半導(dǎo)體封裝制程與設(shè)備材料知識

1、 半導(dǎo)體前段晶圓wafer制程 半導(dǎo)體后段封裝測試 封裝前段（B/G-MOLD）封裝后段（MARK-PLANT）測試 封裝就是將前製程加工完成後所提供晶圓中之每 一顆IC晶粒獨(dú)立分離，並外接信號線至導(dǎo)線架上 分離而予以包覆包裝測試直至IC成品。 Oxidization (氧化處理) Lithography (微影) Etching (蝕刻) Diffusion Ion Implantation (擴(kuò)散離子植入) Deposition (沉積) Wafer Inspection (晶圓檢查) Grind & Dicing (晶圓研磨及切割) Die Attach (上片) WireBonding

2、 (焊線) Molding (塑封) Package (包裝) Wafer Cutting (晶圓切斷) Wafer Reduce (晶圓減薄) Laser Cut & package saw (切割成型) Testing (測試) Laser mark (激光印字) IC制造制造開始開始 前段結(jié)束前段結(jié)束后段封裝開始后段封裝開始 製造完成製造完成 IC封裝型式可以分為兩大類，一為引腳插入型，另一為表面黏著型 構(gòu)裝型態(tài)構(gòu)裝名稱常見應(yīng)用產(chǎn)品 Single In-Line Package (SIP） Power Transistor Dual In-Line Package (DIP） SRAM,

3、 ROM, EPROM, EEPROM, FLASH, Micro controller Zigzag In-Line Package (ZIP） DRAM, SRAM Small Outline Package (SOP） Linear, Logic, DRAM, SRAM Plastic Leaded Chip Carrier (PLCC） 256K DRAM, ROM, SRAM, EPROM, EEPROM, FLASH, Micro controller Small Outline Package (SOJ） DRAM, SRAM, EPROM, EEPROM, FLASH Quad

4、 Flat Package (QFP）Microprocessor BALL Grid Array (BGA）Microprocessor Through Hole Mount Shape MaterialLead PitchNo of I/O Typical Features Ceramic Plastic 2.54 mm (100miles) 8 64 DIP Dual In-line Package Plastic 2.54 mm (100miles) 1 direction lead 325 SIP Single In-line Package Through Hole Mount S

5、hape MaterialLead PitchNo of I/O Typical Features Plastic 2.54 mm (100miles) 1 direction lead 1624 ZIP Zigzag In-line Package Plastic 1.778 mm (70miles) 20 64 S-DIP Shrink Dual In-line Package Through Hole Mount Shape MaterialLead PitchNo of I/O Typical Features Ceramic Plastic 2.54 mm (100miles) ha

6、lf-size pitch in the width direction 2432 SK-DIP Skinny Dual In-line Package Ceramic Plastic 2.54 mm (100miles) PBGA Pin Grid Array Surface Mount Shape MaterialLead PitchNo of I/O Typical Features Plastic 1.27 mm (50miles) 2 direction lead 8 40 SOP Small Outline Package Plastic 1.0, 0.8, 0.65 mm 4 d

7、irection lead 88200 QFP Quad-Flat Pack Surface Mount Shape MaterialLead PitchNo of I/O Typical Features Ceramic 1.27, 0.762 mm (50, 30miles) 2, 4 direction lead 2080 FPG Flat Package of Glass Ceramic 1.27,1.016, 0.762 mm (50, 40, 30 miles) 2040 LCC Leadless Chip Carrier Surface Mount Shape MaterialL

8、ead PitchNo of I/O Typical Features Ceramic 1.27 mm (50miles) j-shape bend 4 direction lead 18124 PLCC Plastic Leaded Chip Carrier Ceramic0.5 mm32200 VSQF Very Small Quad Flatpack Die Cure (Optional) Die BondDie SawPlasma Card AsyMemory TestCleanerCard Test Packing for Outgoing Detaping (Optional) G

9、rinding (Optional) Taping (Optional) Wafer Mount UV Cure (Optional) Laser markPost Mold CureMoldingLaser CutPackage Saw Wire Bond SMT (Optional) TesterDigitalCredenceSC312 DigitalTeradyneJ750 Mix-SignalCredenceQuartet one and one+ Mix-SignalHPHP93000 P600 Mix-SignalHPHP93000 C400 Mix-SignalTeradyneC

10、atalyst RFHPHP94000 Flash & SRAM CredenceKalos Mix-SignalYokogawa HandlerBGA/QFPSeiko EpsonNS-6000 ProberWaferTSKTSK200/UF300 Lead Scanner BGA/QFPRVSILS/GS5700 Tape & ReelBGAReel Tech MTTR3000 SocketBGA/MLFJohnstech Burn-InBGA/MLFSSEB1120M SOP-Standard Operation Procedure FMEA- Failure Mode Effect A

11、nalysis SPC- Statistical Process Control DOE- Design Of Experiment IQC/OQC-Incoming/Outing Quality Control MTBA/MTBF-between assit/Failure UPH-Units Per Hour CPK-品質(zhì)參數(shù) 1.GRINDING 工藝 l 研磨 1 . 研磨分為粗磨與細(xì)磨,晶圓粗糙度需小於0.08um. 2 . 細(xì)磨厚度在1020um之間,而二次研磨參數(shù)中,細(xì)磨厚度為 15um(二次研磨變更作業(yè)膠膜為230um). 3. 研磨標(biāo)準(zhǔn)厚度: a. HSBGA :1113MI

12、L 標(biāo)準(zhǔn)研磨厚度為 12MIL b. PBGA : 1116MIL 標(biāo)準(zhǔn)研磨厚度為12MIL. c. LBGA : 9.510.5MIL 標(biāo)準(zhǔn)研磨厚度為 10MIL. 5.研磨時機(jī)器會先量側(cè)晶片厚度以此為初始值 , 粗磨厚度及最 終厚度(即細(xì)磨要求的厚度). Spindle1 粗磨 spindle2 細(xì)磨 清洗區(qū) 離心 除水 離心除水 背面朝上 Wafer 研磨時晶圓與 SPINDLE轉(zhuǎn)向 2.Grinding 相關(guān)材料 A TAPE麥拉 B Ginding 砂輪 C WAFER CASSETTLE TAPE種類: a. AD WILL D-575 UV膠膜 (黏晶片膠膜 白色)厚度 150U

13、M b. AD WILL -295黏晶片膠膜黑色厚度120UM c. AD WILL S-200 熱封式膠帶(去膠膜膠帶)白色 厚度 d. FURUKAWA UC-353EP-110AP(PRE-CUT) UV膠膜 白色 厚度110um e. FURUKAWA UC-353EP-110A UV膠膜白色厚110um f. FURUKAWA UC-353EP-110BP UV TAPE 白色厚110um. g. AD WILL G16 P370 黑色厚80UM. h. NITTO 224SP 75UM 3.Grinding 輔助設(shè)備 A Wafer Thickness Measurement 厚度

14、測量儀 一般有接觸式和非接觸式光學(xué)測量儀兩種； B Wafer roughness Measurement 粗糙度測量儀 主要為光學(xué)反射式粗糙度測量方式； 4.Grinding 配套設(shè)備 A Taping 貼膜機(jī) B Detaping 揭膜機(jī) C Wafer Mounter 貼膜機(jī) T Taping aping 需確認(rèn)wafer是否有破片或污染或者有氣泡等等現(xiàn)象.特別是 VOID；上膠膜後容易發(fā)生的defect為龜裂或破片； 切割 正面 上膠 上膠 電腦偵測方 向 取出 背面朝 下 D Detapingetaping l Wafer mount Wafer frame 1.Dicing 設(shè)備介

15、紹 A DISCO 641/651 系列 B ACCERTECH 東京精密200T/300T Blade Close-View Blade Cutting WaterN ozzle Cooling Water Nozzle Twin-Spindle Structure Rear Front X-axis speed: up to 600 mm/s Cutting speed: up to 80 mm/s 2.Dicing 相關(guān)工藝 A Die Chipping 芯片崩角 B Die Corrosive 芯片腐蝕 C Die Flying 芯片飛片 Wmax , Wmin , Lmax , DD

16、Y ,DY 規(guī)格 DY 0.008mmWmax 0.070mmWmin 0.8*刀 厚Lmax 80 o 8 o Organic Contamination vs Contact Angle Water Drop Chip Chip 設(shè)備介紹 A TOWA Y1-SERIES B ASA ONEGA 3.8 Towa Auto Mold Training 機(jī)器上指示燈的說明：機(jī)器上指示燈的說明： 1、綠燈機(jī)器處于正常工作狀態(tài)； 2、黃燈機(jī)器在自動運(yùn)行過程中出現(xiàn)了報警提示，但機(jī)器不會立即停機(jī)； 3、紅燈機(jī)器在自動運(yùn)行過程中出現(xiàn)了故障，會立即停機(jī)，需要馬上處理。 機(jī)器結(jié)構(gòu)了解機(jī)器結(jié)構(gòu)了解正面正面 指示燈 主機(jī) Tablet 壓機(jī) 人機(jī)界面 緊急停機(jī)按鈕緊急停機(jī)按鈕 Towa Auto Mold Training 機(jī)器結(jié)構(gòu)了解機(jī)器結(jié)構(gòu)了解背面背面 CULL BOX 用來裝切下來的料餅； OUT MG 用來裝封裝好的L/F； 配電柜用來安裝整個模機(jī)的電源和PLC，以及伺服電