等離子體等離子體制備微晶硅薄膜太陽電池

等離子體等離子體制備微晶硅薄膜太陽電池

1性別對碳系co能grackingsnosilit-sic-tofab意義上的粘膜上訴粘膜。面向非正字體的si-分配，分配給ci的分配，并分配給非正字體的分配。例如，在這一事件中，高速hy譴責(zé)玻璃傳輸?shù)谋砻鎱^(qū)域（c-si:h）的數(shù)量尚未確定，但報告的sultansultan表面區(qū)域的數(shù)量尚未確定。這是第一塊牌匾。微絲區(qū)域。洛杉磯高原（cd）上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的第二塊太陽上的。ThispaperaddressesthedevelopmentofSnO2andSnO2/ZnObi-layerfilmsbyDC-magnetronsputtering.SnO2andSnO2/ZnOfilmswereexposedinH-plasmaatdifferentsubstratetemperaturesforvarioustimes.Theopticalproperties,surfacemorphologies,andresistivitiesoftheseTCOfilmsbeforeandafterH-plasmaexposurewerestudied.Finally,aμc-Si:HthinfilmsolarcellwasfabricatedonZnO/SnO2/glass.2u2004藥品與u2004ZnOfilmswiththicknessof50nmweredepositedonSnO2-coatedglassbyDC-magnetronsputteringatasubstratetemperatureTs=300℃,DCvoltageVDC=250V,andpressure0.5Pa.TheSnO2andSnO2/ZnOfilmswereexposedunderhydrogenplasmawiththeconditionsof50WRF-power,130Pachamberpressure,and200sccmH2flow,wherethesubstratetemperaturesandexposuretimeswerechanged.Filmcharacterizationswereperformedbeforeandaftertheplasmaexposure.TheopticaltransmissionsoftheTCOfilmsweremeasuredwithaUVspectrophotometer,andthesurfacemorphologieswerestudiedbyscanningelectronmicroscopy(SEM).TheresistivitiesoftheSnO2andSnO2/ZnOfilmsbeforeandafterH-plasmaexposureweretestedwithafour-pointprobe.SimplemicrocrystallinesolarcellswerefabricatedinamultichamberPECVDsystemwithdiodetypeparallelplatereactorsdecomposingdifferentgasmixturesbyplasmaonSnO2/ZnOfilm.Thep-i-nstructurewasglass/SnO2/ZnO/p-μc-Si:H/i-μc-Si:H/n-μc-Si:H/Al.Theperformancesofthesolarcellswerestudiedfromcurrent-voltagecharacteristics,measuredunderAM1.5illuminationbyasourcesolarsimulator.3影響的神圣迪迪斯運營3.1“vsippen”第..4與.4細(xì)胞二元visiburesixcoatingvisipersonalssorace.........................................................3.3Figures1and2showtheopticaltransmissionspectraofthesinglelayerSnO2andbi-layerSnO2/ZnOfilmsbeforeandafterhydrogenplasmaexposure,respectively.Inallthecases,theopticaltransmissionishighoverawiderrangeofwavelengthsforbothsingle-layerSnO2(curveaofFig.1)andSnO2/ZnObi-layer(curveeofFig.2)beforeH-plasmaexposure.WiththinZnOfilm,thetransmissionintherangeofvisiblelighthaslittlechange.InFig.1,curvebshowstheopticaltransmissionofSnO2filmafter5minhydrogenplasmaexposureat150℃,whereascurvecshowsthetransmissionafter5minH-plasmaexposureat200℃andcurvedshowsthetransmissionafter1minH-plasmaexposureat300℃.At150℃,theSnO2filmisstableenoughduringH-plasmaexposureandtheopticaltransmissiondoesnotchangeatall.Howeverwhenthesubstratetemperatureishigherthan150℃,thetransmissioninthevisiblerangedecreasesdrastically.InthecaseofSnO2/ZnObi-layerfilm(showninFig.2),ZnOcoatinginducesadecreaseinthetransmissionintheinfraredregion,butthechangeintransmissionisverysmall,andaftertheH-plasmaexposurethereisaslightincreaseininfraredtransmission.Thismaybebeneficialforitsapplicationinsolarcellsasawindowlayer.3.2u3000ge-la三維建模Figures3(a)and(b)showthesurfacemorphologiesofSnO2filmsbeforeandafterH-plasmaexposure,respectively.After1minofplasmaexposure,theSEMofhydrogenplasma-exposedSnO2changed.Grainswithsize~80nmareobservedintheplasma-degradedSnO2film,andthegrainsdisplaysphericalcharacter.Meanwhile,graypowderappearedonthesurfaceoftheglass.Thereasonmaybethatunderhydrogenplasma,HatomsreactwithlatticeoxygenatomsandmetallicSnispresented.Figure4showsthesurfacemorphologyofSnO2/ZnObi-layerfilmafterH-plasmaexposure.Comparedwiththesurfacemorphologyofas-depositedZnOfilm(notshownhere),ZnOfilmdoesnotdegradeunderhydrogenplasma,becauseathinZnOlayeractsasaprotectivelayeronSnO2surfaces,notwithstandingthicknessof50nmonly.Thisbi-layerfilmcanbeexposedtoH-plasmawithoutanymajorchangeinopticaltransmission.ThedifferentdurabilityofSnO2andZnOtoH-plasmaisduetothedifferentoxidizabilitiesofSnandZnions,theformerofwhichishigherthanthelatter.3.3sno2/znobi-lactore-sno2德國co治理法上的sno2/la三維c.sn/h-placket/h-placket/sno2straced以lacket為例Table1showstheresistivitiesofSnO2andSnO2/ZnObi-layerfilmsbeforeandafterH-plas-maexposure.ForSnO2films,after5minH-plasmaexposureat150℃,theresistivitybecomeslessthanthatofthedepositedfilm,butremainsonthesameorderofmagnitude;Whenthetemperatureincreases,theresistivitydecreasessharply.ThisiscausedbythedeoxidizationofSnfromtheSnO2structure.ForSnO2/ZnObi-layerfilms,H-plasmaexposurehaslittleinfluenceontheresistivitiesofthefilms,andthedecreasingofresistivitiesiscausedbyannealingatdifferentsubstratetemperatures.Simplesinglejunctionsolarcellswiththestructurep-μc-Si:H/i-μc-Si:H/n-μc-Si:H/Alhavebeenfabricatedonglass/SnO2/ZnOsubstrates.TheI-VcharacteristicsofthismicrocrystallinesiliconbasedcellsareshowninFig.5,andanefficiencyof3.8%isobtained.Dasetal.demonstratedthatcellspreparedonSnO2-coatedglasssubstratehavealowefficiencyvalue.ThisisduetothedegradationofSnO2filmunderhighhydrogenplasma,whichisessentialforthefabricationofap-μc-Si:Hlayer.3.4u2004范圍ThereasonsthatZnOfilmismorestablethanSnO2filminH-plasmacanbeexplainedbythedifferenceofstandardelectrodeelectricalpotentialbetweenmetalZnandSn:Sn4+?→0.15Sn2+?→???0.136Sn(1)Sn4+→0.15Sn2+→-0.136Sn(1)Zn2+?→???0.763Zn(2)Ζn2+→-0.763Ζn(2)Equations(1)and(2)showthestandardelectrodepotentialelectricalpotentialofmetalSnandZn.Althoughthisvalueismeasuredinliquidsolution,wecanobtainthattheelectricalpotentialofSn4+ismuchhigherthanZn2+ironinthesamestate.ThismeansthatinfilmsZnOismorestablethanSnO2underH-plasmacondition,andthelattermayreactasfollows:SnO2+4H→Sn+2H2OSnΟ2+4Η→Sn+2Η2ΟThus,theopticaltransmissionofSnO2filmsdecreasesdrasticallyunderH-plasmaoftheplayerandthemaximumpartofincidentlightwillbeabsorbedinsidetheTCO,i.e.effectivelightabsorptionintheactivelayerisreduced.SnO2/ZnOstructureisstableenoughinH-plasmaandcanbeappliedinmicrocrystallinesiliconsolarcells.4sno2/znobi-lactorssili農(nóng)村SnO2andZnOcoatedSnO2