微電子專用詞匯

1、Abe absorb in集中精力做某事access control list 訪問(wèn)控制表 active attack 主動(dòng)攻擊activeX control ActiveX 控件advanced encryption standard AES,高級(jí) 加密標(biāo)準(zhǔn)algorithm 算法alteration of message 改變消息、 application level attack 應(yīng)用層攻擊 argument 變量asymmetric key cryptography 非對(duì)稱密 鑰加密attribute certificate 屬性證書(shū)authentication 鑒別authority

2、 機(jī)構(gòu)availability 可用性Abrupt junction 突變結(jié)Accelerated testing 加速實(shí)驗(yàn)Acceptor 受主Acceptor atom 受主原子Accumulation 積累、堆積Accumulating contact 積累接觸Accumulation region 積累區(qū)Accumulation layer 積累層Active region 有源區(qū)Active component 有源元Active device有源器件Activation 激活A(yù)ctivation energy 激活能Active region有源(放大)區(qū)Admittance 導(dǎo)納

3、Allowed band 允帶Alloy-junction device 合金結(jié)器件 Aluminum(Aluminium)鋁Aluminum - oxide 鋁氧化物Aluminum passivation 鋁鈍化Ambipolar雙極的Ambient temperature 環(huán)境溫度Amorphous無(wú)定形的，非晶體的Amplifier功放擴(kuò)音器放大器Analogue(Analog) comparator 模擬比較 器Angstrom 埃Anneal退火Anisotropic各向異性的Anode陽(yáng)極Arsenic (AS)砷Auger俄歇Auger process俄歇過(guò)程Avalanche

4、 雪崩Avalanche breakdown 雪崩擊穿Avalanche excitation 雪崩激發(fā)Bbrute-force attack 強(qiáng)力攻擊Background carrier 本底載流子Background doping 本底摻雜Backward 反向Backward bias 反向偏置Ballasting resistor 整流電阻Ball bond球形鍵合Band能帶Band gap能帶間隙Barrier 勢(shì)壘Barrier layer 勢(shì)壘層Barrier width勢(shì)壘寬度Base基極Base contact 基區(qū)接觸Base stretching 基區(qū)擴(kuò)展效應(yīng)Base

5、transit time基區(qū)渡越時(shí)間Base transport efficiency 基區(qū)輸運(yùn)系 數(shù)Base-width modulation 基區(qū)寬度調(diào)制Basis vector 基矢Bias偏置Bilateral switch 雙向開(kāi)關(guān)Binary code 二進(jìn)制代碼Binary compound semiconductor 二元化 合物半導(dǎo)體Bipolar 雙極性的Bipolar Junction Transistor (BJT)雙極晶體管Bloch布洛赫Blocking band阻擋能帶Blocking contact 阻擋接觸Body - centered 體心立方Body-ce

6、ntred cubic structure 體立心結(jié) 構(gòu)Boltzmann 波爾茲曼Bond鍵、鍵合Bonding electron 價(jià)電子Bonding pad 鍵合點(diǎn)Bootstrap circuit 自舉電路Bootstrapped emitter follower 自舉射極跟隨器Boron 硼B(yǎng)orosilicate glass 硼硅玻璃Boundary condition 邊界條件Bound electron 束縛電子Breadboard模擬板、實(shí)驗(yàn)板Break down 擊穿Break over 轉(zhuǎn)折Brillouin布里淵Brillouin zone 布里淵區(qū)Built-in內(nèi)建

7、的Build-in electric field 內(nèi)建電場(chǎng)Bulk體/體內(nèi)Bulk absorption 體吸收Bulk generation 體產(chǎn)生Bulk recombination 體復(fù)合Burn - in 老化Burn out 燒毀Buried channel 埋溝Buried diffusion region 隱埋擴(kuò)散區(qū)CCaesar cipher凱撒加密法capacitance 電容capturecategorize 分類chaining mode鏈接模式challenge 質(zhì)詢cipher feedback 加密反饋collision 沖突combine 集成compatibil

8、ity n.計(jì)兼容性component 原件confidentiality 保密性constraint 約束corresponding to 相應(yīng)的Cryptography 密碼學(xué)Can 外殼 Capacitance 電容 Capture cross section 俘獲截面Capture carrier 俘獲載流子Carrier載流子、載波Carry bit進(jìn)位位Carry-in bit進(jìn)位輸入Carry-out bit進(jìn)位輸出Cascade 級(jí)聯(lián)Case官冗Cathode 陰極Center 中心Ceramic陶瓷(的)Channel 溝道Channel breakdown 溝道擊穿Chan

9、nel current 溝道電流Channel doping 溝道摻雜Channel shortening 溝道縮短Channel width溝道寬度Characteristic impedance 特征阻抗Charge電荷、充電Charge-compensation effects 電荷補(bǔ)償 效應(yīng)Charge conservation 電荷守恒Charge neutrality condition 電中性條 件Chargedrive/exchange/sharing/transfer/stor age電荷驅(qū)動(dòng)/交換/共享/轉(zhuǎn)移/ 存儲(chǔ)Chemmical etching 化學(xué)腐蝕法Chemic

10、ally-Polish 化學(xué)拋光Chemmically-Mechanically Polish (CMP) 化學(xué)機(jī)械拋光Chip芯片Chip yield芯片成品率Clamped 箝位Clamping diode 箝位二極管Cleavage plane 解理面Clock rate時(shí)鐘頻率Clock generator時(shí)鐘發(fā)生器Clock flip-flop時(shí)鐘觸發(fā)器Close-packed structure 密堆積結(jié)構(gòu)Close-loop gain 閉環(huán)增益Collector集電極Collision 碰撞Compensated OP-AMP 補(bǔ)償運(yùn)放Common-base/collector/

11、emitter connection共基極/集電極/發(fā)射極 連接Common-gate/drain/source connection 共柵/漏/源連接Common-mode gain 共模增益Common-mode input 共模輸入Common-mode rejection ratio (CMRR) 共 模抑制比Compatibility 兼容性Compensation 補(bǔ)償Compensated impurities 補(bǔ)償雜質(zhì)Compensated semiconductor 補(bǔ)償半導(dǎo)體 Complementary Darlington circuit 互補(bǔ) 達(dá)林頓電路Compleme

12、ntaryMetal-Oxide-Semiconductor Field-Effect-Transistor(CMOS) 互補(bǔ)金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管 Complementary error function 余誤差函 數(shù)Compound Semiconductor 化合物半導(dǎo)體 Conductance 電導(dǎo)Conduction band (edge) 導(dǎo)帶 (底) Conduction level/state 導(dǎo)帶態(tài) Conductor 導(dǎo)體Conductivity 電導(dǎo)率Configuration 組態(tài)Conlomb 庫(kù)侖Conpled Configuration Devices 結(jié)構(gòu)

13、組 態(tài)Constants物理常數(shù)Constant energy surface 等能面 Constant-source diffusion 恒定源擴(kuò)散 Contact 接觸 Contamination 治污 Continuity equation 連續(xù)性方程 Contact hole 接觸孔Contact potential 接觸電勢(shì)Continuity condition 連續(xù)性條件 Contra doping 反摻雜Controlled 受控的Converter轉(zhuǎn)換器Conveyer傳輸器Copper interconnection system 銅互連 系統(tǒng)Couping 耦合Coval

14、ent共階的Crossover 跨交Critical臨界的Crossunder 穿交Crucible 土甘堝Crystaldefect/face/orientation/lattice晶體缺陷/晶面/晶向/晶格Current density 電流密度Curvature 曲率Cut off截止Current drift/dirve/sharing電流漂移/驅(qū)動(dòng)/共享Current Sense電流取樣Curvature 彎曲Custom integrated circuit 定制集成電路Cylindrical柱面的Czochralshicrystal 直立單晶Czochralski techniq

15、ue切克勞斯基技術(shù)(Cz法直拉晶體J)Ddedicate專用的，單一的denial of service(DOS)拒絕服務(wù)攻擊diffusion 擴(kuò)散digital signature algorithm數(shù)字簽名算法dynamic動(dòng)態(tài)的Dangling bonds 懸掛鍵Dark current 暗電流Dead time空載時(shí)間Debye length德拜長(zhǎng)度De.broglie德布洛意Decderate 減速Decibel (dB)分貝Decode譯碼Deep acceptor level 深受主能級(jí)Deep donor level深施主能級(jí)Deep impurity level深度雜質(zhì)能級(jí)

16、Deep trap深陷阱Defeat 缺陷Degenerate semiconductor 簡(jiǎn)并半導(dǎo)體Degeneracy 簡(jiǎn)并度Degradation 退化Degree Celsius(centigrade) /Kelvin攝氏/開(kāi)氏溫度Delay延遲Density 密度Density of states 態(tài)密度Depletion 耗盡Depletion approximation 耗盡近似Depletion contact 耗盡接觸Depletion depth 耗盡深度Depletion effect 耗盡效應(yīng)Depletion layer 耗盡層Depletion MOS 耗盡 MOS

17、Depletion region 耗盡區(qū)Deposited film 淀積薄膜Deposition process 淀積工藝Design rules設(shè)計(jì)規(guī)則Die芯片(復(fù)數(shù)dice)Diode二極管Dielectric 介電的Dielectric isolation 介質(zhì)隔離Difference-mode input 差模輸入Differential amplifier 差分放大器Differential capacitance 微分電容Diffused junction 擴(kuò)散結(jié)Diffusion 擴(kuò)散Diffusion coefficient 擴(kuò)散系數(shù)Diffusion constant 擴(kuò)

18、散常數(shù)Diffusivity 擴(kuò)散率Diffusioncapacitance/barrier/current/furnace擴(kuò)散電容/勢(shì)壘/電流/爐Digital circuit 數(shù)字電路Dipole domain 偶極疇Dipole layer 偶極層Direct-coupling 直接耦合Direct-gap semiconductor 直接帶隙半導(dǎo)體Direct transition 直接躍遷Discharge 放電Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布電容istribu

19、ted model 分布模型Displacement 位移Dislocation 位錯(cuò)Domain 疇Donor施主Donor exhaustion 施主耗盡Dopant摻雜劑Doped semiconductor 摻雜半導(dǎo)體 oping concentration 摻雜濃度 Double-diffusive MOS(DMOS)雙擴(kuò)散 MOS. Drift 漂移Drift field漂移電場(chǎng)Drift mobility 遷移率Dry etching干法腐蝕Dry/wet oxidation 干 / 濕法氧化Dose劑量Duty cycle工作周期Dual-in-line package ( D

20、IP)雙列直 插式封裝Dynamics 動(dòng)態(tài)Dynamic characteristics 動(dòng)態(tài)屬性Dynamic impedance 動(dòng)態(tài)阻抗Eexpertise 專長(zhǎng) extractorEarly effect厄利效應(yīng)Early failure早期失效Effective mass 有效質(zhì)量Einstein relation(ship)愛(ài)因斯坦關(guān)系 Electric Erase Programmable Read Only Memory(E2PROM) 一次性電可擦除只讀存 儲(chǔ)器Electrode 電極Electrominggratim 電遷移Electron affinity 電子親和勢(shì)

21、Electronic -grade 電子能 Electron-beam photo-resist exposure 光致抗蝕劑的電子束曝光Electron gas 電子氣Electron-grade water 電子級(jí)純水Electron trapping center 電子俘獲中心Electron Volt (eV)電子伏 Electrostatic 靜電的Element元素/元件/配件Elemental semiconductor 元素半導(dǎo)體Ellipse 橢圓Ellipsoid 橢球Emitter發(fā)射極Emitter-coupled logic發(fā)射極耦合邏輯 Emitter-couple

22、d pair 發(fā)射極耦合對(duì) Emitter follower 射隨器Empty band 空帶Emitter crowding effect 發(fā)射極集邊（擁擠）效應(yīng)Endurance test =life test 壽命測(cè)試 Energy state 能態(tài)Energy momentum diagram 能量-動(dòng)量 （E-K）圖 Enhancement mode 增強(qiáng)型模式 Enhancement MOS 增強(qiáng)性MOS Entefic （低）共溶的 Environmental test 環(huán)境測(cè)試 Epitaxial外延的Epitaxial layer 夕卜延層Epitaxial slice 夕卜

23、延片 Expitaxy 外延Equivalent curcuit 等效電路 Equilibrium majority /minority carriers平衡多數(shù)/少數(shù)載流子Erasable Programmable ROM （EPROM） 可搽?。ň幊蹋┐鎯?chǔ)器Error function complement 余誤差函數(shù) Etch刻蝕Etchant刻蝕劑Etching mask抗蝕劑掩模Excess carrier 過(guò)乘。載流子Excitation energy 激發(fā)能 Excited state 激發(fā)態(tài)Exciton 激子Extrapolation 夕卜推法Extrinsic非本征的Ext

24、rinsic semiconductor 雜質(zhì)半導(dǎo)體 Ffabrication 偽造 fleshed outFace - centered 面心立方Fall time下降時(shí)間Fan-in扇入Fan-out 扇出Fast recovery 快恢復(fù)Fast surface states 快界面態(tài)Feedback 反饋Fermi level費(fèi)米能級(jí)Fermi-Dirac Distribution 費(fèi)米-狄拉克布Femi potential 費(fèi)米勢(shì)Fick equation菲克方程(擴(kuò)散)Field effect transistor 場(chǎng)效應(yīng)晶體管Field oxide場(chǎng)氧化層Filled band

25、滿帶Film薄膜Flash memory閃爍存儲(chǔ)器Flat band 平帶Flat pack扁平封裝Flicker noise閃爍(變)噪聲Flip-flop toggle觸發(fā)器翻轉(zhuǎn)Floating gate 浮柵Fluoride etch氟化氫刻蝕Forbidden band 禁帶Forward bias正向偏置Forward blocking /conducting正向阻斷/導(dǎo)通Frequency deviation noise頻率漂移噪聲Frequency response 頻率響應(yīng)Function 函數(shù)GgridGain增益Gallium-Arsenide(GaAs)砷化鉀Gamy r

26、ay r 射線Gate門、柵、控制極Gate oxide 柵氧化層Gauss ( ian)高斯Gaussian distribution profile 高斯摻雜分布Generation-recombination 產(chǎn)生-復(fù)合Geometries 幾何尺寸Germanium(Ge)錯(cuò)Graded緩變的Graded (gradual) channel 緩變溝道Graded junction 緩變結(jié)Grain晶粒Gradient 梯度Grown junction 生長(zhǎng)結(jié)Guard ring 保護(hù)環(huán)Gummel-Poom model 葛謀-潘模型Gunn - effect狄氏效應(yīng)Hhandle處理h

27、ierarchical 層次Hardened device輻射加固器件Heat of formation 形成熱Heat sink散熱器、熱沉Heavy/light hole band 重/輕空穴帶Heavy saturation 重?fù)诫sHell - effect霍爾效應(yīng)Heterojunction 異質(zhì)結(jié)Heterojunction structure 異質(zhì)結(jié)結(jié)構(gòu)Heterojunction Bipolar Transistor(HBT)異質(zhì)結(jié)雙極型晶體High field property 高場(chǎng)特性 High-performance MOS.(H-MOS) 高性能 MOS.Hormaliz

28、ed 歸一化Horizontal epitaxial reactor 臥式外延反應(yīng)器Hot carrior 熱載流子Hybrid integration 混合集成Iimplementinductance 電感initialization vectorIV 初始化向量integrity完整性interception 截獲interruption 中斷Image - force 鏡象力Impact ionization 碰撞電離Impedance 阻抗Imperfect structure 不完整結(jié)構(gòu)Implantation dose 注入劑量Implanted ion注入離子Impurity 雜

29、質(zhì)Impurity scattering 雜志散射Incremental resistance電阻增量(微分電阻)In-contact mask 接觸式掩模Indium tin oxide (ITO)銦錫氧化物Induced channel 感應(yīng)溝道Infrared紅外的Injection 注入Input offset voltage輸入失調(diào)電壓Insulator絕緣體Insulated Gate FET(IGFET)絕緣柵FET Integrated injection logic 集成注入邏輯Integration集成、積分Interconnection 互連Interconnection

30、 time delay 互連延時(shí)Interdigitated structure 交互式結(jié)構(gòu)Interface 界面Interference 干涉International system of unions 國(guó)際單位制Internally scattering 谷間散射Interpolation 內(nèi)插法Intrinsic 本征的Intrinsic semiconductor 本征半導(dǎo)體Inverse operation 反向工作Inversion 反型Inverter倒相器Ion離子Ion beam離子束Ion etching離子刻蝕Ion implantation 離子注入Ionizatio

31、n 電離Ionization energy 電離能Irradiation 輻照Isolation land 隔離島Isotropic各向同性Jjava applet Java 小程序Junction FET(JFET)結(jié)型場(chǎng)效應(yīng)管Junction isolation 結(jié)隔離Junction spacing 結(jié)間距Junction side-wall 結(jié)側(cè)壁Kkey wrapping 密鑰包裝LLatch up 閉鎖Lateral橫向的Lattice 晶格Layout版圖Latticebinding/cell/constant/defect/distort ion晶格結(jié)合力/晶胞/晶格/晶格 常

32、熟/晶格缺陷/晶格畸變Leakage current (泄)漏電流Level shifting 電平移動(dòng)Life time 壽命linearity線性度Linked bond 共價(jià)鍵Liquid Nitrogen 液氮Liquid phase epitaxial growthtechnique液相外延生長(zhǎng)技術(shù)Lithography 光刻Light Emitting Diode(LED)發(fā)光二極管Load line or Variable 負(fù)載線Locating and Wiring 布局布線Longitudinal 縱向的Logic swing邏輯擺幅Lorentz洛淪茲Lumped mode

33、l集總模型Mmasquerade 偽裝message digest 消息摘要modification 修改multidrop多站，多支路Majority carrier多數(shù)載流子Mask掩膜板，光刻板Mask level掩模序號(hào)Mask set掩模組Mass - action law質(zhì)量守恒定律Master-slave D flip-flop主從D觸發(fā)器Matching 匹配Maxwell麥克斯韋Mean free path平均自由程Meandered emitter junction梳狀發(fā)射極結(jié)Mean time before failure(MTBF)平均工作時(shí)間Megeto - resi

34、stance 磁阻Mesa臺(tái)面MESFET-Metal Semiconductor 金屬半導(dǎo)體FETMetallization 金屬化Microelectronic technique 微電子技術(shù)Microelectronics 微電子學(xué)Millen indices 密勒指數(shù)Minority carrier 少數(shù)載流子Misfit失配Mismatching 失配己Mobile ions可動(dòng)離子Mobility遷移率Module模塊Modulate 調(diào)制Molecular crystal 分子晶體Monolithic IC 單片 ICMOSFET金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管Mos. Transi

35、stor(MOST )MOS.晶體管Multiplication 倍增Modulator 調(diào)制Multi-chip IC 多芯片 ICMulti-chip module(MCM)多芯片模塊Multiplication coefficient 倍增因子Nnetwork level attack 網(wǎng)絡(luò)層攻擊 non-repudiation 不可抵賴Naked chip未封裝的芯片(裸片)Negative feedback 負(fù)反饋Negative resistance 負(fù)阻Nesting 套刻N(yùn)egative-temperature-coefficient 負(fù) 溫度系數(shù)Noise margin噪聲容

36、限Nonequilibrium 非平衡Nonrolatile 非揮發(fā)(易失)性 Normally off/on 常閉 / 開(kāi) Numerical analysis 數(shù)值分析Ooptimize使最優(yōu)化Occupied band 滿帶Officienay 功率Offset偏移、失調(diào)On standby待命狀態(tài)Ohmic contact歐姆接觸Open circuit 開(kāi)路Operating point 工作點(diǎn)Operating bias 工作偏置Operational amplifier (OPAMP)運(yùn)算放 大器Optical photon =photon 光子Optical quenching

37、 光猝滅Optical transition 光躍遷Optical-coupled isolator 光耦合隔離 器Organic semiconductor 有機(jī)半導(dǎo)體Orientation晶向、定向Outline 外形Out-of-contact mask非接觸式掩模Output characteristic 輸出特性O(shè)utput voltage swing輸出電壓擺幅Overcompensation 過(guò)補(bǔ)償Over-current protection 過(guò)流保護(hù)Over shoot 過(guò)沖Over-voltage protection 過(guò)壓保護(hù)Overlap 交迭Overload 過(guò)載Os

38、cillator 振蕩器Oxide氧化物Oxidation 氧化Oxide passivation 氧化層鈍化Pparallelparasitic寄生的partition 簡(jiǎn)明英漢詞典n.分割，劃分, 瓜分，分開(kāi)，隔離物vt.區(qū)分，隔開(kāi)，分 割presentation n.介紹，陳述，贈(zèng)送，表 達(dá)primitiveprivateprobablyproceedingprofoundpropertypseudocollision 偽沖突Package 封裝Pad壓焊點(diǎn)Parameter 參數(shù)Parasitic effect 寄生效應(yīng)Parasitic oscillation 寄生振蕩Passina

39、tion 鈍化Passive component 無(wú)源元件Passive device 無(wú)源器件Passive surface 鈍化界面Parasitic transistor 寄生晶體管 Peak-point voltage 峰點(diǎn)電壓 Peak voltage峰值電壓Permanent-storage circuit 永久存儲(chǔ)電 路Period周期Periodic table 周期表Permeable - base可滲透基區(qū)Phase-lock loop 鎖相環(huán)Phase drift 相移Phonon spectra 聲子譜Photo conduction 光電導(dǎo)Photo diode光電二

40、極管Photoelectric cell 光電池Photoelectric effect 光電效應(yīng) Photoenic devices 光子器件 Photolithographic process 光刻工藝 （photo） resist （光敏）抗腐蝕劑 Pin管腳Pinch off 夾斷Pinning of Fermi level費(fèi)米能級(jí)的釘扎 （效應(yīng)）Planar process 平面工藝Planar transistor 平面晶體管Plasma等離子體Plezoelectric effect 壓電效應(yīng) Poisson equation 泊松方程 Point contact 點(diǎn)接觸Pola

41、rity 極性Polycrystal 多晶Polymer semiconductor 聚合物半導(dǎo)體 Poly-silicon 多晶硅Potential （電）勢(shì) Potential barrier 勢(shì)壘Potential well 勢(shì)阱Power dissipation 功耗Power transistor 功率晶體管 Preamplifier前置放大器 Primary flat 主平面Principal axes 主軸Print-circuit board(PCB)印制電路板Probability 幾率Probe探針Process 工藝Propagation delay 傳輸延時(shí)Pseudo

42、potential method 膺勢(shì)發(fā)Punch through 穿通Pulse triggering/modulating 脈沖觸發(fā)/調(diào)制Pulse Widen Modulator(PWM)脈沖寬度調(diào) 制Punchthrough 穿通Push-pull stage 推挽級(jí)QQuality factor 品質(zhì)因子Quantization 量子化Quantum 量子Quantum efficiency 量子效應(yīng)Quantum mechanics 量子力學(xué)Quasi - Fermi level 準(zhǔn)費(fèi)米能級(jí)Quartz石英Rrelease of message contents 發(fā)布消息、內(nèi)容re

43、gister寄存器registration注冊(cè)，報(bào)到，登記resistance 電阻routingrunning key cipher 運(yùn)動(dòng)密鑰加密法Radiation conductivity 輻射電導(dǎo)率Radiation damage 輻射損傷Radiation flux density 輻射通量密度Radiation hardening 輻射加固Radiation protection 輻射保護(hù)Radiative - recombination 輻照復(fù)合Radioactive 放射性Reach through 穿通Reactive sputtering source 反應(yīng)濺射源Read

44、diode里德二極管Recombination 復(fù)合Recovery diode 恢復(fù)二極管Reciprocal lattice 倒核子Recovery time恢復(fù)時(shí)間Rectifier整流器(管)Rectifying contact 整流接觸Reference基準(zhǔn)點(diǎn)基準(zhǔn)參考點(diǎn)Refractive index 折射率Register寄存器Registration 對(duì)準(zhǔn)Regulate控制調(diào)整Relaxation lifetime 馳豫時(shí)間Reliability 可*性Resonance 諧振Resistance 電阻Resistor電阻器Resistivity 電阻率Regulator穩(wěn)壓管

45、（器）Relaxation 馳豫Resonant frequency 共射頻率Response time 響應(yīng)時(shí)間Reverse反向的Reverse bias反向偏置S scratchscratchpad 緩存secret密鑰substrate 襯底synchronizesynthesizesymmetric key cryptography 對(duì)稱密鑰加密sophisticate 復(fù)雜的suspend懸掛，延緩Sampling circuit 取樣電路Sapphire 藍(lán)寶石（Al2O3）Satellite valley 衛(wèi)星谷Saturated current range 電流飽和區(qū)Satu

46、ration region 飽和區(qū)Saturation 飽和的Scaled down按比例縮小Scattering 散射Schockley diode肖克萊二極管Schottky肖特基Schottky barrier肖特基勢(shì)壘Schottky contact 肖特基接觸Schrodingen 薛定厄Scribing grid 劃片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 選擇性Self aligned自對(duì)準(zhǔn)的Self diffusion 自擴(kuò)散Semiconductor 半導(dǎo)體Semiconductor-contro

47、lled rectifier可控硅Sendsitivity 靈敏度Serial串行/串聯(lián)Series inductance 串聯(lián)電感Settle time建立時(shí)間Sheet resistance 薄層電阻Shield屏蔽Short circuit 短路Shot noise散粒噪聲Shunt分流Sidewall capacitance 邊墻電容Signal信號(hào)Silica glass石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2)二氧化硅Silicon Nitride(Si3N4)氮化硅Silicon On Insulator 絕緣硅S

48、iliver whiskers 銀須Simple cubic 簡(jiǎn)立方Single crystal 單晶Sink 沉Skin effect趨膚效應(yīng)Snap time急變時(shí)間Sneak path潛行通路Sulethreshold 亞閾的Solar battery/cell 太陽(yáng)能電池Solid circuit固體電路Solid Solubility 固溶度Sonband 子帶Source源極Source follower 源隨器Space charge空間電荷Specific heat(PT)熱Speed-power product速度功耗乘積Spherical球面的Spin自旋Split分裂Spontaneous emission 自發(fā)發(fā)身寸Spreading resistance 擴(kuò)展電阻Sputter 濺射St