BDW94CFI中文資料

1、BDW94CFI中文資料BDW93CFI BDW94CFICOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSs SGS-THOMSON PREFERRED SALESTYPES sMONOLITHIC DARLINGTON CONFIGURATIONs COMPLEMENTARY PNP -NPN DEVICES sINTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODEAPPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTIONTh

2、e BDW93CFI,is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration and is mounted in ISOWATT220plastic package.It is intented for use in power linear and switching applications.The complementary PNP type is the BDW94CFI.INTERNAL SCHEMATIC DIAGRAMJune 1997ABSOLUTE MAXIMUM RA

3、TINGSSymbolParameterValue UnitNPN BDW93CFI PNPBDW94CFIV CBO Collector-Base Voltage (I E =0)100V V CEO Collector-Emitter Voltage (I B =0)100V I C Collector Current 12A I CM Collector Peak Current 15A I B Base Current0.2A P t ot Total Dissipation at T c 25 oC 40WT stg Storage Temperature-65to 150o C T

4、 jMax.Operating Junction Temperature150oCFor PNP types voltage and current values are negative.R 1Typ.=10K ?R 2Typ.=150?123ISOWATT2201/4THERMAL DATAR t hj-ca se Thermal Resistance Junction-case 3.1o C/W ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)Symbol Parameter Test Conditio

5、ns Min.Typ.Max.UnitI CBO Collector Cut-offCurrent(I E=0)V CB=100VV CB=100V T case=150o C1005AmAI CEO Collector Cut-offCurrent(I B=0)V CE=80V1mAI EBO Emitter Cut-off Current(I C=0)V EB=5V2mAV CEO(sus)?Collector-EmitterSustaining Voltage(I B=0)I C=100mA100VV CE(sat)?Collector-EmitterSaturation Voltage

6、 I C=5A I B=20mAI C=10A I B=100mA23VVV BE(s at)?Base-EmitterSaturation Voltage I C=5A I B=20mAI C=10A I B=100mA2.54VVh FE?DC Current Gain I C=3A V CE=3VI C=5A V CE=3VI C=10A V CE=3V 100075010020210V F*Parallel-diode ForwardVoltage I F=5AI F=10A1.31.824VVh f e Small Signal CurrentGain I C=1A V CE=10V

7、f=1MHz20? Pulsed:Pulse duration=300s,duty cycle1.5% For PNP types voltage and current values are negative. Safe Operating AreaBDW93CFI/BDW94CFI2/4DIM.mm inch MIN.TYP.MAX.MIN.TYP.MAX.A 4.4 4.60.1730.181B 2.5 2.70.0980.106D 2.5 2.750.0980.108E 150.027F 0.7510.0300.039F1 1.15 1.70.0450.067F2 1

8、.15 1.70.0450.067G 4.95 5.20.1950.204G1 2.4 2.70.0940.106H 1010.40.3930.409L2160.630L328.630.6 1.126 1.204L49.810.60.3850.417L615.916.40.6260.645L799.30.3540.366?3 3.20.1180.126L2ABDEHGL6FL3G 1123F 2F 1L7L4ISOWATT220MECHANICAL DATAP011GBDW93CFI /BDW94CFI3/4BDW93CFI/BDW94CFIInformation furnished is b

9、elieved to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise unde

10、r any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned in this publication are subject to change without notice.This publicationsupersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.?1997SGS-THOMSON Microelectronics-Printed in Italy-All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia-Brazil-