低功耗霍爾元件DH471

FeaturesMicropowerconsumptionforbatterypoweredapplicationsOmnipolar,outputswitcheswithabsolutevalueofNorthorSouthpolefrommagnetOperationdownto2.5VHighsensitivityfordirectreedswitchreplacementapplicationsCMOSoutputChopperstabilizedamplifierstage2．DescriptionTheDH471OmnipolarHalleffectsensorICisfabricatedfrommixedsignalCMOStechnology.Itincorporatesadvancedchopper-stabilizationtechniquestoprovideaccurateandstablemagneticswitchpoints.ThecircuitdesignprovidesaninternallycontrolledclockingmechanismtocyclepowertotheHallelementandanalogsignalprocessingcircuits.Thisservestoplacethehighcurrent-consumingportionsofthecircuitintoa“Sleep”mode.Periodicallythedeviceis“Awakened”bythisinternallogicandthemagneticfluxfromtheHallelementisevaluatedagainstthepredefinedthresholds.IfthefluxdensityisaboveorbelowtheBop/Brpthresholdsthentheoutputtransistorisdriventochangestatesaccordingly.Whileinthe“Sleep”cycletheoutputtransistorislatchedinitspreviousstate.Thedesignhasbeenoptimizedforserviceinapplicationsrequiringextendedoperatinglifetimeinbatterypoweredsystems.TheoutputtransistoroftheDH471willbelatchedon(Bop)inthepresenceofasufficientlystrongSouthorNorthmagneticfieldfacingthemarkedsideofthepackage.Theoutputwillbelatchedoff(Brp)intheabsenceofamagneticfield.3．ApplicationsSolidstateswitchHandheldWirelessHandsetAwakeSwitchLidclosesensorforbatterypowereddevices

Magnetproximitysensorforreedswitchreplacementinlowdutycycleapplications4．TypicalApplicationCircuitInnosen'spole-independentsensingtechniqueallowsforoperationwitheitheranorthpoleorsouthpolemagnetorientation,enhancingthemanufacturabilityofthedevice.Thestate-of-the-arttechnologyprovidesthesameoutputpolarityforeitherpoleface.Itisstronglyrecommendedthatanexternalbypasscapacitorbeconnected(incloseproximitytotheHallsensor)betweenthesupplyandgroundofthedevicetoreducebothexternalnoiseandnoisegeneratedbythechopper-stabilizationtechnique.Thisisespeciallytrueduetotherelativelyhighimpedanceofbatterysupplies.<JOUTParasiticdiodeVDD0-<sleep/awakelogicchopper5．FunctionalBlockDiagram<JOUTParasiticdiodeVDD0-<sleep/awakelogicchopper6．PinningMarkView

PinDescription7．InternalTimingCircuitNAMENOSTATUSDESCRIPTIONVdd1PPowerSupplyOutPinDescription7．InternalTimingCircuitNAMENOSTATUSDESCRIPTIONVdd1PPowerSupplyOut2OoutputGnd3PICGroundCurrentOutputLatchedJ1IawPeriodAwakeTaw:120個SleepTsl:70msTime8．AbsoluteMaximumRatingsParameterSymbolValueUnitsSupplyWltage(operating)VDD6VSupplyCurrentIDD5mAOutputWltageVOUT6VOutputCurent【OUT5mAOperatingTemperatureRangeTa-40to85。CStorageTemperatureRangTs-50to150。CESDSensitivity-4000VExceedingtheabsolutemaximumratingsmaycausepermanentdamage.Exposuretoabsolute-maximumratedconditionsforextendedperiodsmayaffectdevicereliability.9．DCElectricalCharacteristicsDCOperatingParameters:TA=25C,VDD=2.75V.

ParameterSymbolTestConditions|MinTypMaxUnitsOperatingvoltageVDDOperating2.535.5VSupplycurrentIDDAverage5卩AOutputCurrent【OUT1.0mASaturationVoltageVvSATIOUT=1mA0.4VAwakemodetimeTAWOperating175jiSSleepmodetimeT丄STOperating70mS10．MagneticCharacteristics3.02.52.01.51.00.5MagneticFlux(Gauss)OFF B3.02.52.01.51.00.5MagneticFlux(Gauss)OFF BOPN…；f,BrPS……「BopsBRPNON40OperatingParameters:TA=25C,VDD=2.75VDC.PARAMETERSymbolMinTypeMaxUnitsOperatingPointBop-+/-35+/-60GsReleasePointBrp+/-5+/-27-GsHysteresisBhys-8-Gs11．ESDProtectionHumanBodyModel(HBM)testsaccordingto:Mil.Std.883Fmethod3015.7ParameterSymbolLimitValuesUnitNotesMinMaxESDVoltage VESD 4kV12．PerformanceCharacteristicsTypicalMagneticSwitchpointsversusVdd2.2 2.4 2.6 2.8 3 3.2Vdd{V}TypicftlMagneticSwitchpointsversusTemperature.-1TypicalMagneticSwitchpointsversusVdd2.2 2.4 2.6 2.8 3 3.2Vdd{V}TypicftlMagneticSwitchpointsversusTemperature.-1TyfiicalCurrantConsumption1210versusT^mp&rature,Vdc^3VuopdU-3WUQ<J0OutputSwiteminacn時址怕升汕鶻TyfiicalCurrantConsumption1210versusT^mp&rature,Vdc^3VuopdU-3WUQ<J0OutputSwiteminacn時址怕升汕鶻-40 -20 0 20 40 60SOTemperature(C)13．UniqueFeaturesCMOSHallICTechnologyThechopperstabilizedamplifierusesswitchedcapacitortechniquestoeliminatetheamplifieroffsetvoltage,which,inbipolardevices,isamajorsourceoftemperaturesensitivedrift.CMOSmakesthisadvancedtechniquepossible.TheCMOSchipisalsomuchsmallerthanabipolarchip,allowingverysophisticatedcircuitrytobeplacedinlessspace.Thesmallchipsizealsocontributestolowerphysicalstressandlesspowerconsumption.InstallationCommentsConsidertemperaturecoefficientsofHallICandmagnetics,aswellasairgapandlifetimevariations.Observetemperaturelimitsduringwavesoldering.TypicalIRsolder-reflowprofile:NoRapidHeatingandCooling.RecommendedPreheatingformax.2minutesat150°C14．ESDPrecautionsElectronicsemiconductorproductsaresensitivetoElectroStaticDischarge(ESD).AlwaysobserveElectroStaticDischargecontrolprocedureswheneverhandlingsemiconductorproducts.

15．PackageInformationTSOT-23PackagePhysicalCharacteristicsTopView3:471mm1.602-651.70TopView3:471mm1.602-651.702-95.PINOUT: Pin1VDDPin2OutputPin3GND.Alldimensionsareinmillimeters;Marking:47--CodeofDevice(DH471);y--last1digitofyear;mm--ProductionLot;SideViewEndView2.82一 3.02(VJ0.351.802.000.503.000.700.803000.000.103.000.300.603.00TSOT-23PackageHallLocationDFN2020-3PackageDimensionDFN2020-3PackageDimensionTO-92PackagePhysicalCharacteristicsNotes:.Controllin