自動(dòng)化專業(yè)英語(yǔ)4課件

1、 PART 1Electrical and Electronic Engineering BasicsSection 4 Power Semiconductor Devices New Words and ExpressionsLanguage pointsComplementDate: 2022-4-30 Page: 3常用低壓電器 CH1Date: 2022-4-30 Page: 3專業(yè)英語(yǔ) CH1New Words and Expressionsconverter n. 轉(zhuǎn)換器，換流器，變流器matrix n. 模型，矩陣diode n. 二極管，半導(dǎo)體二極管thyristor n. 晶

2、閘管triac n. 三端雙向晶閘管GTO 門極可關(guān)斷晶閘管BJT 雙極結(jié)型晶體管power MOSFET 電力MOS場(chǎng)效應(yīng)晶體管SIT 靜態(tài)感應(yīng)晶體管Date: 2022-4-30 Page: 4常用低壓電器 CH1Date: 2022-4-30 Page: 4專業(yè)英語(yǔ) CH1New Words and ExpressionsIGBT 絕緣柵雙極型晶體管MCT MOS控制晶閘管IGCT 集成門極換向晶閘管rectification n. 整流feedback n. 反饋freewheeling n. 單向傳動(dòng)snubber n. 緩沖器，減震器intrinsic adj. 固有的，體內(nèi)的，本

3、征Date: 2022-4-30 Page: 5常用低壓電器 CH1Date: 2022-4-30 Page: 5專業(yè)英語(yǔ) CH1New Words and Expressionsforward biased 正向偏置conduction n. 導(dǎo)電,傳導(dǎo)reverse biased 反向偏置leakage current 漏電流threshold n. 門限，閾限，極限breakdown n. 擊穿，雪崩recovery n. 恢復(fù)schottky diode 肖基特二極管Date: 2022-4-30 Page: 6常用低壓電器 CH1Date: 2022-4-30 Page: 6專業(yè)英語(yǔ)

4、 CH1New Words and Expressionsworkhorse n. 重載，重負(fù)荷thyratron n. 閘流管breakover n. 導(dǎo)通latching current 閉鎖電流holding current 保持電流phase controlled 相控的asymmetric adj. 不對(duì)稱的force commutated 強(qiáng)制換向Date: 2022-4-30 Page: 7常用低壓電器 CH1Date: 2022-4-30 Page: 7專業(yè)英語(yǔ) CH1New Words and ExpressionsSMPS 開關(guān)電源BLDM 無(wú)刷直流電動(dòng)機(jī)stepper m

5、otor 步進(jìn)電動(dòng)機(jī)hybrid n. 混合emitter n. 發(fā)射極saturation n. 飽和 Date: 2022-4-30 Page: 8常用低壓電器 CH1Date: 2022-4-30 Page: 8專業(yè)英語(yǔ) CH1Language Points1 Power semiconductor devices cons-titute the heart of modern power electronic apparatus. They are used in power elec-tronic conversion in the form of a matrix of on-of

6、f switches. And the switching mode power conversion gives high efficiency.Date: 2022-4-30 Page: 9常用低壓電器 CH1Date: 2022-4-30 Page: 9專業(yè)英語(yǔ) CH1Language Points3 They are also used in feedback and the freewheeling functions of converters and snubbers. A typical power diode has P-I-N structure, that is, it

7、is a P-N junction with a near intrinsic semiconductor layer (I-layer) in the middle to sustain reverse voltage.Date: 2022-4-30 Page: 10常用低壓電器 CH1Date: 2022-4-30 Page: 10專業(yè)英語(yǔ) CH1Language Points4 If the reverse voltage exceeds a thre- shold value, called the breakdown voltage, the device goes through

8、avalanche break-down, which is when reverse current becomes large and the diode is destroyed by heating due to large power dissipation in the junction.Date: 2022-4-30 Page: 11常用低壓電器 CH1Date: 2022-4-30 Page: 11專業(yè)英語(yǔ) CH1Language Points5 Thyristors, or silicon-controlled rectifiers (SCRs) have been the

9、traditional workhorses for bulk power conversion and control in industry. The modern era of solid-state power electronics started due to the introduction of this device in the late 1950s.Date: 2022-4-30 Page: 12常用低壓電器 CH1Date: 2022-4-30 Page: 12專業(yè)英語(yǔ) CH1Language Points6 Often, it is a family name tha

10、t includes SCR, TRIAC, GTO,MCT, and IGCT. Thy-ristors can be classified as standard, or slow phase-control-type and fast-switching, voltage-fed inverter-type. The inverter-type has recently become obsolete.Date: 2022-4-30 Page: 13常用低壓電器 CH1Date: 2022-4-30 Page: 13專業(yè)英語(yǔ) CH1Language Points7 Basically,

11、thyristor is a three-junction P-N-P-N device, where P-N-P and N-P-N component transistors are connected in regenerative feedback mode. The device blocks voltage in both the forward and reverse direction (symmetric blocking).Date: 2022-4-30 Page: 14常用低壓電器 CH1Date: 2022-4-30 Page: 14專業(yè)英語(yǔ) CH1Language P

12、oints8 A triacs has a complex multiple-junction structure, but functionally, it is an integration of a pair of phase-controlled thyristors connected in inverse-parallel on the same chip.Date: 2022-4-30 Page: 15常用低壓電器 CH1Date: 2022-4-30 Page: 15專業(yè)英語(yǔ) CH1Language Points9 A well-designed RC snubber is e

13、ssen-tial for a triac circuit. Triacs are used in light dimming, heating control, alliance-type motor drives, and solid-state relays with typically 50/60 Hz supply frequency.Date: 2022-4-30 Page: 16常用低壓電器 CH1Date: 2022-4-30 Page: 16專業(yè)英語(yǔ) CH1Language Points11GTOs are available with asymmetric and symm

14、etric voltage-blocking capabilities, which are used in voltage-fed and current-fed converters, respectively12GTOs are used in motor drives, static VAR compensators (SVCs), and AC/DC power supplies with high power ratings. When large-power GTOs became available, they ousted the force-commutated, volt

15、age-fed thyristor inverters.Date: 2022-4-30 Page: 17常用低壓電器 CH1Date: 2022-4-30 Page: 17專業(yè)英語(yǔ) CH1Language Points13 Unlike the devices discussed so far, a power MOSFET (metal-oxide semi-conductor field-effect transistor) is a unipolar, majority carrier, “zero junction”, voltage-controlled device14 MOSFE

16、Ts are extremely popular in low-voltage, low-power, and high-frequen-cy switching applications, include switching mode power supplies, brushless DC mo-tors, stepper motor drives, and solid-state DC relays.Date: 2022-4-30 Page: 18常用低壓電器 CH1Date: 2022-4-30 Page: 18專業(yè)英語(yǔ) CH1Language Points15 The introdu

17、ction of insulated gate bipolar transistors in the mid-1980s was an important milestone in the history of power semiconductor devicesThey are extremely popular devices in power electronics up to medium power range and are applied extensively in DC/AC drives and power supply systems. They ousted BJTs

18、 in the upper range, and are currently ousting GTOs in the lower power range.Date: 2022-4-30 Page: 19常用低壓電器 CH1Date: 2022-4-30 Page: 19專業(yè)英語(yǔ) CH1Language Points16 An IGBT is basically a hybrid MOS-gated turn-on/off bipolar transistor that combines the advantages of both a MOSFET and BJT. Its architect

19、ure is essentially similar to that of a MOSFET, except an additional P+ layer has been added at the collector over the N+ drain layer of the MOSFET.Date: 2022-4-30 Page: 20常用低壓電器 CH1Date: 2022-4-30 Page: 20專業(yè)英語(yǔ) CH1Language Points17 An MOS-controlled thyristor, as the name indicates, is a thyristor-l

20、ike, trigger-into-conduction hybrid device that can be turned on or off by a short voltage pulse on the MOS gate. The device has a microcell construction, where thousands of microdevices are connected in parallel on the same chip. The cell structure is somewhat complex.Date: 2022-4-30 Page: 21常用低壓電器

21、 CH1Date: 2022-4-30 Page: 21專業(yè)英語(yǔ) CH1Language Points18 The MCT was commercially introduced in 1992, and currently, medium-power devices are available commercially. The future acceptance of the device remains uncertain at this point.19 Basically, it is a high-voltage, high-power, hard-driven, asymmetr

22、ic-blocking GTO with unity turn-off current gain.Date: 2022-4-30 Page: 22常用低壓電器 CH1Date: 2022-4-30 Page: 22專業(yè)英語(yǔ) CH1Language Points21 IGCT has been applied in power system intertie installations and medium-power industrial drives.Date: 2022-4-30 Page: 23常用低壓電器 CH1Date: 2022-4-30 Page: 23專業(yè)英語(yǔ) CH1Exerc

23、ises I. Translate the following into Chinese All the simple circuit elements that will be considered in the work that follows can be classified according to the relationship of the current through the element to the voltage across the element. For instance, if the voltage across the element is direc

24、tly proportional to the current through it, or u = ki, we shall call the element a resistor. Other types of simple circuit elements have a terminal voltage which is proportional to the time derivative or the integral with respect to time of the current. There Date: 2022-4-30 Page: 24常用低壓電器 CH1Date:

25、2022-4-30 Page: 24專業(yè)英語(yǔ) CH1Exercises I. Translate the following into Chinese are also elements in which the voltage is completely independent of the current or the current is completely independent of the voltage; these are the independent sources. Furthermore, we shall need to define special kinds o

26、f sources in which the source voltage or current depends upon a current or voltage elsewhere in the circuit; such sources will be termed dependent sources or controlled sources. Date: 2022-4-30 Page: 25常用低壓電器 CH1Date: 2022-4-30 Page: 25專業(yè)英語(yǔ) CH1Vocabulary Characteristic I一、前綴一、前綴 (prefixes)1. anti-/c

27、ounter- 反，抗，防，逆，耐 antivirus 防病毒； anti-interference 抗干擾； anti-phase 反相； counterclockwise 逆時(shí)針方向的（地）； countercurrent 反向電流。2. auto- 自動(dòng)、自 autotransformer 自耦變壓器； autocoder 自動(dòng)編碼器； automodulation 自調(diào)制； automobile 自動(dòng)車。 Date: 2022-4-30 Page: 26常用低壓電器 CH1Date: 2022-4-30 Page: 26專業(yè)英語(yǔ) CH1Vocabulary Characteristic

28、 I3. bi- 雙，重 bipolar relay 雙極繼電器； bilateral 兩邊的，雙邊的； 雙金屬。4. co- 共，同，一起，相互 coaxial cable 同軸電纜； cosine 余弦。5. de- 表示相反動(dòng)作 demodulator 解調(diào)器； deform 變形。6. deci- 表示十分之一，分 decimal 十進(jìn)制；decibel 分貝;decimeter 分米 Date: 2022-4-30 Page: 27常用低壓電器 CH1Date: 2022-4-30 Page: 27專業(yè)英語(yǔ) CH1Vocabulary Characteristic I7. di- 雙

29、，偶，兩 diode 二極管； dipole 偶極子； dioxide 二氧化物。8. dis- 表示相對(duì)單詞的反義詞 displace 位移； disconnect 解開，斷開。9. equi- 同等，均 equipartition 均分； equilibrium 均衡，平衡。10. hydro- 水，氫化 hydrodynamic 水力的，水壓的，流體動(dòng)力學(xué)的； hydroelectric水力發(fā)電的。11. hyper- 高，超，重，極度 Date: 2022-4-30 Page: 28常用低壓電器 CH1Date: 2022-4-30 Page: 28專業(yè)英語(yǔ) CH1Vocabulary

30、 Characteristic I12. in- 表示否定 inaccurate不精確的；invariable 不變的。13. inter- 相互，際間 internet 互聯(lián)網(wǎng)；interchange 互換； interface 界面；intercity train 城際列車。14. mal- 不，失 malfunction 失靈，故障；malformation 畸形； maltreat 濫用，亂用。15. mega- 兆，百萬(wàn) megawatt 兆瓦；megaton 百萬(wàn)噸級(jí)。 Date: 2022-4-30 Page: 29常用低壓電器 CH1Date: 2022-4-30 Page:

31、29專業(yè)英語(yǔ) CH1Vocabulary Characteristic I16. micro- 微觀，微型，百萬(wàn)分之一 microelectronics 微電子學(xué)； microcomputer 微型計(jì)算機(jī)； microfilm 微縮膠卷； micrometer 微米； microwave 微波。17. mini- 小 minicomputer 小型計(jì)算機(jī)； minibus 微型公共汽車。18. multi- 多 multi-frequency 多頻率。19. over- 過(guò)，超，太 overfrequency 超頻；overcharge 過(guò)度充電。 Date: 2022-4-30 Page:

32、30常用低壓電器 CH1Date: 2022-4-30 Page: 30專業(yè)英語(yǔ) CH1Vocabulary Characteristic I20. photo- 光，光電，光敏 photocell 光電池；photohead 光電傳感頭； photoreceptor 感光器。21. post- 后 postfault 故障后。22. pre- 在前，預(yù)先 preheat 預(yù)熱；precondition 前提，先決條件。23. semi- 半 semiconductor 半導(dǎo)體。24. sub- 子，亞，低，次，副 subsystem 子系統(tǒng)，分系統(tǒng)；substation 變電站 subcod

33、e 子碼。 Date: 2022-4-30 Page: 31常用低壓電器 CH1Date: 2022-4-30 Page: 31專業(yè)英語(yǔ) CH1Vocabulary Characteristic I25. tele- 遠(yuǎn)，電 telemetry 遙測(cè)術(shù)；telecommunication 電信； teleswitch 遙控開關(guān)；telecontrol 遙控。26. thermo- 熱 thermostat 恒溫器；thermoelectric 熱電的； thermo-fuse 熱熔絲。27. tri- 三 triangle 三角形。 28. ultra- 超，過(guò) ultra-high-freq

34、uency 超高頻；ultrasonic 超聲波29. un- 表示相反的意思 unequal 不等；unvarying 不變的。 Date: 2022-4-30 Page: 32常用低壓電器 CH1Date: 2022-4-30 Page: 32專業(yè)英語(yǔ) CH1Vocabulary Characteristic II一、后綴一、后綴 (suffixes)1. able 形容詞的詞尾，表示“的” stable 穩(wěn)定的；reliable 可靠的； comparable 可比較的。 2. al 形容詞詞尾，表示“的” digital 數(shù)字的； functional 功能的，函數(shù)的。3. -ance

35、/-ence 名詞詞尾 capacitance 電容；resistance 電阻； reactance 電抗； existence 存在。4. ary 形容詞詞尾，表示“” elementary 初步的；momentary 瞬息的。 Date: 2022-4-30 Page: 33常用低壓電器 CH1Date: 2022-4-30 Page: 33專業(yè)英語(yǔ) CH1Vocabulary Characteristic II5. en 一般是形容詞+en構(gòu)成，表示“使” soften 軟化； harden 使變硬。 6. -er/-or 表示“機(jī)器、設(shè)備、物件等” air-oil booster 氣-液增壓器； air compressor 空氣壓縮機(jī)。7. free 形容詞詞尾，表示“無(wú)的”，“免于的” loss-free 無(wú)損耗的； dust-free 無(wú)塵的。8. ics 名詞詞尾，表示學(xué)科名稱 physics 物理學(xué)；mathematics 數(shù)學(xué)； electronics 電子學(xué)。 Date: 2022-4-30 Page: 34常用低壓電器 CH1Date: 2022-4-30 P