硫酸銅填孔電鍍理論

硫酸銅填孔電鍍理論-有機物質(zhì)成分

OrganicadditivesOrganicadditivespeciesBrightener/acceleratorCarrier/suppressorLevellerSuppressorAccelerator電鍍反應(yīng):(摘要)可溶解性陽極Function1ReducetheactivationenergyandincreaseCudepositionrateAdditivecanbemonitoredbyCVSusingstandardadditionmethodorHullCellAdditiveChemistryFunction2ThesidechainsontheadditivemoleculehasabarrierforCu+todepositontothesurface.Theprobabilitytofillinstepsandvacanciesonthesurfaceincreases.AdditiveChemistry(Cont.)Function3Thecoverageoftheadditiveonthesurfaceenhancednucleationandformationofrandomlyorientedgrains.Allowstheformationamicrostructurewithinterlockingofrandomlyorientedgrains.AdditiveChemistry(Cont.)

DecompositionofadditiveonCusurface,suchasanode2S(-1)+2e-

2S(-2)CuCu2++2e-OccurredmainlyduringbathidlingAirbubblingduringidlingcanusuallysolvetheby-productformationissueControlofadditivecontentBy-productspeedsuptheCudepositionatleast20timesAbathdominatedbytheby-productgivescolumnarmicrostructureControlofAdditivecontent(Cont.)Additive濃度對電鍍效率的影響硫酸銅填孔電鍍:LevelerdominateV.SnoLeveler系統(tǒng)比較優(yōu)點缺點Nolevelerdominate鍍層不純物較低,擴散反應(yīng)(主導(dǎo)填孔)及適量的Additive控制反應(yīng)容易分析控制Carriersuppression主導(dǎo)填孔機制.對流態(tài)較敏感.需良好的Airflow或噴流.Levelerdominate對流態(tài)較不敏感.對Additive副產(chǎn)物較不敏感.Level/Additive比例主導(dǎo)填孔機制,但分析不易.鍍層不純物相對較高,Natom.物性相對較差.三劑控制相對複雜電鍍效率相對較差MechanismofthinkneeCarrier#1Brightener#1levelerCarrier#2Brightener#2CompetitorsMicroFillViaFilldepositionmodeMechanismofviafilling

BrightenerCarrierPlatingsoln.Cudepo