電子束熔煉冶金級硅除鋁研究

1、246Vol.24No.6December2010201012CHINESEJOURNALOFMATERIALSRESEARCH1,21,21,21,21,211.2.116024116204Al,Al,ICPAES(1×105%)AlLangmuirHenryAl,Al,TF114.171005-3093(2010)06-0592-05AluminumEvaporationfromMetallurgicalSiliconinElectronBeamMeltingProcessDONGWei1,2WANGQiang1,2PENGXu1,2TANYi1,2JIANGDachuan1,2

2、LIGuobin11.KeyLaboratoryforSolarEnergyPhotovoltaicofLiaoningProvince,Dalian1162042.SchoolofMaterialsScienceandEngineering,DalianUniversityofTechnology,Dalian116024)ManuscriptreceivedApril19,2010;inrevisedformJuly29,2010.*Towhomcorrespondenceshouldbeaddressed,Tel:(0411)84707583,Email:tanyiABSTRACTMet

3、allurgicalgradesiliconwaspuriedbyelectronbeammelting(EBM)method.Thedistributionofaluminumintheingotwasfoundthataluminumwasdraggedfromthebottomtothetopandfromtheedgetothecenteroftheingot.Thealuminumcontentintheedgewasthelowest,evenlowerthanthedetectionlimit(1×105%)ofICPAES.Theevaporationofalumin

4、umduringEBMprocesswasstudiedboththeoreticallyandexperimentally.TherelationshipbetweentheremovaleciencyforaluminumandthesurfacetemperatureofthemeltingsiliconandmeltingtimewasdeducedfromLangmuir󰀂sequationandHenrylaw.Itshowedthattheremovaleciencyofimpurityaluminumincreasedwiththeincreaseoftheme

5、ltingtimeandthesurfacetemperatureofthemeltingsilicon.Goodagreementwasfoundbetweenthecalculatedvalueandthemeasuredvalue.KEYWORDSinorganicnonmetallicmaterials,silicon,electronbeammelting,segregation,evapora-tion(SOGSi)3Morita4,(MGSi)MGSiAlSOGSiSOGSi1,SOGSi,SOGSi2,AlAl,Al2×103,SOGSiAlFe,Al,Al20104

6、19;2010729(EBM),:,6:5935Ikeda6EBMMGSi,30minCAlPCa,7HanazawaP,150kg3%P2.5×101×105%EBMP7,EBMAlEBMMGSi,Al,Al1SEBM30A,30kW199.8%()MGSi,Al33.1×10%,40min5×102Pa35×10Pa;,30kV,15kW,;30min1Fig.1Schematicimageoftheexperimentalappara-tusSKY150Optima2000DV(ICPAES)2.1Al500g15kW3.6ks,120m

7、m25mm;490g,10gSKY1501cm,6EBMAl3a,EBM,Al54×10%;1.3×103%3bAlAl,Al,ICPAES(1×105%),k08,k0=CS/CL(1),CsClk0<1,Al2×103,1,Al,AlFig.2Schematicillustrationofthesamplepositionsforchemicalanalysis59424Henry,PAl=NAl·Al·PAl(3)NAlAl;AlAl0;PAlAl(Pa)Hanazawa7/Al,AlAl,JAlA=AVSidNAl

8、83;MSidt(4)(cm3);(cm2);VSi(g/cm3)(3)(2)(4):(5)AMSitNAlAlP·=exp()NAl0AlVSi,NAl0AlAl(a);(b),Fig.3Aluminumdistributionalong(a)verticaland(b)radialdirectionsintheingotNiCi·MSi/100Mi10,Al():Al=1CAlNAl1CAl0NAl0(6)3.2Al,Langmuir9,PiJi=i0AMSitAlP·=1exp()AlVSi(2)(7),AlPAltTAlJii(mol/m2·s)

9、;PiAlTAli(Pa);Mii(Kg/mol);R111,12Al(6)(J/mol·K);T(K)PAl,t,Al,T1Table1ParametersusedinthecalculationParameterActivitycoecient,Al0Vaporpressure,PAlValue0lnAl(l)=3610/T+0.4520=16380/TlogTlogT+14.445logPAlUnitPaksgg/cm3cm2Kg/molKg/molMeltingTime,tWeightlost,mSiDensity,SiSurfacearea,AAtomicweightofa

10、luminum,MAlAtomicweightofsilicon,MSi3.6102.33131.312.70×1022.81×1026:595(6)Al,Al,Al;,Al7200s,Al1600K7.9%1900K97.5%,Al5,Al,Al2000K,Al300s57.0%1000s94.0%Al,EBM,;,EBM,HertzKnudsenLangmuir7:VSi=4.37×104·PSi·(MSi/T)1/2(7)SiV(Kg·m2/s);MSi(Kg/mol);T(K);PSi(Pa),12logPSi0=20900/

11、T0.565×logT+12.9(8)1(7)(8)1932K(6)1Al99.37%AlAlAlEBMAl,3Al,EBMAl88.93%,5,EBMAlAlFig.4Dependenceofremovaleciencyofaluminumonsurfacetemperature5AlFig.5Dependenceoftheremovaleciencyofalu-minumonthemeltingtime6AlFig.6Comparisonofcalculatedandmeasuredre-movalecienciesofaluminum15kW,Al6,Al;,Al596:(1)

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