材料物理課件 (5)半導(dǎo)體器件原理

1、 Semiconductive Devices1, Semiconductive diode1), StructuresSpot contactPNFace contactPNSymbol： 2),I-V characteristicsUIStartup Voltage: Si:0.6V,Ge:0.2V。Operating Voltage:Si:0.60.7V,Ge:0.20.3V。Reverse saturated Voltage :UBR3) Some parameters A) maximal operating current: IOMB) Reverse saturated Volt

2、age :UBRC) Reverse Current: IRD) Differential resistance rDiDuDIDUDQiDuDD) Capacitance in diodeIncluding：Barrier Capacitance CB and Diffusion Capacitance CD。CB ：Produced by the change of space charge under the variational voltage。CD ：Produced by the change of the minority carrier under the variation

3、al voltage。P+-NrdRLuiuouiuottApplication example 1：Half-wave rectifierApplication example 2：tttuiuRuoRRLuiuRuo4) Some special diodesA) Zener diodeB) Photoelectrical diodeIULight IntensityIncreased C) Light-emitting diode2, Semiconductive dynatron(Bipolar Junction Transistor) 1) StructureBE(Emitter)C

4、(Collector)NNP(Base)NPNPNPBCEPNPCurrent amplificatory multipleNote: BE junction under forward bias and CB junction under reverse bias. B(Base)E(emitter)C(collector)IBIEICNPNBECIBIEICPNP2) I-V CurveICmAAVVUCEUBERBIBECEBInput characteristicsUCE 1VIB(A)UBE(V)204060800.40.8Operating Voltage： Si:UBE0.60.

5、7V,Ge:UBE0.20.3V。UCE=0VUCE =0.5V dead zone voltage Si 0.5V，Ge 0.2V。Output characteristics IC(mA )1234UCE(V)36912IB=020A40A60A80A100AIC=IBIC(mA )1234UCE(V)36912IB=020A40A60A80A100AUCEUBE, ，IBIC，UCE0.3VIC(mA )1234UCE(V)36912IB=020A40A60A80A100AIB=0,IC=ICEO,UBE0, UCE 0, UCE 0; UCEUBE ， IBIC，UCE0.3V (3) Blocked Zone： UBE00IDUGSVTN channel exhausted output characteristicsIDU DS0UGS=0UGS03,Thin film transisto