GB/T 44515-2024微機(jī)電系統(tǒng)(MEMS)技術(shù)MEMS壓電薄膜機(jī)電轉(zhuǎn)換特性測(cè)量方法

ICS31.080.99

CCSL59

中華人民共和國(guó)國(guó)家標(biāo)準(zhǔn)

GB/T44515—2024/IEC62047?30:2017

微機(jī)電系統(tǒng)（MEMS）技術(shù)

MEMS壓電薄膜機(jī)電轉(zhuǎn)換特性測(cè)量方法

Micro?electromechanicalsystem（MEMS）technology—Measurementmethodsof

electro?mechanicalconversioncharacteristicsofMEMSpiezoelectricthinfilm

（IEC62047?30：2017，Semiconductor—Micro-electromechanicaldevices—

Part30：Measurementmethodsofelectro?mechanicalconversion

characteristicsofMEMSpiezoelectricthinfilm，IDT）

2024?09?29發(fā)布2025?01?01實(shí)施

國(guó)家市場(chǎng)監(jiān)督管理總局

國(guó)家標(biāo)準(zhǔn)化管理委員會(huì)發(fā)布

GB/T44515—2024/IEC62047?30:2017

目次

前言··························································································································Ⅲ

1范圍·······················································································································1

2規(guī)范性引用文件········································································································1

3術(shù)語和定義··············································································································1

4MEMS壓電薄膜試驗(yàn)臺(tái)······························································································1

4.1總則·················································································································1

4.2功能模塊和組件··································································································3

5被測(cè)薄膜·················································································································4

5.1通則·················································································································4

5.2測(cè)量原理···········································································································4

5.3正橫向壓電系數(shù)的測(cè)量流程···················································································4

5.4逆橫向壓電系數(shù)的測(cè)量流程···················································································4

6測(cè)試報(bào)告·················································································································5

附錄A（資料性）MEMS壓電薄膜測(cè)量方法的示例·····························································7

A.1概述·················································································································7

A.2樣品制備流程·····································································································7

A.3測(cè)量流程···········································································································7

A.4測(cè)試報(bào)告·········································································································10

A.5中性面的方程···································································································12

參考文獻(xiàn)····················································································································13

Ⅰ

GB/T44515—2024/IEC62047?30:2017

前言

本文件按照GB/T1.1—2020《標(biāo)準(zhǔn)化工作導(dǎo)則第1部分：標(biāo)準(zhǔn)化文件的結(jié)構(gòu)和起草規(guī)則》的規(guī)

定起草。

本文件等同采用IEC62047?30：2017《半導(dǎo)體器件微機(jī)電器件第30部分：MEMS壓電薄膜機(jī)

電轉(zhuǎn)換特性測(cè)量方法》。

本文件做了下列最小限度的編輯性改動(dòng)。

——為與現(xiàn)有標(biāo)準(zhǔn)協(xié)調(diào)，將標(biāo)準(zhǔn)名稱改為《微機(jī)電系統(tǒng)（MEMS）技術(shù)MEMS壓電薄膜機(jī)電轉(zhuǎn)換

特性測(cè)量方法》。

——增加了3.2和3.3的注釋。

——對(duì)圖1進(jìn)行了進(jìn)一步標(biāo)注，使得表1的描述與圖1相對(duì)應(yīng)。依據(jù)中文行文中圖與表述位置接

近的原則，將圖1的解釋說明“MEMS壓電薄膜橫向壓電系數(shù)試驗(yàn)臺(tái)的功能模塊或組件的基

本構(gòu)成見圖1”調(diào)整至圖1出現(xiàn)的位置前后，即4.1處。

6a)11c(min)c()c(max)c()

——更正了第章）中“e31,f”，改為“e31,fVin,min”，更正“e31,f”為“e31,fVin,max”。

6b)3ed31fdec31fminc()ec31

——更正了第章）中“，”，改為“e31,f”，更正“，（）”為“e31,fVin,min”，更正“，

fmaxc()

（）”為“e31,fVin,max”。

6b)4ec31f0c()

——更正了第章）中“，（）”，改為“e31,fVin,0”。

A.3.2c()c()10.0N/Vm15.0N/Vm

——更正了中“e31,fVin,0和e31,fVin,max可分別確定為和”，改為

|c()|c()|10.6N/Vm15.0N/Vm

“e31,fVin,0和|e31,fVin,max可分別確定為和”。

A.3d

——更正了表正橫向壓電系數(shù)計(jì)算結(jié)果“e31,f”，改為負(fù)值。

A.611c(min)c()c(max)c()

——更正了表第項(xiàng)中“e31,f”，改為“e31,fVin,min”，更正“e31,f”為“e31,fVin,max”。

請(qǐng)注意本文件的某些內(nèi)容可能涉及專利。本文件的發(fā)布機(jī)構(gòu)不承擔(dān)識(shí)別專利的責(zé)任。

本文件由全國(guó)微機(jī)電技術(shù)標(biāo)準(zhǔn)化技術(shù)委員會(huì)（SAC/TC336）提出并歸口。

本文件起草單位：北京自動(dòng)化控制設(shè)備研究所、安徽奧飛聲學(xué)科技有限公司、芯聯(lián)集成電路制造股

份有限公司、中機(jī)生產(chǎn)力促進(jìn)中心有限公司、蘇州大學(xué)、無錫華潤(rùn)上華科技有限公司、太原航空儀表有

限公司、中國(guó)航天科工飛航技術(shù)研究院、山東中康國(guó)創(chuàng)先進(jìn)印染技術(shù)研究院有限公司、深圳市美思先

端電子有限公司、北京遙測(cè)技術(shù)研究所、西安交通大學(xué)、北京晨晶電子有限公司、上海新微技術(shù)研發(fā)中

心有限公司、天津新智感知科技有限公司、上海芯物科技有限公司、天津大學(xué)、北京大學(xué)、河北初光汽車

部件有限公司、共達(dá)電聲股份有限公司、河南芯睿電子科技有限公司、廣東潤(rùn)宇傳感器股份有限公司、

華景傳感科技（無錫）有限公司。

本文件主要起草人：王永勝、張紅宇、安志武、李根梓、張菁華、孫立寧、蘇翼、張新偉、李拉兔、

劉會(huì)聰、邢文忠、徐堃、毛志平、路文一、單偉中、許克宇、王志廣、湯一、要彥清、婁亮、鄭冬琛、陳得民、

姚鵬、胡曉東、盧弈鵬、袁長(zhǎng)作、仲勝利、侯杰、陳福操、李樹成、王志宏。

Ⅲ

GB/T44515—2024/IEC62047?30:2017

微機(jī)電系統(tǒng)（MEMS）技術(shù)

MEMS壓電薄膜機(jī)電轉(zhuǎn)換特性測(cè)量方法

1范圍

本文件描述了用于壓電式微傳感器和微執(zhí)行器等器件的壓電薄膜機(jī)電轉(zhuǎn)換特性測(cè)量方法。

本文件適用于