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HuazhongUniversityofScienceandTechnology
TheDepartmentofElectronicsandInformationEngineering
ElectronicCircuitAnalysisandDesign
Dr.TianpingDeng
Email:
dengtp@
Contents
PART1
SEMICONDUCTORDEVICESANDBASICAPPLICATIONS
Chapter1
Chapter2
Chapter3
Chapter4
Chapter5
Chapter6
Chapter7
Chapter8
SemiconductorMaterialsandDiodesDiodeCircuits
TheField-EffectTransistor
BasicFETAmplifiers
TheBipolarJunctionTransistorBasicBJTAmplifiersFrequencyResponse
OutputStagesandPowerAmplifiers
PART2
ANALOGELECTRONICS
Chapter9
Chapter10
Chapter11
Chapter12
Chapter13
Chapter14
Chapter15
IdealOperationalAmplifiersandOp-AmpCircuitsIntegratedCircuitBiasingandActiveLoadsDifferentialandMultistageAmplifiers
FeedbackandStabilityOperationalAmplifierCircuits
NonidealEffectsinOperationalAmplifierCircuits
ApplicationsandDesignofIntegratedCircuits
Next,wewillstudych1,
Youmustlearn:
P7-14P20-28P30-38P39-44
P47-49
Ch1.
SemiconductorMaterialsandDiodes
1.1
1.2
SemiconductorMaterialsandProperties
ThePNJunction
1.3
DiodeCircuitsDCAnalysisandModels
1.4
DiodeCircuitsACEquivalentCircuit
1.5
1.6
OtherDiodeTypes
DesignApplication:DiodeThermometer
1.7Summary
1.1
SemiconductorMaterialsandProperties
1.1.1
1.1.2.
IntrinsicSemiconductor
ExtrinsicSemiconductor
N-typesemiconductor
P-typesemiconductor
Ch1.
SemiconductorMaterialsandDiodes
1.1
SemiconductorMaterialsandProperties
1.1.1.
IntrinsicSemiconductor(P8)
Materials
electriccurrentcanflowfreelyMetalssuchascopper
Glass,plastics,ceramics
Conductor
:Lowresistivity
Insulator
:Highresistivity
Semiconductor
:silicon,germanium,galliumarsenide
砷化鎵
Conductivityliesbetweenthatofconductorsandinsulators
Anintegratedcircuit(IC)orotherelectroniccomponent
containingasemiconductorasabasematerial.
P8T1.1
SiliconValley
PeriodicTableoftheElements
PeriodicTableoftheElements
1.1.1
IntrinsicSemiconductor
1.
Silicon,
germanium single-crystal
structure
AttemperatureT=0oK,siliconisaninsulator.
valenceelectrons
Theelectronsintheoutermostshell
中子
質(zhì)子
1.1.1
IntrinsicSemiconductor
EachSiatomsharesoneelectronwitheachofitsfournearestneighborssothatitsvalenceband
willhaveafull8electrons.
1.1.1 IntrinsicSemiconductor
WhenTincreases,freeelectronsand“holes”arecreated
1.1.1 IntrinsicSemiconductor
濃度
Inpuresemiconductor,theconcentrationofelectrons
andholesareequal,andverysmall,soitconductivity.
hasverysmall
electron-holepairs
1.1.1
IntrinsicSemiconductor
IntrinsicCarrierConcentration(P10)
Eg
nBT32e2kT
i
B–coefficientrelatedtospecificsemiconductor
T–temperatureinKelvin
Eg–semiconductorbandgapenergy
k–Boltzmann
constant
n(Si,300K)1.5x1010cm3
i
1.1.1
IntrinsicSemiconductor
TwotypesofCarriers
?
Freeelectron---
producedbythermalionization.
Itcanmovefreelyinthelatticestructuresoastoformcurrent.
?
Hole---
emptypositioninbrokencovalentbond.Itcanbefilledbyfreeelectron(recombination).
Afreeelectronisnegativechargeandaholeispositivecharge.
?
1.1.1
IntrinsicSemiconductor
Empty
space
Empty
space
Empty
space
Emptyspace
Aholecanberegardedasapositivechargecarrier
Doestheholecanmovethroughthecrystalfreely?
1.1.1
IntrinsicSemiconductor
1.1.2.
ExtrinsicSemiconductor(P11)
Theelectronandholeconcentrationsinanintrinsicsemiconductorarerelatively
small.
The
concentrationscanbegreatly
increasedbyaddingcontrolledamounts
ofcertainimpurities.
雜質(zhì)
1.1.2.
ExtrinsicSemiconductor
DopedSemiconductor——ntype
Si Si Si 施主
FreeE
Donor
Si +SPi Si
boundcharge
Si Si Si 束縛電荷
1.1.2.
ExtrinsicSemiconductor
1.phosphorus+silicon=N-typesemiconductorHolespresentbecauseofthermalenergy
Whatarethemajoritycarriersinn-typematerials?
?
Whataretheminoritycarriersinn-typematerials?
N-typesemiconductormaterial
(phosphorus)
donor:providefreeelectrons
majoritycarrier–electrons
minoritycarrier–holes
Redundant
electron
DonorImpurity
Positivecharge
多數(shù)載流子:多子
少數(shù)載流子:少子
N-typesemiconductor
ntypeSemiconductor
五價(jià)
Donor---pentavalentimpurityprovidesfree
electrons,usuallyentirelyionized.
Positiveboundcharge---impurityatomdonatingelectrongivesrisetopositiveboundcharge.
Majoritycarriers---freeelectrons(mostlygeneratedbyionizeddonorandaverytinyportion
?
?
?
bythermalionization).
離子化
?
Minoritycarriers---holes(onlygeneratedbythermalionization).
1.1.2.
ExtrinsicSemiconductor
DopedSemiconductor——ptype
Si Si Si 受主
Acceptor
Al Si SA––il Si
Si Si Si
Hole
Boundcharge
1.1.2.ExtrinsicSemiconductor
2.
boron+silicon=P-type
semiconductor
?
WhatarethemajoritycarriersinP-typematerials?
WhataretheminoritycarriersinP-typematerials?
AI
N
P-typesemiconductor
material(Boron)
c
acceptor:acceptanextraelectrons
majoritycarrier–holes
minoritycarrier–electrons
cceptor
purity
Motionof
egative holes
harge
P-typesemiconductor
Hole
ptypeSemiconductor
三價(jià)
Acceptor---trivalentimpurityprovidesholes,usually
entirelyionized.
Negativeboundcharge---impurityatomacceptingholegiverisetonegativeboundcharge
Majoritycarriers---holes(mostlygeneratedbyionizedacceptorandatinysmallportionbythermalionization)
Minoritycarriers---freeelectrons(onlygeneratedbythermalionization.)
?
?
?
?
1.1.2.ExtrinsicSemiconductor
1.phosphorus+silicon=N-typesemiconductor
PositiveCharges+holes=electrons
majoritycarrier
Doping
minoritycarrier
Temperature
2.
boron+silicon=P-type
semiconductor
NegativeCharges+electrons=holes
majoritycarrier
minoritycarrierTemperature
Doping
Conclusiononthedopedsemiconductor
?
Majoritycarrieris
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