功率半導(dǎo)體器件物理與工藝研究課件

功率半導(dǎo)體器件、物理與工藝研究/項(xiàng)目負(fù)責(zé)人：張海鵬，

起止年月：1998年01月至今功率半導(dǎo)體器件、物理與工藝研究/1獲得知識(shí)產(chǎn)權(quán)授權(quán)發(fā)明專利授權(quán)實(shí)用新型專利軟件著作權(quán)獲得知識(shí)產(chǎn)權(quán)授權(quán)發(fā)明專利2授權(quán)發(fā)明專利授權(quán)發(fā)明專利3授權(quán)發(fā)明專利授權(quán)發(fā)明專利4授權(quán)發(fā)明專利授權(quán)發(fā)明專利5授權(quán)發(fā)明專利授權(quán)發(fā)明專利6授權(quán)發(fā)明專利授權(quán)發(fā)明專利7授權(quán)發(fā)明專利授權(quán)發(fā)明專利8授權(quán)發(fā)明專利授權(quán)發(fā)明專利9授權(quán)實(shí)用新型專利授權(quán)實(shí)用新型專利10授權(quán)實(shí)用新型專利授權(quán)實(shí)用新型專利11授權(quán)實(shí)用新型專利授權(quán)實(shí)用新型專利12軟件著作權(quán)軟件著作權(quán)13獲獎(jiǎng)獲獎(jiǎng)14SOILDMOS/LIGBT研究

——項(xiàng)目經(jīng)歷國(guó)基重點(diǎn)項(xiàng)目：高溫微電子器件與電路（）國(guó)基面上項(xiàng)目：新結(jié)構(gòu)SOILIGBT器件的基礎(chǔ)研究（）863計(jì)劃：深海磁力儀關(guān)鍵技術(shù)研究863計(jì)劃：深海長(zhǎng)距離大功率能源與圖像信息混合傳輸技術(shù)研究省基面上項(xiàng)目“SOILIGBT減薄漂移區(qū)表面微結(jié)構(gòu)的雙極載流子復(fù)合壽命(y104599)浙江省科技計(jì)劃面上工業(yè)項(xiàng)目：集成抗ESDRFSOILIGBT研制(2009C31004)等等SOILDMOS/LIGBT研究

——項(xiàng)目經(jīng)歷國(guó)基重點(diǎn)項(xiàng)目15主要內(nèi)容DRT-MCTFSOILIGBT器件SOILDMOS/LIGBTwithATGFPTDESDRobustnessofaNovelAnti-ESDTGFPTDSOILDMOS抗ESDSOILIGBT器件的研究UnitedGauss-Pearson-IVDistributionBPLSOILDMOS新結(jié)構(gòu)及其正向阻斷特性BPLSOI材料制備方法初探VGRFSOILIGBT閂鎖效應(yīng)建模與仿真驗(yàn)證

RFSOILDMOS電路建模超高壓FR主要內(nèi)容DRT-MCTFSOILIGBT器件16DRT-MCTFSOILIGBT器件?版圖截面圖?DRT-MCTFSOILIGBT器件?版圖截面圖?17DRT-MCTFSOILIGBT器件截止態(tài)器件內(nèi)靜電壓的高溫特性曲線截止態(tài)泄漏電流高溫特性DRT-MCTFSOILIGBT器件截止態(tài)器件內(nèi)靜電壓的18SOILDMOS/LIGBTwithATGFPTDVerticalgateandfieldplateFieldstopLateralbreakdownMiddlesourceHangzhouDianziUniversity,Email:SOILDMOS/LIGBTwithATGFPTDV19ConventionalSOILDMOS

LateralChannelCurrentflowcrowdVerticalbreakdownShortchannelHangzhouDianziUniversity,Email:ConventionalSOILDMOSLateral20ProcesssimulationwithSilvacoTCADSOIwaferDopingforn-bufferregionFormationoftrenchgateP-Asimplantationintodrainregionp-wellimplantationp+contactimplantationAsimplantationinton+sourceregionmetaldepositionandback-etchingHangzhouDianziUniversity,Email:ProcesssimulationwithSilvac21SOIwaferHangzhouDianziUniversity,Email:SOIwaferHangzhouDianziUnive22Dopingforn-bufferregionSTITEOSspin-coatingEtchingPhosphorusionsimplantationAnnealingHangzhouDianziUniversity,Email:Dopingforn-bufferregionSTIH23FormationoftrenchgateDTIOxidation-etchingGateoxidationPoly-SidepositionCMPOxidedepositionLithographyPionsimplantationHangzhouDianziUniversity,Email:FormationoftrenchgateDTIHan24P-Asimplantationinton+drainregionPimplantationAnnealingAsimplantationAnnealingHangzhouDianziUniversity,Email:P-Asimplantationinton+drai25P-wellimplantationLithographyBimplantationStripphotoresist15keV20keVHangzhouDianziUniversity,Email:P-wellimplantationLithography26p+contactimplantationLithographyBimplantationStripphotoresist1e17,40,RTA5e15,50,——HangzhouDianziUniversity,Email:p+contactimplantationLithogr27Asimplantationinton+sourceregionLithographyAsimplantationStripphotoresist40keV120keVHangzhouDianziUniversity,Email:Asimplantationinton+source28Metaldepositionandback-etchingOxidedepositionLithographyTidepositionAldepositionBack-etchingofAlandTiHangzhouDianziUniversity,Email:Metaldepositionandback-etch29FormerId-VdcurvesFormerstaticresistorcurvesHangzhouDianziUniversity,Email:FormerId-VdcurvesFormerstat30ProcesssimulationwithSilvacoTCAD

forSOILIGBTwithTGFPTDSOIwaferDopingforn-bufferregionFormationoftrenchgateFormationoftrenchdrainwithSTIBimplantationintoanoderegionP-Asimplantationintoshortedanoderegionp-wellimplantationp+contactimplantationAsimplantationinton+sourceregionmetaldepositionandback-etchingHangzhouDianziUniversity,Email:ProcesssimulationwithSilvac31SOIwaferHangzhouDianziUniversity,Email:SOIwaferHangzhouDianziUnive32Dopingforn-bufferregionLithographyPions5e13，160keVStriping&rinsingAnnealingEtchingoxideHangzhouDianziUniversity,Email:Dopingforn-bufferregionLith33LithographyDTI（SSRIE）Striping&rinsingWetOxidationEtchingRinsingFormationoftrenchgateHangzhouDianziUniversity,Email:LithographyFormationoftrench34GatedryoxidationtOX=40nmRedistributionContinued…HangzhouDianziUniversity,Email:GatedryoxidationContinued…Ha35Poly-SidepositionStepbystepetchingCMPContinued…HangzhouDianziUniversity,Email:Poly-SidepositionContinued…Ha36FieldoxidedepositionLithographyPionsimplantation1.0e16,100kStripingphoto-resistAnnealing30min,950℃Continued…HangzhouDianziUniversity,Email:FieldoxidedepositionContinue37BimplantationintoanoderegionLithographyTwiceBionsimplantation1e14/5e16cm-2,30/50keVStripingphoto-resistSTI（SSRIE）HangzhouDianziUniversity,Email:Bimplantationintoanoderegi38P-Asimplantationinton+drainregionlithographyPimplantationAnnealingAsimplantationStripingphoto-resistAnnealingHangzhouDianziUniversity,Email:P-Asimplantationinton+drai39P-wellimplantationLithographyBimplantation1e14cm-230keVStripphoto-resistHangzhouDianziUniversity,Email:P-wellimplantationLithography40p+contactimplantationLithographyBimplantation5e16cm-2,50keVStripphoto-resistRTAHangzhouDianziUniversity,Email:p+contactimplantationLithogr41Asimplantationinton+sourceregionLithographyAsimplantation1e16cm-2120keVStripphotoresistRTA@950℃HangzhouDianziUniversity,Email:Asimplantationinton+source42SOILIGBTwithATGFPTDSOILIGBTwithATGFPTD43TransfercharacteristicTransfercharacteristic44ESDRobustnessofaNovel

Anti-ESDTGFPTDSOILDMOSESDRobustnessofaNovel

Ant45HBMcircuitHBMcircuit46PossitiveESDCharacteristicPossitiveESDCharacteristic472Dtotalcurrentdistributionofanti-ESDTGFPTDSOILDMOSatapositiveESVstimulusat2ns2Dtotalcurrentdistributionofanti-ESDTGFPTDSOILDMOSatapositiveESVstimulusat20ns2Dtotalcurrentdistribution482Dtotalcurrentdistributionofanti-ESDTGFPTDSOILDMOSatapositiveESVstimulusat300ns2Dtotalcurrentdistributionofanti-ESDTGFPTDSOILDMOSatapositiveESVstimulusat0.8s2Dtotalcurrentdistribution492Dtotalcurrentdistributionofanti-ESDTGFPTDSOILDMOSatapositiveESVstimulusat1.0s.2Dtotalcurrentdistribution50NegativeESDCharacteristicNegativeESDCharacteristic512DholeESDcurrentdistributionoftheproposedanti-ESDTGFPTDSOILDMOSattimeof10ns2DelectronESDcurrentdistributionoftheproposedanti-ESDTGFPTDSOILDMOSattimeof10ns2DholeESDcurrentdistributi522DholeESDcurrentdistributionoftheproposedanti-ESDTGFPTDSOILDMOSattimeof500ns2DholeESDcurrentdistributionoftheproposedanti-ESDTGFPTDSOILDMOSattimeof500ns2DholeESDcurrentdistributi532DtotalESDcurrentdistributionoftheproposed

anti-ESDTGFPTDSOILDMOSattimeof1.0us2DtotalESDcurrentdistribut54抗ESDSOILIGBT器件的研究抗ESDSOILIGBT器件的研究55伏安特性伏安特性56擊穿特性擊穿特性57閂鎖特性斷態(tài) 通態(tài)閂鎖特性斷態(tài) 通態(tài)58改進(jìn)結(jié)構(gòu)之一改進(jìn)結(jié)構(gòu)之一59工藝設(shè)計(jì)、虛擬制造與器件仿真工藝仿真工具工藝流程設(shè)計(jì)及仿真仿真結(jié)果分析工藝設(shè)計(jì)、虛擬制造與器件仿真工藝仿真工具60工藝流程設(shè)計(jì)及仿真頂層硅膜BOX硅襯底SOI材料結(jié)構(gòu)初始化膜厚1.4m濃度埋氧層1.25m工藝流程設(shè)計(jì)及仿真頂層硅膜BOX硅襯底SOI材料結(jié)構(gòu)初始化61STI形成硅島(a)氧化、氮化、旋涂光刻膠(b)曝光、RIE刻蝕(c)去除光刻膠，熱氧化(d)HDPCVD二氧化硅(e)CMP900℃，10nmLPCVD,80nm1100℃10nmSTI形成硅島(a)氧化、氮化、旋涂光刻膠(b)曝光62緩沖區(qū)初始摻雜

緩沖區(qū)濃度分布涂膠1.5m、光刻注磷:劑量能量120keV去膠、去氮化層、去表面氧化層退火：1100℃

氮?dú)鈿夥?/p>

40min緩沖區(qū)初始摻雜緩沖區(qū)濃度分布涂膠1.5m、光刻63P-well摻雜涂膠、光刻注硼：劑量能量120keV去膠退火：1000℃25minP-Well摻雜分布P-well摻雜涂膠、光刻P-Well摻雜分布64P+陽(yáng)極區(qū)和P-Well歐姆接觸區(qū)摻雜

涂膠、光刻注硼：劑量能量40keV去膠RTAP+陽(yáng)極區(qū)和P-Well歐姆接觸區(qū)摻雜分布P+陽(yáng)極區(qū)和P-Well歐姆接觸區(qū)摻雜涂膠、光刻P+陽(yáng)極65場(chǎng)氧形成去氧化層淀積氧化層涂膠光刻刻蝕裸漏氧化層去膠

場(chǎng)氧形成場(chǎng)氧形成去氧化層場(chǎng)氧形成66柵氧的形成與閾值電壓調(diào)整注入1000℃干氧氧化載3%HCl，40nm注硼：劑量能量20keV

斜角7o

柵氧的形成與閾值電壓調(diào)整注入柵氧的形成與閾值電壓調(diào)整注入1000℃干氧氧化柵氧的形67多晶硅淀積LPCVD0.2m涂膠光刻刻蝕氧化層

多晶硅淀積多晶硅淀積LPCVD多晶硅淀積68N+陰極區(qū)和多晶硅摻雜涂膠光刻注砷：劑量能量50keVRTAN+陰極區(qū)和多晶硅摻雜N+陰極區(qū)和多晶硅摻雜涂膠N+陰極區(qū)和多晶硅摻雜69形成接觸孔涂膠光刻刻蝕多晶硅去膠淀積氧化硅涂膠光刻刻蝕氧化硅去膠

形成接觸孔形成接觸孔涂膠形成接觸孔70金屬淀積與反刻淀積鈦，50nm鈦硅化：600℃，1min腐蝕鈦淀積鋁，500nm涂膠光刻刻蝕鋁

金屬淀積與反刻金屬淀積與反刻淀積鈦，50nm金屬淀積與反刻71仿真結(jié)果分析圖53器件表面橫向凈摻雜濃度分布

橫坐標(biāo)為1.8m處的縱向摻雜分布電學(xué)參數(shù)目標(biāo)值仿真值閾值電壓1.0～2.0V1.5V擊穿電壓≥100V122.4V通態(tài)電流密度≥90A/cm26200A/cm2抗ESD鉗位電壓10～20V11.05V通態(tài)壓降≤5V2V通態(tài)閂鎖電壓(柵壓3.0V)≥20V57V表3SOILIGBT電學(xué)參數(shù)仿真結(jié)果仿真結(jié)果分析圖53器件表面橫向凈摻雜濃度分布橫坐標(biāo)為72集成抗ESDSOILIGBT版圖設(shè)計(jì)方法

器件單元版圖設(shè)計(jì)布局布線版圖優(yōu)化版圖后仿真集成抗ESDSOILIGBT版圖設(shè)計(jì)方法器件單元版圖設(shè)73器件單元版圖設(shè)計(jì)0.5mBCD工藝版圖設(shè)計(jì)規(guī)則版圖層次定義版圖設(shè)計(jì)方法設(shè)定版圖設(shè)計(jì)環(huán)境參照預(yù)仿真的器件結(jié)構(gòu)，遵循上述版圖設(shè)計(jì)規(guī)則，依次設(shè)計(jì)不同層次和區(qū)域的版圖ekjSOILIGBT器件單元版圖總圖器件單元版圖設(shè)計(jì)0.5mBCD工藝版圖設(shè)計(jì)規(guī)則ekjS74布局布線

管芯整體布局布線圖器件單元的個(gè)數(shù)為1221個(gè)通態(tài)電流可達(dá)2.56A改進(jìn)后1188個(gè)2.5A個(gè)

布局布線管芯整體布局布線圖器件單元的個(gè)數(shù)為1221個(gè)個(gè)75版圖優(yōu)化SOILIGBT器件單元梯形版圖

梯形器件單元版圖的整體布局版圖優(yōu)化SOILIGBT器件單元梯形版圖梯形器件單76版圖后仿真

前仿真與后仿真輸出特性對(duì)比閂鎖曲線對(duì)比圖

關(guān)斷特性對(duì)比版圖后仿真前仿真與后仿真輸出特性對(duì)比閂鎖曲線對(duì)比圖77UnitedGauss-Pearson-IVDistributionUnitedGauss-Pearson-IVDistri78功率半導(dǎo)體器件物理與工藝研究課件79UnitedGauss-Pearson-IVDistributionModelUnitedGauss-Pearson-IVDistri80UnitedGauss-Pearson-IVDistributionUnitedGauss-Pearson-IVDistri81

RelatedparametersRelatedparameters82功率半導(dǎo)體器件物理與工藝研究課件83BPLSOILDMOSBPLSOILDMOS84BPLSOILDMOS新結(jié)構(gòu)及其正向阻斷特性圖62BPLSOILDMOS器件截面結(jié)構(gòu)思想圖63工藝仿真BPLSOILDMOS器件截面結(jié)構(gòu)圖64工藝仿真常規(guī)SOILDMOS器件截面結(jié)構(gòu)圖65正向阻斷特性曲線仿真結(jié)果BPLSOILDMOS新結(jié)構(gòu)及其正向阻斷特性圖62BP85常規(guī)SOILDMOS器件擊穿態(tài)二維電場(chǎng)分布BPLSOILDMOS器件擊穿態(tài)二維電場(chǎng)分布高壓版本常規(guī)SOILDMOS器件擊穿態(tài)二維電場(chǎng)分布BPLSO86一種新型低通態(tài)電阻的雙槽柵SOILDMOS

一種新型低通態(tài)電阻的雙槽柵SOILDMOS87電場(chǎng)分布橫向縱向溫度場(chǎng)分布漏極電流與熱特性比較電場(chǎng)分布橫向縱向溫度場(chǎng)分布漏極電流與熱特性比較88

BPLSOILIGBT新結(jié)構(gòu)及其正向阻斷特性

擊穿狀態(tài)二維電場(chǎng)分布與擊穿電流矢量分布擊穿特性TCAD仿真結(jié)果器件截面結(jié)構(gòu)TCAD工藝仿真結(jié)果集成抗ESDBPLSOILIGBT器件思想BPLSOILIGBT新結(jié)構(gòu)及其正向阻斷特性擊穿狀態(tài)89BPLSOI材料制備方法初探對(duì)于SOI橫向高壓功率器件，為了提高器件的耐壓水平和浪涌能力，通常需要形成具有階梯型或緩變形逆向雜質(zhì)濃度分布的隱埋p型層(BPL)。利用硼的固溶度較大，鋁的擴(kuò)散系數(shù)較大，鎵擴(kuò)散系數(shù)和固溶度居中的特點(diǎn)，可在硅的表面形成高濃度的硼摻雜區(qū)，體內(nèi)形成鎵鋁雜質(zhì)的相對(duì)平滑的緩變雜質(zhì)濃度分布區(qū)，最終形成緩變型的濃度分布。這種雜質(zhì)濃度分布結(jié)構(gòu)可以用硼鎵鋁在硅晶圓中長(zhǎng)時(shí)間的高溫?cái)U(kuò)散來(lái)完成。然后去除熱擴(kuò)散摻雜過(guò)程中形成的硅晶圓表面氧化層，接著將其(稱為A片)與另一片未經(jīng)P型摻雜的初始硅晶圓(稱為B片)進(jìn)行高溫?zé)嵫趸?，在硅晶圓正表面制備一薄層高質(zhì)量的熱氧化層。之后，將A片翻轉(zhuǎn)過(guò)來(lái)與B片基底鍵合，最后經(jīng)過(guò)磨片與拋光制作成所需要的BPLSOI晶圓。BPLSOI材料制備方法初探對(duì)于SOI橫向高壓功率器件，90研究了硼鎵鋁在高溫長(zhǎng)時(shí)間擴(kuò)散下的雜質(zhì)濃度分布規(guī)律，建立了濃度分布模型：1100℃硼鋁鎵高溫?cái)U(kuò)散的雜質(zhì)濃度分布總圖研究了硼鎵鋁在高溫長(zhǎng)時(shí)間擴(kuò)散下的雜質(zhì)濃度分布規(guī)律，建立了濃度91VGRFSOILIGBT閂鎖效應(yīng)建模與仿真驗(yàn)證

VGRFSOILIGBT器件結(jié)構(gòu)的TCAD工藝仿真結(jié)果式(8.7)-(8.13)為所建立的閂鎖電流模型VGRFSOILIGBT閂鎖效應(yīng)建模與仿真驗(yàn)證VG92(a)完整伏安特性曲線(b)snap-back局部放大零柵源電壓下VGSOILIGBT伏安特性的TCAD仿真結(jié)果(a)完整伏安特性曲線93近臨界閂鎖態(tài)閂鎖電流密度二維分布近臨界閂鎖態(tài)被觸發(fā)導(dǎo)通

近臨界閂鎖態(tài)閂鎖電流密度二維分布94TheproposedBPLSOILIGBTBuriedPLayerForwardblockcharacteristicsimprovedAnti-ESDdesignAlleviatetheeffectofself-heatingTheproposedBPLSOILIGBTBuri95BPLSOILIGBTBPLSOILIGBT962DdistributionofimpactionizationrateinforwardbreakdownstateEllipseregionImpactionizationcenter2Ddistributionofimpactioni972DdistributionsofelectricfieldandbreakdowncurrentinforwardbreakdownstateEllipseregionelectricpeakpositionTheyellowellipseregionthecriticalbreakdownelectricfieldisthelowest2Ddistributionsofelectricf982Dpotentialdistribution

inforwardbreakdownstate2Dpotentialdistributioninf99Lateralpotentialdistribution

atdifferentverticalposition

inforwardbreakdownstateVerticalpotentialdistribution

atdifferentlateralposition

inforwardbreakdownstateLateralpotentialdistribution100ThermalSimulationResultsInfluenceofSithicknessonthermalresistanceThermalSimulationResultsInfl101InfluenceofBOXthickness

onthermalresistanceInfluenceofBOXthicknesson102RFSOILDMOS電路建模SOILDMOS基于物理的分支緊湊電路模型RFSOILDMOS電路建模SOILDMOS基于物理103SOILDMOS甲乙類功放電路設(shè)計(jì)SOILDMOS甲乙類功放電路設(shè)計(jì)104功率半導(dǎo)體器件物理與工藝研究課件105超高壓FR超高壓FR106W1W2S1S2Vr101096101132510613851111450極大116139512113201011111420106111136015109610613801111450極大1161400121132020109610613801111455極大1161410121134020159610613801111455極大11614121211350W1W2S1S2Vr10109610113251061385107擊穿電壓擊穿電壓108通態(tài)特性通態(tài)特性109關(guān)斷特性關(guān)斷特性110謝謝！謝謝！111功率半導(dǎo)體器件、物理與工藝研究/項(xiàng)目負(fù)責(zé)人：張海鵬，

起止年月：1998年01月至今功率半導(dǎo)體器件、物理與工藝研究/112獲得知識(shí)產(chǎn)權(quán)授權(quán)發(fā)明專利授權(quán)實(shí)用新型專利軟件著作權(quán)獲得知識(shí)產(chǎn)權(quán)授權(quán)發(fā)明專利113授權(quán)發(fā)明專利授權(quán)發(fā)明專利114授權(quán)發(fā)明專利授權(quán)發(fā)明專利115授權(quán)發(fā)明專利授權(quán)發(fā)明專利116授權(quán)發(fā)明專利授權(quán)發(fā)明專利117授權(quán)發(fā)明專利授權(quán)發(fā)明專利118授權(quán)發(fā)明專利授權(quán)發(fā)明專利119授權(quán)發(fā)明專利授權(quán)發(fā)明專利120授權(quán)實(shí)用新型專利授權(quán)實(shí)用新型專利121授權(quán)實(shí)用新型專利授權(quán)實(shí)用新型專利122授權(quán)實(shí)用新型專利授權(quán)實(shí)用新型專利123軟件著作權(quán)軟件著作權(quán)124獲獎(jiǎng)獲獎(jiǎng)125SOILDMOS/LIGBT研究

——項(xiàng)目經(jīng)歷國(guó)基重點(diǎn)項(xiàng)目：高溫微電子器件與電路（）國(guó)基面上項(xiàng)目：新結(jié)構(gòu)SOILIGBT器件的基礎(chǔ)研究（）863計(jì)劃：深海磁力儀關(guān)鍵技術(shù)研究863計(jì)劃：深海長(zhǎng)距離大功率能源與圖像信息混合傳輸技術(shù)研究省基面上項(xiàng)目“SOILIGBT減薄漂移區(qū)表面微結(jié)構(gòu)的雙極載流子復(fù)合壽命(y104599)浙江省科技計(jì)劃面上工業(yè)項(xiàng)目：集成抗ESDRFSOILIGBT研制(2009C31004)等等SOILDMOS/LIGBT研究

——項(xiàng)目經(jīng)歷國(guó)基重點(diǎn)項(xiàng)目126主要內(nèi)容DRT-MCTFSOILIGBT器件SOILDMOS/LIGBTwithATGFPTDESDRobustnessofaNovelAnti-ESDTGFPTDSOILDMOS抗ESDSOILIGBT器件的研究UnitedGauss-Pearson-IVDistributionBPLSOILDMOS新結(jié)構(gòu)及其正向阻斷特性BPLSOI材料制備方法初探VGRFSOILIGBT閂鎖效應(yīng)建模與仿真驗(yàn)證

RFSOILDMOS電路建模超高壓FR主要內(nèi)容DRT-MCTFSOILIGBT器件127DRT-MCTFSOILIGBT器件?版圖截面圖?DRT-MCTFSOILIGBT器件?版圖截面圖?128DRT-MCTFSOILIGBT器件截止態(tài)器件內(nèi)靜電壓的高溫特性曲線截止態(tài)泄漏電流高溫特性DRT-MCTFSOILIGBT器件截止態(tài)器件內(nèi)靜電壓的129SOILDMOS/LIGBTwithATGFPTDVerticalgateandfieldplateFieldstopLateralbreakdownMiddlesourceHangzhouDianziUniversity,Email:SOILDMOS/LIGBTwithATGFPTDV130ConventionalSOILDMOS

LateralChannelCurrentflowcrowdVerticalbreakdownShortchannelHangzhouDianziUniversity,Email:ConventionalSOILDMOSLateral131ProcesssimulationwithSilvacoTCADSOIwaferDopingforn-bufferregionFormationoftrenchgateP-Asimplantationintodrainregionp-wellimplantationp+contactimplantationAsimplantationinton+sourceregionmetaldepositionandback-etchingHangzhouDianziUniversity,Email:ProcesssimulationwithSilvac132SOIwaferHangzhouDianziUniversity,Email:SOIwaferHangzhouDianziUnive133Dopingforn-bufferregionSTITEOSspin-coatingEtchingPhosphorusionsimplantationAnnealingHangzhouDianziUniversity,Email:Dopingforn-bufferregionSTIH134FormationoftrenchgateDTIOxidation-etchingGateoxidationPoly-SidepositionCMPOxidedepositionLithographyPionsimplantationHangzhouDianziUniversity,Email:FormationoftrenchgateDTIHan135P-Asimplantationinton+drainregionPimplantationAnnealingAsimplantationAnnealingHangzhouDianziUniversity,Email:P-Asimplantationinton+drai136P-wellimplantationLithographyBimplantationStripphotoresist15keV20keVHangzhouDianziUniversity,Email:P-wellimplantationLithography137p+contactimplantationLithographyBimplantationStripphotoresist1e17,40,RTA5e15,50,——HangzhouDianziUniversity,Email:p+contactimplantationLithogr138Asimplantationinton+sourceregionLithographyAsimplantationStripphotoresist40keV120keVHangzhouDianziUniversity,Email:Asimplantationinton+source139Metaldepositionandback-etchingOxidedepositionLithographyTidepositionAldepositionBack-etchingofAlandTiHangzhouDianziUniversity,Email:Metaldepositionandback-etch140FormerId-VdcurvesFormerstaticresistorcurvesHangzhouDianziUniversity,Email:FormerId-VdcurvesFormerstat141ProcesssimulationwithSilvacoTCAD

forSOILIGBTwithTGFPTDSOIwaferDopingforn-bufferregionFormationoftrenchgateFormationoftrenchdrainwithSTIBimplantationintoanoderegionP-Asimplantationintoshortedanoderegionp-wellimplantationp+contactimplantationAsimplantationinton+sourceregionmetaldepositionandback-etchingHangzhouDianziUniversity,Email:ProcesssimulationwithSilvac142SOIwaferHangzhouDianziUniversity,Email:SOIwaferHangzhouDianziUnive143Dopingforn-bufferregionLithographyPions5e13，160keVStriping&rinsingAnnealingEtchingoxideHangzhouDianziUniversity,Email:Dopingforn-bufferregionLith144LithographyDTI（SSRIE）Striping&rinsingWetOxidationEtchingRinsingFormationoftrenchgateHangzhouDianziUniversity,Email:LithographyFormationoftrench145GatedryoxidationtOX=40nmRedistributionContinued…HangzhouDianziUniversity,Email:GatedryoxidationContinued…Ha146Poly-SidepositionStepbystepetchingCMPContinued…HangzhouDianziUniversity,Email:Poly-SidepositionContinued…Ha147FieldoxidedepositionLithographyPionsimplantation1.0e16,100kStripingphoto-resistAnnealing30min,950℃Continued…HangzhouDianziUniversity,Email:FieldoxidedepositionContinue148BimplantationintoanoderegionLithographyTwiceBionsimplantation1e14/5e16cm-2,30/50keVStripingphoto-resistSTI（SSRIE）HangzhouDianziUniversity,Email:Bimplantationintoanoderegi149P-Asimplantationinton+drainregionlithographyPimplantationAnnealingAsimplantationStripingphoto-resistAnnealingHangzhouDianziUniversity,Email:P-Asimplantationinton+drai150P-wellimplantationLithographyBimplantation1e14cm-230keVStripphoto-resistHangzhouDianziUniversity,Email:P-wellimplantationLithography151p+contactimplantationLithographyBimplantation5e16cm-2,50keVStripphoto-resistRTAHangzhouDianziUniversity,Email:p+contactimplantationLithogr152Asimplantationinton+sourceregionLithographyAsimplantation1e16cm-2120keVStripphotoresistRTA@950℃HangzhouDianziUniversity,Email:Asimplantationinton+source153SOILIGBTwithATGFPTDSOILIGBTwithATGFPTD154TransfercharacteristicTransfercharacteristic155ESDRobustnessofaNovel

Anti-ESDTGFPTDSOILDMOSESDRobustnessofaNovel

Ant156HBMcircuitHBMcircuit157PossitiveESDCharacteristicPossitiveESDCharacteristic1582Dtotalcurrentdistributionofanti-ESDTGFPTDSOILDMOSatapositiveESVstimulusat2ns2Dtotalcurrentdistributionofanti-ESDTGFPTDSOILDMOSatapositiveESVstimulusat20ns2Dtotalcurrentdistribution1592Dtotalcurrentdistributionofanti-ESDTGFPTDSOILDMOSatapositiveESVstimulusat300ns2Dtotalcurrentdistributionofanti-ESDTGFPTDSOILDMOSatapositiveESVstimulusat0.8s2Dtotalcurrentdistribution1602Dtotalcurrentdistributionofanti-ESDTGFPTDSOILDMOSatapositiveESVstimulusat1.0s.2Dtotalcurrentdistribution161NegativeESDCharacteristicNegativeESDCharacteristic1622DholeESDcurrentdistributionoftheproposedanti-ESDTGFPTDSOILDMOSattimeof10ns2DelectronESDcurrentdistributionoftheproposedanti-ESDTGFPTDSOILDMOSattimeof10ns2DholeESDcurrentdistributi1632DholeESDcurrentdistributionoftheproposedanti-ESDTGFPTDSOILDMOSattimeof500ns2DholeESDcurrentdistributionoftheproposedanti-ESDTGFPTDSOILDMOSattimeof500ns2DholeESDcurrentdistributi1642DtotalESDcurrentdistributionoftheproposed

anti-ESDTGFPTDSOILDMOSattimeof1.0us2DtotalESDcurrentdistribut165抗ESDSOILIGBT器件的研究抗ESDSOILIGBT器件的研究166伏安特性伏安特性167擊穿特性擊穿特性168閂鎖特性斷態(tài) 通態(tài)閂鎖特性斷態(tài) 通態(tài)169改進(jìn)結(jié)構(gòu)之一改進(jìn)結(jié)構(gòu)之一170工藝設(shè)計(jì)、虛擬制造與器件仿真工藝仿真工具工藝流程設(shè)計(jì)及仿真仿真結(jié)果分析工藝設(shè)計(jì)、虛擬制造與器件仿真工藝仿真工具171工藝流程設(shè)計(jì)及仿真頂層硅膜BOX硅襯底SOI材料結(jié)構(gòu)初始化膜厚1.4m濃度埋氧層1.25m工藝流程設(shè)計(jì)及仿真頂層硅膜BOX硅襯底SOI材料結(jié)構(gòu)初始化172STI形成硅島(a)氧化、氮化、旋涂光刻膠(b)曝光、RIE刻蝕(c)去除光刻膠，熱氧化(d)HDPCVD二氧化硅(e)CMP900℃，10nmLPCVD,80nm1100℃10nmSTI形成硅島(a)氧化、氮化、旋涂光刻膠(b)曝光173緩沖區(qū)初始摻雜

緩沖區(qū)濃度分布涂膠1.5m、光刻注磷:劑量能量120keV去膠、去氮化層、去表面氧化層退火：1100℃

氮?dú)鈿夥?/p>

40min緩沖區(qū)初始摻雜緩沖區(qū)濃度分布涂膠1.5m、光刻174P-well摻雜涂膠、光刻注硼：劑量能量120keV去膠退火：1000℃25minP-Well摻雜分布P-well摻雜涂膠、光刻P-Well摻雜分布175P+陽(yáng)極區(qū)和P-Well歐姆接觸區(qū)摻雜

涂膠、光刻注硼：劑量能量40keV去膠RTAP+陽(yáng)極區(qū)和P-Well歐姆接觸區(qū)摻雜分布P+陽(yáng)極區(qū)和P-Well歐姆接觸區(qū)摻雜涂膠、光刻P+陽(yáng)極176場(chǎng)氧形成去氧化層淀積氧化層涂膠光刻刻蝕裸漏氧化層去膠

場(chǎng)氧形成場(chǎng)氧形成去氧化層場(chǎng)氧形成177柵氧的形成與閾值電壓調(diào)整注入1000℃干氧氧化載3%HCl，40nm注硼：劑量能量20keV

斜角7o

柵氧的形成與閾值電壓調(diào)整注入柵氧的形成與閾值電壓調(diào)整注入1000℃干氧氧化柵氧的形178多晶硅淀積LPCVD0.2m涂膠光刻刻蝕氧化層

多晶硅淀積多晶硅淀積LPCVD多晶硅淀積179N+陰極區(qū)和多晶硅摻雜涂膠光刻注砷：劑量能量50keVRTAN+陰極區(qū)和多晶硅摻雜N+陰極區(qū)和多晶硅摻雜涂膠N+陰極區(qū)和多晶硅摻雜180形成接觸孔涂膠光刻刻蝕多晶硅去膠淀積氧化硅涂膠光刻刻蝕氧化硅去膠

形成接觸孔形成接觸孔涂膠形成接觸孔181金屬淀積與反刻淀積鈦，50nm鈦硅化：600℃，1min腐蝕鈦淀積鋁，500nm涂膠光刻刻蝕鋁

金屬淀積與反刻金屬淀積與反刻淀積鈦，50nm金屬淀積與反刻182仿真結(jié)果分析圖53器件表面橫向凈摻雜濃度分布

橫坐標(biāo)為1.8m處的縱向摻雜分布電學(xué)參數(shù)目標(biāo)值仿真值閾值電壓1.0～2.0V1.5V擊穿電壓≥100V122.4V通態(tài)電流密度≥90A/cm26200A/cm2抗ESD鉗位電壓10～20V11.05V通態(tài)壓降≤5V2V通態(tài)閂鎖電壓(柵壓3.0V)≥20V57V表3SOILIGBT電學(xué)參數(shù)仿真結(jié)果仿真結(jié)果分析圖53器件表面橫向凈摻雜濃度分布橫坐標(biāo)為183集成抗ESDSOILIGBT版圖設(shè)計(jì)方法

器件單元版圖設(shè)計(jì)布局布線版圖優(yōu)化版圖后仿真集成抗ESDSOILIGBT版圖設(shè)計(jì)方法器件單元版圖設(shè)184器件單元版圖設(shè)計(jì)0.5mBCD工藝版圖設(shè)計(jì)規(guī)則版圖層次定義版圖設(shè)計(jì)方法設(shè)定版圖設(shè)計(jì)環(huán)境參照預(yù)仿真的器件結(jié)構(gòu)，遵循上述版圖設(shè)計(jì)規(guī)則，依次設(shè)計(jì)不同層次和區(qū)域的版圖ekjSOILIGBT器件單元版圖總圖器件單元版圖設(shè)計(jì)0.5mBCD工藝版圖設(shè)計(jì)規(guī)則ekjS185布局布線

管芯整體布局布線圖器件單元的個(gè)數(shù)為1221個(gè)通態(tài)電流可達(dá)2.56A改進(jìn)后1188個(gè)2.5A個(gè)

布局布線管芯整體布局布線圖器件單元的個(gè)數(shù)為1221個(gè)個(gè)186版圖優(yōu)化SOILIGBT器件單元梯形版圖

梯形器件單元版圖的整體布局版圖優(yōu)化SOILIGBT器件單元梯形版圖梯形器件單187版圖后仿真

前仿真與后仿真輸出特性對(duì)比閂鎖曲線對(duì)比圖

關(guān)斷特性對(duì)比版圖后仿真前仿真與后仿真輸出特性對(duì)比閂鎖曲線對(duì)比圖188UnitedGauss-Pearson-IVDistributionUnitedGauss-Pearson-IVDistri189功率半導(dǎo)體器件物理與工藝研究課件190UnitedGauss-Pearson-IVDistributionModelUnitedGauss-Pearson-IVDistri191UnitedGauss-Pearson-IVDistributionUnitedGauss-Pearson-IVDistri192

RelatedparametersRelatedparameters193功率半導(dǎo)體器件物理與工藝研究課件194BPLSOILDMOSBPLSOILDMOS195BPLSOILDMOS新結(jié)構(gòu)及其正向阻斷特性圖62BPLSOILDMOS器件截面結(jié)構(gòu)思想圖63工藝仿真BPLSOILDMOS器件截面結(jié)構(gòu)圖64工藝仿真常規(guī)SOILDMOS器件截面結(jié)構(gòu)圖65正向阻斷特性曲線仿真結(jié)果BPLSOILDMOS新結(jié)構(gòu)及其正向阻斷特性圖62BP196常規(guī)SOILDMOS器件擊穿態(tài)二維電場(chǎng)分布BPLSOILDMOS器件擊穿態(tài)二維電場(chǎng)分布高壓版本常規(guī)SOILDMOS器件擊穿態(tài)二維電場(chǎng)分布BPLSO197一種新型低通態(tài)電阻的雙槽柵SOILDMOS

一種新型低通態(tài)電阻的雙槽柵SOILDMOS198電場(chǎng)分布橫向縱向溫度場(chǎng)分布漏極電流與熱特性比較電場(chǎng)分布橫向縱向溫度場(chǎng)分布漏極電流與熱特性比較199

BPLSOILIGBT新結(jié)構(gòu)及其正向阻斷特性

擊穿狀態(tài)二維電場(chǎng)分布與擊穿電流矢量分布擊穿特性TCAD仿真結(jié)果器件截面結(jié)構(gòu)TCAD工藝仿真結(jié)果集成抗ESDBPLSOILIGBT器件思想BPLSOILIGBT新結(jié)構(gòu)及其正向阻斷特性