集成電路integritycircuit學習以及常用封裝介紹

集成電路INTEGRITY

CIRCUIT學習以及常用封閉介紹集成電路integritycircuit以及常用封閉介紹

ESD等級分類:

等級ESD敏感度(電壓)範圍典型設備00~100VEPROM,CMOS,MOSFET,GAAS,FET,SAM1100~1000VSCR,JFET,薄膜電阻,二極管21000~4000VProtectedMOS,SCHOTTKY,TTL,OP-AMPandLSI34000~1500V大多其它半導體一個問題

CMOS為何比TTL電路對靜電敏感?WHATISIC?1.從PN結說起2.晶體管3.場效應管4.兩種電路二極管

P-N結及其電流電壓特性晶體二極管為一個由p型半導體和n型半導體形成的p-n結，在其界面處兩側形成空間電荷層，并建有自建電場。當不存在外加電壓時，由于p-n結兩邊載流子濃度差引起的擴散電流和自建電場引起的漂移電流相等而處于電平衡狀態(tài)。當外界有正向電壓偏置時，外界電場和自建電場的互相抑消作用使載流子的擴散電流增加引起了正向電流：。當外界有反向電壓偏置時，外界電場和自建電場進一步加強，形成在一定反向電壓范圍內(nèi)與反向偏置電壓值無關的反向飽和電流I0。當外加的反向電壓高到一定程度時，p-n結空間電荷層中的電場強度達到臨界值產(chǎn)生載流子的倍增過程，產(chǎn)生大量電子空穴對，產(chǎn)生了數(shù)值很大的反向擊穿電流，稱為二極管的擊穿現(xiàn)象。

半導體技術發(fā)展史

年，法拉第發(fā)現(xiàn)硫化銀（AgS）電阻率的負溫度系數(shù)，是目前所知對物質半導體特性的最早發(fā)現(xiàn)。年，硒（Se）整流器出現(xiàn)。年，貝爾實驗室的肖克萊（W.Shockley）、布拉頓（W.H.Brattain）和巴?。↗.Bardeen）發(fā)明晶體管并于1956年獲諾貝爾物理學獎。年，江琪（L.Esaki<）發(fā)明了隧道二極管。年，諾依斯（R.Noyce）研制成功了世界上第一塊集成電路。半導體技術發(fā)展史

年，約瑟夫遜（B.D.Josephson）提出了超導隧道結。年，采用2um工藝，集成元件數(shù)達10萬個的64KDRAM研制成功。年，16MDRAM研制成功。年，64MDRAM研制成功。年，1GDRAM研制成功。??????PIIII

中國芯三極管

三極管相當于兩個背靠背的二極管PN結。正向偏置的EB結有空穴從發(fā)射極注入基區(qū)，其中大部分空穴能夠到達集電結的邊界，并在反向偏置的CB結勢壘電場的作用下到達集電區(qū)，形成集電極電流IC。在共發(fā)射極晶體管電路中,發(fā)射結在基極電路中正向偏置,其電壓降很小。絕大部分的集電極和發(fā)射極之間的外加偏壓都加在反向偏置的集電結上。由于VBE

很小，所以基極電流約為IB=5V/50kΩ=0.1mA。如果晶體管的共發(fā)射極電流放大系數(shù)β=IC/IB=100,集電極電流IC=β*IB=10mA。在500Ω的集電極負載電阻上有電壓降VRC=10mA*500Ω=5V，而晶體管集電極和發(fā)射極之間的壓降為VCE=5V，如果在基極偏置電路中疊加一個交變的小電流ib，在集電極電路中將出現(xiàn)一個相應的交變電流ic，有ic/ib=β，實現(xiàn)了雙極晶體管的電流放大作用。

場效應管金屬氧化物半導體場效應三極管的基本工作原理是靠半導體表面的電場效應，在半導體中感生出導電溝道來進行工作的。當柵G電壓VG

增大時，p型半導體表面的多數(shù)載流子棗空穴逐漸減少、耗盡，而電子逐漸積累到反型。當表面達到反型時，電子積累層將在n+源區(qū)S和n+漏區(qū)D之間形成導電溝道。當VDS≠0時，源漏電極之間有較大的電流IDS

流過。使半導體表面達到強反型時所需加的柵源電壓稱為閾值電壓VT。當VGS>VT

并取不同數(shù)值時，反型層的導電能力將改變，在相同的VDS

下也將產(chǎn)生不同的IDS,實現(xiàn)柵源電壓VGS

對源漏電流IDS

的控制。模擬電路數(shù)字電路放大電路直流單級變壓器耦合阻容耦合直接耦合差動放大交流多級交流單級直流多級集成運放門分立門集成門TTL門電路MOS門電路組合門集成邏輯電路WHATISTTL?TTL與非門的輸入端和輸出端都是三極管結構,所以稱三極管-三極管邏輯電路.即TTL電路或T2L電路.典型TTL與非門:三態(tài)輸出門TSLTRISTATELOGIC

高電平低電平高阻態(tài)●典型應用

1.TSL組成總線結構

2.TSL實現(xiàn)數(shù)據(jù)雙向傳輸WHATISMOS?MOS:金屬氧化物半導體場效應管MOS電路可分為NMOS,PMOS,CMOS相對TTL,有以下特點1.微功耗—CMOS電路的單門靜態(tài)功耗在毫微瓦（nw）數(shù)量級。

2.高噪聲容限—CMOS電路的噪聲容限一般在40%電源電壓以上。

3.寬工作電壓范圍—CMOS電路的電源電壓一般為1.5~18伏。

4.高邏輯擺幅—CMOS電路輸出高電平‘1’的幅度=VDD，邏輯“0”為VSS。5.輸入阻抗高CMOS電路的輸入阻抗大于108Ω,一般可達1010Ω。6.扇出能力強CMOS電路的扇出能力大于507.低輸入電容--CMOS電路的輸入電容一般不大于5PF。8.寬工作溫度范圍—陶瓷封裝的CMOS電路工作溫度范圍為-550C~1250C；塑封的CMOS電路為–400C~850C。9.所有的輸入均有珊保護電路，良好的抗輻照特性等。10.工作速度低11.功耗隨頻率增加顯著增大基本概念Integratedcircuit.集成電路是相對分立元件而言,就是把整個電路的所有元件以及相互之間的聯(lián)接同時制造在一塊半導體芯片上.MPU存儲器I/O運算器控制器ROMRAM總線ABDBCBA/D&D/A定時器/計數(shù)器中斷控制器一個超級芯片電路幾乎包括了所有IC的種類電源IC的封裝packageIC的封裝packageSSOP寬度比SOP窄SOJ相對SOLPLCC相對QFPLCCC(leadlessceramicchipcarrier)

無引線陶瓷芯片載體

STMicroelectronicsEEPROMOrderMemorycapacityInput一個現(xiàn)象???OutputOFFONInputOutputWHOISME?IWASMEMORY!半導體存儲器用于存儲程序、常數(shù)、原始數(shù)據(jù)、中間結果和最終結果存儲容量越大,記憶能力越強存取速度越快,運算速度越快IC中不可或缺的一部份.技術指標1.存儲容量2N－12.最大存取時間

133MZ→?NS3.存儲器功耗(維持功耗、操作功耗)4.可靠性(抗干擾能力)5.集成度(BIT/PCS)INTEL2764集成度為64KBIT/PCSLearningObjectivesAftercompletingthissectionyouwillbeableto:ListthetwokindsofmemoryGivenamemorycharacteristic,determinewhetheritappliestovolatileornon-volatilememoryGivenasamplememoryapplication,determinewhethervolatileornon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryKindsofMemoryMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousDefineVolatileWhatdoestheword“volatile”meantoyou?Non-Volatilevs.VolatileMemoryNon-Volatilevs.VolatileMemoryMEMORYNON-VOLATILEPROMEPROMFLASHE2NANDNORVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerRETAINS

datawith

powerlossLOSES

datawith

powerlossWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?CellPhoneOperatingSystemNon-VolatileWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?CellPhoneScratchMemoryVolatile快速緩衝貯存區(qū)CacheMemory

inaPCWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?VolatileVolatileOperatingSystemforaHandHeldDeviceWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?Non-VolatileWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?緩衝存儲器BufferMemoryinaHigh-endRouterVolatileWhichFitsBest?Wouldnon-volatileorvolatilememorybemoreappropriatehere?DigitalCameraPictureStorageNon-VolatileSectionSummaryYoushouldnowbeableto:ListthetwokindsofmemoryGivenamemorycharacteristic,determinewhetheritappliestovolatileornon-volatilememoryGivenasamplememoryapplication,determinewhethervolatileornon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryLearningObjectivesAftercompletingthissectionyouwillbeableto:Listthefivekindsofnon-volatilememoryMatchalistofcharacteristicstothefivekindsofnon-volatilememoryGivenasamplememoryapplication,determinewhichkindofnon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryNon-VolatileMemoryMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousROMRead-OnlyMemoryBitpatternispermanentlyrecordedduringthemanufacturingprocess(requiresamask)Exampleuse:PagerOperatingSystemReadSpeed: GoodWriteSpeed: N/ASize: Upto4MbPower: LowFromByteMagazine,April1996PROMProgrammableRead-OnlyMemoryProgrammedusingaPROMprogrammerProgrammersendselectricsignalsatahighvoltagetospecificROMcells,effectivelyblowingfusesinthemCanbemodifiedonce-OneTimeProgrammable(OTP)Exampleuses:ColortableinflatpanelTVCableSetupBoxReadSpeed: OKWriteSpeed: PoorSize: 256Kb-8MbPower: VariesEPROMErasableProgrammableRead-OnlyMemoryProgrammedusinganEPROMprogrammerCancomeinwindowedpackagetoallowerasing/programmingErasedusingUltraviolet(UV)raysLimitedprogrammabilityMoreexpensivethanPROMIncludeEEPROMandUVEPROMExampleuses:MemoryforprototypesofIndustrialapplicationsReadSpeed: OKWriteSpeed: PoorSize: 256Kb-4MbPower: HighEEPROMElectricallyErasableProgrammableRead-OnlyMemoryProgrammedusingaprogrammerorwithJTAG(CPLD)CanbeerasedandreprogrammedbyapplyinghigherthannormalelectricalvoltageCanreplacepartoftheprogramming--noneedtoeraseitallNoneedtoremovewhenerasingorprogrammingExampleuses:PrimarilyusedindevelopmentReadSpeed: OKWriteSpeed: Poor-ModSize: 256Kb-4Mb

(to1Mbforserial)Power: LowUVEPROM紫外線擦洗FlashMemoryVariationofEEPROMErased/programmedin“blocks”CanreplaceblocksofthedataNoneedtoremovetoprogramSomeEEPROMsalsohavethisProgrammedviaEEPROMprogrammerorseriallyviaaprocessororJTAGExampleuses:DigitalCameraPictureStorageSmartMediabyToshiba(seeleft)ReadSpeed: OKWriteSpeed: PoorSize: 1Mb-64MbPower: HighBitsvs.Blocks(MinimumProgrammingSize)bitbyteblockMostNon-VolatileMemory-programmedinbitsVolatileMemory(RAM)-programmedinbytesFLASH-programmedinblocksROMTypesSectionSummaryYoushouldnowbeableto:Listthefivekindsofnon-volatilememoryMatchalistofcharacteristicstothefivekindsofnon-volatilememoryGivenasamplememoryapplication,determinewhichkindofnon-volatilememoryismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryLearningObjectivesAftercompletingthissectionyouwillbeableto:ListthetwoprimarykindsofvolatilememoryDescribethedifferencebetweenSRAMandDRAMGivenasamplememoryneed,determinewhetherSRAMorDRAMismoreappropriateMatchalistofcharacteristicstotypesofSRAMGivenasampleSRAMapplication,determinewhetherSYNC,ASYNC,ormicropower

SRAMismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemoryVolatileMemoryMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousWhatIsRAM?RandomAccessMemoryVolatile-DatalostwhenpowergoesoutAllowsnon-sequentialaccessCanaccessthedataatanylocationwiththesamespeedDRAMDynamicRandomAccessMemoryDataisstoredasachargeDatamustberefreshedconstantlyAdvantagesHugedensitiespossibleLessexpensiveDisadvantagesSlowaccesstimes(around60nanosec)HigherpowerconsumptionthanSRAMDRAMCharge“l(fā)eaks”outofcapacitorandmustberefreshedOnetransistorandonecapacitorpermemorycellWordLineBitLinecapacitortransistor01DRAMCellDesign1-bitDRAMCellVoltagestoredinaDRAMcellafterwritingandrefreshoperationsVcapHIGHLOW0VVccrefreshrefreshrefreshrefresh‘1’Written‘0’storedtime01SRAMStaticRandomAccessMemoryNoneedtorefreshthedataDatastoredascurrentinatransistorAdvantagesLowerpowerconsumptionthanDRAMFasteraccesstimes(aslowas10nanosec)MorereliablethanDRAMDisadvantagesLessdensity(SRAMcellislargerthanDRAMcell)MoreexpensivethanDRAMDRAMvs.SRAMDynamicForgetsdatain5/100thsofasecondCheapestformofmemoryLargerdensitiesavailableStaticRetainsdataaslongasthepowerismaintainedFasttorespondLowPowerMorereliableDRAMSRAMCacheMemory

inaPCWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?VolatileSRAM(speedisimportant)MainMemory

inaPCWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?VolatileDRAMWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?CellPhoneDataSRAM(powerisimportant)PrinterBufferMemoryWhichFitsBest?WouldDRAMorSRAMbemoreappropriatehere?DRAM3KindsofSRAMMEMORYNON-VOLATILEPROMEPROMFLASHEEPROMVOLATILEROMDRAMSRAMAsynchronousSynchronousMicropowerAsynchronousSynchronousAsynchronousvs.SynchronousAsynchronousPizzaOrder“Bringmeapizza

assoonas

itisready.”Asynchronousvs.SynchronousSynchronousPizzaOrder“Bringmeapizza.Meetmeatthecornerof5thandElmin30minutes.”AsynchronousSRAMNoclocking--nottimed(1in,1out)HeavilyusedinlegacysystemsCommonlycalled“CommodityMemory”UsedinapplicationswherespeedisnotcriticalAdvantagesInexpensiveReadilyavailableLegacytechnology(beenaroundalongtime)Nolatency(bitsmovetogether)DisadvantagesHavetowaittodoanythingLessdensethanDRAMMoreexpensivethanDRAMSlowaccesstimescomparedtoSyncSRAMNewerhighdensityproductsavailableonlyinSyncSynchronousSRAMDatasynchronizedtoacommonclock(pipelined)Usedforhigh-performanceapplicationsthatrequirefasterspeedsAdvantagesNew&continuedimprovementtothetechnologyPredictabletimingFasterspeedpossibleDisadvantagesMoreexpensivethanasynchronousNotmadeinlowdensities(under1Mb)AddslatencytodataaccessMicropowerSRAMExtremelylowpowerneedsCurrentlyakindofasynchronousSRAMWillbeasynchronousandsynchronousinthefutureSlowaccesstime(70nsorslower)AdvantagesLowpowerneedsinstandbyNewimprovementsallthetimeDisadvantagesSlowaccesstimesMicropowerBatteryLifeBatteryLife1999 2000 2001 2002LowPowerHigherFrequencyLowPowerTypesofSRAMWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?CellPhoneDataMicropowerWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?ModemAsyncAsynchronousSRAMBufferMemoryinaHigh-endRouterWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?SyncWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?CellPhoneOperatingSystemNoneTelecommunicationsSwitchingSystemWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?Sync(performance)3GCellularBaseStationWhichFitsBest?WouldAsync,Sync,orMicropowerSRAMbemoreappropriatehere?SyncSectionSummaryYoushouldnowbeableto:ListthetwoprimarykindsofvolatilememoryDescribethedifferencebetweenSRAMandDRAMGivenasamplememoryneed,determinewhetherSRAMorDRAMismoreappropriateMatchalistofcharacteristicstotypesofSRAMGivenasampleSRAMapplication,determinewhetherSYNC,ASYNC,ormicropower

SRAMismostappropriateIntroductionKindsofMemoryNon-VolatileMemoryVolatileMemory

HowisanICManufactured?IC的成長歷程ICFABProcessFabSlicedWafersCompletedWaferLayersConductive PolySiliconMetalInsulatingPhotoResistPatternPlasmaEtch等離子酸刻RepeatProcessWaferwithMetalCircuitPatternICFABProcess晶圓排序WaferSortWaferICASSEMBLYProcess目檢SAW粘貼BOND封裝MOLDTRIMANDFORMICTESTProcessTestTESTProgramICDIMENSIONTESTProcessLeadscanGoodDeviceRejectedDeviceOpticalScanningEquipmentisusedtoexamineeachleadtodetermineifit’spitch,angleandcoplanarityarewithinspecifiedlimits.ICMARKProcessMarkBlankDeviceLaserMarkInkMarkCypressSHIPPINGMethodsStandardTubesTapeandReelStandardTrayDryPackICMANUFACTURINGProcessFABASSEMBLYTESTFPOF/G(3-5weeks)(1-2weeks)(1week)(2weeks)DieBankBinInventoryWaferFabricationDeviceAssembly&PackagingElectricalClassTestFinalProcessingOperationsFinishedGoodsAreasinvolvedintheStandardManufacturingProcess:InventoryStagingLocationInventoryStagingLocation(4-5weeks)(3-5weeks)(7-10weeksTotalCycletime)PACKAGINGCAPABILITYPKGPKGwidthavailableleadcountPDIP300mil8,14,16,18,20,24,28,32,64600mil22,24,28,32,40,42,48,56SOJ300mil20,24,26,28,32400mil24,28,32,36,40,42,44SOJ-TapeLOC300mil24400mil42SOP8,14,16,24,28,32SSOP48,56TSOP(I)28,32,40,48TSOP(II)20,24,40,44,50,54TSOP(II)-TapeLOC40,44PKGbodysizeavailableleadcountPLCC20,28,44,52,68,84QFP10X10mm44,48,5214X20mm64,80,100,12828mmSQ120,128,132,144,160,208,25632mmSQ24040mmSQ304LQFP7mmSQ32,44,4810mmSQ44,64,8012mmSQ80,10014mmSQ64,80,100,120,12814X20mm100,12820mmSQ144,160,17624mmSQ160,176,21628mmSQ160,208,256TQFP7mmSQ4810mmSQ44,64,8012mmSQ80,10014mmSQ64,80,100,120,128In-line&staggeredpadsconfigurationBGApadsconfigurationPKGPKGsizeballpitchavailableballcountPBGA14X22mm1.27mm119,15315mmSQ1mm156,196(fullmatrix)17mmSQ192,208,256(fullmatrix)19mmSQ256(fullmatrix)23mmSQ1.5mm120,144,160,169(fullmatrix)27mmSQ1.5mm225(fullmatrix)1.27mm256~36531mmSQ1.27mm272~40935mmSQ313~55637.5mmSQ493~61840mmSQ520~665HSBGA27mmSQ1.27mm256~36531mmSQ272~40935mmSQ313~55637.5mmSQ493~61840mmSQ520~665HSBGA27mmSQ1.27mm256~36531mmSQ272~40935mmSQ313~55637.5mmSQ493~61840mmSQ520~665PKGPKGsizeballpitchavailableballcountViperBGA27mmSQ1.27mm25635mmSQ35240mmSQ432PKGavailableballcountL(F)BGA66~256T(F)BGA36~256PKGavailableballcountFilmBGA112,132,144,180,208,280mBGA62FC-CSP36~200COS54BCC/BCC++8,16,20,24,32,48,64

OUTLINE&DIMENSIONSOJFig.160umin-lineballbondprofileFig.2Straightwiresfrom170to200mil(4.3to5.1mm)inlengthwith60umin-linepadpitchFig.3Aftermolding.WiresweepisundergoodcontrolFig.6StaggeredbondFig.4Slanted&Rightfan-out(d1isnarrowerthand2)

PROCESSFLOWSTANDARDMATERIAL

WAFERMOUNTWAFERSAW/CLEAN2ndOPTICAL(GATE)DIEATTACHEPOXY: ABLESTIK8355FSUBSTRATE:BTRESINDIEATTACHCUREPLASMACLEANWIREBONDGOLD WIRE:99.99%Au3rdOPTICAL(GATE)PLASMACLEANMOLD COMPOUND: PLASKONSMT-B-1 Series/TOSHIBAKE-1100A TOPSIDEMARKINGWHITEINKPOSTMOLDCURESOLDERBALLMOUNT SOLDERBALL:Sn/Pb=63/37FLUXCLEAN FLUX:WATERSOLUBLESINGULATIONFINALVISUALINSPECTION(GATE)PACKING BAKEABLEJEDECTRAYOPTIONALPROCESS:WAFERBACKGRINDING/DRYPACKING常用IC封裝介紹BGAIC封裝介紹

PROCESSDEVELOPMENTProcessforICpackagingisupdatedsoonforseveralreasons.Thefirstistheever-reducingscaleinwaferfabricationtechnology.Thesecondisthedemandsforhighcircuitryintegration,andthethirdisthedemandsforhighperformance.MCM,oneoftheprominentpackagingtechnology,canprovidehighI/Obyintegratingtwoormorechipsintoasinglepackage.2Dand3DMCMsareavailablenow.FinePitchisrelatedtotheprocessissuesabouthowmuchthebondpadcanbenarroweddown,andhowtodesignthebondpadsinordertomeettheminimumcriterionofwirebonding.CurrentwirebondingcapabilityofASEisalsopresented.FlipChip/WaferBumpingisthesolutionstoKGD(knowngooddie)onCOB(chiponboard),andprovidesthedensestI/Opadroutingonwholechip.Flipchipalsoelimin