半導(dǎo)體制造技術(shù)導(dǎo)論（第二版）蕭宏 第8章 離子注入工藝

8.3離子注入工藝設(shè)備8.4離子注入的應(yīng)用8.5本章小結(jié)2023-04-261第8章離子注入工藝本章主要內(nèi)容8.1離子注入的介紹8.2離子注入中的機制集成電路工藝流程材料設(shè)計光刻板IC工廠測試封裝終測熱處理光刻刻蝕去

光刻膠離子注入去光刻膠金屬化化學(xué)機械研磨介質(zhì)沉積晶圓28.1

離子注入的介紹3本節(jié)主要內(nèi)容摻雜的兩種方法離子注入的元素摻雜的兩種方法4Two

ways

to

dope(摻雜的兩種方法)DiffusionIon

implantationDiffusion(擴散)First

used

to

dope

semiconductor(最

用于半導(dǎo)體摻雜Performed

in

high

temperature

furnace(高溫熔爐)Using

silicon

dioxide

mask(用二氧化硅做掩膜)Isotropic

process(各向同性工藝)

Can’t

independently(獨立地)control

dopant

profileand

dopant

concentration(濃度)5摻雜的兩種方法—擴散摻雜的兩種方法—擴散Dopant

Oxide

Deposition(摻雜氧化物淀積)6摻雜的兩種方法—擴散Oxidation(氧化)7摻雜的兩種方法—擴散Drive-in(推進)8Ion

Implantation(離子注入)

Introduced

to

semiconductor

manufacturing(半導(dǎo)體制造)in

mid-1970s

Independently

control(單獨控制)dopant

profile(摻分布)(ion

energy,離子能量)and

dopant

concentrati(摻雜濃度)(ion

current

times

implantation

time)Anisotropic

dopant

profile(各向異性摻雜分布)

Easy

to

achieve(獲得)high

concentration

dope

of

headopant

atom

such

as

phosphorus(磷)and

arsenic(砷).9摻雜的兩種方法—離子注入摻雜的兩種方法—離子注入Misalignment(不對準)of

the

Gate10摻雜的兩種方法—離子注入Ion

Implantation,Phosphorus(磷)11摻雜的兩種方法—兩者比較12Comparison

of

Implantation

and

Diffusion摻雜的兩種方法—兩者比較Comparison

of

Implantation

and

Diffusio13(高溫，硬掩膜)(低溫，光刻膠掩膜)(各向同性摻雜分布)(各向異性摻雜分布)(不能獨立控制摻雜濃度和結(jié)深)(能獨立控制摻雜濃度和結(jié)深)(批量處理)(批量和單晶圓處理均可)離子注入的元素14Ion

Implantation(離子注入)rn-type:

P,As,

Sbp-type:

BSi

or

GeON改變導(dǎo)電控制結(jié)深和濃度分布SOI防止雜質(zhì)擴散8.3離子注入工藝設(shè)備8.4離子注入的應(yīng)用8.5本章小結(jié)2023-04-2615第8章等離子體工藝本章主要內(nèi)容8.1離子注入的介紹8.2離子注入中的機制8.2

離子注入的機制16本節(jié)主要內(nèi)容阻滯機制離子射程溝道效應(yīng)損傷與退火Two

Stopping

Mechanism(兩種阻滯機制)Nuclear

stopping

(原子核阻滯)Scattered

significantly(散射明顯)Causes

crystal(晶體)structure

damageElectronic

stopping

(電子阻滯)Incident

ion

path(入射離子路徑)is

almostunchangedEnergy

transfer(能量轉(zhuǎn)移)is

very

smallCrystal

structure

damage

is

negligible(可17阻滯機制Stopping

Mechanism(阻滯機制)The

total

stopping

power

(總的無阻力)Sn:nuclearstopping

(原子核阻滯)Low

E(低能),high

A(高原子序列)ionSe:electron

stopping

(電子阻滯)High

E(高能),low

A(低原子序列)ion阻滯機制181Stopping

Mechanism(阻滯機制)阻滯機制(隨機碰撞)(溝道效應(yīng))(反向散射)920Stopping

Power

and

Ion

Velocity(阻滯力和離子速度)阻滯機制(離子速度)(原子核阻滯)(阻滯力)(電子阻滯)離子射程21(離子束)(離子路徑)(投影射程)Ion

Trajectory

and

Projected

Range(離子軌跡和投影射程)(碰撞)(真空)Ion

Projection

Range(投影射程)離子射程(投影射程)22(濃度)離子射程23Barrier

Thickness

to

Block

200

keV

Ion

Beam(阻擋200

keV離子束的阻擋層厚度)離子射程24Channeling

Effect(溝道離子)(碰撞離子)25溝道效應(yīng)Ways

to

avoid

channeling

effect(避免溝道效應(yīng)的辦法)Tilt

wafer(傾斜晶圓),7°is

most

commonly

usedScreen

oxide(掩蔽氧化層)Pre-amorphous

implantation(提前非晶化注入)26溝道效應(yīng)27Shadowing

Effect(陰影效應(yīng))(離子束)溝道效應(yīng)(襯底)(摻雜區(qū))(陰影區(qū))(多晶硅)溝道效應(yīng)(襯底)(摻雜區(qū))(陰影區(qū))28(多晶硅)7度0.5

mmExercise(離子束)陰影區(qū)寬度是多少？溝道效應(yīng)Shadowing

Effect(陰影效應(yīng))29(襯底)(摻雜區(qū))(退火和擴散之后)(多晶硅)Post-collision

Channeling(碰撞后的溝道效30(碰撞)

(溝道效應(yīng))溝道效應(yīng)(碰撞)31溝道效應(yīng)Post-collision

Channeling(碰撞后的溝道效(碰撞)(溝道效應(yīng))(碰撞)Question

and

DiscussionWhy

don’t

people

use

channeling

effectto

create

deep

junction

without

high

ionenergy?32溝道效應(yīng)Lattice

Damage

With

One

Ion(一個離子導(dǎo)致的晶格損傷)33損傷與熱退火(輕離子)(重離子)(損傷區(qū))Anneal(退火)損傷與熱退火34Rapid

Thermal

Annealing

(RTA)

Rapid

thermal

process(RTP)is

widely

used

for

post-implantation

anneal(離子注入后的退火)

RTA

is

fast

(less

than

a

minute,不到一分鐘),betterWTW

uniformity(晶圓與晶圓之間的均勻性),betterthermal

budget

control(熱預(yù)算控制),and

minimized

tdopant

diffusion(使雜質(zhì)擴散最小化)35損傷與熱退火RTP

and

Furnace(高溫爐)Annealing損傷與熱退火36Question

and

DiscussionWhy

can’t

the

furnace(高溫爐)temperaturbe

ramped-up(升溫)and

cooled-down(冷卻)

as

quickly

as

RTP

system?37損傷與熱退火8.3離子注入工藝設(shè)備8.4離子注入的應(yīng)用8.5本章小結(jié)2023-04-2638第8章等離子體工藝本章主要內(nèi)容8.1離子注入的介紹8.2離子注入中的機制8.3

離子注入的工藝設(shè)備39本節(jié)主要內(nèi)容離子注入機(自學(xué))氣體、電機、真空、控制系統(tǒng)(自學(xué)離子束系統(tǒng)(自學(xué))離子注入機4041離子注入機(氣艙)(電機系統(tǒng))(磁分析器)(真空泵)(離子源)(離子束(電機系統(tǒng))(等離子體注入系統(tǒng))(真空泵離子束系統(tǒng)42Ion

Implantation:Beam

line(離子束)Ion

source(離子源)Extraction

electrode(抽取電極)Analyzer

magnet(磁分析儀)Post

acceleration(后端加速)Plasma

flooding

system(等離子體注入系統(tǒng))End

analyzer(終端分析儀)離子束系統(tǒng)43離子束系統(tǒng)Analyzer(分析儀)(磁場，方向向外)44(離子束)(更大的質(zhì)荷比)(合適的質(zhì)荷比)(合適的質(zhì)荷比)(飛行管道)離子束系統(tǒng)Ions

in

BF3

Plasma(BF3中的離子束)45Question

and

Answer(問題)Q:10B+is

lighter

and

can

penetrate(

透)deeper than

11B+,why

don’t

use

10B+in

deep

junction implantation??□A:10B+ion

concentration

is

only

1/4

of

11B+。46離子束系統(tǒng)離子束系統(tǒng)Bending

Ion

Trajectory(彎曲離子路徑)(中性原子路徑)(偏置電極)47(離子路徑)離子束系統(tǒng)Charging

Effect(電荷效應(yīng))(離子路徑)48離子束系統(tǒng)49(燈絲電流)Plasma

Flooding

System(等離子體注入系統(tǒng))(鎢燈絲)(直流電源)離子束系統(tǒng)50(電子槍)(熱燈絲)Electron

Gun(電子槍)(二次電子靶)(二次電子)Wafer

Handling(晶圓處理)Ion

beam

diameter(離子束直徑):~25

mm(~1”),Wafer

diameter(晶圓直徑):300

mm(12”)or

larger

Needs

to

move

beam

or

wafer,or

both,to

scan

ionbeam(掃描離子束)across

the

whole

waferSpin

wheel(轉(zhuǎn)輪)Spin

disk(轉(zhuǎn)盤)Single

wafer

scan(單個晶圓掃描)51離子束系統(tǒng)Spin

Wheel(轉(zhuǎn)輪)52離子束系統(tǒng)Spin

Disk(轉(zhuǎn)盤)離子束系統(tǒng)53Single

Wafer

Scann(單個晶圓掃描)離子束系統(tǒng)5455離子束系統(tǒng)Beam

Stop(離子束阻擋器)(石墨)(磁體)(法拉第電流探測器)8.3離子注入工藝設(shè)備8.4離子注入的應(yīng)用8.5本章小結(jié)2023-04-2656第8章等離子體工藝本章主要內(nèi)容8.1離子注入的介紹8.2離子注入中的機制8.4

離子注入的應(yīng)用57本節(jié)主要內(nèi)容CMOS工藝中的應(yīng)用其他的應(yīng)用離子注入的問題離子注入的評估和安全性(自學(xué))離子注入的發(fā)展趨勢CMOS

Applications(CMOS中的應(yīng)用)Well

Implantation(阱區(qū)注入)VT

Adjust

Implantation(閾值調(diào)整注入)

Lightly

Doped

Drain(LDD)Implantation(輕摻雜漏注入)S/D

Implantation(源、漏注入)58CMOS工藝中的應(yīng)用Well

Implantation(阱區(qū)注入)High

energy

(MeV),

low

current

(1013/cm2)CMOS工藝中的應(yīng)用59VT

Adjust

Implantation(閾值調(diào)整注入)Low

Energy

,

Low

CurrentCMOS工藝中的應(yīng)用60CMOS工藝中的應(yīng)用61Lightly

Doped

Drain(LDD)Implantation(輕摻雜漏極注入)Low

energy

(10

keV),

low

current

(1013/cm2)SDE，Source/Drain

Extension(源漏擴展)S/D

Implantation(源、漏注入)Low

energy

(20

keV),

high

current

(>1015/cm2)CMOS工藝中的應(yīng)用62IonImplantation

Processes(離子注入工藝63CMOS工藝中的應(yīng)用WellHighLowSource/DrainLowHighVT

AdjustLowLowLDDLowLow其他的應(yīng)用CMOS

on

SOI

Substrate(襯底)64Deep

Trench

Capacitor其他的應(yīng)用65光刻膠硬化圖形化磁碟制造EUV光刻板制造太陽能電池66其他的應(yīng)用離子注入的問題67Process

Issues(工藝問題)Wafer

charging(晶圓帶電)Particle

contamination(離子污染物)Elemental

contamination(元素污染物)Wafer

Charging(晶圓帶電)Break

down

gate

oxide(柵氧擊穿)Dielectric

strength

of

SiO2:

~10

MV/cm100

?