LTPS工藝流程與技術(shù)

Shanghai

Tianma

Micro

electronics

Co.,LtdLTPS工藝流程與技術(shù)AMOLEDZhao

Ben

Ganga-Si

&

LTPS,and

processKey

process

of

LTPSLTPS

process

flowSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.2.目錄LTPS

:Low

Temperature

Poly-Silicona-Si

&

LTPS,

and

processSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.3.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.4.a-Si

TFT&

LTPS

TFTSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.5.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.6.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.7.LTPS&OLEDSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.8.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.9.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.10.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.11.+

dopingSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.12.Key

process

of

LTPSSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.13.CVD技術(shù)SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.14.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.15.去氫工藝SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.16.FTIR檢測(cè)氫含量去氫工藝:高溫烘烤;快速熱退火;高溫腔體或低能量激光去氫緩沖層作用:防止玻璃中的金屬離子(鋁,鋇,鈉等)在熱工藝中擴(kuò)散到LTPS的有源區(qū),通過(guò)緩沖層厚度或沉積條件可以改善多晶硅背面的質(zhì)量;有利于降低熱傳導(dǎo),減緩被激光加熱的硅冷卻速率,利于硅的結(jié)晶SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.17.SSiiOO22,,

SSiiOO22//SSiiNNxxSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.18.四乙氧基硅烷SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.19.highcostSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.20.TEOS

oxide具有低針孔密度，低氫氧含量，良好的臺(tái)階覆蓋性。SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.21.SiNx:具有高的擊穿電壓特性具備自氫化修補(bǔ)功能絕緣層選擇廣泛應(yīng)用于非晶硅柵絕緣層與多晶硅的界面存在過(guò)多的缺陷和陷阱，易產(chǎn)生載流子捕獲缺陷和閾值電壓漂移，可通過(guò)SiO2/SiNx克服SiO2:臺(tái)階覆蓋性與多晶硅界面匹配,應(yīng)力匹配SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.22.一般采用SiNx，SiO2,而SiO2/SiNx結(jié)構(gòu)可以得到良好的電學(xué)特性，和氫化效果SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.23.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.24.結(jié)晶技術(shù)SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.25.ELA

(Excimer

Laser

Annel)Sony公司提出，現(xiàn)在大部分多晶硅TFT公司采用line

beam工藝。Line

Beam

Scan

mode現(xiàn)在技術(shù)：XeFSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.26.晶化效果a-SiSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.27.P-SiPartially

melting

regimeNear-complete

melting

regimeMechanismof

ELAComplete

melting

regimeSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.28.MIC&MILC

(Metal

Induced

Lateral

Crystallization)SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.29.SPC（solid

phase

crystallization）SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.30.SPCSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.31.SPCELA晶粒：200-300nmComparison

of

different

backplaneSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.32.離子注入技術(shù)V族元素(P

,As,Sb)III族元素(B,Al,Ga)提供電子,形成N型半導(dǎo)體提供空穴,形成P型半導(dǎo)體SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.33.半導(dǎo)體摻雜:PH3/H2,B2H6/H2離子注入機(jī)離子束呈細(xì)線狀或點(diǎn)狀,難以得到大的電流束,采取掃描方式注入,產(chǎn)能低;通過(guò)質(zhì)量分析裝置控制注入劑量,均勻度2%離子云注入機(jī)離子束線狀,電流束較長(zhǎng),產(chǎn)能較高,成本低;通過(guò)法拉第杯控制注入劑量,均勻度5%SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.34.LDDSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.35.方塊電阻小于10K歐姆/□方塊電阻40K---100K歐姆/□?LDD作用：抑制“熱載流子效應(yīng)”??以較低的注入量在源極/漏極端與溝道之間摻雜,形成一濃度緩沖區(qū),等效串聯(lián)了一個(gè)大電阻,水平方向電場(chǎng)減少并降低了電場(chǎng)加速引起的碰撞電離產(chǎn)生的熱載流子幾率注入劑量過(guò)少則造成串聯(lián)電阻過(guò)高,使遷移率下降;注入劑量過(guò)多則會(huì)失去降低漏極端邊緣電場(chǎng)強(qiáng)度的功能.LDDSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.36.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.37.Repair

broken

bonds

damaged

in

ion

dopingIncrease

conductance

of

doping

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.38.?氫化處理的目的?多晶硅晶粒間存在粒界態(tài)，多晶硅與氧化層間存在界面態(tài)，影響晶體管電性。氫化處理以氫原子填補(bǔ)多晶硅原子的未結(jié)合鍵或未飽和鍵，粒界態(tài)，氧化層缺陷，以及界面態(tài)，來(lái)減少不穩(wěn)態(tài)數(shù)目，提升電特性：遷移率，閾值電壓均勻性等。?氫化處理方法?

1.等離子體氫化法：利用含氫的等離子體直接對(duì)多晶體和氧化層做?

處理?

2.固態(tài)擴(kuò)散法：SiNx薄膜作為氫化來(lái)源，特定溫度烘烤使氫原子擴(kuò)散進(jìn)入多晶體和氧化層?SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.39.氫化工藝SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.40.SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.41.LTPS的主要設(shè)備TEOS

CVD激光晶化設(shè)備離子注入機(jī)快速熱退火設(shè)備ICP-干刻設(shè)備HF清洗機(jī)PVD光刻機(jī)濕刻設(shè)備干刻設(shè)備CVDSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.42.共用產(chǎn)線設(shè)備LTPS設(shè)備OLE

D蒸鍍封裝SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.43.離子注入機(jī)AOI快速熱退火設(shè)備激光晶化設(shè)備磨邊清洗機(jī)SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.44SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.45FFS(

Fringe-Field

Switching

)&IPS(In-Plane

Switching).January

2346LTPS-TNLTPS-OLEDLTPS-IPS47GateActiveSDPassivationITO

PixelPoly（多晶硅刻蝕）CHD（溝道摻雜）M1

（gate層）ND（n+摻雜）PD（

p+摻雜）M2

（SD層）PV

（passivation）Via

1（過(guò)孔1）RE（反射電極）PDL（像素定義層）SpacerSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTDL.

TPS-OLEDa-Si工藝Via

2

（平坦化層）Poly（多晶硅刻蝕）CHD（溝道摻雜）M1

（gate層）ND（n+摻雜）PD（

p+摻雜）M2

（SD層）PV

2（passivation）Via

1（過(guò)孔1）ITO1Via

2

（平坦化層）ITO2LTPS-IPS.玻璃基板Glass玻璃投入清洗LTPS

process

flow預(yù)處理SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.48.RTA

System

OverviewModel：YHR-100HTCST

Port（3個(gè)）CST

Robot（1個(gè)）Chamber

（2個(gè)）Cooling

stage（4層）SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.49.沉積緩沖層\有源層GlassPECVD緩沖層+有源層有源層緩沖層去氫防止氫爆清洗SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.50.GlassC,UV

SLOPE多晶硅晶化Spin

clean

晶化多晶硅測(cè)量XRD,RAMAN,SEM,AFM,MISHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.51.GlassN-channelDriver

areaPixel

areaP-channelP-Si刻蝕(mask1)SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.52.光刻干刻P-Si去膠P-Si刻蝕(mask1)Taper

49SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.53.PRB+P-channelN-channel光刻溝道摻雜(maskChannel

doping補(bǔ)償vth2)去膠GlassN-channelDriver

areaPixel

areaP-channelSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.54.溝道摻雜SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.55.PRN+摻雜(mask3)GlassP-channelN-channelDriver

areaPHX+第3次光刻N(yùn)+doping

灰化去膠Pixel

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.56.N+摻雜(mask3)SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.57.GATE

InsulatorPECVD

GIPixel

areaP-channelN-channelDriver

areaSpin清洗GlassSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.58.PRPRPRPRGlassN-channelDriver

areaPixel

areaP-channelGate層（mask4）Spin清洗Gate成膜光刻PRSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.59.N-channelDriver

areaPixel

areaGate刻蝕(干刻)GlassP-channelECCP干刻去膠SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.60.Gate刻蝕(干刻)Taper

53GI

loss~350ATaper

46GI

loss~0ASHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.61.LLDDDD摻摻雜雜PHX+LDD

DopingLDD

DopingP-channelGate掩膜LDDGlassN-channelDriver

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.62.Pixel

areaPRPRGlassB+

DopingP-channelN-channelDriver

areaPP++摻摻雜雜((mmaaskk55))s第5次光刻P+

doping灰化

去膠Pixel

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.63.P+摻雜SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.64.GlassN-channelDriver

areaPixel

areaP-channelILD成膜與活化（氫化）BHF清洗ILD成膜活化(氫化）SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.65.GlassN-channelDriver

areaPixel

areaP-channel光刻Via1(mask6)ICP刻蝕去膠SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.66.通孔刻蝕SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.67.通孔刻蝕SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.68.SD層(mask7)GlassN-channelDriver

areaPixel

areaP-channelBHF清洗SD成膜光刻ECCP干刻去膠Metal

annealSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.69.Power↓Ar

↓成膜溫度↓SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.70.SD成膜SD干刻SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.71.GlassN-channelDriver

areaPixel

areaP-channel清洗Passivation層SiNx成膜(mask8)光刻

ICP

orRIE去膠SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.72.Passivation層SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.73.平坦化層(mask9)清洗涂布有機(jī)膜光刻GlassPixel

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.74.P-channelN-channelDriver

area平坦化層LTPS（TN）LTPS-OLEDLTPS-IPSSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.75.像素電極清洗GlassPixel

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.76.P-channelN-channelDriver

areaITO鍍膜光刻去膠電極刻蝕(mask10)退火濕刻GlassPixel

areaP-channelN-channelDriver

areaLTPS-TN

array完成SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.77.反射電極清洗Ag鍍膜GlassPixel

areaP-channelN-channelDriver

areaITO鍍膜ITO鍍膜SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.78.光刻去膠電極刻蝕(mask10)退火濕刻GlassPixel

areaP-channelN-channelDriver

areaSHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.79.電極刻蝕(mask10)SHANGHAI

TIANMA

MICRO-ELECTRONICS

CO.,LTD.80.PDL/Spacer層(mask11/12)for

OLEDGlassPixel

areaSHANGHAI

TIANMA