標準解讀

《GB/T 44514-2024 微機電系統(tǒng)(MEMS)技術(shù) 層狀MEMS材料界面黏附能四點彎曲試驗方法》是一項國家標準,專門針對微機電系統(tǒng)中的層狀材料界面之間的黏附性能進行評估。該標準通過四點彎曲測試來量化不同層間材料的結(jié)合強度,對于理解與優(yōu)化MEMS器件的可靠性和耐用性至關重要。

在具體操作上,本標準詳細規(guī)定了實驗設備的要求、試樣的制備過程以及具體的測試步驟。首先,需要準備符合特定尺寸和形狀要求的層狀MEMS材料樣品。接著,在專用的四點彎曲測試機上按照預定條件對樣品施加力直至其斷裂。通過記錄斷裂時所施加的最大載荷,并結(jié)合材料的幾何參數(shù),可以計算出層間界面的黏附能量值。


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GB/T 44514-2024微機電系統(tǒng)(MEMS)技術(shù)層狀MEMS材料界面黏附能四點彎曲試驗方法_第1頁
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ICS

31.080.99

CCS

L

59

中華人民共和國國家標準

GB/T44514—2024/IEC62047?31:2019

微機電系統(tǒng)(MEMS)技術(shù)

層狀MEMS材料界面黏附能四點彎曲

試驗方法

Micro-electromechanicalsystem(MEMS)technology—Four-pointbendingtest

methodforinterfacialadhesionenergyoflayeredMEMSmaterials

(IEC62047-31:2019,Semiconductordevices—Micro-electromechanical

devices—Part31:Four-pointbendingtestmethodforinterfacialadhesionenergy

oflayeredMEMSmaterials,IDT)

2024-09-29發(fā)布2024-09-29實施

國家市場監(jiān)督管理總局發(fā)布

國家標準化管理委員會

GB/T44514—2024/IEC62047?31:2019

目次

前言

·····································································································

1

范圍

··································································································

1

2

規(guī)范性引用文件

······················································································

1

3

術(shù)語、定義、符號和名稱

············································································

1

3.1

術(shù)語和定義

······················································································

1

3.2

符號和名稱

······················································································

1

4

試驗件

································································································

2

4.1

總體要求

·························································································

2

4.2

試驗件的形狀

····················································································

2

4.3

尺寸測量

·························································································

3

4.4

能量釋放率的評價

···············································································

3

5

試驗方法和試驗裝置

·················································································

3

5.1

試驗原理

·························································································

3

5.2

試驗設備

·························································································

3

5.3

試驗程序

·························································································

3

5.4

試驗環(huán)境

·························································································

4

6

試驗報告

······························································································

4

附錄A(資料性)

四點彎曲試驗中的失效模式

·······················································

6

A.1

總則

·····························································································

6

A.2

失效模式

························································································

6

參考文獻

··································································································

8

GB/T44514—2024/IEC62047?31:2019

前言

本文件按照GB/T1.1—2020《標準化工作導則第1部分:標準化文件的結(jié)構(gòu)和起草規(guī)則》的規(guī)

定起草。

本文件等同采用IEC62047?31:2019《半導體器件微機電器件第31部分:層狀MEMS材料界

面結(jié)合能的四點彎曲試驗方法》。

本文件做了下列最小限度的編輯性改動:

—為與現(xiàn)有標準協(xié)調(diào),將標準名稱改為《微機電系統(tǒng)(MEMS)技術(shù)層狀MEMS材料界面黏附

能四點彎曲試驗方法》;

—為顯示試驗件原始狀態(tài),增加了圖1a)試驗前帶有預制裂紋的試驗件示意圖,同時增加了壓輥

和支承輥的說明。

請注意本文件的某些內(nèi)容可能涉及專利。本文件的發(fā)布機構(gòu)不承擔識別專利的責任。

本文件由全國微機電技術(shù)標準化技術(shù)委員會(SAC/TC336)提出并歸口。

本文件起草單位:北京自動化控制設備研究所、合肥美的電冰箱有限公司、中機生產(chǎn)力促進中心有

限公司、北京晨晶電子有限公司、山東中康國創(chuàng)先進印染技術(shù)研究院有限公司、蘇州大學、西安交通大

學、中國科學院空天信息創(chuàng)新研究院、深圳市速騰聚創(chuàng)科技有限公司、無錫華潤上華科技有限公司、安

徽奧飛聲學科技有限公司、航天長征火箭技術(shù)有限公司、天津新智感知科技有限公司、華東電子工程研

究所(中國電子科技集團公司第三十八研究所)、山東中科思爾科技有限公司、蘇州和林微納科技股份

有限公司、明石創(chuàng)新(煙臺)微納傳感技術(shù)研究院有限公司。

本文件主要起草人:王永勝、曹詩亮、尚克軍、李根梓、劉韌、湯一、毛志平、孫立寧、王志廣、

陳德勇、楊旸、要彥清、張魯宇、魯毓嵐、張新偉、安志武、鄭冬琛、路文一、陳得民、張紅旗、

商艷龍、李帆雅、錢曉晨、高峰。

GB/T44514—2024/IEC62047?31:2019

微機電系統(tǒng)(MEMS)技術(shù)

層狀MEMS材料界面黏附能四點彎曲

試驗方法

1范圍

本文件描述了基于斷裂力學概念的四點彎曲測量方法,利用作用在層狀MEMS材料上的純彎曲力

矩,以最弱界面穩(wěn)態(tài)開裂的臨界彎曲力矩來測量界面黏附能。

本文件適用于在半導體基底上沉積薄膜層的MEMS器件。薄膜層總厚度宜小于支撐基底(通常是硅

晶片)厚度的1/100。

2規(guī)范性引用文件

本文件沒有規(guī)范性引用文件。

3術(shù)語、定義、符號和名稱

3.1術(shù)語和定義

下列術(shù)語和定義適用于本文件。

3.1.1

能量釋放率energyreleaserate

G

在裂紋增長過程中釋放的單位表面積的應變能。

注:能量釋放率被認為是裂紋驅(qū)動力,單位為焦耳每平方米(J/m2)。

3.1.2

界面黏附能interfacialadhesionenergy

Gc

當界面裂紋開始增長并沿界面穩(wěn)定擴展時的能量釋放率。

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