwellSiO2場氧場氧場氧PwellpolyS/DP+接觸8/6/202449JianFangactivepwellpolyP+implantN+implantomicontactPwellActivePolyN+implantP+implantOmicontactMetal8/6/202450JianFangN－typeSiSiO2PwellSiO2MASKOmicontact場氧場氧場氧PwellpolyS/DP+接觸8/6/202451JianFangactivepwellpolyN+implantomicontactmetalPwellActivePolyN+implantP+implantOmicontactMetal8/6/202452JianFangN－typeSiSiO2PwellSiO2MASKmetal場氧場氧場氧PwellpolyS/DP+接觸metalmetalmetal8/6/202453JianFangpwellactivepolyN+implantP+implantomicontactmetal8/6/202454JianFang雙極型IC及工藝NPN基極集電極發(fā)射極PNP基極集電極發(fā)射極CBEIBICIECBEIBICIENPN晶體管PNP晶體管8/6/202455JianFangVCEiCiBVCE(sat)iR雙極型晶體管輸出特性放大區(qū)飽和區(qū)電流放大能力；電流驅(qū)動；8/6/202456JianFang基極發(fā)射極N+N-PN+集電極基極發(fā)射極P+NNPEBBCCN＋CCBBEPP＋P＋PN＋N8/6/202457JianFang

BiCMOS:雙極(Bipolar)與CMOS相容技術(shù)。

BiCMOS可以將雙極器件與CMOS器件制作在同一芯片上，使之具有雙極電路的高速度、高驅(qū)動能力、高模擬精度，又具有CMOS電路的低功耗、高集成度等特性。

BiCMOS工藝較之CMOS工藝和雙極工藝都復(fù)雜，制作周期長，產(chǎn)品成品率比CMOS低，成本比CMOS高。高性能雙極工藝與CMOS的VLSI工藝80％的工藝是相同的，在CMOS生產(chǎn)線上，只要改動或增添一部分工序，增添一部分設(shè)備，就可以制作BiCMOS芯片。BiCMOS8/6/202458JianFang版圖設(shè)計（layout）及相關(guān)技術(shù)8/6/202459JianFangCelldevelopment(Analog/digital)

AnalogdesignSchematicentry(transistorsymbols)Analogsimulation(SPICEmodels)Layout(layerdefinitions)DesignRuleChecking,DRC(designrules)Extraction(extractionrulesandparameters)ElectricalRuleChecking,ERC(ERCrules)LayoutVersusSchematic,LVS(LVSrules)8/6/202460JianFangLayoutDrawinggeometricalshapes: Defineslayouthierarchy

DefineslayermasksRequiresdetailedknowledgeaboutCMOStechnologyRequiresdetailedknowledgeaboutdesignrules(hundredsofrules)RequiresdetailedknowledgeaboutcircuitdesignSlowandtediousOptimumperformancecanbeobtained8/6/202461JianFang圖形層的定義N+implantmetalpwellactivePoly定義若干圖層,每層對應(yīng)一張掩膜版pwellactivepolyN+implantP+implantomicontactmetal8/6/202462JianFangLibALibBLibCCell1Cell2Cell3Tech

inst1inst2Inst3版圖庫的組織一個庫對應(yīng)一個特定的工藝針對該工藝的設(shè)計規(guī)則,和環(huán)境設(shè)定放在Tech文件中.

一個庫可以包含若干不同層次的Cell.8/6/202463JianFang版圖數(shù)據(jù)交換文件

GDSII格式

CIF格式

EDIF格式基本圖形基本操作8/6/202464JianFangDRCDesignRuleCheckChecksgeometricalshapes: width,length,spacing,overlap,etc.

1.單層規(guī)則該規(guī)則包括各層的最小寬度a及同層間距b

層名稱寬度a間距b層名稱寬度a間距bn+保護(hù)環(huán)510p+注入?yún)^(qū)105有源區(qū)1010多晶硅布線88p+保護(hù)環(huán)510多晶硅柵68歐姆孔814布線鋁條1010p阱11014電源、地線鋁條2510n+注入?yún)^(qū)105p+墻58/6/202465JianFang

CMOS電路規(guī)則2.層間規(guī)則（包括各層間的間距、包圍、迭搭的大?。?/6/202466JianFang說明標(biāo)號尺寸（um）有源區(qū)包圍歐姆孔a4金屬（鋁）包圍歐姆孔b3多晶硅包圍歐姆孔c4n+、p+注入?yún)^(qū)包圍有源區(qū)d5n+、p+保護(hù)環(huán)~有源區(qū)e10n+、p+保護(hù)環(huán)寬度f5nmos、pmos多晶硅柵寬度g6多晶硅柵伸出有源區(qū)h12多晶硅柵與n+、p+保護(hù)環(huán)迭搭i2多晶硅柵~鋁布線j1p阱包圍p+保護(hù)環(huán)k2…………..8/6/202467JianFangDRC文件例子(片斷) (drcmetal (width<1.00) ) (drcmetal (sep<0.80) ) (drcmetalomicont (enc<0.30) ) (drcpolyomicont (enc<0.40) )

8/6/202468JianFangEXTRACT用圖層間的相對關(guān)系判定器件及相互連接關(guān)系.例如:Poly跨過Active,即同時出現(xiàn)Poly和Active表明有一個MOS器件.

Extractselectricalcircuit:

transistors,connections,capacitance,resistanceINOutVddGnd8/6/202469JianFangEXTRACT文件例子(片斷)(extractDevicengate(poly"G")(nsd"S""D")(pwell1"B")"nmos4symbolanalogLib")(extractDevicepgate(poly"G")(psd"S""D")(sub"B")"pmos4symbolanalogLib")

pgateWidth=measureParameter(length(pgatecoincidentpoly)0.5) pgateLength=measureParameter(length(pgateinsidepoly)0.5) saveParameter(pgateWidth"W") saveParameter(pgateLength"L")

ngateWidth=measureParameter(length(ngatecoincidentpoly)0.5) ngateLength=measureParameter(length(ngateinsidepoly)0.5) saveParameter(ngateWidth"W") saveParameter(ngateLength"L")8/6/202470JianFangLVS10101010101040EXTLVSLayoutversusschematic

transistors:

parallelorserialCompareselectricalcircuits:

(schematicandextractedlayout)8/6/202471JianFangERCElectricalrulecheckCheckselectricalcircuit:unconnectedinputs

shortedoutputs

correctpowerandgroundconnection8/6/202472JianFangDigitaldesignBehavioralsimulation………………..Simulation/timingverificationwithestimatedback-annotationPlaceandroute(placeandrouterules)DesignRuleCheck,DRC(DRCrules)Loadingextraction(rulesandparameters)Simulation/timingverificationwithrealback-annotationDesignexport………..8/6/202473JianFangPlaceandRouteGeneratesfinalchipfromgatelevelnetlistGoals: Minimumchipsize

Maximumchipspeed.Placement:PlacingallgatestominimizedistancebetweenconnectedgatesFloorplanningtoolusingdesignhierarchySpecializedalgorithms(mincut,simulatedannealing,etc.)TimingdrivenManualinterventionVerycomputeintensiveHierarchybasedfloorplanningSimulatedannealingHightemperature:movegatesrandomlyLowtemperature:MovegateslocallyMincutKeepcuttingdesigninto