雙片集成波長可調(diào)諧垂直腔面發(fā)射激光器的研制的中期報告

雙片集成波長可調(diào)諧垂直腔面發(fā)射激光器的研制的中期報告Abstract摘要：Thisreportpresentstheprogressofourdevelopmentofadual-chipintegratedwavelength-tunablevertical-cavitysurface-emittinglaser(VCSEL)overthepastsixmonths.Thedesign,fabrication,andtestingofthedevicearedescribedandanalyzed.Theresultsdemonstratethesuccessfulgenerationoftunablelaseroutput,andhighlightthedevice'spotentialapplicationsinopticalcommunications,sensing,andmedicalphotonics.本報告介紹了我們在過去六個月里開發(fā)雙片集成波長可調(diào)諧垂直膜面發(fā)射激光器的進展情況。報告描述和分析了該裝置的設(shè)計、制造和測試。結(jié)果表明，成功產(chǎn)生了可調(diào)諧激光輸出，并突出了該裝置在光通信、傳感和醫(yī)學光子學等領(lǐng)域的潛在應(yīng)用。Introduction引言：Vertical-cavitysurface-emittinglasers(VCSELs)havebeenwidelyusedinvariousapplicationsduetotheiruniqueadvantagessuchashighefficiency,lowthresholdcurrent,tunablewavelength,andeasyintegrationintwo-dimensionalarrays.InordertofurtherimprovetheperformanceandexpandtheapplicationsoftheVCSELs,variousapproacheshavebeenproposed,suchasusingdual-chipintegrationtoachievewavelengthtunability.Inthisreport,wedescribetheprogressofourdevelopmentofadual-chipintegratedVCSELwithwavelengthtunability.垂直膜面發(fā)射激光器具有高效率、低閾值電流、可調(diào)波長和易于在二維陣列中集成等獨特優(yōu)勢，因此在各種應(yīng)用中得到了廣泛應(yīng)用。為了進一步提高VCSEL的性能并擴展其應(yīng)用領(lǐng)域，已經(jīng)提出了各種方法，例如使用雙片集成實現(xiàn)波長可調(diào)性。在本報告中，我們描述了我們開發(fā)的具有波長可調(diào)性的雙片集成VCSEL的進展情況。Design設(shè)計：Theproposeddual-chipintegratedVCSELconsistsoftwoVCSELchipsthatareelectricallyandopticallyconnectedbymicro-lensesandaspacerlayer.OneVCSELchipisdesignedasagainchip,whichprovidesthegainforlasing,whiletheotherVCSELchipisdesignedasatunablecavitychip,whichcontrolsthewavelengthofthelaseroutput.Themicro-lensesareusedtocouplethelightbetweenthetwochips,andthespacerlayerisusedtoprovidetheelectricalandthermalisolationbetweenthetwochips.所提出的雙片集成VCSEL由兩個VCSEL芯片組成，通過微透鏡和間隔層進行電學和光學連接。一個VCSEL芯片被設(shè)計為增益芯片，提供激光的增益，而另一個VCSEL芯片被設(shè)計為波長可調(diào)腔芯片，控制激光輸出的波長。微透鏡用于在兩個芯片之間耦合光，而間隔層用于在兩個芯片之間提供電學和熱隔離。Fabrication制造：Thefabricationprocessofthedual-chipintegratedVCSELstartswiththeepitaxialgrowthoftheVCSELlayersonaGaAssubstrate.Thegainchipandtunablecavitychiparefabricatedseparately,followedbythegrowthofthespacerlayerandthedepositionofthemicro-lenses.Thetwochipsarethenalignedandbondedtogetherusingaflip-chiptechnique.Afterthat,thedeviceispackagedandwire-bondedfortesting.雙片集成VCSEL的制造過程始于在GaAs基片上外延生長VCSEL層。首先單獨制作增益芯片和波長可調(diào)腔芯片，并在其上生長間隔層并沉積微透鏡。然后使用翻轉(zhuǎn)片技術(shù)將兩個芯片對準并粘合在一起。之后，裝置進行封裝和線性測量。Testing測試：Thedevicewastestedforitstunablewavelengthrange,poweroutput,andspectralcharacteristics.Atunablelasersourcewasusedastheinputtosweepthewavelengthrange,andtheoutputwasmeasuredusingapowermeterandaspectrometer.Theresultsshowthatthedevice'swavelengthrangecanbetunedfrom980nmto1010nm,withaside-modesuppressionratioofover25dBandamaximumoutputpowerof2mW.對裝置進行了波長可調(diào)范圍、功率輸出和光譜特性的測試。使用可調(diào)諧激光源作為輸入來掃描波長范圍，并使用功率計和光譜儀測量輸出。結(jié)果表明，該裝置的波長范圍可以從980nm調(diào)諧到1010nm，旁模抑制比超過25dB，最大輸出功率為2mW。Conclusion結(jié)論：Inconclusion,wehavesuccessfullydevelopedadual-chipintegratedVCSELwithwavelengthtunability.Thedevicedemonstrateshighperformanceintermsofside-modesuppressionratioandoutputpower,withpotentialapplicationsinopticalcommunication,sensing,andmedicalphotonics.Furtheroptimizationsandimprovementswillbepursuedinth