半導(dǎo)體一些術(shù)語(yǔ)的中英文對(duì)照

1、半導(dǎo)體一些術(shù)語(yǔ)的中英文對(duì)照離子注入機(jī)ionimplanterLSS理論LindhandScharffandSchiotttheory又稱“林漢德斯卡夫斯高特理論.溝道效應(yīng)channelingeffect射程分布rangedistribution深度分布depthdistribution投影射程projectedrange阻止距離stoppingdistance阻止本領(lǐng)stoppingpower標(biāo)準(zhǔn)阻止截面standardstoppingcrosssection退火annealing激活能activationenergy等溫退火isothermalannealing激光退火laseranneal

2、ing應(yīng)力感生缺陷stress-induceddefect擇優(yōu)取向preferredorientation制版工藝maskmakingtechnology圖形畸變patterndistortion初縮firstminification精縮finalminification母版mastermask鉻版chromiumplate干版dryplate乳膠版emulsionplate透明版seethroughplate高分辨率版highresolutionplate，HRP超微粒干版plateforultra-microminiaturization掩模mask掩模對(duì)準(zhǔn)maskalignment對(duì)準(zhǔn)精

3、度alignmentprecision光刻膠photoresist又稱“光致抗蝕劑”。負(fù)性光刻膠negativephotoresist正性光刻膠positivephotoresist無(wú)機(jī)光刻膠inorganicresist多層光刻膠multilevelresist電子束光刻膠electronbeamresistX射線光刻膠X-rayresist刷洗scrubbing甩膠spinning涂膠photoresistcoating后烘postbaking光刻photolithographyX射線光刻X-raylithography電子束光刻electronbeamlithography離子束光刻io

4、nbeamlithography深紫外光刻deep-UVlithography光刻機(jī)maskaligner投影光刻機(jī)projectionmaskaligner曝光exposure接觸式曝光法contactexposuremethod接近式曝光法proximityexposuremethod光學(xué)投影曝光法opticalprojectionexposuremethod電子束曝光系統(tǒng)electronbeamexposuresystem分步重復(fù)系統(tǒng)step-andrepeatsystem顯影development線寬linewidth去膠strippingofphotoresist氧化去膠removi

5、ngofphotoresistbyoxidation等離子體去膠removingofphotoresistbyplasma刻蝕etching干法刻蝕dryetching反應(yīng)離子刻蝕reactiveionetching,RIE各向同性刻蝕isotropicetching各向異性刻蝕anisotropicetching反應(yīng)濺射刻蝕reactivesputteretching離子銑ionbeammilling又稱“離子磨削”。等離子體刻蝕plasmaetching鉆蝕undercutting剝離技術(shù)liftofftechnology又稱“浮脫工藝”。終點(diǎn)監(jiān)測(cè)endpointmonitoring金屬化

6、metallization互連interconnection多層金屬化multilevelmetallization電遷徙electromigration回流reflow磷硅玻璃phosphorosilicateglass硼磷硅玻璃boron-phosphorosilicateglass鈍化工藝passivationtechnology多層介質(zhì)鈍化multilayerdielectricpassivation劃片scribing電子束切片electronbeamslicing燒結(jié)sintering印壓indentation熱壓焊thermocompressionbonding熱超聲焊therm

7、osonicbonding冷焊coldwelding點(diǎn)焊spotwelding球焊ballbonding楔焊wedgebonding內(nèi)引線焊接innerleadbonding外引線焊接outerleadbonding梁式引線beamlead裝架工藝mountingtechnology附著adhesion封裝packaging金屬封裝metallicpackaging陶瓷封裝ceramicpackaging扁平封裝flatpackaging塑封plasticpackage玻璃封裝glasspackaging微封裝micropackaging又稱“微組裝”。管殼package管芯die引線鍵合le

8、adbonding引線框式鍵合leadframebonding帶式自動(dòng)鍵合tapeautomatedbonding，TAB激光鍵合laserbonding超聲鍵合ultrasonicbonding紅外鍵合infraredbonding微電子辭典Abruptjunction突變結(jié)Acceleratedtesting加速實(shí)驗(yàn)Acceptor受主Acceptoratom受主原子Accumulation積累、堆積Accumulatingcontact積累接觸Accumulationregion積累區(qū)Accumulationlayer積累層Activeregion有源區(qū)Activecomponent有源

9、元Activedevice有源器件Activation激活A(yù)ctivationenergy激活能Activeregion有源(放大)區(qū)Admittance導(dǎo)納Allowedband允帶Alloyjunctiondevice合金結(jié)器件Aluminum(Aluminium)鋁Aluminum-oxide鋁氧化物Aluminumpassivation鋁鈍化Ambipolar雙極的Ambienttemperature環(huán)境溫度Amorphous無(wú)定形的,非晶體的Amplifier功放擴(kuò)音器放大器Analogue(Analog)comparator模擬比較器Angstrom埃Anneal退火Anisotr

10、opic各向異性的Anode陽(yáng)極Arsenic(AS)砷Auger俄歇Augerprocess俄歇過(guò)程Avalanche雪崩Avalanchebreakdown雪崩擊穿Avalancheexcitation雪崩激發(fā)Backgroundcarrier本底載流子Backgrounddoping本底摻雜Backward反向Backwardbias反向偏置Ballastingresistor整流電阻Ballbond球形鍵合Band能帶Bandgap能帶間隙Barrier勢(shì)壘Barrierlayer勢(shì)壘層Barrierwidth勢(shì)壘寬度Base基極Basecontact基區(qū)接觸Basestretchin

11、g基區(qū)擴(kuò)展效應(yīng)Basetransittime基區(qū)渡越時(shí)間Basetransportefficiency基區(qū)輸運(yùn)系數(shù)Base-widthmodulation基區(qū)寬度調(diào)制Basisvector基矢Bias偏置Bilateralswitch雙向開關(guān)Binarycode二進(jìn)制代碼Binarycompoundsemiconductor二元化合物半導(dǎo)體Bipolar雙極性的BipolarJunctionTransistor(BJT)雙極晶體管Bloch布洛赫Blockingband阻擋能帶Blockingcontact阻擋接觸Body-centered體心立方Bodycentredcubicstructu

12、re體立心結(jié)構(gòu)Boltzmann波爾茲曼Bond鍵、鍵合Bondingelectron價(jià)電子Bondingpad鍵合點(diǎn)Bootstrapcircuit自舉電路Bootstrappedemitterfollower自舉射極跟隨器Boron硼B(yǎng)orosilicateglass硼硅玻璃Boundarycondition邊界條件Boundelectron束縛電子Breadboard模擬板、實(shí)驗(yàn)板Breakdown擊穿Breakover轉(zhuǎn)折Brillouin布里淵Brillouinzone布里淵區(qū)Built-in內(nèi)建的Build-inelectricfield內(nèi)建電場(chǎng)Bulk體/體內(nèi)Bulkabsorp

13、tion體吸收Bulkgeneration體產(chǎn)生Bulkrecombination體復(fù)合Burnin老化Burnout燒毀Buriedchannel埋溝Burieddiffusionregion隱埋擴(kuò)散區(qū)Can外殼Capacitance電容Capturecrosssection俘獲截面Capturecarrier俘獲載流子Carrier載流子、載波Carrybit進(jìn)位位Carryinbit進(jìn)位輸入Carryoutbit進(jìn)位輸出Cascade級(jí)聯(lián)Case管殼Cathode陰極Center中心Ceramic陶瓷(的)Channel溝道Channelbreakdown溝道擊穿Channelcurre

14、nt溝道電流Channeldoping溝道摻雜Channelshortening溝道縮短Channelwidth溝道寬度Characteristicimpedance特征阻抗Charge電荷、充電Charge-compensationeffects電荷補(bǔ)償效應(yīng)Chargeconservation電荷守恒Chargeneutralitycondition電中性條件Chargedrive/exchange/sharing/transfer/storage電荷驅(qū)動(dòng)/交換/共享/轉(zhuǎn)移/存儲(chǔ)Chemmicaletching化學(xué)腐蝕法ChemicallyPolish化學(xué)拋光Chemmically-Mech

15、anicallyPolish(CMP)化學(xué)機(jī)械拋光Chip芯片Chipyield芯片成品率Clamped箝位Clampingdiode箝位二極管Cleavageplane解理面Clockrate時(shí)鐘頻率Clockgenerator時(shí)鐘發(fā)生器Clockflip-flop時(shí)鐘觸發(fā)器Close-packedstructure密堆積結(jié)構(gòu)Closeloopgain閉環(huán)增益Collector集電極Collision碰撞CompensatedOPAMP補(bǔ)償運(yùn)放Commonbase/collector/emitterconnection共基極/集電極/發(fā)射極連接Commongate/drain/sourcec

16、onnection共柵/漏/源連接Commonmodegain共模增益Commonmodeinput共模輸入Common-moderejectionratio（CMRR）共模抑制比Compatibility兼容性Compensation補(bǔ)償Compensatedimpurities補(bǔ)償雜質(zhì)Compensatedsemiconductor補(bǔ)償半導(dǎo)體ComplementaryDarlingtoncircuit互補(bǔ)達(dá)林頓電路ComplementaryMetal-Oxide-SemiconductorFieldEffect-Transistor（CMOS）互補(bǔ)金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管Complem

17、entaryerrorfunction余誤差函數(shù)Computeraideddesign（CAD）/test（CAT）/manufacture（CAM）計(jì)算機(jī)輔助設(shè)計(jì)/測(cè)試/制造CompoundSemiconductor化合物半導(dǎo)體Conductance電導(dǎo)Conductionband（edge）導(dǎo)帶（底）Conductionlevel/state導(dǎo)帶態(tài)Conductor導(dǎo)體Conductivity電導(dǎo)率Configuration組態(tài)Conlomb庫(kù)侖ConpledConfigurationDevices結(jié)構(gòu)組態(tài)Constants物理常數(shù)Constantenergysurface等能面Const

18、antsourcediffusion恒定源擴(kuò)散Contact接觸Contamination治污Continuityequation連續(xù)性方程Contacthole接觸孔Contactpotential接觸電勢(shì)Continuitycondition連續(xù)性條件Contradoping反摻雜Controlled受控的Converter轉(zhuǎn)換器Conveyer傳輸器Copperinterconnectionsystem銅互連系統(tǒng)Couping耦合Covalent共階的Crossover跨交Critical臨界的Crossunder穿交Crucible坩堝Crystaldefect/face/orient

19、ation/lattice晶體缺陷/晶面/晶向/晶格Currentdensity電流密度Curvature曲率Cutoff截止Currentdrift/dirve/sharing電流漂移/驅(qū)動(dòng)/共享CurrentSense電流取樣Curvature彎曲Customintegratedcircuit定制集成電路Cylindrical柱面的Czochralshicrystal直立單晶Czochralskitechnique切克勞斯基技術(shù)（Cz法直拉晶體J）Danglingbonds懸掛鍵Darkcurrent暗電流Deadtime空載時(shí)間Debyelength德拜長(zhǎng)度De.broglie德布洛意D

20、ecderate減速Decibel（dB）分貝Decode譯碼Deepacceptorlevel深受主能級(jí)Deepdonorlevel深施主能級(jí)Deepimpuritylevel深度雜質(zhì)能級(jí)Deeptrap深陷阱Defeat缺陷Degeneratesemiconductor簡(jiǎn)并半導(dǎo)體Degeneracy簡(jiǎn)并度Degradation退化DegreeCelsius(centigrade)/Kelvin攝氏/開氏溫度Delay延遲Density密度Densityofstates態(tài)密度Depletion耗盡Depletionapproximation耗盡近似Depletioncontact耗盡接觸De

21、pletiondepth耗盡深度Depletioneffect耗盡效應(yīng)Depletionlayer耗盡層DepletionMOS耗盡MOSDepletionregion耗盡區(qū)Depositedfilm淀積薄膜Depositionprocess淀積工藝Designrules設(shè)計(jì)規(guī)則Die芯片(復(fù)數(shù)dice)Diode二極管Dielectric介電的Dielectricisolation介質(zhì)隔離Difference-modeinput差模輸入Differentialamplifier差分放大器Differentialcapacitance微分電容Diffusedjunction擴(kuò)散結(jié)Diffusi

22、on擴(kuò)散Diffusioncoefficient擴(kuò)散系數(shù)Diffusionconstant擴(kuò)散常數(shù)Diffusivity擴(kuò)散率Diffusioncapacitance/barrier/current/furnace擴(kuò)散電容/勢(shì)壘/電流/爐Digitalcircuit數(shù)字電路Dipoledomain偶極疇Dipolelayer偶極層Direct-coupling直接耦合Direct-gapsemiconductor直接帶隙半導(dǎo)體Directtransition直接躍遷Discharge放電Discretecomponent分立元件Dissipation耗散Distribution分布Distri

23、butedcapacitance分布電容Distributedmodel分布模型Displacement位移Dislocation位錯(cuò)Domain疇Donor施主Donorexhaustion施主耗盡Dopant摻雜劑Dopedsemiconductor摻雜半導(dǎo)體Dopingconcentration摻雜濃度Double-diffusiveMOS(DMOS)雙擴(kuò)散MOS.Drift漂移Driftfield漂移電場(chǎng)Driftmobility遷移率Dryetching干法腐蝕Dry/wetoxidation干/濕法氧化Dose劑量Dutycycle工作周期Dual-inlinepackage(DI

24、P)雙列直插式封裝Dynamics動(dòng)態(tài)Dynamiccharacteristics動(dòng)態(tài)屬性Dynamicimpedance動(dòng)態(tài)阻抗Earlyeffect厄利效應(yīng)Earlyfailure早期失效Effectivemass有效質(zhì)量Einsteinrelation(ship)愛因斯坦關(guān)系ElectricEraseProgrammableReadOnlyMemory(E2PROM)一次性電可擦除只讀存儲(chǔ)器Electrode電極Electrominggratim電遷移Electronaffinity電子親和勢(shì)Electronicgrade電子能Electronbeamphotoresistexposur

25、e光致抗蝕劑的電子束曝光Electrongas電子氣Electrongradewater電子級(jí)純水Electrontrappingcenter電子俘獲中心ElectronVolt(eV)電子伏Electrostatic靜電的Element元素/元件/配件Elementalsemiconductor元素半導(dǎo)體Ellipse橢圓Ellipsoid橢球Emitter發(fā)射極Emitter-coupledlogic發(fā)射極耦合邏輯Emitter-coupledpair發(fā)射極耦合對(duì)Emitterfollower射隨器Emptyband空帶Emittercrowdingeffect發(fā)射極集邊(擁擠)效應(yīng)End

26、urancetest=lifetest壽命測(cè)試Energystate能態(tài)Energymomentumdiagram能量一動(dòng)量(EK)圖Enhancementmode增強(qiáng)型模式EnhancementMOS增強(qiáng)性MOSEntefic(低)共溶的Environmentaltest環(huán)境測(cè)試Epitaxial外延的Epitaxiallayer外延層Epitaxialslice外延片Expitaxy外延Equivalentcurcuit等效電路Equilibriummajority/minoritycarriers平衡多數(shù)/少數(shù)載流子ErasableProgrammableROM(EPROM)可搽取(編程

27、)存儲(chǔ)器Errorfunctioncomplement余誤差函數(shù)Etch刻蝕Etchant刻蝕劑Etchingmask抗蝕劑掩模Excesscarrier過(guò)剩載流子Excitationenergy激發(fā)能Excitedstate激發(fā)態(tài)Exciton激子Extrapolation外推法Extrinsic非本征的Extrinsicsemiconductor雜質(zhì)半導(dǎo)體Facecentered面心立方Falltime下降時(shí)間Fan-in扇入Fanout扇出Fastrecovery快恢復(fù)Fastsurfacestates快界面態(tài)Feedback反饋Fermilevel費(fèi)米能級(jí)FermiDiracDistr

28、ibution費(fèi)米狄拉克分布Femipotential費(fèi)米勢(shì)Fickequation菲克方程(擴(kuò)散)Fieldeffecttransistor場(chǎng)效應(yīng)晶體管Fieldoxide場(chǎng)氧化層Filledband滿帶Film薄膜Flashmemory閃爍存儲(chǔ)器Flatband平帶Flatpack扁平封裝Flickernoise閃爍(變)噪聲Flip-floptoggle觸發(fā)器翻轉(zhuǎn)Floatinggate浮柵Fluorideetch氟化氫刻蝕Forbiddenband禁帶Forwardbias正向偏置Forwardblocking/conducting正向阻斷/導(dǎo)通Frequencydeviationno

29、ise頻率漂移噪聲Frequencyresponse頻率響應(yīng)Function函數(shù)Gain增益Gallium-Arsenide(GaAs)砷化鉀Gamyrayr射線Gate門、柵、控制極Gateoxide柵氧化層Gauss(ian)高斯Gaussiandistributionprofile高斯摻雜分布Generationrecombination產(chǎn)生復(fù)合Geometries幾何尺寸Germanium(Ge)鍺Graded緩變的Graded(gradual)channel緩變溝道Gradedjunction緩變結(jié)Grain晶粒Gradient梯度Grownjunction生長(zhǎng)結(jié)Guardring保

30、護(hù)環(huán)GummelPoommodel葛謀潘模型Gunneffect狄氏效應(yīng)Hardeneddevice輻射加固器件Heatofformation形成熱Heatsink散熱器、熱沉Heavy/lightholeband重/輕空穴帶Heavysaturation重?fù)诫sHelleffect霍爾效應(yīng)Heterojunction異質(zhì)結(jié)Heterojunctionstructure異質(zhì)結(jié)結(jié)構(gòu)HeterojunctionBipolarTransistor(HBT)異質(zhì)結(jié)雙極型晶體Highfieldproperty高場(chǎng)特性HighperformanceMOS。(H-MOS)高性能MOS。Hormalized歸一

31、化Horizontalepitaxialreactor臥式外延反應(yīng)器Hotcarrior熱載流子Hybridintegration混合集成Image-force鏡象力Impactionization碰撞電離Impedance阻抗Imperfectstructure不完整結(jié)構(gòu)Implantationdose注入劑量Implantedion注入離子Impurity雜質(zhì)Impurityscattering雜志散射Incrementalresistance電阻增量(微分電阻)In-contactmask接觸式掩模Indiumtinoxide(ITO)銦錫氧化物Inducedchannel感應(yīng)溝道Inf

32、rared紅外的Injection注入Inputoffsetvoltage輸入失調(diào)電壓Insulator絕緣體InsulatedGateFET(IGFET)絕緣柵FETIntegratedinjectionlogic集成注入邏輯Integration集成、積分Interconnection互連Interconnectiontimedelay互連延時(shí)Interdigitatedstructure交互式結(jié)構(gòu)Interface界面Interference干涉Internationalsystemofunions國(guó)際單位制Internallyscattering谷間散射Interpolation內(nèi)插法

33、Intrinsic本征的Intrinsicsemiconductor本征半導(dǎo)體Inverseoperation反向工作Inversion反型Inverter倒相器Ion離子Ionbeam離子束Ionetching離子刻蝕Ionimplantation離子注入Ionization電離Ionizationenergy電離能Irradiation輻照Isolationland隔離島Isotropic各向同性JunctionFET(JFET)結(jié)型場(chǎng)效應(yīng)管Junctionisolation結(jié)隔離Junctionspacing結(jié)間距Junctionsidewall結(jié)側(cè)壁Latchup閉鎖Lateral橫向

34、的Lattice晶格Layout版圖Latticebinding/cell/constant/defect/distortion晶格結(jié)合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸變Leakagecurrent(泄)漏電流Levelshifting電平移動(dòng)Lifetime壽命linearity線性度Linkedbond共價(jià)鍵LiquidNitrogen液氮Liquidphaseepitaxialgrowthtechnique液相外延生長(zhǎng)技術(shù)Lithography光刻LightEmittingDiode(LED)發(fā)光二極管LoadlineorVariable負(fù)載線LocatingandWiring

35、布局布線Longitudinal縱向的Logicswing邏輯擺幅Lorentz洛淪茲Lumpedmodel集總模型Majoritycarrier多數(shù)載流子Mask掩膜板，光刻板Masklevel掩模序號(hào)Maskset掩模組Massactionlaw質(zhì)量守恒定律Master-slaveDflipflop主從D觸發(fā)器Matching匹配Maxwell麥克斯韋Meanfreepath平均自由程Meanderedemitterjunction梳狀發(fā)射極結(jié)Meantimebeforefailure（MTBF）平均工作時(shí)間Megeto-resistance磁阻Mesa臺(tái)面MESFETMetalSemic

36、onductor金屬半導(dǎo)體FETMetallization金屬化Microelectronictechnique微電子技術(shù)Microelectronics微電子學(xué)Millenindices密勒指數(shù)Minoritycarrier少數(shù)載流子Misfit失配Mismatching失配Mobileions可動(dòng)離子Mobility遷移率Module模塊Modulate調(diào)制Molecularcrystal分子晶體MonolithicIC單片ICMOSFET金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管Mos。Transistor（MOST）MOS。晶體管Multiplication倍增Modulator調(diào)制Multichi

37、pIC多芯片ICMulti-chipmodule（MCM）多芯片模塊Multiplicationcoefficient倍增因子Nakedchip未封裝的芯片（裸片）Negativefeedback負(fù)反饋Negativeresistance負(fù)阻Nesting套刻N(yùn)egativetemperaturecoefficient負(fù)溫度系數(shù)Noisemargin噪聲容限Nonequilibrium非平衡Nonrolatile非揮發(fā)（易失）性Normallyoff/on常閉/開Numericalanalysis數(shù)值分析Occupiedband滿帶Officienay功率Offset偏移、失調(diào)Onstandb

38、y待命狀態(tài)Ohmiccontact歐姆接觸Opencircuit開路Operatingpoint工作點(diǎn)Operatingbias工作偏置Operationalamplifier（OPAMP）運(yùn)算放大器Opticalphoton=photon光子Opticalquenching光猝滅Opticaltransition光躍遷Optical-coupledisolator光耦合隔離器Organicsemiconductor有機(jī)半導(dǎo)體Orientation晶向、定向Outline外形Out-of-contactmask非接觸式掩模Outputcharacteristic輸出特性O(shè)utputvoltag

39、eswing輸出電壓擺幅Overcompensation過(guò)補(bǔ)償Overcurrentprotection過(guò)流保護(hù)Overshoot過(guò)沖Overvoltageprotection過(guò)壓保護(hù)Overlap交迭Overload過(guò)載Oscillator振蕩器Oxide氧化物Oxidation氧化Oxidepassivation氧化層鈍化Package封裝Pad壓焊點(diǎn)Parameter參數(shù)Parasiticeffect寄生效應(yīng)Parasiticoscillation寄生振蕩Passination鈍化Passivecomponent無(wú)源元件Passivedevice無(wú)源器件Passivesurface鈍化界

40、面Parasitictransistor寄生晶體管Peak-pointvoltage峰點(diǎn)電壓Peakvoltage峰值電壓Permanent-storagecircuit永久存儲(chǔ)電路Period周期Periodictable周期表Permeable-base可滲透基區(qū)Phase-lockloop鎖相環(huán)Phasedrift相移Phononspectra聲子譜Photoconduction光電導(dǎo)Photodiode光電二極管Photoelectriccell光電池Photoelectriceffect光電效應(yīng)Photoenicdevices光子器件Photolithographicprocess光

41、刻工藝（photo）resist（光敏）抗腐蝕劑Pin管腳Pinchoff夾斷PinningofFermilevel費(fèi)米能級(jí)的釘扎（效應(yīng)）Planarprocess平面工藝Planartransistor平面晶體管Plasma等離子體Plezoelectriceffect壓電效應(yīng)Poissonequation泊松方程Pointcontact點(diǎn)接觸Polarity極性Polycrystal多晶Polymersemiconductor聚合物半導(dǎo)體Poly-silicon多晶硅Potential（電）勢(shì)Potentialbarrier勢(shì)壘Potentialwell勢(shì)阱Powerdissipation

42、功耗Powertransistor功率晶體管Preamplifier前置放大器Primaryflat主平面Principalaxes主軸Print-circuitboard（PCB）印制電路板Probability幾率Probe探針Process工藝Propagationdelay傳輸延時(shí)Pseudopotentialmethod膺勢(shì)發(fā)Punchthrough穿通Pulsetriggering/modulating脈沖觸發(fā)/調(diào)制PulseWidenModulator（PWM）脈沖寬度調(diào)制Punchthrough穿通Pushpullstage推挽級(jí)Qualityfactor品質(zhì)因子Quantiz

43、ation量子化Quantum量子Quantumefficiency量子效應(yīng)Quantummechanics量子力學(xué)Quasi-Fermilevel準(zhǔn)費(fèi)米能級(jí)Quartz石英Radiationconductivity輻射電導(dǎo)率Radiationdamage輻射損傷Radiationfluxdensity輻射通量密度Radiationhardening輻射加固Radiationprotection輻射保護(hù)Radiativerecombination輻照復(fù)合Radioactive放射性Reachthrough穿通Reactivesputteringsource反應(yīng)濺射源Readdiode里德二極管

44、Recombination復(fù)合Recoverydiode恢復(fù)二極管Reciprocallattice倒核子Recoverytime恢復(fù)時(shí)間Rectifier整流器（管）Rectifyingcontact整流接觸Reference基準(zhǔn)點(diǎn)基準(zhǔn)參考點(diǎn)Refractiveindex折射率Register寄存器Registration對(duì)準(zhǔn)Regulate控制調(diào)整Relaxationlifetime馳豫時(shí)間Reliability可靠性Resonance諧振Resistance電阻Resistor電阻器Resistivity電阻率Regulator穩(wěn)壓管（器）Relaxation馳豫Resonantfreq

45、uency共射頻率Responsetime響應(yīng)時(shí)間Reverse反向的Reversebias反向偏置Samplingcircuit取樣電路Sapphire藍(lán)寶石(A12O3)Satellitevalley衛(wèi)星谷Saturatedcurrentrange電流飽和區(qū)Saturationregion飽和區(qū)Saturation飽和的Scaleddown按比例縮小Scattering散射Schockleydiode肖克萊二極管Schottky肖特基Schottkybarrier肖特基勢(shì)壘Schottkycontact肖特基接觸Schrodingen薛定厄Scribinggrid劃片格Secondaryf

46、lat次平面Seedcrystal籽晶Segregation分凝Selectivity選擇性Selfaligned自對(duì)準(zhǔn)的Selfdiffusion自擴(kuò)散Semiconductor半導(dǎo)體Semiconductorcontrolledrectifier可控硅Sendsitivity靈敏度Serial串行/串聯(lián)Seriesinductance串聯(lián)電感Settletime建立時(shí)間Sheetresistance薄層電阻Shield屏蔽Shortcircuit短路Shotnoise散粒噪聲Shunt分流Sidewallcapacitance邊墻電容Signal信號(hào)Silicaglass石英玻璃Silic

47、on硅Siliconcarbide碳化硅Silicondioxide(SiO2)二氧化硅SiliconNitride(Si3N4)氮化硅SiliconOnInsulator絕緣硅Siliverwhiskers銀須Simplecubic簡(jiǎn)立方Singlecrystal單晶Sink沉Skineffect趨膚效應(yīng)Snaptime急變時(shí)間Sneakpath潛行通路Sulethreshold亞閾的Solarbattery/cell太陽(yáng)能電池Solidcircuit固體電路SolidSolubility固溶度Sonband子帶Source源極Sourcefollower源隨器Spacecharge空間電荷

48、Specificheat(PT)熱Speed-powerproduct速度功耗乘積Spherical球面的Spin自旋Split分裂Spontaneousemission自發(fā)發(fā)射Spreadingresistance擴(kuò)展電阻Sputter濺射Stackingfault層錯(cuò)Staticcharacteristic靜態(tài)特性Stimulatedemission受激發(fā)射Stimulatedrecombination受激復(fù)合Storagetime存儲(chǔ)時(shí)間Stress應(yīng)力Straggle偏差Sublimation升華Substrate襯底Substitutional替位式的Superlattice超晶格S

49、upply電源Surface表面Surgecapacity浪涌能力Subscript下標(biāo)Switchingtime開關(guān)時(shí)間Switch開關(guān)Tailing擴(kuò)展Terminal終端Tensor張量Tensorial張量的Thermalactivation熱激發(fā)Thermalconductivity熱導(dǎo)率Thermalequilibrium熱平衡ThermalOxidation熱氧化Thermalresistance熱阻Thermalsink熱沉Thermalvelocity熱運(yùn)動(dòng)Thermoelectricpovoer溫差電動(dòng)勢(shì)率Thick-filmtechnique厚膜技術(shù)Thin-filmhy

50、bridIC薄膜混合集成電路ThinFilmTransistor（TFT）薄膜晶體Threshlod閾值Thyistor晶閘管Transconductance跨導(dǎo)Transfercharacteristic轉(zhuǎn)移特性Transferelectron轉(zhuǎn)移電子Transferfunction傳輸函數(shù)Transient瞬態(tài)的Transistoraging（stress）晶體管老化Transittime渡越時(shí)間Transition躍遷Transition-metalsilica過(guò)度金屬硅化物Transitionprobability躍遷幾率Transitionregion過(guò)渡區(qū)Transport輸運(yùn)Tr

51、ansverse橫向的Trap陷阱Trapping俘獲Trappedcharge陷阱電荷Trianglegenerator三角波發(fā)生器Triboelectricity摩擦電Trigger觸發(fā)Trim調(diào)配調(diào)整Triplediffusion三重?cái)U(kuò)散Truthtable真值表Tolerahce容差Tunnel（ing）隧道（穿）Tunnelcurrent隧道電流Turnover轉(zhuǎn)折Turnofftime關(guān)斷時(shí)間Ultraviolet紫外的Unijunction單結(jié)的Unipolar單極的Unitcell原（元）胞Unitygainfrequency單位增益頻率Unilateralswitch單向開關(guān)

52、Vacancy空位Vacuum真空Valence（value）band價(jià)帶Valuebandedge價(jià)帶頂Valencebond價(jià)鍵Vapourphase汽相Varactor變?nèi)莨躒aristor變阻器Vibration振動(dòng)Voltage電壓Wafer晶片Waveequation波動(dòng)方程Waveguide波導(dǎo)Wavenumber波數(shù)Wave-particleduality波粒二相性Wear-out燒毀Wirerouting布線Workfunction功函數(shù)Worst-casedevice最壞情況器件Yield成品率Zenerbreakdown齊納擊穿Zonemelting區(qū)熔法AS：AbnormalTailSensitivity線尾靈敏度異常AT：AbnormalTailThreshold線的閥值異常Bnd：Bond鍵合B/H：BondHead焊頭BBOS:BondBallOnStitchBFM:BallFormationMonitor檢測(cè)燒球質(zhì)量BOS：BasicOperationSetup基本操作設(shè)置BPO:BondPadOpeningPad尺寸BPP：BondPadPitch焊點(diǎn)之間的距離BQM：BondQualityMonitor