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ESDProtection
DesignSeminar
JimSutherland
SeniorApplicationsEngineerESDProtection
DesignSeminarOutline
WhatisESD?Whatdamagecanitcause?Whyistheproblemgrowing?Whataretheissuesforthedesigner?Howcanwemeasureit?HowcanweprotectequipmentfromESD?OutlineWhatisESD?WhatIsESD?ESD=ElectroStaticDischargeGenerationTriboelectric(frictioncausesaccumulationofcharge)Induction(fieldinducescharge)DischargeDielectric(air)breakdownElectricfieldincreaseswhenchargedbodiesapproacheachotherCurrentflowintocircuitryWhatIsESD?ESD=ElectroStatESDDamageofICsPermanentOxidebreakdown,shorts,opens,latch-upTemporaryLatch-up,groundbounceLatentDegradationfromanESDeventESDDamageofICsPermanent
ESDproblemisgrowingCircuits/SystemsOld-RobustICs&LowspeedsignalsNew-SensitiveICs&HighspeedsignalsEnvironmentOld-Manufacturing/CorporateNew-Home/Outdoors/PersonESDproblemisgrowingCircuitESDIssuesfortheDesignerMustmeetESDspecificationsSelectESDtolerantcomponentsMinimizesignaldegradation(fromR,L&C)Boardspace/weight/properdesignComponentcostAssemblycostLifetimecost(stability)TestthesystemESDIssuesfortheDesignerMuInternationalESDStandardsHumanBodyModel(HBM)-fordevicesEIA/JESD22-A114-AANSI/EOS/ESD-S5.1-1993MIL-STD-883(method3015)IEC1000-4-2:1995-forsystemsMachineModel(MM)-lesscommonEIA/JESD22-A115-AANSI/EOS/ESD-S5.1-1993ChargeDeviceModel(CDM)-lesscommonJESD22-c101InternationalESDStandardsHumHumanBodyModel(HBM)Dischargefrom100pFcapacitorthrough1.5kOhmresistor6ESDpulses3positive,3negative>1secseparationPin-to-pintestingN(N-1)/2combinationsUsedforcomponentcharacterizationWidelyusedHumanBodyModel(HBM)DischargHBMCurrentWaveformRiseTime:2nS<Tr<10nSHBMCurrentWaveformRiseTime:IEC1000-4-2:1995StandardDischargefrom150pFcapacitorthrough330ohmresistor6ESDpulses3positive,3negativeUsedforsystemcharacterization“Contact”v.“Air”dischargeDifferentlevelsDifferentapplicationsIEC1000-4-2:1995StandardDiscIEC1000-4-2CurrentWaveformVeryfastrisetime:Tr<1nS60nsIEC1000-4-2CurrentWaveformVIEC1000-4-2TestLevelsContactdischargeisthepreferredtestmethod-airdischargesarenotrepeatableAirdischargesusedwherecontactdischargecannotbeappliedNoimpliedequivalenceintestseveritybetweenthetwotestmethodsIEC1000-4-2TestLevelsContacIEC1000-4-2BenchTestSpecificationIEC1000-4-2BenchTestSpecifESDProtectionTechniquesClampdiodesinICNotsufficientprotection
Shielding
LoweffectivenessBypasscapacitororseriesresistor/inductorCandegradesignal;manycomponents;largeboardareaSparkgapLowcost;lowstability;largeboardareaDiscreteZenerdiodesHighcapacitance,manycomponents;largeboardareaDiscretePNdiodesLowcapacitance;manycomponents;largeboardareaIntegratedPNdiodesESDProtectionTechniquesClampIntegratedDiodeNetworksSuperiordownstreamESDprotectionHighspeedresponseESDcurrentsteeredtoGNDorVCCMinimumSignalDegradation(LowC)Minimalboardspace,weightLowassembly/manufacturingcostsMinimalDesign-InTimeLong-termreliabilityIntegratedDiodeNetworksSuperChoosinganESDDiodeNetworkHowmanylinesareneeded?Howmuchcapacitance?(e.g.<5pF)WhatistheHBMrating?(e.g.±15kV)Whatisthedownstreamclampvoltage?(e.g.13V@15kVHBMpulse)Whatisthecontactdischargerating?(e.g.±8kV)Whatistheairdischargerating?(e.g.±15kV)Whatpackage?(e.g.24-pinQSOP)ChoosinganESDDiodeNetworkHESDDiodeNetworkPlacementTheNeedtoKeepESDDiodesDownstreamofLineInductancesAlsoputprotectiondiodesatmostlikelyESDentrypoint-theconnectorPreferredLayoutESDEntryPointParasiticLVccGndProtectedDevicePoorlayout-increasedclampvoltageduetoparasiticinductanceParasiticLVccGndProtectedDeviceESDEntryPointESDDiodeNetworkPlacementTheDesigningforMinimalPower
RailInductanceDesigningforMinimalPower
RaAddBypassCapacitorPlaceCeramicbypasscapacitor(0.1~0.2uF)ascloseaspossibletoESDdiodenetworkpowerrailtoshuntESDcurrenttobothpowerrailsMaybeaddZenerinparallelwithcapacitortominimizeparasiticinductanceofbypasscapacitorProtectedDeviceGndVccCAddBypassCapacitorPlaceCeraUsingaSeriesResistorto
MinimizeDownstreamCurrentCanbeconsideredforlatch-upsensitiveapplicationsGuaranteedclampingvoltagelimitscurrentdownstream(I=V/R)OnlyforinputswithhighZOnlyforoutputdriverswithlowZwatchoutforfilteringofsignalUsingaSeriesResistorto
MinPower-downIssuesDiodeprotectedsystemsthatarepowereddowncandraincurrentfromanactivehighinputthroughthediodetoVCCThiscandrainbatteriesand/ordamagedevicesonthesamelineToavoidthis,isolateVCCfromthebypasscapacitorwithablockingdiodeOnediodesolutionPower-downIssuesDiodeprotectComponentandSystemSpecificationsThereisnosimpleformulatotranslatesystemspecificationsintocomponentspecificationsIEC1000-4-2SpecificationismoreseverethanHBMLinecapacitanceandinductanceshapetheESDpulse,reducingitspeakvaluePoordeviceplacementcandegradeperformanceIftherearemultipledevicesonaline,decidewhichtoprotectTherelationshipbetweendownstreamclampvoltageanddownstreamprotectionisnotexactComponentandSystemSpecificaValidatingtheDesignDefinethepracticallimitsoffunctionalfailure(e.g.Dataintegrity,recoverytime)TestonlyatthoseplacessubjecttotouchduringnormaloperationUseContactESDischargestocouplingplanes&conductivesurfaces,I/Opins,flexpads,andpowerpinsUseAirESDischargestoinsulatingsurfaces,openingsatedgesofkeys,flexcables,ventareas,seams,slots,aperturesValidatingtheDesignDefinethTotalSolutionCostESDfailureisaquestionofstatisticsOnecannoteliminateallreliabilityissuesGoalistominimizetotalsolutioncostCostofreliabilityCostofprotectionMustfindproperminimumTotalSolutionCostESDfailureLightningvs.ESD200MV30kA30us15kV45A80nSLightningvs.ESD200MV演講完畢，謝謝觀看！演講完畢，謝謝觀看！ESDProtection
DesignSeminar
JimSutherland
SeniorApplicationsEngineerESDProtection
DesignSeminarOutline
WhatisESD?Whatdamagecanitcause?Whyistheproblemgrowing?Whataretheissuesforthedesigner?Howcanwemeasureit?HowcanweprotectequipmentfromESD?OutlineWhatisESD?WhatIsESD?ESD=ElectroStaticDischargeGenerationTriboelectric(frictioncausesaccumulationofcharge)Induction(fieldinducescharge)DischargeDielectric(air)breakdownElectricfieldincreaseswhenchargedbodiesapproacheachotherCurrentflowintocircuitryWhatIsESD?ESD=ElectroStatESDDamageofICsPermanentOxidebreakdown,shorts,opens,latch-upTemporaryLatch-up,groundbounceLatentDegradationfromanESDeventESDDamageofICsPermanent
ESDproblemisgrowingCircuits/SystemsOld-RobustICs&LowspeedsignalsNew-SensitiveICs&HighspeedsignalsEnvironmentOld-Manufacturing/CorporateNew-Home/Outdoors/PersonESDproblemisgrowingCircuitESDIssuesfortheDesignerMustmeetESDspecificationsSelectESDtolerantcomponentsMinimizesignaldegradation(fromR,L&C)Boardspace/weight/properdesignComponentcostAssemblycostLifetimecost(stability)TestthesystemESDIssuesfortheDesignerMuInternationalESDStandardsHumanBodyModel(HBM)-fordevicesEIA/JESD22-A114-AANSI/EOS/ESD-S5.1-1993MIL-STD-883(method3015)IEC1000-4-2:1995-forsystemsMachineModel(MM)-lesscommonEIA/JESD22-A115-AANSI/EOS/ESD-S5.1-1993ChargeDeviceModel(CDM)-lesscommonJESD22-c101InternationalESDStandardsHumHumanBodyModel(HBM)Dischargefrom100pFcapacitorthrough1.5kOhmresistor6ESDpulses3positive,3negative>1secseparationPin-to-pintestingN(N-1)/2combinationsUsedforcomponentcharacterizationWidelyusedHumanBodyModel(HBM)DischargHBMCurrentWaveformRiseTime:2nS<Tr<10nSHBMCurrentWaveformRiseTime:IEC1000-4-2:1995StandardDischargefrom150pFcapacitorthrough330ohmresistor6ESDpulses3positive,3negativeUsedforsystemcharacterization“Contact”v.“Air”dischargeDifferentlevelsDifferentapplicationsIEC1000-4-2:1995StandardDiscIEC1000-4-2CurrentWaveformVeryfastrisetime:Tr<1nS60nsIEC1000-4-2CurrentWaveformVIEC1000-4-2TestLevelsContactdischargeisthepreferredtestmethod-airdischargesarenotrepeatableAirdischargesusedwherecontactdischargecannotbeappliedNoimpliedequivalenceintestseveritybetweenthetwotestmethodsIEC1000-4-2TestLevelsContacIEC1000-4-2BenchTestSpecificationIEC1000-4-2BenchTestSpecifESDProtectionTechniquesClampdiodesinICNotsufficientprotection
Shielding
LoweffectivenessBypasscapacitororseriesresistor/inductorCandegradesignal;manycomponents;largeboardareaSparkgapLowcost;lowstability;largeboardareaDiscreteZenerdiodesHighcapacitance,manycomponents;largeboardareaDiscretePNdiodesLowcapacitance;manycomponents;largeboardareaIntegratedPNdiodesESDProtectionTechniquesClampIntegratedDiodeNetworksSuperiordownstreamESDprotectionHighspeedresponseESDcurrentsteeredtoGNDorVCCMinimumSignalDegradation(LowC)Minimalboardspace,weightLowassembly/manufacturingcostsMinimalDesign-InTimeLong-termreliabilityIntegratedDiodeNetworksSuperChoosinganESDDiodeNetworkHowmanylinesareneeded?Howmuchcapacitance?(e.g.<5pF)WhatistheHBMrating?(e.g.±15kV)Whatisthedownstreamclampvoltage?(e.g.13V@15kVHBMpulse)Whatisthecontactdischargerating?(e.g.±8kV)Whatistheairdischargerating?(e.g.±15kV)Whatpackage?(e.g.24-pinQSOP)ChoosinganESDDiodeNetworkHESDDiodeNetworkPlacementTheNeedtoKeepESDDiodesDownstreamofLineInductancesAlsoputprotectiondiodesatmostlikelyESDentrypoint-theconnectorPreferredLayoutESDEntryPointParasiticLVccGndProtectedDevicePoorlayout-increasedclampvoltageduetoparasiticinductanceParasiticLVccGndProtectedDeviceESDEntryPointESDDiodeNetworkPlacementTheDesigningforMinimalPower
RailInductanceDesigningforMinimalPower
RaAddBypassCapacitorPlaceCeramicbypasscapacitor(0.1~0.2uF)ascloseaspossibletoESDdiodenetworkpowerrailtoshuntESDcurrenttobothpowerrailsMaybeaddZenerinparallelwithcapacitortominimizeparasiticinductanceofbypasscapacitorProtectedDeviceGndVccCAddBypassCapacitorPlaceCeraUsingaSeriesResistorto
MinimizeDownstreamCurrentCanbeconsideredforlatch-upsensitiveapplicationsGuaranteedclampingvoltagelimitscurrentdownstream(I=V/R)OnlyforinputswithhighZOnlyforoutputdriverswithlowZwatchoutforfilteringofsignalUsingaSeriesResistorto
MinPower-downIssuesDiodeprotectedsystemsthatarepowereddowncandraincurrentfromanactivehighinputthroughthediodetoVCCThiscandrainbatteriesand/ordamagedevicesonthesamelineToavoidthis,isolateVCCfromthebypasscapacitorwithablockingdiodeOnediodesolutionPower-downIssuesDiodepro
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