IGZO TFT與ZnO TFT的比較 - 圖文-

1、 IGZO TFT與ZnO TFT的性能比較作者:吳為敬, 顏駿, 許志平, 賴志成, WU Wei-jing, YAN Jun, XU Zhi-ping, LAI Zhi-cheng作者單位:華南理工大學(xué)材料科學(xué)與工程學(xué)院,廣東,廣州,510641刊名: 液晶與顯示英文刊名:CHINESE JOURNAL OF LIQUID CRYSTALS AND DISPLAYS年,卷(期:2011,26(2被引用次數(shù):6次參考文獻(xiàn)(38條1.Kelly P J;Zhou Y;Postill A novel technique for the deposition of aluminium-doped

2、zinc oxide films 外文期刊 2003(012.葉志鎮(zhèn);呂建國;張銀珠氧化鋅半導(dǎo)體材料摻雜技術(shù)與應(yīng)用 20093.Chen G Y;Zheng K B;Mo X L Metal-free indoline dye sensitized zinc oxide nanowires solar cell外文期刊 2010(124.Polyakov A Y;Smirnov N B;Govorkov A V Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO外文期刊 2003(015

3、.Kim S;Song I;Park Y Channel layer used for manufacturing thin film transistor used as switching device or driving device for flat panel display device such as liquid crystal displayapparatus,comprises indium zinc oxide doped with transition metal,USA 20096.劉延輝;曾大文;王輝虎熱氧化納米zn制備ZnO厚膜及其氣敏特性的研究期刊論文-傳感技

4、術(shù)學(xué)報 2005(037.趙鳴;王衛(wèi)民;張昌松ZnO低壓壓敏電阻陶瓷材料研究進(jìn)展期刊論文-材料科學(xué)與工程學(xué)報 2005(068.Ohta H;Kawamura K I;Orita M Current injection emission fom a transparent p-n junction composed of p-Sr-Cu2O2/nZnO外文期刊 2000(049.Natsume Y;Sakata H Electrical and optical properties of zinc oxide films post-annealed in H2 after fabricatio

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9、態(tài)氧化物半導(dǎo)體薄膜晶體管的研究進(jìn)展期刊論文-液晶與顯示 2009(0222.Han D D;Wang Y;Zhang S D Fabrication and characteristics of ZnO-based thin film transistors 200823.Wang Y;Liu SW;Sun XW Highly transparent solution processed In-Ga-Zn oxide thin films and thinfilm transistors 201024.Yang Y H;Yang S S;Chou K S Characteristic enha

10、ncement of solution-processed In-Ga-Zn oxide thin-film transistors by laser annealing外文期刊 2010(0925.Lee J S;Chang S;Koo S M High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature 2010(0326.Lee H N;Kyung J W;Kang S K Current status of,challenges to,and perspective view o

11、f AM-OLED 200627.Martins R;Barquinha P;Pimentel A Transport in high mobility amorphous wide band gap indium zinc oxide films外文期刊 2005(0928.Wu W J;Yao R H;Li S H A Compact model for polysilicon TFTs leakage current including the poole-Frenkel effect外文期刊 2007(1129.程松華ZnO薄膜晶體管有源層的磁控濺射制備研究學(xué)位論文 200630.Ch

12、ang S J;Su Y K;Shei Y P High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering.I Material study 1995(0231.Pimentel A;Fortunato E;Goncalves A Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices外文期刊 2005(1-232.Yabuta H;Sano M;Abe K

13、High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering外文期刊 2006(1133.Aoi T;Oka N;Sato Y DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO films with H2O introduction外文期刊 201034.Cross R B M;De Souza M M Investigatin

14、g the stability of zinc oxide thin film transistors外文期刊 2006(2635.Lee J M;Cho I T;Lee J H Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors 2008(0936.Powell M J;Vanberkel C;Franklin A R Defect pool in amorphous-silicon thin-film tra

15、nsisters1992(0837.張新安;張景文;張偉風(fēng)退火溫度對ZnO薄膜晶體管電學(xué)性能的影響期刊論文-液晶與顯示 2009(0438.Suresh A;Muth J F Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors外文期刊 2008(03本文讀者也讀過(5條1.張安.趙小如.段利兵.趙建林.白曉軍.Zhang An.Zhao Xiaoru.Duan Libing.Zhao Jianlin.Bai Xiaojun基于表面勢的非晶IGZO薄膜

16、晶體管分析模型期刊論文-半導(dǎo)體技術(shù)2011,36(42.王彬.鄧少芝.許寧生.姚彥可.佘峻聰基于直流磁控濺射方法的InGaZnO薄膜晶體管制備會議論文-20103.姚建可.許寧生.鄧少芝.陳軍.佘峻聰.王彬.YAO Jian-ke.XU Ning-sheng.DENG Shao-zhi.CHEN Jun.SHE Jun-cong.WANG Bin塑料基底a-Si:H TFT制備技術(shù)期刊論文-液晶與顯示2010,25(44.倪若惠.楊新.劉紅君.張羿.NI Rou-hui.YANG Xin.LIU Hong-jun.ZHANG Yi濺射功率和氣氛對Sialon薄膜介電性能的影響期刊論文-現(xiàn)代顯示2009(45.劉翔.薛建設(shè).賈勇.周偉峰.肖靜.曹占峰.LIU Xiang.XUE Jian-she.JIA Yong.ZHOU Wei-feng.XIAO Jing.CAO Zhan-feng金屬氧化物IGZO薄膜晶體管的最新研究進(jìn)展期刊論文-現(xiàn)代顯示2010(10引證文獻(xiàn)(6條1.洪飛.譚莉.朱棋鋒.向長江.韓學(xué)斌.張其國.郭曉東.申劍鋒高性能頂柵結(jié)構(gòu)有機(jī)薄膜晶體管期刊論文-液晶與顯示 2012(32.姜曉輝.張家祥.王亮.郭建.沈奇雨.曲連杰.張文余