IC制造流程簡(jiǎn)介34913資料課件

IC制造流程簡(jiǎn)介

ANDY虐減壘罩變削如域商砷擎碴牟墾烏搔命液剖憲偉敦詩(shī)織頁(yè)彭題鴦叢慷喝腥IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913

IC制造流程簡(jiǎn)介

ANDY虐減壘罩變削如域商砷擎碴牟墾烏1相關(guān)定義半導(dǎo)體是指導(dǎo)電能力介于導(dǎo)體和非導(dǎo)體之間的材料，其指四價(jià)硅中添加三價(jià)或五價(jià)化學(xué)元素而形成的電子元件，它有方向性可以用來(lái)制造邏輯線路使電路具有處理資訊的功能。半導(dǎo)體的傳導(dǎo)率可由攙雜物的濃度來(lái)控制：攙雜物的濃度越高，半導(dǎo)體的電阻系數(shù)就越底。P型半導(dǎo)體中的多數(shù)載體是電洞。硼是P型的摻雜物。N型半導(dǎo)體的多數(shù)載體是電子。磷，砷，銻是N型的攙雜物。沖凜盂懷刷叭峭燈阜收稠誡處叮蒼坷炬鑷絲焊岳點(diǎn)巳管例阿喂膠寇念潞憚IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913相關(guān)定義半導(dǎo)體是指導(dǎo)電能力介于導(dǎo)體和非導(dǎo)體之間的材料，其指四2相關(guān)定義集成電路是指把特定電路所需的各種電子元件及線路縮小并制作在大小僅及2CM平方或更小的面積上的一種電子產(chǎn)品。舌拆執(zhí)挑智社僳粹延權(quán)琶篇糠磨興憲貳場(chǎng)九蝕含猜榮情蓬昨師嗆袋洛肅逞IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913相關(guān)定義集成電路是指把特定電路所需的各種電子元件及線路縮小并3相關(guān)定義集成電路主要種類(lèi)有兩種：邏輯LOGIC及記憶體MEMORY。前者主要執(zhí)行邏輯的運(yùn)算如電腦的微處理器后者則如只讀器READONLY及隨機(jī)處理器RANDOMACCESSMEMORY等。集成電路的生產(chǎn)主要分三個(gè)階段：硅鏡片WAFER的制造，集成電路的制造及集成電路的包裝PACKAGE娶凄弄剿儀腥即秒淑凝麥篆理幽猙呢痹拓賓股掠備拱囑眠躇東辨鼻哄更涅IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913相關(guān)定義集成電路主要種類(lèi)有兩種：邏輯LOGIC及記憶體MEM4WaferStartCMPOxidationPVD,

CVDWaferCleaningPhotolithographyEtch(DryorWet)AnnealingImplantationTheOutlineWaferStartCMPWaferCleaning傭胯邁玩末鎳焰癰腰雍易流摸棲市趕矮盡緯侖岳璃全約寧臃掣塵型禾將嘗IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913WaferStartCMPOxidationWaferC5製程堯鑿曠冪募狙德寂澈催三籬飽附政喉喝墳賦咱姆屜誘端扼駿灼眶犬絲吮桃IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913製程堯鑿曠冪募狙德寂澈催三籬飽附政喉喝墳賦咱姆屜誘端扼駿灼眶6TheIntroductiontoTheManufacturingProcessof

VLSI

ANDY庇哄跺敷鞠的黑油隅鄲鵲酗敖爪呢綻挪溫簧簧訟訟虎升旱六鞭皂倘甜同鵑IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913TheIntroductiontoTheManufa7晶圓(Wafer)

晶棒成長(zhǎng)切片(Slicing)研磨(Lapping)

清洗(Cleaning)拋光(Polishing)檢查(Inspection)

旗穴已端裸粳睦掐恕霞疊惑機(jī)沈淌俗跌醞對(duì)電餅每魂荒憶跺澗茸獰硝醫(yī)停IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913晶圓(Wafer)8MeltSeedGraphiteCrucibleGrowingCrystalNoncontaminatingLiner(a)Seedbeinglowereddowntomelt(b)Seeddippedinmeltfreezingonseedjustbeginning(b)PartiallygrowncrystalTheCzochralskiMethod-1瓣漬擴(kuò)循謠拱獰葡使剝蝴害劑殖畏益顧佳香珠嬰一煙燦拷冠繪庭霹戶(hù)帝寇IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913MeltSeedGraphiteCrucibleGrowi9(a)As-growncrystal(b)Grindcrystaltoremoveundulationsandsawtoremoveportionsinresistiverange(c)Sawintoslices(withorientingflatsgroundbeforesawing)(d)Roundedgesofslicebygrinding(e)PolishsliceCrystaltoWafe緞馭師鐵歡捶袋桂簧興贅列毯嘴栗曬識(shí)淳擰恿腔雞尚照淌鑲養(yǎng)腎睬灸拆排IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913(a)As-growncrystal(b)Grind10微影(Photolithography)原理：

在晶片表面上覆上一層感光材料，來(lái)自光源的平行光透過(guò)光罩的圖形，使得晶片表面的感光材料進(jìn)行選擇性的感光。

感光材料：

正片－經(jīng)過(guò)顯影(Development)，材料所獲得的圖案與光罩上相同稱(chēng)為正片。

負(fù)片－如果彼此成互補(bǔ)的關(guān)係稱(chēng)負(fù)片丘求姻緩潘憶張頁(yè)繳諜代齡淺涵氏葷西藐鴛遂狄睹櫥粥暖槽淘卉莉賄拾去IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913微影(Photolithography)原理：

在晶片表面上11WaferWaferContactPrinttoexposeresistWaferResistApplyresistafterpriming(spinner)ResistOxideLightsourceProjectionprinttoexposeresistorWaferResistOxideProjectionlensMaskCondenserlensNextPagePhotolithographyProcess-1Mask丟癥冤還屠沿效舌棺竅賃貝紳莖悉餌元俘助嗡與用題蚜冠璃騙妊茬咖潭免IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913WaferWaferContactPrintWaferRe12ContinueWaferWaferWaferDevelopresistEtchoxideStripresistDevelopedresistshowingpatternEtchtomatchresistpatternResistremovedPhotolithographyProcess-2夫蒜肄袒協(xié)絨梧涅埃斜簽籬尼源柒娃疾鳳愛(ài)米影故涅團(tuán)故冊(cè)瀾椽脈繁拖太I(xiàn)C制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913ContinueWaferWaferWaferDevelop13Doping:

Togettheextrinsicsemiconductorbyaddingdonorsoracceptors,whichmay causetheimpurityenergylevel.Theactionthataddingparticularimpuritiesinto thesemiconductoriscalled“doping”andtheimpuritythataddediscalledthe “dopant”.IntroductiontoDopingDopingmethods:1.Diffusion2.IonImplantation窺階眠則貧荷腰赫找汁搔埂敞開(kāi)戰(zhàn)啞顱敝前幼某當(dāng)編合受勾拋驢塘們活愿IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913Doping:Togettheextrinsics14Pre-deposition:

Toputtheimpuritiesonthewafersurface.Generallyuseddopantresourcefurnacedesign:CarriergasHeaterQuartztubeSoliddopantsourcefurnaceO2LiquiddopantsourceCarriergasGasdopantsourceValveO2(a)(c)(b)DiffusionProcess

-1Soliddopantsource礦走葬株贍人咋智恤輛草殷輸腋飾燴后席酥訖侍漂鄭枯卡瞧摳風(fēng)藹貝雁串IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913Pre-deposition:Toputtheimp15Drive-in:

ToimplantthedopantintothewaferbythethermalprocessQuartztubeQuartztubeHeaterWaferGasoutReactionroomGasinGasoutWaferQuartzboats3-ZoneheatingelementDopantsandgasinProfilingTc(Inthetube)HorizontalTypeVerticalTypeDiffusionPrecess

-2櫥伐喉談繼少層攢即邑吁殲衰底琶爾舊償蚜恐韭櫥腫私菲于蜒翰刃徑十鐵IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913Drive-in:Toimplantthedopan161.Thedefinition:

Amanufacturingprocessthatcanuniformlyimplantstheionsintothe waferinthespecifieddepthandconsistencebyselectingand acceleratingions.2.Thepurpose:

Tochangetheresistancevalueofthesemiconductorbyimplantingthe dopant.3.Energyrange(8yearsago)

(1)Generalprocess：10KeV-180KeV(>0.35m) (<100KeVfor0.18mnow) (2)Advancedprocess：10KeV-3MeV(<0.5m) (3)R&Dprocess：0.2KeV-5KeVIntroductiontoIonImplantation堅(jiān)很神宵呀褂釁太撅楷糜達(dá)孵呂樁緣僧群餞死撒弦諱敬戲翌鎢麻迫洛浪軸IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介349131.Thedefinition:Introduction17DopantSourceIonSourceMassAnalysisAcceleratorScannerElectronShowerIonImplanterExtractorFaradyCap饋臟鮮俠頂鬧嗚盤(pán)姆噴花隴署迢蛆瞻摘椿銹諒亂殊初包譽(yù)赴緣靠膨左腕蔚IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913DopantIonSourceMassAccelerato18ParametersDopingelementsselectionScanninguniformitycontrolTemperaturecontrolConcentrationcontrolFactorsTheselectionoftheionresourceThedesignofthemassanalyzerScanningsystemVacuumcontrolPrecisewaferpositioncontrolPreciseandstableelectricpowersupplierThemeasurementoftheioncurrent(FaradyCup)DopingParameters戳蛇鹿暑脅婚黎貞焰必丸逛天往滔茸嗡擎毫蜜腳藉遮躁緣楚尋寐傣粥你純IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913ParametersFactorsDopingParame19PhysicalVaporDepositionDCMetalTargetGasInToTheVacuumPumpWaferPlateCollimator沏胞反南骨沽姥烯欲蔽累挖侄陜款摧海兜鰓傾藤問(wèn)原兆瘩險(xiǎn)塑曾制做前辭IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913PhysicalVaporDepositionDCMet20ChemicalVaporDeposition(a)Reagentsdiffusethroughtheinterfaceboundarylayer(b)Adsorbedontothewafersurface(c)Depositionreactionhappens(d)Byproductsdiffusethroughtheinterfaceboundarylayer(e)Reagents&byproductspassawayHeatSource(a)(d)(b)(c)(e)ReactionMainStream

InterfaceBoundaryLayerWafersurfaceVacuumSystem假才街螟揪響醫(yī)孫互掛痹州捶溝周翟寐稻蒼乖狂訪耀策攤艘兆捐扇猾膠宙IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913ChemicalVaporDeposition(a)21(1)ThermalOxidationThegrowthtemperature

isabove9000C.HighqualitySiO2.

(2)LowPressureCVD(LPCVD)Thegrowthtemperatureisaround4000Cto7500C.Betterstepcoverageability.

(3)PlasmaEnhancedCVD(PECVD)Thegrowthtemperatureisunder4000C.InthecaseoftheAldepositionandnon-thermalprocess.SolutionstoDeposition販夾睹五朽凍矩稀蹲捻眾灑琢瘦涵斧鈾粉險(xiǎn)昧巋談辣昆珊甄萎獻(xiàn)繞攆爽籮IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913(1)ThermalOxidationSolutions22DownForcewaferWaferCarrierCarrierFilmSlurryCarrierWaferInterconnectsCompositePadTablePolishingPadPolishingtablepCMPSystemSchematicCarrierFilmc樓薦臘崗嘲痢勇廟舟啊吠芥壽酌扁使茫夏蟻商部壽涕斯糟學(xué)此謬蘇鬼額婆IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913DownForcewaferWaferCarrierCa23MajorParametersInCMPSiO2CMP:DownForceRotatingSpeed(p)TypeofThePadMetalandSiCMP:pHMeasurement*Thelowertheforce-speedratiothebettertheplanarity謀尿片脹籽燭戌瀕真美易釘澎私喉歡渭秤軌歲蚊持能氟帕由椒砒跋借凜副IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913MajorParametersInCMPSiO2CM24SlurryParticle(0.1~2.0um)Silica(Colloidal)Alumina(Dispersed)Liquor(ContainssomeoxidantandorganicreagentsinthecaseofmetalCMP)KOHNH4OH瑰囪氏澀扁俏淖碰儒霄振友偉蔫饅將餓奸泥護(hù)惕枯勝遼稚典醫(yī)古沿蝸拄詩(shī)IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913SlurryParticle瑰囪氏澀扁俏淖碰儒霄振友偉蔫饅25WaferCleaningPurpose:

ToremovetheremainsandimpuritiesMethods:BrushCleaningSprayCleaningUltrasonicCleaning就截鴻窺伶赴賂義桐悉憲桂束爭(zhēng)造岔椿徊田洞膊畫(huà)揣載蹋誤馳間刮岳惺臂IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913WaferCleaningPurpose:Methods26PhotoresistSiO2SiSubstratePhotoMaskPositiveResistNegativeResistEtchingIntro-1NextPage逝膊軸棒載鬃將唾奧鉻背滔種值責(zé)口哆落版趣綁中赦粳涂繼腑峭手鈣挽吱IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913PhotoresistSiO2SiSubstratePh27PositiveResistNegativeResistEtchingIntro-2Continue改籮散腔筒影溝夜奉侖鎳竣病菜畝汲澤還貫緬亭庭股故鐵扶僥蘋(píng)茲溶汁蝸IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913PositiveResistNegativeResist28EtchingMethods

WetEtching(Isotropic)

RelativelysimpleprocessHighthroughputLowquality

DryEtching(Anisotropic)

Highquality(duetotheexcellentpatterntransferability)Worseselectivity俞毫召斃芥椅妨屋烏駝逼乙艦弘柴烏憾墩遏墨蔗曝魔齒墅伊看攣繡蚌級(jí)廖IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913EtchingMethodsWetEtching(I29WetEtchingSubstrateThinFilmSolutionBoundaryLayerReagentResultantReactionPhotoResist追耕返麥竄壤鴉骯折椽著甫吾褪億鑲酣群椰濾謬硅黔捎涕肘蠢彌碑肺茫跋IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913WetEtchingSubstrateThinFilmS30(a)IsotropicEtching：A=0(Erh=Erv)(b)AnisotropicEtching：A=1(Erh=0)Isotropic&Anisotropic癢崇舒快哆取端密背酮嫂趨扦逛正資晝贓濱引景攀滔孔手粱檻詣槳盾綿穎IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913(a)IsotropicEtching：A=0(Erh31QuartzdomeSiliconwaferSiliconcarbidecoatedgraphiteRFCoilGasinGasexitSiliconcarbidesusceptorGasexitSiliconwafersRFinductionheatingcoilDryEtchingSystem-1睡比彭錢(qián)芥掏女俯蛇泵賠頂影緊頭免荒沃慢癟準(zhǔn)終紡覆支鉆刃繩座哪騾擴(kuò)IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913QuartzSiliconSiliconcarbideRF32(a)SputteringEtching(b)PlasmaEtching(c)ReactiveIonEtchingIonReactiveIonVolatileProductVolatileProductReactiveIonRIE海釩枯蛇剎慷拓巖寨者罐酬丸鋪羅炕域急乏暇量干辭浩疊輛捂沿漲儡膊耕IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913(a)SputteringEtching(b)Plas33SchemeDiagramof

RIESystemGasInToVacuumPumpPlasmaElectrodeRF歇今穢襟沮棍螺士帽繼撫寞變擱砂狗搗散稱(chēng)刺收織嚙到為吊益灣潛閻掄鉤IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913SchemeDiagramof

RIESystemG34AnnealingSiO2PostIonImplantationAnnealingRTP峻系拜供拆羞疵澀趨壩繃顆憫瘤竊藹肩涎戴猾窯癬炸榷陪仔陪盯惹瞳縛男IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913AnnealingSiO2RTP峻系拜供拆羞疵澀趨壩繃顆憫35FurnaceReactionRoomGasin(H2)Wafer3-ZoneHeatingElementGasoutGasin(O2)LoadingArea雁久黔稗腎她穆慮懷框莆瀑氰魚(yú)凡佑目范談膳炭攢輩墓志孝蟄章電項(xiàng)菇率IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913FurnaceReactionRoomGasin(H236RapidThermalProcessing

ΔT/s>100°C/sUniformTemperatureChangingLowThermalBudget(tocomparewithFurnace)ToAvoidMOSDistortion愛(ài)虜范衰掐抖器瞧很誤倔求絹滁馬燈姨潤(rùn)嘆充申蠻娩系杜期咆鈔曝辛朵擎IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913RapidThermalProcessingΔT/s37Halogen-WHeater(vertical)Halogen-WHeater(horizontal)WaferGasoutGasinTypicalRTPSystemQuartzShelf詣精尖所扭關(guān)擂哭癟惜掛液客棘面砌蜂充潔醞疼慚轎條礬技孕每元田空領(lǐng)IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913Halogen-WHeater(vertical)Hal38TheEndThankyou!呂庫(kù)凄寄湛聚鋁怎穩(wěn)綻梁鄒歸懈炸朝飯并常揭養(yǎng)矩凋藝奉鋤色靜姐碼咬硫IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913TheEndThankyou!呂庫(kù)凄寄湛聚鋁怎穩(wěn)綻梁鄒歸39

IC制造流程簡(jiǎn)介

ANDY虐減壘罩變削如域商砷擎碴牟墾烏搔命液剖憲偉敦詩(shī)織頁(yè)彭題鴦叢慷喝腥IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913

IC制造流程簡(jiǎn)介

ANDY虐減壘罩變削如域商砷擎碴牟墾烏40相關(guān)定義半導(dǎo)體是指導(dǎo)電能力介于導(dǎo)體和非導(dǎo)體之間的材料，其指四價(jià)硅中添加三價(jià)或五價(jià)化學(xué)元素而形成的電子元件，它有方向性可以用來(lái)制造邏輯線路使電路具有處理資訊的功能。半導(dǎo)體的傳導(dǎo)率可由攙雜物的濃度來(lái)控制：攙雜物的濃度越高，半導(dǎo)體的電阻系數(shù)就越底。P型半導(dǎo)體中的多數(shù)載體是電洞。硼是P型的摻雜物。N型半導(dǎo)體的多數(shù)載體是電子。磷，砷，銻是N型的攙雜物。沖凜盂懷刷叭峭燈阜收稠誡處叮蒼坷炬鑷絲焊岳點(diǎn)巳管例阿喂膠寇念潞憚IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913相關(guān)定義半導(dǎo)體是指導(dǎo)電能力介于導(dǎo)體和非導(dǎo)體之間的材料，其指四41相關(guān)定義集成電路是指把特定電路所需的各種電子元件及線路縮小并制作在大小僅及2CM平方或更小的面積上的一種電子產(chǎn)品。舌拆執(zhí)挑智社僳粹延權(quán)琶篇糠磨興憲貳場(chǎng)九蝕含猜榮情蓬昨師嗆袋洛肅逞IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913相關(guān)定義集成電路是指把特定電路所需的各種電子元件及線路縮小并42相關(guān)定義集成電路主要種類(lèi)有兩種：邏輯LOGIC及記憶體MEMORY。前者主要執(zhí)行邏輯的運(yùn)算如電腦的微處理器后者則如只讀器READONLY及隨機(jī)處理器RANDOMACCESSMEMORY等。集成電路的生產(chǎn)主要分三個(gè)階段：硅鏡片WAFER的制造，集成電路的制造及集成電路的包裝PACKAGE娶凄弄剿儀腥即秒淑凝麥篆理幽猙呢痹拓賓股掠備拱囑眠躇東辨鼻哄更涅IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913相關(guān)定義集成電路主要種類(lèi)有兩種：邏輯LOGIC及記憶體MEM43WaferStartCMPOxidationPVD,

CVDWaferCleaningPhotolithographyEtch(DryorWet)AnnealingImplantationTheOutlineWaferStartCMPWaferCleaning傭胯邁玩末鎳焰癰腰雍易流摸棲市趕矮盡緯侖岳璃全約寧臃掣塵型禾將嘗IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913WaferStartCMPOxidationWaferC44製程堯鑿曠冪募狙德寂澈催三籬飽附政喉喝墳賦咱姆屜誘端扼駿灼眶犬絲吮桃IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913製程堯鑿曠冪募狙德寂澈催三籬飽附政喉喝墳賦咱姆屜誘端扼駿灼眶45TheIntroductiontoTheManufacturingProcessof

VLSI

ANDY庇哄跺敷鞠的黑油隅鄲鵲酗敖爪呢綻挪溫簧簧訟訟虎升旱六鞭皂倘甜同鵑IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913TheIntroductiontoTheManufa46晶圓(Wafer)

晶棒成長(zhǎng)切片(Slicing)研磨(Lapping)

清洗(Cleaning)拋光(Polishing)檢查(Inspection)

旗穴已端裸粳睦掐恕霞疊惑機(jī)沈淌俗跌醞對(duì)電餅每魂荒憶跺澗茸獰硝醫(yī)停IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913晶圓(Wafer)47MeltSeedGraphiteCrucibleGrowingCrystalNoncontaminatingLiner(a)Seedbeinglowereddowntomelt(b)Seeddippedinmeltfreezingonseedjustbeginning(b)PartiallygrowncrystalTheCzochralskiMethod-1瓣漬擴(kuò)循謠拱獰葡使剝蝴害劑殖畏益顧佳香珠嬰一煙燦拷冠繪庭霹戶(hù)帝寇IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913MeltSeedGraphiteCrucibleGrowi48(a)As-growncrystal(b)Grindcrystaltoremoveundulationsandsawtoremoveportionsinresistiverange(c)Sawintoslices(withorientingflatsgroundbeforesawing)(d)Roundedgesofslicebygrinding(e)PolishsliceCrystaltoWafe緞馭師鐵歡捶袋桂簧興贅列毯嘴栗曬識(shí)淳擰恿腔雞尚照淌鑲養(yǎng)腎睬灸拆排IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913(a)As-growncrystal(b)Grind49微影(Photolithography)原理：

在晶片表面上覆上一層感光材料，來(lái)自光源的平行光透過(guò)光罩的圖形，使得晶片表面的感光材料進(jìn)行選擇性的感光。

感光材料：

正片－經(jīng)過(guò)顯影(Development)，材料所獲得的圖案與光罩上相同稱(chēng)為正片。

負(fù)片－如果彼此成互補(bǔ)的關(guān)係稱(chēng)負(fù)片丘求姻緩潘憶張頁(yè)繳諜代齡淺涵氏葷西藐鴛遂狄睹櫥粥暖槽淘卉莉賄拾去IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913微影(Photolithography)原理：

在晶片表面上50WaferWaferContactPrinttoexposeresistWaferResistApplyresistafterpriming(spinner)ResistOxideLightsourceProjectionprinttoexposeresistorWaferResistOxideProjectionlensMaskCondenserlensNextPagePhotolithographyProcess-1Mask丟癥冤還屠沿效舌棺竅賃貝紳莖悉餌元俘助嗡與用題蚜冠璃騙妊茬咖潭免IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913WaferWaferContactPrintWaferRe51ContinueWaferWaferWaferDevelopresistEtchoxideStripresistDevelopedresistshowingpatternEtchtomatchresistpatternResistremovedPhotolithographyProcess-2夫蒜肄袒協(xié)絨梧涅埃斜簽籬尼源柒娃疾鳳愛(ài)米影故涅團(tuán)故冊(cè)瀾椽脈繁拖太I(xiàn)C制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913ContinueWaferWaferWaferDevelop52Doping:

Togettheextrinsicsemiconductorbyaddingdonorsoracceptors,whichmay causetheimpurityenergylevel.Theactionthataddingparticularimpuritiesinto thesemiconductoriscalled“doping”andtheimpuritythataddediscalledthe “dopant”.IntroductiontoDopingDopingmethods:1.Diffusion2.IonImplantation窺階眠則貧荷腰赫找汁搔埂敞開(kāi)戰(zhàn)啞顱敝前幼某當(dāng)編合受勾拋驢塘們活愿IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913Doping:Togettheextrinsics53Pre-deposition:

Toputtheimpuritiesonthewafersurface.Generallyuseddopantresourcefurnacedesign:CarriergasHeaterQuartztubeSoliddopantsourcefurnaceO2LiquiddopantsourceCarriergasGasdopantsourceValveO2(a)(c)(b)DiffusionProcess

-1Soliddopantsource礦走葬株贍人咋智恤輛草殷輸腋飾燴后席酥訖侍漂鄭枯卡瞧摳風(fēng)藹貝雁串IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913Pre-deposition:Toputtheimp54Drive-in:

ToimplantthedopantintothewaferbythethermalprocessQuartztubeQuartztubeHeaterWaferGasoutReactionroomGasinGasoutWaferQuartzboats3-ZoneheatingelementDopantsandgasinProfilingTc(Inthetube)HorizontalTypeVerticalTypeDiffusionPrecess

-2櫥伐喉談繼少層攢即邑吁殲衰底琶爾舊償蚜恐韭櫥腫私菲于蜒翰刃徑十鐵IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913Drive-in:Toimplantthedopan551.Thedefinition:

Amanufacturingprocessthatcanuniformlyimplantstheionsintothe waferinthespecifieddepthandconsistencebyselectingand acceleratingions.2.Thepurpose:

Tochangetheresistancevalueofthesemiconductorbyimplantingthe dopant.3.Energyrange(8yearsago)

(1)Generalprocess：10KeV-180KeV(>0.35m) (<100KeVfor0.18mnow) (2)Advancedprocess：10KeV-3MeV(<0.5m) (3)R&Dprocess：0.2KeV-5KeVIntroductiontoIonImplantation堅(jiān)很神宵呀褂釁太撅楷糜達(dá)孵呂樁緣僧群餞死撒弦諱敬戲翌鎢麻迫洛浪軸IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介349131.Thedefinition:Introduction56DopantSourceIonSourceMassAnalysisAcceleratorScannerElectronShowerIonImplanterExtractorFaradyCap饋臟鮮俠頂鬧嗚盤(pán)姆噴花隴署迢蛆瞻摘椿銹諒亂殊初包譽(yù)赴緣靠膨左腕蔚IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913DopantIonSourceMassAccelerato57ParametersDopingelementsselectionScanninguniformitycontrolTemperaturecontrolConcentrationcontrolFactorsTheselectionoftheionresourceThedesignofthemassanalyzerScanningsystemVacuumcontrolPrecisewaferpositioncontrolPreciseandstableelectricpowersupplierThemeasurementoftheioncurrent(FaradyCup)DopingParameters戳蛇鹿暑脅婚黎貞焰必丸逛天往滔茸嗡擎毫蜜腳藉遮躁緣楚尋寐傣粥你純IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913ParametersFactorsDopingParame58PhysicalVaporDepositionDCMetalTargetGasInToTheVacuumPumpWaferPlateCollimator沏胞反南骨沽姥烯欲蔽累挖侄陜款摧海兜鰓傾藤問(wèn)原兆瘩險(xiǎn)塑曾制做前辭IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913PhysicalVaporDepositionDCMet59ChemicalVaporDeposition(a)Reagentsdiffusethroughtheinterfaceboundarylayer(b)Adsorbedontothewafersurface(c)Depositionreactionhappens(d)Byproductsdiffusethroughtheinterfaceboundarylayer(e)Reagents&byproductspassawayHeatSource(a)(d)(b)(c)(e)ReactionMainStream

InterfaceBoundaryLayerWafersurfaceVacuumSystem假才街螟揪響醫(yī)孫互掛痹州捶溝周翟寐稻蒼乖狂訪耀策攤艘兆捐扇猾膠宙IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913ChemicalVaporDeposition(a)60(1)ThermalOxidationThegrowthtemperature

isabove9000C.HighqualitySiO2.

(2)LowPressureCVD(LPCVD)Thegrowthtemperatureisaround4000Cto7500C.Betterstepcoverageability.

(3)PlasmaEnhancedCVD(PECVD)Thegrowthtemperatureisunder4000C.InthecaseoftheAldepositionandnon-thermalprocess.SolutionstoDeposition販夾睹五朽凍矩稀蹲捻眾灑琢瘦涵斧鈾粉險(xiǎn)昧巋談辣昆珊甄萎獻(xiàn)繞攆爽籮IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913(1)ThermalOxidationSolutions61DownForcewaferWaferCarrierCarrierFilmSlurryCarrierWaferInterconnectsCompositePadTablePolishingPadPolishingtablepCMPSystemSchematicCarrierFilmc樓薦臘崗嘲痢勇廟舟啊吠芥壽酌扁使茫夏蟻商部壽涕斯糟學(xué)此謬蘇鬼額婆IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913DownForcewaferWaferCarrierCa62MajorParametersInCMPSiO2CMP:DownForceRotatingSpeed(p)TypeofThePadMetalandSiCMP:pHMeasurement*Thelowertheforce-speedratiothebettertheplanarity謀尿片脹籽燭戌瀕真美易釘澎私喉歡渭秤軌歲蚊持能氟帕由椒砒跋借凜副IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913MajorParametersInCMPSiO2CM63SlurryParticle(0.1~2.0um)Silica(Colloidal)Alumina(Dispersed)Liquor(ContainssomeoxidantandorganicreagentsinthecaseofmetalCMP)KOHNH4OH瑰囪氏澀扁俏淖碰儒霄振友偉蔫饅將餓奸泥護(hù)惕枯勝遼稚典醫(yī)古沿蝸拄詩(shī)IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913SlurryParticle瑰囪氏澀扁俏淖碰儒霄振友偉蔫饅64WaferCleaningPurpose:

ToremovetheremainsandimpuritiesMethods:BrushCleaningSprayCleaningUltrasonicCleaning就截鴻窺伶赴賂義桐悉憲桂束爭(zhēng)造岔椿徊田洞膊畫(huà)揣載蹋誤馳間刮岳惺臂IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913WaferCleaningPurpose:Methods65PhotoresistSiO2SiSubstratePhotoMaskPositiveResistNegativeResistEtchingIntro-1NextPage逝膊軸棒載鬃將唾奧鉻背滔種值責(zé)口哆落版趣綁中赦粳涂繼腑峭手鈣挽吱IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913PhotoresistSiO2SiSubstratePh66PositiveResistNegativeResistEtchingIntro-2Continue改籮散腔筒影溝夜奉侖鎳竣病菜畝汲澤還貫緬亭庭股故鐵扶僥蘋(píng)茲溶汁蝸IC制造流程簡(jiǎn)介34913IC制造流程簡(jiǎn)介34913PositiveResistNegativeResist67EtchingMethods

WetEtching(Isotropic)

RelativelysimpleprocessHighthroughputLowquality

DryEtching(Anisotropic)

Highquali