Power-MOS-Process-Flow-E教學(xué)講解課件

PowerMOSprocessflow

(Etchrelated)P.ProcessstagerelativetoEtchbyproducttypeP.1P1MPOWERNMOSFETEPI

(N-/Phosphorusdopant/0.13,0.17&0.2ohm-cm)WaferStart*LASERMARKING*INITIALOXPRE-CLN(HAB)Substrate(N+TYPE/Asdopant/2.2E19cm3)4.0~4.5um52.886um784.681umP.1P1MPOWERNMOSFETInitialOX*INITIALOXIDATION(6KA,followPromosrecipe,1000C)*POSTINITIALOXPLY*INITIALOXTHKMEAS.oxideP.1P1MPOWERNMOSFETACPhoto&ACWETEtchoxide*ACPHOTO(I-Line,CD1.2~3um,monitorCDbarforreference)*ACPHOTODESCUM*INITIALOXWETETCH(BHF)(scribelineox<20A)-ACPRPLASMASTRIP-ACETCHPOSTCLN(SPM/HA)PRP.1P1MPOWERNMOSFETTrenchHMDepoxide*TRENCHTEOSHMDEP.(5KA)*TRENCHTEOSHMANNEAL(ref:850C,15min)(MVIref:LPTEOShardmaskox4~6K)TEOSP.1P1MPOWERNMOSFETTrenchPhoto&HMEtch*TRPHOTOBARLCOATING*TRPHOTO(definestheTrenchareas,DUV,CD200+-20nm)*TRMOETCHoxideTEOSPRP.PatterntypeofTRSquaretypeStriptypeNotchNotchP.TopviewofTRMOwithtiltingangleTRMOCross-sectionTRMOoxideEtchwithSquarepatternP.1P1MPOWERNMOSFETTrenchSiEtch*TRMOPRSTRIP*TRMOETCHPOSTCLN(SPM/HA)*TRSiETCH(1.0~2.4um,SiDepth)*TRETCHPOSTCLN(SPM/HA)(MVIref:SPM+1%HF2min,thenSPM+APM)oxideTEOSSourcePADGatePADP.SquaretypeStriptypePatterntypeofTRNotchNotchP.173nm89o152nm170nm152nm89o161nm89o152nmTRsiliconEtchwithSquarepattern(Target=1.4um)P.TRsiliconEtchwithStrippattern(Target=1.5um)288nm243nm283nm263nm1,543nm258nm89o273nm238nm268nm243nm1,601nm253nm268nm228nm268nm253nm1,622nm248nm89o89oP.1P1MPOWERNMOSFETSACOX&HMRemove*SACOXPRE-CLN(HA/DHF/HAB)*SACOXIDATION(forcornerrounding:followMVIrecipe)1150C/1250A/DryOX*SACOXANDHMOXREMOVE(BHF)*REMAINNATIVEOXTHKMEAS.(scribeline<20A)*REMAININITIALOXTHKMEAS.(etchpad>3200A)oxideP.1P1MPOWERNMOSFETGateOxidationoxide*GATEOXPRE-CLN(HA/DHF/HAB)*GATEOXIDATION200~700A(dependonapplication)(followMVIrecipe,1000Cdry)P.1P1MPOWERNMOSFETDopedPolyDepoxide*DOPEDPOLYDEP.(8000A,Pinsitufollow0.17DRAMCBpolyrecipe)PolyP.1P1MPOWERNMOSFETGCPhoto&EtchoxidePoly*GCPHOTO(2um,monitorCDbarforreference)*GCETCH(RSC<1500A)*GCPRSTRIP*GCETCHPOST-CLN(SPM/DHF)(CHANGECASSETTE)(MVIref:SPM+1%HF,timebaseonGoxthk)*POSTGCETCHREMAINGOXTHKMEAS.(200A)P.PolySiliconGCEtchPolyrecessintrenchPolyThickness~8Kor12KStriptypeSquaretypePolyGatePadGatePadGatePadP.PolyGatePad91nmGCEtchwithSquarepattern(Polyfreeinwafersurface)CutNotchP.1P1MPOWERNMOSFETP-BodyblanketImpoxidePoly*P-BODYIMPLANT(B)(followMVIrecipe)*P-BODYIMPPOSTCLN(SPM/HA)*P-BODYIMPANNEAL(1150C,followMVIrecipe)*ANNEALTHKMEAS.(T/W)(100,700A)*ANNEALOXREMOVE(DHF200:1followPromosrecipe)*REMAINOXTHKMEAS.(200A)P.1P1MPOWERNMOSFETXNPhoto&ImpoxidePoly*XNPHOTO(CD2um)*XNIMPLANT(As)(As/60K/8e15)-XNPRPLASMASTRIP-XNIMPPOSTCLN(SPM/HA)-XNIMPANNEAL(followMVIrecipe,950C110min~30min)-ANNEALTHKMEASURE(T/W)(40Aor500Abyrecipe)PRP.1P1MPOWERNMOSFETILDDepoxidePoly*BARRIERPESiODEP(2kASi-RichOX)*BPSGDEP.(MVIref:11K)*BPSGFLOW(MVIref:900C,N215min)*BPSGETCHBACK(removeBPSG5.7kAbywetsink)*AFTERETCHBSGTHKMEASURE(7300A:2kASi-rich+5.3KABPSG)Si-richoxBPSGP.1P1MPOWERNMOSFETCTPhoto&Etch*CTPHOTO*CTOXETCH*TRCTSiETCH(SiLoss0.3~0.4um)*CTPRSTRIP*CTETCHPOSTCLN(SPM/HA)*CTETCHCDMEAS.oxidePolySi-richoxBPSGvP.PolySiliconContactEtchContactEtchOxideEtchinsiliconareaOxideP-siliconP-bodyimplantPolyGatePadPolyGatePadBPSGGatePadSquareTypeStripTypeGatePadP.CTOxideEtchinEBO520nm524nm480nm421nm560nm187nm314nmCTsiliconEtchinEAACTcontactEtch–OxideandsiliconEtchwithsquarepatternBPSGGatePadCutNotchCellCOCD0.4umP.BPSGGatePadCTsiliconEtchinEAANotchCutCTcontactEtch–OxideandsiliconEtchwithStrippatternP.1P1MPOWERNMOSFETCTImp&Anneal*CTIMPLANT(BF2)(followMVIrecipe)*CTIMPPOSTCLN(SPM/HA)*CTIMPANNEAL(MVIref:RTA1000C,15sec)oxidePolySi-richoxBPSGP.1P1MPOWERNMOSFETCTWPlug&Etchback*TILINERSPUTTERDIP(BHF)*TILINERSPUTTER*TILINERANNEAL*WPLUGDEP.(6KA?)*CHANGEMETALCASSETTE&POD*CTWETCHBACK(dryetch,makesurew/oWresidue)*CTPOSTETCHBAKE(150C,1min)*POSTWETCHBACKSCR-JETCLN(DIW)oxidePolySi-richoxBPSGWEPD,retrofitAMTHARTP.TungstenEtchCTTungstenEtchBackBPSGGatePadTungsten/Ti/TiNTi/TiNGatePadTi/TiNGatePadBPSGGatePadTungsten/Ti/TiNSquareTypeStripTypeP.TungstenEtchback–WetchrecessTi/TiNGatePadBPSGGatePadTungsten/Ti/TiNCutNotchWEtchP.1P1MPOWERNMOSFETM1Dep&Photo&Etch*M1METALSPUTTER(Al/Cu30~40KA)*M1PHOTO(CD5um,Space4um)*M1ETCH*M1ETCHPOSTCLN(ACT)oxidePolySi-richoxBPSGWAl/CuGatePadSourcePADP.Ti/TiNGatePadMetal(Al/CuorAl-Si-Cu)SourcePADGatePADTi/TiNGatePadSourcePADGatePadTi/TiNGatePadSourcePADGatePadTi/TiNGatePadMetal(Al/CuorAl-Si-Cu)Al/Cu(Si)oxideWTi/TiNP-siliconMetalEtch–Al/CuorAl/Si/CuEtchMetalEtchSquareTypeStripTypeP.3,025nmTi/TiNGatePadSourcePADGatePadMetalEtch–Al/CuorAl/Si/CuEtchNotchCutP.1P1MPOWERNMOSFETTVDep&Photo&Etch*TVOXDEP.(1600A,followPromos)

*TVSINDEP.(3700A,followPromos)

*TVPHOTO

*TVETCH

*TVPRSTRIP

*TVETCHPOST-CLN(ACT)

*TVALLOYoxidePolySi-richoxBPSGWAl/CuTVOX/NITN-N+P-