IGBT模塊：技術(shù)、驅(qū)動(dòng)和應(yīng)用課件：射頻震蕩

IGBT模塊：技術(shù)、驅(qū)動(dòng)和應(yīng)用射頻振蕩1IGBTModules–Technologies,DriverandApplicationIGBTModules–Technologies,DriverandApplication目錄3124簡(jiǎn)介短路振蕩IGBT關(guān)斷振蕩拖尾電流振蕩5小結(jié)簡(jiǎn)介反饋路徑：寄生電容（密勒電容）和雜散電感IGBTModules–Technologies,DriverandApplication如果反饋相移，系統(tǒng)的放大倍數(shù)會(huì)增大并可能導(dǎo)致振蕩。IGBT等效為一個(gè)共射極放大器IGBT和寄生元件行程LC振蕩短路振蕩IGTBModules–Technologies,DriverandApplicationSC1短路振蕩SC2短路振蕩5IGBTModules–Technologies,DriverandApplicationIGBT振蕩影響IGBT短路振蕩的參數(shù)短路振蕩IGBT設(shè)計(jì)、制造過程中的參數(shù)優(yōu)化：IGBTModules–Technologies,DriverandApplication

IGBT模塊布局對(duì)振蕩特性的影響（SC1短路）IGBT關(guān)斷振蕩IGBT關(guān)斷振蕩的機(jī)理IGBTModules–Technologies,DriverandApplication正反饋導(dǎo)致振蕩IGBT關(guān)斷振蕩影響IGBT關(guān)斷振蕩的參數(shù)IGBTModules–Technologies,DriverandApplicationIGBT關(guān)斷振蕩調(diào)整內(nèi)部柵極電阻選擇低CGC和高CGE的IGBT芯片并聯(lián)時(shí)優(yōu)化模塊內(nèi)部布局并聯(lián)連接時(shí)優(yōu)化IGBT模塊外部連接布局IGBTModules–Technologies,DriverandApplicationIGBT在研發(fā)階段需要采取的針對(duì)措施：IGBT關(guān)斷振蕩模塊布局對(duì)IGBT關(guān)斷特性的影響IGBTModules–Technologies,DriverandApplication拖尾電流振蕩IGBTModules–Technologies,DriverandApplicationIGBT關(guān)斷時(shí)拖尾電流振蕩二極管關(guān)斷時(shí)拖尾電流振蕩拖尾電流振蕩

IGTBModules–Technologies,DriverandApplication剩余載流子(只有空穴)PETT振蕩機(jī)理BARITT振蕩機(jī)理拖尾電流振蕩震蕩產(chǎn)生的時(shí)間和程度完全取決于所工作的環(huán)境，影響IGBT和二極管拖尾電流震蕩的參數(shù)如表所示IGBTModules–Technologies,DriverandApplication拖尾電流振蕩IGBT拖尾電流的實(shí)驗(yàn)結(jié)果對(duì)比（附加鍵合線）IGBTModules–Technologies,DriverandApplication小結(jié)短路振蕩：

SC1和SC2振蕩特性IGBT關(guān)斷振蕩：

米勒電容拖尾電流振蕩：PETT、BARITT振蕩機(jī)理IGBTModules–Technologies,