專(zhuān)業(yè)外語(yǔ)期末復(fù)習(xí)-2015

期末復(fù)習(xí)專(zhuān)業(yè)外語(yǔ)考試題型一、漢譯英（20分）10個(gè)詞，每個(gè)詞2分二、英譯漢（20分）10個(gè)詞，每個(gè)詞2分三、翻譯句子（40分）10個(gè)句子，每個(gè)句子4分四、翻譯（20分）一整段或者幾個(gè)句子考試注意事項(xiàng)一、考試時(shí)間：2個(gè)小時(shí)

7月11日9：00-11：00經(jīng)信F2二、不允許帶詞典（包括電子詞典）三、手機(jī)關(guān)機(jī)（用手表看時(shí)間）四、不允許上廁所五、交卷要在一個(gè)小時(shí)十分鐘之后?。?！復(fù)習(xí)題一、掌握（給出漢語(yǔ)可以寫(xiě)成英文）semiconductor：半導(dǎo)體photoconductivity：光電導(dǎo)性（率）rectification：整流intrinsicproperties：本征特性Halleffect：霍爾效應(yīng)currentcarriers：載流子carriermobility：載流子遷移率silicon：硅（Si）germanium：鍺（Ge）solarcell

：太陽(yáng)電池一、掌握（給出漢語(yǔ)可以寫(xiě)成英文）alkali

halide：堿金屬鹵化物transistor：晶體管solid-statelaser

：固體激光器opticalfiber：光纖quantummechanics：量子力學(xué)potentialbarrier：勢(shì)壘，位壘periodiclattice：周期點(diǎn)陣activationenergy：激活能electron-holepairs：電子、空穴對(duì)dislocation：位錯(cuò)一、掌握（給出漢語(yǔ)可以寫(xiě)成英文）ionimplantation：離子注入fieldeffect-transistor：場(chǎng)效應(yīng)晶體管wafer：晶片Wetchemicaletching：濕法化學(xué)刻蝕diffractioneffect：衍射效應(yīng)birefringent：雙折射的indexofrefraction：折射率focallength：焦距

donor：施主acceptor：受主一、掌握（給出漢語(yǔ)可以寫(xiě)成英文）interferencecontrast：干涉相稱(chēng)valenceelectron：價(jià)電子Liquidphaseepitaxy(LPE)：液相外延Fieldeffect-transistor(FET)：場(chǎng)效應(yīng)晶體管Integratedcircuit(IC)：集成電路Light-emittingdiode(LED)：發(fā)光二極管Metal-Oxide-Semicondutor(MOS)：金屬氧化物半導(dǎo)體；physicalvapordeposition(PVD)：物理氣相沉積；chemicalvapordeposition(CVD)：化學(xué)氣相沉積numericalapertures(NA)：數(shù)值孔徑negativetemperaturecoefficientofresistance:電阻的負(fù)溫度系數(shù)silversulphidel:硫化銀poly-crystallineingots:多晶塊titanium:鈦（Ti）zirconium：鋯（Zr）tellurium：碲（Te)leadsulphide:硫化鉛ironpyrites：黃鐵礦selenium：硒（Se）copper：銅二、認(rèn)識(shí)（給出英語(yǔ)能翻譯成漢語(yǔ)）Transmissionpolarizedlightmicroscopy：透射偏光顯微術(shù)wavelength：波長(zhǎng)radioreceivers：無(wú)線(xiàn)射頻接收器、無(wú)線(xiàn)電接收機(jī)galena：方鉛礦photocell：光電管、光電池copperoxide：氧化銅crystaldetector：晶體檢波器vacuumtube：真空管infrareddetector：紅外探測(cè)器fieldsofforce：力場(chǎng)二、認(rèn)識(shí)（給出英語(yǔ)能翻譯成漢語(yǔ)）N-folddegenerate：N度簡(jiǎn)并oscillator：振子Pauliprinciple：泡利不相容原理excitedstates：激發(fā)態(tài)potentialbarrier：勢(shì)壘、位壘magnesium：鎂filledband：滿(mǎn)帶emptyband：空帶thermallyexcited：熱激發(fā)intrinsicconduction：本征導(dǎo)電二、認(rèn)識(shí)（給出英語(yǔ)能翻譯成漢語(yǔ)）二、認(rèn)識(shí)（給出英語(yǔ)能翻譯成漢語(yǔ)）X-raytopography：X射線(xiàn)形貌學(xué)OpticalMicroscopy：光學(xué)顯微術(shù)（鏡）stackingfault：層錯(cuò)Etchant：蝕刻劑crystallography：結(jié)晶學(xué)polishingetch：拋光腐蝕selectiveetch：選擇腐蝕avalanche：雪崩anodic：陽(yáng)極的cathodic：陰極的infraredspectroscopy：紅外光譜學(xué)二、認(rèn)識(shí)（給出英語(yǔ)能翻譯成漢語(yǔ)）Cr：chromium：鉻depthoffield：景深，視場(chǎng)深度resolution：分辨率

compoundmicroscope：復(fù)顯微鏡magnification：放大倍數(shù)（倍率）transmittedlightmicroscope：透射式光學(xué)顯微鏡reflectionmicroscopy：反射顯微技術(shù)

Czochralskigrowth：提（直）拉法生長(zhǎng)

polarize：偏振片、起偏器prism：棱鏡三、句子1、Itis,nevertheless,ahightributetotheskillandcareofmanyexperimentersthat,inspiteofthis,semiconductorshadbeenrecognizedasadistinctclassofsubstancesandtheirmainpropertiesappreciatedlongbeforeacomprehensivetheorywasavailabletoaccountforthem.P12、Theseeffectsarenowknowntobeduetooxidefilmsoractualgapsseparatingtheindividualcrystalsbutledtothemetalstitaniumandzirconiumoncebeinglistedassemiconductors.P13、Itmustbeadmitted,however,thatnoinfalliblecriterionwasavailabletillthequantumtheoryofsolidsgaveanunderstandingofthereasonsforthevariouspropertiesobserved.P14、AreviewofthisearlyworkhasbeengivenbyK.Lark-Horowitztogetherwithaveryextensivebibliographycontainingover350references.EarlierreviewsbyB'Guddenalsodealextensivelywiththisphaseanddiscussinsomedetailtheproblemsofidentifyingsemiconductors.

P25、Thelatter,whichisgenerallyknownasthecarriermobility,andwhichweshalldefinemorepreciselylatergenerallytendstodecreaseasthetemperatureisraised,especiallyatthehighertemperatures,andthisaccountsforthedecreaseinconductivityofmetalswithincreasingtemperature.

P36、Thesubstancesconcernedweremainlymetallicoxidesandsulphidesandthe‘defect’semiconductorswerethosewithametalliccontentlessthanthatcorrespondingtostoichiometriccomposition,i.c.oxidizedcompounds.

P47、Theimportanceofthisworkwasinshowingthevitalpartplayedbysmalldeviationsfromstoichiometriccompositionindeterminingthepropertiesofcompoundsemiconductors.

P48、Althoughtheyarenotstrictlysemiconductorsbutinsulators,mentionmustbemadeofthelargeamountofresearchcarriedoutbyR.W.Pohlandhiscollaboratorsonthealkalihalides,sincethishelpedgreatlytoclarifymanyofthepropertiesofsemiconductors.P49、Muchoftheuncertaintyoftheearlyworkonsemiconductorsarosethroughafailuretodifferentiatebetweeneffects,whichariseinthebulkofthematerial,andthose,whicharecharacteristicofthesurfaceoroftheinterfacebetweentwodifferentmaterials.P510、Theuseofsinglecrystalshasenablednotonlytheseparationofthebulkandsurfacepropertiesbuthasalsoenabledthesurfaceandtheinterfacebetweentwotypesofsemiconductor,orbetweenasemiconductorandametal,tobestudiedinmuchgreaterdetail.P511、Morerecentlythestudyofamorphoussemiconductorshasledtoafullerappreciationofthoseproperties,suchashighcarriermobility,thatdependprincipallyonthequalityofthecrystalsbeingstudiedandthosemorefundamentalpropertieswhichdonotdependonlong-rangeorder.P512、Thephotoconductivepropertiesofselenium,andofcopperoxide,havebeenusedtoprovideexposuremetersforphotographyandphotocells,whichareusedinthefilmindustryfortransformingthemarkingsonthesoundtrackintoelectriccurrentsforimplicationandreproductionbyloud-speakers.P513、Thediscoverythatafinewire,or‘cat’swhisker,incontactwithacrystalofsemiconductingmaterialmadeanexcellentrectifierforhigh-frequencycurrentsledtoagreatincreaseinthesensitivityofradioreceivers,andthistypeofdevicewaswidelyusedintheearlydaysofbroadcasting.P614、Themodernsuccessortothetransistoristheintegratedcircuit(IC.)inwhichmanytransistorsandtheirassociatedcomponentssuchasresistors,capacitorsetc.areproducedbycontrolleddiffusionofimpuritiesintoasmall‘chip’ofsilicon.P715、Heretheseforcesaresupposedtoattracttheelectronstronglyifitmovesoutsidetheboundary,andinthesimplestformofthetheoryitisassumedthattheysetupanimpenetrablepotentialbarrierwhichholdstheelectronsinthesolid.

P816、InSummerfield’stheory,theallowedenergylevelsforthevalenceelectronsofacrystalofmacroscopicdimensionslieveryclosetogetherandtheirvaluesextendfromnearlythebottomofthepotentialtroughinwhichtheelectronsmovetoindefinitelyhighvalues.

P917、IfnowwehaveNatomsinacrystal,andweassumethecrystaltobeexpandedsothatthelatticespacingbecomesverygreat,thentheallowedenergylevelswillbejusttheatomicenergylevelswhich,forthemoment,weshallassumetobenon-degenerate,i.e.eachhasaseparateenergy.

P1118、Thisnotonlyexplainswhy‘inner’electronsdonotcontributetoconductionbutitgaveWilsonthecluetotheessentialdeferencebetweenmetalsontheonehandandinsulatorsandsemiconductorsontheother.P1219、Mostofthesubstanceswithwhichweshallbeconcernedhavesuchastructure,butmaynotalwaysconsistoflargesinglecrystalsbutofaggregatesofverysmallcrystalswithrandomorientation.

P1320、Thenumberofexcitedelectronswouldincreasewithtemperatureinamannergovernedbyaprocesshavingan‘a(chǎn)ctivationenergy’,oftheorderofΔEandweshouldexpectarapidincreaseoftheconductivitywithtemperature.P1421、AsweshallalsoseelatertheeffectofverysmallamountsofimpuritycanhaveamarkedeffectonthisactivationenergysothatmaterialswhichhaveconsiderablygreatervaluesofAEmaybehaveassemiconductorswhentheycontaincertain‘a(chǎn)ctive’impurities.P1422、IfweassumethatthevariationwithTofthemobilityofelectronsandholesinanelectricfieldissmallcomparedwiththevariationintheexponentialfactorin(4)thenwehavefortheconductivityσ,whichisthensimplyproportionaltothenumberofcarriers,avariationoftheform.

P1523、Inmanyinstances,itisfoundthattheenergyrequiredtoexciteanelectronintotheconductionbandfromadonorlevelissosmallthattheelectronsfromall,theavailabledonorlevelsareexcitedandareintheconductionbandatroomtemperature.

P1624、Hence,forasemiconductorinthisconditiontheresistancewillincreasewithincreasingtemperature,tillatemperatureisreachedatwhichtheintrinsicelectronsbegintopredominate,whenitwillbegintofallexponentiallyinthemanneroncethoughttobecharacteristicifsemiconductors.

P1625、Whenlightfrequencyishighenoughsothataquantumabsorbedbyavalenceelectronhassufficientenergytoraiseitfromthetopofthefullbandtotheconductionband,extracarriersarecreatedandtheseleadtoincreasedconductivity.P1726、Itwillbeclearfromtheabovecalculationthatifgermaniumistobeintrinsicatroomtemperatureitmustbefreefromimpuritiesgivinglevelsneartheconductionbandtobetterthanonepartin109.

P1827、Itisanticipatedthatthereaderwillhavea"hands-on"involvementwithetchingandopticalmicroscopy,butitisexpectedthatwithX-raytopography,theappropriatespecialistwillperformtheworkandhelpinterprettheresults.

P1828、Itturnsout,however,thattheminoritycarriersarenevertheless,ofgreatimportance,asmanyelectronicprocessesinsemiconductortechnologyarecontrolledbytheminoritycarriers,thedensityofwhich,beingsmall,maybemorereadilyvaried.

P1829、Onetoonecorrelationsbetweendislocationsandemittertocollectorshortsinbipolartransistors,aswellasavalanchesitesinphotodetectorshavebeenmade,whereasprocessinducedstackingfaultsareknowntoreducethestoragetimeinMOSmemorydevices.P1930、Ifdefectcharacterizationisworthyofaphilosophy,thenitmustbe"donotuseoverkill",orinotherwordsusethesimplesttechniq