工學(xué)英語(yǔ)班電力電子技術(shù)PPT教案

1、會(huì)計(jì)學(xué)1工學(xué)英語(yǔ)班電力電子技術(shù)工學(xué)英語(yǔ)班電力電子技術(shù)devices2.6 Power integrated circuits and integrated power electronics modules第1頁(yè)/共95頁(yè)第2頁(yè)/共95頁(yè)n Major material used in power semiconductor devices Silicon第3頁(yè)/共95頁(yè)p=vi=0Off-stateCurrent through the device is 0i=0p=vi=0On-stateVoltage across the device is 0v=0第4頁(yè)/共95頁(yè)packaging

2、 and heat sink are necessary.第5頁(yè)/共95頁(yè)O n -s ta te(c o n d u c tio n s ta te )tu rn in g -o ffO ff-s ta te(b lo c k in g s ta te )tu rn in g-o ntttv vi ip p第6頁(yè)/共95頁(yè)Control circuitDetection(measurement)circuitdrivecircuitPower circuit(power stage,main circuit)Control circuit (in a broad sense)Power el

3、ectronic system:Electric isolation:optical or magnetic Protection circuit is also very often used in power electronic system especially for the expensive power semiconductors.第7頁(yè)/共95頁(yè)CEGA power electronic device must have at least two terminals allowing power circuit current flow through.A power ele

4、ctronic device usually has a third terminal control terminal to control the states of the device.Drive Circuit第8頁(yè)/共95頁(yè)has only two terminals and can not be controlled by control signal. The on and off states of the device are determined by the power circuit.is turned-on by a control signal and turne

5、d-off by the power circuitThe on and off states of the device are controlled by control signals.第9頁(yè)/共95頁(yè)第10頁(yè)/共95頁(yè)第11頁(yè)/共95頁(yè)passive components by power electronic circuits could be very different from those by ordinary circuits.第12頁(yè)/共95頁(yè)CathodeAnodeAnodeCathode第13頁(yè)/共95頁(yè)-。-。-。-。-。-。-。-。-。-。-。-。-。-。-。+-

6、+-+-+-+-p regionn regionDirection ofinner electric fieldSpace charge region(depletion region,potential barrier region)第14頁(yè)/共95頁(yè)V+-npWoW+-第15頁(yè)/共95頁(yè)第16頁(yè)/共95頁(yè)Larger size Vertically oriented structure n drift region (p-i-n diode) Conductivity modulation250mBreakdown voltage dependent10 mpNd=10 cmn subst

7、rate-319Na=10 cm-319+n epiNd=10 cm-314pNd=10 cmn substrate-319+Na=10 cm-319+n epi-Nd=10 cm-314iAnodeCathode+-V-第17頁(yè)/共95頁(yè)第18頁(yè)/共95頁(yè)Avalanche breakdown Thermal breakdown第19頁(yè)/共95頁(yè)power diode.第20頁(yè)/共95頁(yè)IOIFUTOUFU第21頁(yè)/共95頁(yè)Reverse-recovery time, reverse-recovery charge, reverse-recovery peak current.a)IFUFt

8、Ft0trrtdtft1t2tURURPIRPdiFdtdiRdt第22頁(yè)/共95頁(yè)forward-recovery timeb)UFPuiiFuFtfrt02V第23頁(yè)/共95頁(yè)第24頁(yè)/共95頁(yè)standard recoveryReverse recovery time and charge specified. trr is usually less than 1s, for many less than 100 ns ultra-fast recovery diode. A majority carrier device Essentially no recovered charge,

9、 and lower forward voltage. Restricted to low reverse voltage and blocking capability (less than 200V)第25頁(yè)/共95頁(yè)第26頁(yè)/共95頁(yè)general purpose diodes.第27頁(yè)/共95頁(yè)highest power-handling capability. 第28頁(yè)/共95頁(yè)KGA第29頁(yè)/共95頁(yè)第30頁(yè)/共95頁(yè)第31頁(yè)/共95頁(yè))(121CBO2CBO1G2AIIII第32頁(yè)/共95頁(yè)第33頁(yè)/共95頁(yè)OUAkIAIHIG2IG1IG=0UboUDSMUDRMURRMURS

10、Mincreasing IG第34頁(yè)/共95頁(yè)100%90%10%uAKttO0tdtrtrrtgrURRMIRMiA第35頁(yè)/共95頁(yè)第36頁(yè)/共95頁(yè)IOUIG=0KGAAGKGKAGT1T2第37頁(yè)/共95頁(yè)第38頁(yè)/共95頁(yè)AGKGGKN1P1N2N2P2b)a)forms being used to layout the gates and cathodes.GKA第39頁(yè)/共95頁(yè)turn-off capability.nLarge 2n1+2 is just a little larger than the critical value 1. nShort distance fr

11、om gate to cathode makes it possible to drive current out of gate.RNPNPNPAGSKEGIGEAIKIc2Ic1IAV1V2第40頁(yè)/共95頁(yè)Ot0t圖1-14iGiAIA90% IA10% IAtttftstdtrt0t1t2t3t4t5t6第41頁(yè)/共95頁(yè)第42頁(yè)/共95頁(yè)bec第43頁(yè)/共95頁(yè)第44頁(yè)/共95頁(yè)holeselectronsEbEcibic=ibie=(1+ib第45頁(yè)/共95頁(yè)cut-off regionAmplifying (active) regionOIib3ib2ib1ib1ib2ib3Uc

12、eSaturation region第46頁(yè)/共95頁(yè)圖1-17ibIb1Ib2Icsic0090%Ib110%Ib190%Ics10%Icst0t1t2t3t4t5tttofftstftontrtd第47頁(yè)/共95頁(yè)第48頁(yè)/共95頁(yè)S O AOIcIcMPS BPcMUceUceM第49頁(yè)/共95頁(yè)GSDP channelGSDN channel第50頁(yè)/共95頁(yè)第51頁(yè)/共95頁(yè)np-n- junction is reverse-biasednoff-state voltage appears across n- region第52頁(yè)/共95頁(yè)np- n- junction is sli

13、ghtly reverse biasednpositive gate voltage induces conducting channelndrain current flows through n- region and conducting channelnon resistance = total resistances of n- region, conducting channel,source and drain contacts, etc.第53頁(yè)/共95頁(yè)第54頁(yè)/共95頁(yè)RsRGRFRLiDuGSupiD+UE第55頁(yè)/共95頁(yè)topology, control, snubb

14、er circuit and the parasitic of the power circuit.第56頁(yè)/共95頁(yè)第57頁(yè)/共95頁(yè)第58頁(yè)/共95頁(yè)nUsually used at voltages less than 600V and power less than 10kWn1000V devices are available, but are useful only at low power levels(100W)nPart number is selected on the basis of on-resistance rather than current rating第5

15、9頁(yè)/共95頁(yè)第60頁(yè)/共95頁(yè)第61頁(yè)/共95頁(yè)EGCN+N-a)PN+N+PN+N+P+EmitterGateCollectorInjecting layerBuffer layerDrift regionJ3J2J1第62頁(yè)/共95頁(yè)GEC+-+-+-IDRNICVJ1IDRonDrift regionresistanceGCE第63頁(yè)/共95頁(yè)OActive regionCut-off (forwardblocking) regionSaturation region(On region)Reverseblocking regionICURMUFMUCEUGE(th)UGE第64頁(yè)/共

16、95頁(yè)nIGBT turn-on is similar to power MOSFET turn-onnThe major difference between IGBT turn-off and power MOSFET turn-off:nThere is current tailing in the IGBT turn-off due to the stored charge in the drift region.第65頁(yè)/共95頁(yè)nModern IGBTs are essentially latch-up proof第66頁(yè)/共95頁(yè)nSOA of IGBTnThe IGBT has

17、 a rectangular SOA with similar shape to the power MOSFET.nUsually fabricated with an anti-parallel fast diode第67頁(yè)/共95頁(yè)第68頁(yè)/共95頁(yè)第69頁(yè)/共95頁(yè)第70頁(yè)/共95頁(yè)第71頁(yè)/共95頁(yè)nOnce believed as the most promising device, but still not commercialized in a large scale. The future remains uncertain. 第72頁(yè)/共95頁(yè)第73頁(yè)/共95頁(yè)Band

18、gapE E4E E3E E2E E1第74頁(yè)/共95頁(yè)610/V cm2/cmV S C第75頁(yè)/共95頁(yè)P(yáng)hysical Properties of Silicon Carbide第76頁(yè)/共95頁(yè)第77頁(yè)/共95頁(yè)Wafer Production第78頁(yè)/共95頁(yè)Infineon SiC overviewnUnipolar devicesExisting products: Diode based: 300V 1200V (1700V can be realized on demand)Under development: JFET based: 600V 1500V (discrete

19、, cascodes in modules) Expansion to higher voltage classes (single chip / super-cascode) possiblenBipolar devicesNo development activities at IFXSolid volume forecasts and cost targets required第79頁(yè)/共95頁(yè)第80頁(yè)/共95頁(yè)Integrationof power electronic devicesSmart power integrated circuit (Smart power IC, SPIC, Smart switch)High voltage integrated circuit (HVIC) Ordinary power module:just power devices packaged togetherIntegrated power electronics Module(IPEM): power devices, drive circuit, protection circuit, control circuitIntelligent power module (IPM):power devices, drive circuit, protection circu