完整word版,半導(dǎo)體專業(yè)實(shí)驗(yàn)補(bǔ)充silvaco器件仿真..

1、實(shí)驗(yàn)2 PN結(jié)二極管特性仿真1、實(shí)驗(yàn)內(nèi)容（1）PN結(jié)穿通二極管正向I-V特性、反向擊穿特性、反向恢復(fù)特性等仿真。（2） 結(jié)構(gòu)和參數(shù)：PN結(jié)穿通二極管的結(jié)構(gòu)如圖1所示，兩端高摻雜，n-為耐壓層，低摻雜， 具體參數(shù)：器件寬度4ym,器件長度20 m,耐壓層厚度16 m, p+區(qū)厚度2 jim, n+區(qū)厚度2叩。 摻雜濃度：p+區(qū)濃度為1X1019cm-3, n+區(qū)濃度為1X1019cm-3，耐壓層參考濃度為5X1015 cm-3。+Pnn0W圖1普通耐壓層功率二極管結(jié)構(gòu)2、實(shí)驗(yàn)要求(1) 掌握器件工藝仿真和電氣性能仿真程序的設(shè)計(jì)(2) 掌握普通耐壓層擊穿電壓與耐壓層厚度、濃度的關(guān)系。3、實(shí)驗(yàn)過程#

2、啟動(dòng) Athenago athe na#器件結(jié)構(gòu)網(wǎng)格劃分；line x loc=0.0 sp ac= 0.4line x loc=4.0 sp ac= 0.4line y loc=0.0 sp ac=0.5line y loc=2.0 sp ac=0.1line y loc=10 sp ac=0.5line y loc=18 sp ac=0.1line y loc=20 sp ac=0.5#初始化Si襯底；init silic on c.p hos=5e15 orie ntati on=100 two.d#沉積鋁；depo sit alum thick=1.1 div=10#電極設(shè)置elect

3、rode n ame=a node x=1electrode n ame=cathode backside#輸出結(jié)構(gòu)圖structure outf=cb0.str tonyplot cb0.str #啟動(dòng)Atlas go atlas#結(jié)構(gòu)描述doping P .t ype conc=1e20 x.min=0.0 x.max=4.0 y.min=0y.max=2.0 uniformdoping n.t ype conc=1e20 x.min=0.0 x.max=4.0 y.min=18y.max=20.0 uniform#選擇模型和參數(shù)models cvt srh printmethod car

4、riers=2imp act selb#選擇求解數(shù)值方法method n ewt on#求解solve in itlog outf=cb02.logsolve vano de=0.03solve vano de=0.1 vste p=0.1 vfin al=5 n ame=a node#畫出IV特性曲線tonyplot cb02.log#退出quit圖2為普通耐壓層功率二極管的仿真結(jié)構(gòu)。正向I-V特性曲線如圖3所示，導(dǎo)通電壓接近 0.8V。圖2普通耐壓層功率二極管的仿真結(jié)構(gòu)1K見LAS圖3普通耐壓層功率二極管的正向I-V特性曲線運(yùn)用雪崩擊穿的碰撞電離模型，加反向偏壓，剛開始步長小一點(diǎn)，然后逐漸

5、加大步長。solve vano de=-0.1 vste p=-0.1 vfin al=-5 n ame=a node solve vano de=-5.5 vste p=-0.5 vfin al=-20 n ame=a noden ame=a nodesolve vano de=-22 vste p=-2 vfin al=-40 n ame=a node solve vano de=-45 vste p=-5 vfin al=-240求解二極管反向IV特性，圖4為該二極管的反向I-V特性曲線。擊穿時(shí)的縱向電場分布如圖所示，最大電場在結(jié)界面處，約為2.5 105V無m-1，在耐壓層中線性減小到

6、80000 V?cm-1。-F g1Insulator CrnAIGaN 1 x IIO / cm0.02 pm1x10叫 cm 0.04 gmVd0.05 urnn-GaN 1 x 110 / cm 0J8 pm圖3場板結(jié)構(gòu)的大功率 GaN HEMT(2) 要求(a)掌握定義一個(gè)完整半導(dǎo)體器件結(jié)構(gòu)的步驟，并能對其電性能進(jìn)行仿真研究。( b )理解場板技術(shù)對器件擊穿電壓提高的作用原理并能結(jié)合仿真結(jié)果給出初步分析。( 3 )實(shí)驗(yàn)過程#啟動(dòng) internal ，定義結(jié)構(gòu)參數(shù)#場板長度從1um增大到2.25um，步長為0.25um,通過改變I取值來改變場板長度 set l= 1.0# drain-g

7、ate distanceset Ldg=5.1# fieId pIate thicknessset t=1.77355# AIGaN composition fractionset xc=0.295# set trap lifetime set lt=1e-7 set light=1e-5# mesh locations based on field plate geometry set xl=0.9 + $lset xd=0.9 + $Ldgset y1= 0.3 + $tset y2= $y1 + 0.02set y3= $y2 + 0.04set y4= $y2 + 0.18# 啟動(dòng)二維

8、器件仿真器 go atlasmesh width=1000# 網(wǎng)格結(jié)構(gòu)I=0.0s=0.1I=0.05 s=0.05I=0.5s=0.05I=0.9s=0.025I=(0.9+$xI)/2s=0.05I=$xIs=0.025I=($xI+$xd)/2s=0.25I=$xd-0.05s=0.05I=$xds=0.05I=0.0s=0.1000I=0.3s=0.1000I=$y1s=0.0020x.mx.mx.mx.mx.mx.mx.mx.mx.m#y.my.my.ms=0.0020s=0.0100s=0.0500y.m l=$y2y.m l=$y3y.m l=$y4# device struct

9、ure# POLAR.SCALE is chosen to match calibrated values# of 2DEG charge concentrationregion num=1 mat=SiN y.min=0 y.max=$y1region num=2 mat=AlGaN y.min=$y1 y.max=$y2 donors=1e16 p=$xc polar calc.strain polar.scale=-0.5region num=3 mat=GaN y.min=$y2 y.max=$y4 donors=1e15 polar calc.strain polar.scale=-

10、0.5#elect name=source x.max=0 y.min=$y1 y.max=$y3elect name=drain x.min=6.0 y.min=$y1 y.max=$y3elect name=gate x.min=0.5 x.max=0.9 y.min=0.3 y.max=$y1elect name=gate x.min=0.5 x.max=$xl y.min=0.3 y.max=0.3gaussian characteristic=0.01 conc=1e18 n.type x.left=0.0 x.right=0.05 y.top=$y1 y.bottom=$y3 ra

11、tio.lateral=0.01 direction=y gaussian characteristic=0.01 conc=1e18 n.type x.left=$xd-0.05 x.right=$xd y.top=$y1 y.bottom=$y3 ratio.lateral=0.01 direction=y#dopingdoping# KM parameter set# material material=GaN eg300=3.4 align=0.8 permitt=9.5 mun=900 mup=10 vsatn=2e7 nc300=1.07e18 nv300=1.16e19 real

12、.index=2.67 imag.index=0.001 taun0=$lt taup0=$ltmaterial material=AlGaN affinity=3.82 eg300=3.96 align=0.8 permitt=9.5 mun=600 mup=10 nc300=2.07e18 nv300=1.16e19 real.index=2.5 imag.index=0.001 taun0=$lt taup0=$lt# model print fermi fldmob srhimpact material=GaN selb an1=2.9e8 an2=2.9e8 bn1=3.4e7 bn

13、2=3.4e7 ap1=2.9e8 ap2=2.9e8 bp1=3.4e7 bp2=3.4e7#contact name=gate work=5.23# 人為引進(jìn)光照以利于實(shí)現(xiàn)阻斷狀態(tài)下仿真收斂，這是仿真研究擊穿的常用手段 beam number=1 x.o=0 y.o=$y4+0.1 angle=270 wavelength=0.3#output con.band val.band band.param charge e.mob h.mob flowlines qss# IdVg 特性求解solvelog outf=ganfetex02_0.logsolve vdrain=0.05solve

14、 vstep=-0.2 vfinal=-2 name=gate solve vstep=-0.1 vfinal=-4 name=gate log offsave outfile=ganfetex02_0.strextract init infile=ganfetex02_0.logextract name=Vpinchoff xintercept(maxslope(curve(v.gate,i.drain)# IdVd 擊穿曲線method autonr gcarr.itlimit=10 clim.dd=1e3 clim.eb=1e3 nblockit=25 solve init# turn

15、on optical source to help initiate breakdown# # 人為引進(jìn)光照以利于實(shí)現(xiàn)阻斷狀態(tài)下仿真收斂 solve b1=$light index.check#solve nsteps=10 vfinal=$Vpinchoff name=gate b1=$lightsolve solve solve solvelog outf=ganfetex02_$index.log vstep=0.1 vfinal=1 name=drain b1=$lightvstep=1 vfinal=10 name=drain b1=$lightvstep=2 vfinal=20 n

16、ame=drain b1=$lightvstep=5 vfinal=1200 name=drain b1=$light cname=drain compl=0.5# change to current contact to resolve breakdown contact name=drain current solvesolve imult istep=1.1 ifinal=1 name=drain#save outfile=ganfetex02_$index.str#extract init infile=ganfetex02_1$index.logextract name=a slop

17、e(maxslope(curve(i.drain,v.drain)extract name=b xintercept(maxslope(curve(i.drain,v.drain)extract name=Vdmax max(curve(i.drain,v.drain) extract name=Idmax x.val from curve(i.drain,v.drain) where y.val=$Vdmax extract name=Vd1 $Vdmax - 20extract name=Id1 y.val from curve(v.drain,i.drain) where x.val=$

18、Vd1 extract name=c grad from curve(v.drain,i.drain) where x.val=$Vdmax extract name=d $Idmax - $c*$Vdmaxextract name=Vbr ($b - $d)/($c - (1/$a) extract name=Is $b + $Vbr/$atonyplot ganfetex02_1.str ganfetex02_2.str ganfetex02_3.str ganfetex02_4.str ganfetex02_5.str ganfetex02_6.str -set ganfetex02_1

19、.settonyplot -overlay ganfetex02_1.log ganfetex02_2.log ganfetex02_3.log ganfetex02_4.log ganfetex02_5.log ganfetex02_6.log -set ganfetex02_0.setquit正向I-V特性曲線如圖5所示,圖4-9為不同場板長度下半導(dǎo)體層中碰撞離化率的分布圖。 導(dǎo)通電壓接近0.8V。圖4場板長度L=1um的溝道中電子碰撞產(chǎn)生率模擬分布圖5場板長度L=1.25um的溝道中電子碰撞產(chǎn)生率模擬分布圖6場板長度L=1.5um的溝道中電子碰撞產(chǎn)生率模擬分布圖7場板長度L=1.75um

20、的溝道中電子碰撞產(chǎn)生率模擬分布圖8場板長度L=2um的溝道中電子碰撞產(chǎn)生率模擬分布圖9場板長度L=2.25um的溝道中電子碰撞產(chǎn)生率模擬分布圖10-12是半導(dǎo)體中電場強(qiáng)度分布隨場板長度的變化。50000004000000 _3000000 -20000001000000201345L(um)圖10不同場板長度的溝道中總電場分布圖11不同場板長度的溝道中X電場分布圖12不同場板長度的溝道中 丫電場分布圖13是Id-Vd擊穿曲線，可以清楚看到擊穿電壓從l=1um時(shí)的300V左右增大了 l=2.25um時(shí)的800V以上。圖13不同長度的場板在關(guān)斷情況下的輸出I-V特性通過對電場分布和碰撞離化率分布的

21、分析知道，場板變長一方面會(huì)減弱漏端電場峰值， 但另一方面也使發(fā)生碰撞離化的區(qū)域增大，所以這種構(gòu)型的場板不是越長越好。實(shí)驗(yàn)4短溝道MOS晶體管特性仿真1、實(shí)驗(yàn)內(nèi)容（1）短溝道LDD-MOS晶體管結(jié)構(gòu)定義。（2 ）轉(zhuǎn)移特性、輸出特性。（3）結(jié)構(gòu)和參數(shù)：器件結(jié)構(gòu)下圖所示，寬度1.2 um,襯底為P型、厚度0.8 um、濃度1X1014 cm-3、 晶向100，柵氧化層厚度13nm,柵為n+摻雜多晶硅。2、實(shí)驗(yàn)要求(1) 掌握器件工藝仿真和電氣性能仿真程序的設(shè)計(jì)(2) 改變表面濃度，改變柵氧化層厚度，觀察閾值電壓變化。3、實(shí)驗(yàn)過程#啟動(dòng) Athenago athe na#器件結(jié)構(gòu)網(wǎng)格劃分；line x

22、 loc=0.0 sp ac=0.1line x loc=0.2 sp ac=0.006line x loc=0.4 sp ac=0.006line x loc=0.6 sp ac=0.01line y loc=0.0 sp ac=0.002line y loc=0.2 sp ac=0.005line y loc=0.5 sp ac=0.05line y loc=0.8 sp ac=0.15(建議定義左邊一半)#初始化；#柵氧化，干氧11分鐘，溫度950.diffus time=11 tem p=950dryo2 press=1.00 hcl. pc=3提取柵氧化層厚度，extract nam

23、e=Gateoxide thickness material= Sio-2” mat.occno=1x.val=0.3#閾值電壓調(diào)整；implant boron dose=9.5e11 energy=10 crystal 提取表面濃度#淀積多晶硅；depo poly thick=0.2 divi=10#定義多晶硅柵etch poly left p1.x=0.35 #多晶硅氧化，濕氧， 900度， 3分鐘； method fermi compressdiffuse time=3 temp=900 weto2 press=1.0#多晶硅摻雜implant phosphor dose=3.0e13

24、energy=20 crystal#側(cè)墻的形成淀積氧化層： depo oxide thick=0.12 divisions=10 干法刻蝕： etch oxide dry thick=0.12#源漏砷注入，快速退火implant arsenic dose=5.0e15 energy=50 crystalmethod fermidiffuse time=1 temp=900 nitro press=1.0#金屬化etch oxide left p1.x=0.2deposit alumin thick=0.03 divi=2etch alumin right p1.x=0.18 #提取器件參數(shù)：結(jié)

25、深，源漏方塊電阻，側(cè)墻下的方塊電阻，閾值電壓# extract final S/D Xjextract name=nxj xj silicon mat.occno=1 x.val=0.1 junc.occno=1# extract the N+ regions sheet resistanceextract name=n+ sheet rho sheet.res material=Silicon mat.occno=1 x.val=0.05 region.occno=1# extract the sheet rho under the spacer, of the LDD region ext

26、ract name=ldd sheet rho sheet.res material=Silicon mat.occno=1 x.val=0.3 region.occno=1# extract the surface conc under the channel.extract name=chan surf conc surf.conc impurity=Net Doping material=Silicon mat.occno=1 x.val=0.45# extract a curve of conductance versus bias. extract start material=Po

27、lysilicon mat.occno=1 bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45extract done name=sheet cond v bias curve(bias,1dn.conduct material=Silicon mat.occno=1region.occno=1)outfile=extract.dat # extract the long chan Vtextract name=n1dvt 1dvt ntype vb=0.0 qss=1e10 x.val=0.49 #右邊結(jié)構(gòu)生成structure mirror righ

28、t#設(shè)置電極electrode name=gate x=0.5 y=0.1electrode name=source x=0.1 electrode name=drain x=1.1electrode name=substrate backside#輸出結(jié)構(gòu)圖structure outfile=mos1ex01_0.strtonyplot mos1ex01_0.str (每一道工藝定義后，都需要輸出 /畫出結(jié)構(gòu)圖 ) #啟動(dòng)器件仿真器 go atlas# 設(shè)置模型 models cvt srh print #設(shè)置界面電荷 contact name=gate n.poly interface q

29、f=3e10 #設(shè)置迭代模型 method newton #解初始化 solve init #設(shè)置漏極電壓 0.1V solve vdrain=0.1 # Ramp the gatelog outf=mos1ex01_1.log master#對柵極電壓掃描solve vgate=0 vstep=0.25 vfinal=3.0 name=gatesave outf=mos1ex01_1.str# 畫出轉(zhuǎn)移特性曲線tonyplot mos1ex01_1.log -set mos1ex01_1_log.set# 提取器件參數(shù)extract name=nvt (xintercept(maxslope

30、(curve(abs(v.gate),abs(i.drain) - abs(ave(v.drain)/2.0)extract name=nbeta slope(maxslope(curve(abs(v.gate),abs(i.drain) * (1.0/abs(ave(v.drain)extract name=ntheta (max(abs(v.drain) * $nbeta)/max(abs(i.drain) - (1.0 / (max(abs(v.gate) - ($nvt)#對不同的Vg，求Id與Vds的關(guān)系曲線solve initsolve vgate=1.1 outf=solve_t

31、mp1solve vgate=2.2 outf=solve_tmp2solve vgate=3.3 outf=solve_tmp3solve vgate=5 outf=solve_tmp4 load infile=solve_tmp1 log outf=mos_1.logsolve name=drain vdrain=0 vfinal=3.3 vstep=0.3 load infile=solve_tmp2log outf=mos_2.logsolve name=drain vdrain=0 vfinal=3.3 vstep=0.3 load infile=solve_tmp3log outf=mos_3.logsolve name=drain vdrain=0 vfinal=3.3 vstep=0.3 load infile=solve_tmp4log outf=mos_4.logsolve name=drain vdrain=0 vfinal=3.3 vstep=0.3 #畫出轉(zhuǎn)移特性曲線tonyplot -overla