第11-版圖的提取課件

1Extraction

Extractionisamethodofverifyingalayout.Theextractionprocessproducesanetlistthatdescribesthecircuitrepresentedbythelayoutintermsofdeviceandconnectivityinformation.

2

Recognizesactivedevices(BJTs,diodes,GaAsFETs,JFETs,andMOSFETs),passivedevices(capacitors,inductors,andresistors),andnon-standardorcompounddevices(bymeansofsubcircuitrecognition).Maintainsprocessindependencebymeansofanextractdefinitionfile,whichdescribeshowlayersinteractelectrically.Handleslargeregionsoflayoutinamemory-efficientmannerbybinning.

Usesdevicedefinitionsthatcanbespecifiedusinggeneratedlayers,foragreatlyexpandedsetofpossibledefinitions.Derivedlayersaregeneratedanddisposedofautomatically.Workswiththemostcommondeviceparameters,includingresistance,capacitance,anddevicelength,width,andarea.Theseparametersprovideusefulinformationwhenverifyingdrive,fanout,andothercircuitperformancecharacteristics.3CreatesanetlistfileinBerkeley2G6SPICEformat,usablewithanytoolthatreadsaSPICEnetlist.

ThisnetlistisidealforusewiththeTannerT-SpiceTMcircuitsimulator(toverifydevicesizes,drivecapabilities,andothercircuitperformancefactors)ortheLVSnetlistcomparator(tochecktheequivalenceofnetlistsgeneratedfromdifferentsources).4ConfiguringtheExtractor

Theextractionprocessisdefinedbymakingassociationsbetweenpatternsoflayoutgeometryandthecircuitcomponentstheyrepresent.Theseassociationsaredefinedintheextractdefinitionfile(.ext).5DevicesandConnectionsThefirststepistodeterminethespecificclassesofdevicesandconnectionsthataretobeextracted.Adeviceisanycircuitelement(transistor,resistor,capacitor,diode,etc.).Aconnectionisanyelectricalconnectivitybetweentwoprocesslayers,suchasbetweenthePolyandMetal1layerswhenacontactispresentonthePolyContactlayer.Onlyrelevantdevicesandconnectionsneedbedefined.Forexample,everydesigncontainsresistors,becausenoprocesslayerisaperfectconductor.Butifthedesigntobeextracteddoesnotcontainanywirelongenoughforitsinherentresistancetoaffectthecircuit’sperformance,thenthewiresdonothavetobedefinedandextractedasresistors.6GeneratedLayers

Whenyouusegeneratedlayersinanextractdefinition,L-Editautomaticallygeneratesobjectsonthoselayersbeforeproceedingwithnetlistextraction.Followingnetlistextraction,L-EditautomaticallydeletestheobjectsitcreatedduringthatExtractrun.ItonlydeletesobjectsgeneratedduringthatExtractrun,however—previouslygeneratedobjectsremain.

7Toextractresistorsandcapacitors,youmustalsoenterthefollowingthreeconstantsforeachinvolvedlayer.Anareacapacitance(inattofaradspersquaremicron)單位：af/m2(10-18法拉/平方微米）Afringecapacitance(infemtofaradspermicron)單位：af/m2(10-15法拉/平方微米）Aresistivity(inohmsperunitarea)Capacitanceisthesumoftwoproducts:thatoftheareaofthecapacitorandtheareacapacitance,andthatoftheperimeterofthecapacitorandthefringecapacitance.(Capacitorsarepolygonsontherecognitionlayer.)Resistanceistheproductoftheresistivityandthelengthoftheresistor,dividedbythewidth.

8Theextractoronlyoperatesonboxesandon45°and90°polygonsandwires;itdoesnotextractcirclesorall-anglepolygonsandwires.Note:Generationoflayerscontaining45°objectscanproduceoff-gridverticesduetooff-gridintersectionsof45°polygonsorconversionof45°wirestopolygons.

9ExtractDefinitionFile

Theextractdefinitionfilecontainsalistoftheconnectionsanddevicestobeextracted.Thisfilecanbeusedtodefine:ConnectionsbetweentwodifferentprocesslayersDevicesintermsoftheirtype,componentlayers,pins,andmodelnamesThedirectoryL-EditPro\tech\mosiscontainsasetofextractdefinitionfilesthatcorrespondtovarioustechnologyprocesses.Youcanmodifythesefilesasnecessarytodefineadditionalconnectionsanddevicesforextraction.

10NodeNamesExtractcanwriteoutnodesasinternallygeneratednumbers(usingtheoptionIntegersinExtract—Output)orasdescriptivestrings(usingtheoptionNamesinExtract—Output).

Tolabelanodeorelementforextracttoanetlist,youmustaddaporttothelayerofthatnodeorelement,withinanobject(box,polygonorwire)onthatlayer.WhenNamesisselected,L-Editderivesnodenamesfromthenamesofportsfoundonthesamelayerasthenode.Itderivesportnamesfromportsfoundonthedevice-specificrecognitionlayerthatarecompletelyenclosedbythatdevice.11Ifyouwanttousethesameportsforadesignrulecheckthatusesanassigneddummylayer,youcanchangethelayersforyourportsby:hidingallobjectsexceptforportshidingalllayersexceptthenodelayerselectingallobjects,whichwillbejusttheportsonthenodelayer

usingEdit>EditObjecttochangethelayertothelayerofyourchoice.12Thestringsproducedbytheextractorarethehierarchicalnames;eachinstanceinvolvedinanodeismentionedandseparatedfromtheothersbyaslash(/),withtheportnameattheend.(Instancesthatareunnamedinthelayoutarenamedautomaticallybytheextractor.)Forexample,thenodenameU1/alpha/indescribesaportincontainedbyaninstancealpha,whichinturniscontainedbyaninstanceU1.

13ConfigurationExampleThefollowingexampleillustrateshowtoconfiguretheextractortorecognizeatransistorinaCMOSnwellprocess.Itshowshowtransistorsmaybeclearlyanduniquelyidentifiedbygeneratedlayerdefinitionsanddevicestatementsintheextractordefinitionfile.OtherSPICEdevicesmaybeidentifiedinsimilarfashion.AnNMOStransistorinann-wellCMOSprocessconsistsof:ThechannelAsourcepinofn-dopeddiffusionmaterialtouchingthechannelAgatepinofpolysiliconoverthechannelAdrainpinofn-dopeddiffusionmaterialtouchingthechannelAbulkpintothesubstrateWhentheextractorfindsaconfigurationofpolygonsinthelayoutcorrespondingtothisdefinition,itshouldwriteanNMOStransistorstatementintotheoutputfile(netlist).14DeviceDefinitionThefollowingstatementcausesaMOSFETtobegeneratedintheoutput.#NMOStransistordevice=MOSFET(RLAYER=ntran;Drain=ndiff,WIDTH;Gate=Poly;Source=ndiff,WIDTH;Bulk=subs;MODEL=NMOS;)

15Therecognitionlayerisdefinedasntran,andthepinlayersaredefinedasndiff,Poly,andsubs.

ThiscausestheextractortorecognizeaMOSFETwhereveritseesntrangeometry,touchedbygeometryonndiff,Poly,andsubs.However,MOSFETsarenottypicallycreatedbydrawinggeometryonntran,ndiff,orsubs.TheyarecreatedbydrawingPolygeometryoverActivegeometryinsideNSelectgeometry.

Togeneratecorrectgeometryonthentran,ndiff,andsubslayersfromuser-drawngeometryonActive,Poly,andNSelectlayers,usegeneratedlayers.16RecognitionLayersAtransistorgateisformedonthechipwhenPolygeometryandActivegeometryintersectonthelayout.Thegeneratedlayergate=(Poly)AND(Active)

However,aCMOSprocesswillhavebothNMOStransistors(inthesubstrate)andPMOStransistors.

Thegatelayerdefinitiondoesnotdifferentiatebetweenthetwo.L-EditusesadefaultCMOSsetupthatassumesap-substrate,hasanongeneratedlayer(NWell)fordefiningthen-well,butdoesnothavealayerfordefiningthesubstratesurface.Thegeneratedlayersubs=NOT(NWell)

17Now,twogeneratedlayerscanuniquelyidentifyNMOSandPMOStransistorchannels:ntran=(gate)AND(subs)ptran=(gate)AND(NWell)18PinLayersWhentheextractoridentifiesatransistortobewrittentotheoutputnetlist,itlooksforthepinsthatshouldbetouchingtherecognitionlayerifthedeviceisproperlyconstructed.AMOSFEThasfourpinsattachedtoit:drain,gate,source,andbulk.ThegateisdefinedtobethePolygeometrythattouchesthetransistor.ThebulkinaPMOSdeviceistheNWell,andinanNMOSdevice

isthesubstrate(subs).

19Inthelayout,asinglepolygonontheActivelayerstretchesacrossthewholetransistor,butinafabricatedchip,thediffusionmaterialwillnotexistunderthegate.ThegeneratedlayerFieldActive=(Active)AND(NOT(Poly))createsgeometryoneithersideof,butnotunderneath,atransistorgate.Finally,anNMOStransistorhassourceanddrainpinsmadeupofn-dopedmaterial,andaPMOStransistorhassourceanddrainpinsmadeofp-dopedmaterial.ThedopingtypeiscontrolledbydrawinggeometryontheNSelectandPSelectlayers,sotwogeneratedlayerscanuniquelyidentifybothpinlayers:ndiff=(FieldActive)AND(NSelect)pdiff=(FieldActive)AND(PSelect)20DetectingSoftConnections

Youcanconfiguretheextractortowritespecialdevicesforeachconnectiontoawellorsubstrate,called"softconnections."ThesespecialdevicesmustbeincludedinthenetlistforLVStoidentifysoft-connectednodes.

Byconvention,thesedevicesare0?resistorswithdesignatedmodeltypes,suchasR_WELLCONTACTandR_SUBSCONTACT.21Towritespecialdevicesforsoftconnections,makethefollowingchangesintheextractfile:Todetectohmiccontactstowellandsubstrate,createtwoadditionalderivedlayers:ohmicwellcontact:=nwellwireANDndiffohmicsubstratecontact:=subsANDpdiffDonotconnectwellsandsubstratestodiffusionsthroughohmiccontacts.Lookthroughtheextractfileanddeletelineslikethefollowing:connect(nwellwire,ndiff,ndiff)connect(subs,pdiff,pdiff)Adddevicerecognitionstatementsfortheohmiccontactspecialdevices(resistors).Forexample:22#Wellcontactdevice=RES(RLAYER=ohmicwellcontact;Plus=nwellwire;Minus=ndiff;MODEL=WELLCONTACT;)#substratecontactdevice=RES(RLAYER=ohmicsubstratecontact;Plus=subs;Minus=pdiff;MODEL=SUBSCONTACT;)23RunningtheExtractorTools>Extract

performsnetlistextractionfromtheactivecell.Theoptionsinthisdialogarecategorizedunderthreetabs:GeneralUsedtospecifyinputandoutputfilenamesandthebinsize.OutputUsedtospecifythewayinwhichtheextractedcircuitiswrittentotheoutputnetlist.SubcircuitUsedtospecifyparametersforsubcircuitextraction.

RunBeginstheextractionprocessontheactivecell.Anyinstancesaretemporarily“flattened”(exceptforthosemarkedassubcircuits).AcceptSavesthecurrentsettingswithoutrunningExtract.24Extract–GeneralExtractdefinitionfile

Nameoftheinputfilecontainingtheextractordeviceandinterconnectiondefinitions.YoucanchoosefromavailablefilesanddirectorieswiththeBrowsebutton.SPICEextractoutputfile

Nameoftheoutputfilecontainingtheextractednetlist.Enterthename(orusethedefault).YoucanchoosefromavailablefilesanddirectorieswiththeBrowsebutton.25Binsize

Lengthofonesideofabin,inlocatorunits.Toimproveperformance,L-Editdividesthelayoutintoagridofsquarebinsandextractseachbinindividually.Devicesthatcrossbinboundariesareextractedproperly.BinningisnotusediftheRecognizesubcircuitinstancesboxintheSubcircuittabischecked.Labelalldevices

Foreachunnameddevice,createsatwo-dimensionalportatthelocationofthedevice.Thetextoftheportisthetextoftheelementnameforthedevice.Devicelabelswillnotbegeneratedfordeviceswithuser-placedlabels.ThegroupPlacedevicelabelsonlayercontainsoptionsforwritingthedevicelabelsonthedevice-specificRecognitionLayerorauserspecifiedlayer.

26Extract–OutputWritenodenames

Includesnodenameswitheachdevicestatementinthenetlist.NodenamesarewrittenascommentlinesinthesectionNODENAMEALIASES.SeeWritedevicecoordinates(LocatorUnits)Writesacommentlinefollowingeachdevicestatementinthenetlist.Thecommentincludesthedevicename,pinnames,andcoordinatesofthelowerleftandupperrightcornersofthedevice.27WriteshorteddevicesWriteshorteddevices

IfIGNORE_SHORTSissetintheextractdefinitionfile,writesshorteddevicesintothenetlistascomments;otherwise,shorteddevicesareignored.IfIGNORE_SHORTSisnotset,ashorteddeviceiswrittentotheSPICEfileasaregulardevice.WritelayercapacitanceandresistancewarningsWriteswarningsonlayercapacitanceandresistanceerrorstothespecifiedSPICEfile.28Writenodesanddevicesas

Controlswhethernodesarewrittenasinternallygeneratednumbers(Integers)orasdescriptivestrings(Names).Portsinthelayoutcanbeusedasnodeorelementnamesinthenetlist.Writevaluesinscientific

notation

Whenchecked,thisoptionwritesnumericalvaluesinscientificnotationinsteadofengineeringunits.29WriteverboseSPICEstatementsWritesresistors,inductors,andcapacitorstothenetlistfilewiththedevicevalueprecededwithaR=,L=,orC=.Forexample,acapacitorwouldhavethefollowingformat:Cxxxn1n2modelNameC=cValue.WriteemptysubcircuitdefinitionWritesanemptysubcircuitdefinitionblockatthetopofthenetlistfile.UseonlywithRecognizesubcircuitinstancesonExtract–Subcircuit.Write.ENDstatementWritesa.ENDstatementattheendofthenetlist30WritenodalparasiticcapacitanceComputesthecapacitancewithrespecttothesubstrateofeachnodeinthecircuitusingtheareaandfringecapacitanceconstantsspecifiedwithLayerSetup.ThenodetosubstratecapacitanceofNiswrittentothenetlistasacapacitorbetweenNandthesubstrate/ground(0).TheformofthisnotationisCpar1,Cpar2,etc.WritenodalparasiticcapacitanceisnotgenerallyturnedonwhenanetlistisextractedforLVSsincetheothernetlist(typicallyderivedfromaschematic)willnotcontainparasiticcapacitorsassociatedwithnodes.Ignorenodalparasiticcapacitancelessthan

Specifiesalimit,infemtofarads,belowwhichthenodalparasiticcapacitancewillnotbewrittentothenetlist.ThisfieldisdisabledwhentheWritenodalparasiticcapacitanceboxisunchecked.31SPICEincludestatement

Specifiestextthatiswrittenunalteredasthesecondlineoftheoutputnetlist.Typically,an.includefilecommandisentered,wherefilerepresentsamodelorsubcircuitfilename.32Extract–SubcircuitRecognizesubcircuitinstances

Activatesthesubcircuitrecognitionfeature.Subcircuitrecognitionlayer

Nameofthesubcircuitrecognitionlayer(SRL).Thismandatorylayershouldnotcontainelectricallysignificantgeometry.33Writenetlistasasubcircuitdefinition(.SUBCKT....ENDS)

Whenchecked,thisoptionwritestheentirenetlistinsubcircuitformat.A.subcktcommandappearsbeforethefirstdevice,andan.endscommandappearsafterthelastdevice.Whenthisoptionisused,theremustbeasubcircuitrecognitionpolygonatthetopleveldefiningthesubcircuitinorderforExtracttoproceedwithsubcircuitextraction.

34Flagimproperoverlaps

Controlsthereactiontogeometryviolations:under-orover-filledconnectionportsorgeometrythatoverlapsthesubcircuitboundary.Checktodisplaywarnings;cleartosuppresswarnings.Suppressingwarningscanbeusefulwhenextractingautoroutedstandardcelldesignswithknownover-andunder-fillcharacteristics.35IgnoresubcircuitconnectionportswithnamesListofportswhosenamesareignoredinsubcircuitextraction.Containsthefollowingfields:SPRcore—read-onlyfieldlistingportnamespredefinedinSPRCoreSetup—General.SPRpadframe—read-onlyfieldlistingportnamespredefinedin

SPRPadframeSetup—General.OneOtherPort—usethisfieldtospecifyoneadditional

subcircuitconnectionporttobeignored.Ignoresubcircuitconnectionportonlayer—nameofalayer

onwhichintrudinggeometryandsubcircuitconnectionportswillnotberecognized.ThenetlistextractoralsoignoresanygeometryontheIconlayer(oftenusedfordocumentationpurposes).

36SubcircuitcrossportnamesListsportswhosenamesareignoredinsubcircuitextraction.Containsthefollowingfields:SPRrowcrosser—read-onlyfieldlistingsubcircuitcrossportspredefinedinSPRCoreSetup—General.OneOtherPort—usethisfieldtospecifyoneadditional

subcircuitcrossport.37Subcircuitrecognitionisrecursivewithinnon-subcircuitinstances.Ifahigher-levelcellcontainsanonsubcircuitinstance,andtheinstancedcellitselfcontainsmarked(subcircuit)instances,thenthesubcircuitinstancesareproperlyextractedassubcircuitsatanylevelofhierarchy,andanynonsubcircuitinstancesareflattened.

38ExtractDefinitionFileFormatTheextractdefinitionfilecontainsalistofcomments,connectionstatements,anddevicestatements.ThedirectoryL-EditPro\tech\mosiscontainsasetofextractdefinitionfilesthatcorrespondtovarioustechnologyprocesses.Youcanmodifythesefilesasnecessarytodefineadditionalconnectionsanddevicesforextraction.

39Extractdefinitionfilesmustconformtothefollowingrestrictions:Layernamesarecase-sensitive,andmustmatchthecaseoflayernamesdefinedintheTDBfile.Therestofthedefinitionfileiscase-insensitive;upperandlowercasescanbeusedinterchangeably.Layernamescannotcontaincommasorsemicolonsandtheycannotbelongerthan40characters.Layernamescannothaveleadingortrailingspaces.Pinnamescannotcontaincommas,semicolons,orspaces,andtheycannotbenamedMODEL.Modelnamescannotcontaincommas,semicolons,spaces,orclosingparentheses.40Forcompatibilitywithexistingextractdefinitionfiles,theWIDTHkeywordisignoredforalldevicesexceptaGAASFET/MESFET.IGNORE_SHORTSindicatesthatifthedevicehasallofitspinsconnectedtothesamenodethenitwillbeconsideredshortedandthedevicewillbewrittentotheextractnetlistfileasacomment.41CommentStatementsAcommentstatementbeginswithapoundsign(#)andcontinuestotheendoftheline:#Thisisanextractdefinitionfilecomment.42ConnectionStatementsAconnectionstatementdefinesaconnectionbetweentwodifferentprocesslayers.Aconnectionalwaysinvolvesthreelayers:thetwolayersbeingconnectedandthe“via”or“contact”layerwhichconnectsthem.Connectionstatementshavethefollowingformat:connect(Layer1,Layer2,ThroughLayer)whereLayer1andLayer2arethenamesofthelayersbeingconnected,andThroughLayeristhenameoftheconnectinglayer.Forexample:

#ConnectPolytoMetal1CONNECT(Poly,Metal1,PolyContact)43SubstrateNodeStatementNodalparasiticcapacitancesarereferencedfromthenodetothesubstrate.Youcandesignatethesubstratenodebyindicatingthesubstratelayer.Extractwillthenfindthefirstnodeconnectedtothesubstratelayerandusethatasthesubstratenodewhenwritingtheparasiticnodalcapacitors.Ifnosubstratelayerisindicated,Extractwillusenode0orgroundasthesubstratenode.Thesubstratenodestatementhasthefollowingformat:

SUBSTRATE_NODE=SubstrateLayer;whereSubstrateLayeristhenameofthesubstratelayer.Forexample:#UseSubsastheSubstratenode.

SUBSTRATE_NODE=subs;resultsinthefollowingSPICEoutput:

Cpar15210fwhere2isthesubstratenode.44DeviceStatements–GeneralFormatAdevicestatementdefinesadevice.Passive(capacitors,resistors,andinductors,)active(BJTs,diodes,GaAsFETs,JFETs,MOSFETs),andsubcircuitdevicesarespecifiedwiththesamegeneralformat.Foralldevicestatements,itisnecessarytoidentifyarecognitionlayer,whichisthelayerExtractusestorecognizethedevice.Youmayspecifymultipledeviceswiththesamerecognitionlayeraslongastheyhavedifferentpinconfigurations.Thistechniqueisparticularlyusefulinextractingmultisource/draintransistors.Therecognitionlayerisdefinedasfollows:RLAYER=rLayer;whereRLAYER=isrequired,andrLayeristhenameoftherecognitionlayer.45Followingtherecognitionlayerisalistofpinsofthedevice.Theorderofthislistdeterminestheorderofthepinsintheextractednetlist.Theextractordoesnotrequireanyparticularorder,butLVSrequiresthatbothsourcenetlistscontainpinsinthesameorder,andSPICEsimulatorsalsohavestrictrulesabouttheorderinwhichpinsappear.WerecommendfollowingthestandardSPICEorders:BJTdevices:collector—base—emitter—substrateMOSFET,JFET,andGaAsFet/MESFETdevices:drain—gate—source—bulkDiodes,resistors,capacitors,andinductordevices:positiveNode—NegativeNode.46

IfthepinnamesusedintheEXTfileareCollector,Base,Emitter,andSubstrate(BJTdevices),orDrain,Gate,Source,andBulk(allotheractivedevices),theyaresortedautomaticallyinthedefaultSPICEorder.Pinsarespecifiedasfollows:

pinName=pinLayer;wherepinNameisthenameofthepinandpinLayeristhenameoftheassociatedlayer.47Amodeldefinitionfollowsthelistofpins.Thisdefinitionisnotrequiredforpassivedevices,whereMODEL=;isacceptable.Themodelname,ifpresent,willbewrittenintotheextractednetlist.ForSPICE,modelnamesarenotrequiredforcapacitors,resistors,inductors,ordiodes,butarerequiredforallotherdevices.Forpassivedevices,modelstatementshavetheform:

MODEL=[model];Foractivedevices,modelstatementshavetheform:

MODEL=model;whereMODEL=isrequiredandmodelistheoptionalmodelname.TheemptystatementMODEL=;isstillrequiredifnomodelnameisspecified.48DeviceStatements–SpecificFormatsInthefollowingformatspecifications:Unitalicizedwordsandcharacters(exceptthebracketcharacters[and])aretobeenteredasshown.Wordsandcharactersenclosedbybrackets([])areoptional.Wordsandcharactersenclosedbybracesandseparatedbyaverticalpipe—{option1|option2}—representalternates.Youcanusethesyntaxontheleftortherightsideofthepipecharacter.VariablescontainingthestringLayerrepresentlayernames.modelrepresentstheSPICEmodelnameforthedevice.49CapacitorDEVICE=CAP(RLAYER=rLayer[,{AREA}|{LW}];Plus=Layer1[,AREA];Minus=Layer2[,AREA];MODEL=[modelname];)[IGNORE_SHORTS]AcapacitorhasthefollowingformatintheSPICEoutputstatement:AREAkeywordCxxxn1n2[ModelName][C=]cValueLWkeywordCxxxn1n2[ModelName]L=cLengthW=cWidth50Thefollowingrulesapplytocapacitors:TheoptionalAREAkeywordforacapacitormaybespecifiedononlyonelayer(recognitionorpinlayer)andisusedtoindicatethelayerforwhichthecapacitancewillbecalculated.IfnoAREAkeywordorLWkeywordispresent,thecapacitancewillbebasedontheareaoftherecognitionlayer(rLayer).TheLWkeywordcannotbeusedwiththeAREAkeyword.TheLWkeywordcanonlybeusedwiththerecognitionlayer(rLayer).51Ctotal=Carea+CfringeCarea=(AreaoftheLayer)*(Layer'sAreaCapacitance)Cfringe=(PerimeteroftheLayer)*(Layer'sFringeCapacitance)Theareacapacitance(aF/sq.micron)andfringecapacitance(fF/micron)arespecifiedintheSetupLayersdialogforeachspecificlayer.Capacitoraveragelengthandwidtharecalculatedasifthe52capacitorwasarectangle.Theyarecalculatedasfollows:Lperimeter=PerimeteroftheLayerLarea=AreaoftheLayer#NMOScapacitordevice=CAP(RLAYER=NMOSCapacitor,AREA;Plus=polywire;Minus=ndiff;MODEL=;)#PMOScapacitordevice=CAP(RLAYER=PMOSCapacitor,AREA;Plus=polywire;Minus=pdiff;MODEL=;)54ResistorDEVICE=RES(RLAYER=rLayer[,LW];Plus=Layer1;Minus=Layer2;MODEL=[ModelName];)[IGNORE_SHORTS]AresistorhasthefollowingformatintheSPICEoutputstatement:Rxxxn1n2[ModelName][R=]rValueLWkeywordRxxxn1n2[ModelName]L=rLengthW=rWidthThefollowingrulesapplytoresistors:Resistanceiscalculatedwiththeformula,whereρisthesheetresistanceinunitsofohms/square,listhelengthoftheresistor,andwisthewidthoftheresistor.ThevalueofρistakenfromthenumberspecifiedwiththeSetupLayersdialogfortherecognitionlayer(rLayer)oftheresistor.TheLWkeywordcanonlybeusedwiththerecognitionlayer(rLayer).Thevaluesoflandwaredeterminedfromthelayout.Theextractorcomputestheareaoftherecognitionlayeranddividesitbytheeffectivewidthtoobtainl.Thewidthofapinisthelengthoftheedgethatthepinshareswiththerecognitionlayer(rLayer).Theeffectivewidthistheaverageofthepluspinwidthandminuspinwidth.56W=W-+W+R=

ρ

×

(l?w)RecongtionlayerPluspinMinuspinW-W+57InductorDEVICE=IND(RLAYER=rLayer;Plus=Layer1;Minus=Layer2;MODEL=[model];)[IGNORE_SHORTS]AninductorhasthefollowingformatintheSPICEoutputstatement:Lnamen1n2[model][L=]Extractdoesnotcalculateinductance;usersmustaddthisvalueafternetlistextraction.58BJTDEVICE=BJT(RLAYER=rLayer[,AREA];Collector=cLayer[,AREA];Base=bLayer[,AREA];Emitter=eLayer[,AREA];[Substrate=[sLayer]];MODEL=model;)[IGNORE_SHORTS]ABJTdevicehasthefollowingformatintheSPICEoutputstatement:Qnamecolbasemt[sub]model[AREA={rLayerArea|pinArea}/areaVal]59ThefollowingrulesapplytoBJTdevices:TheoptionalAREAkeywordcanbespecifiedononlyonelayer(therecognitionlayerorthepinlayer).Itisusedtoindicatethelayerforwhichtheareaistobecalculated.Nominalareacanbeexpressedeitherindecimalorscientificnotation.Ithasunitsofm2,butnouni