標準解讀
《GB/T 44514-2024 微機電系統(tǒng)(MEMS)技術(shù) 層狀MEMS材料界面黏附能四點彎曲試驗方法》是一項國家標準,專門針對微機電系統(tǒng)中的層狀材料界面之間的黏附性能進行評估。該標準通過四點彎曲測試來量化不同層間材料的結(jié)合強度,對于理解與優(yōu)化MEMS器件的可靠性和耐用性至關重要。
在具體操作上,本標準詳細規(guī)定了實驗設備的要求、試樣的制備過程以及具體的測試步驟。首先,需要準備符合特定尺寸和形狀要求的層狀MEMS材料樣品。接著,在專用的四點彎曲測試機上按照預定條件對樣品施加力直至其斷裂。通過記錄斷裂時所施加的最大載荷,并結(jié)合材料的幾何參數(shù),可以計算出層間界面的黏附能量值。
如需獲取更多詳盡信息,請直接參考下方經(jīng)官方授權(quán)發(fā)布的權(quán)威標準文檔。
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文檔簡介
ICS
31.080.99
CCS
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59
中華人民共和國國家標準
GB/T44514—2024/IEC62047?31:2019
微機電系統(tǒng)(MEMS)技術(shù)
層狀MEMS材料界面黏附能四點彎曲
試驗方法
Micro-electromechanicalsystem(MEMS)technology—Four-pointbendingtest
methodforinterfacialadhesionenergyoflayeredMEMSmaterials
(IEC62047-31:2019,Semiconductordevices—Micro-electromechanical
devices—Part31:Four-pointbendingtestmethodforinterfacialadhesionenergy
oflayeredMEMSmaterials,IDT)
2024-09-29發(fā)布2024-09-29實施
國家市場監(jiān)督管理總局發(fā)布
國家標準化管理委員會
GB/T44514—2024/IEC62047?31:2019
目次
前言
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Ⅲ
1
范圍
··································································································
1
2
規(guī)范性引用文件
······················································································
1
3
術(shù)語、定義、符號和名稱
············································································
1
3.1
術(shù)語和定義
······················································································
1
3.2
符號和名稱
······················································································
1
4
試驗件
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2
4.1
總體要求
·························································································
2
4.2
試驗件的形狀
····················································································
2
4.3
尺寸測量
·························································································
3
4.4
能量釋放率的評價
···············································································
3
5
試驗方法和試驗裝置
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3
5.1
試驗原理
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3
5.2
試驗設備
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3
5.3
試驗程序
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3
5.4
試驗環(huán)境
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4
6
試驗報告
······························································································
4
附錄A(資料性)
四點彎曲試驗中的失效模式
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6
A.1
總則
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6
A.2
失效模式
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6
參考文獻
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8
Ⅰ
GB/T44514—2024/IEC62047?31:2019
前言
本文件按照GB/T1.1—2020《標準化工作導則第1部分:標準化文件的結(jié)構(gòu)和起草規(guī)則》的規(guī)
定起草。
本文件等同采用IEC62047?31:2019《半導體器件微機電器件第31部分:層狀MEMS材料界
面結(jié)合能的四點彎曲試驗方法》。
本文件做了下列最小限度的編輯性改動:
—為與現(xiàn)有標準協(xié)調(diào),將標準名稱改為《微機電系統(tǒng)(MEMS)技術(shù)層狀MEMS材料界面黏附
能四點彎曲試驗方法》;
—為顯示試驗件原始狀態(tài),增加了圖1a)試驗前帶有預制裂紋的試驗件示意圖,同時增加了壓輥
和支承輥的說明。
請注意本文件的某些內(nèi)容可能涉及專利。本文件的發(fā)布機構(gòu)不承擔識別專利的責任。
本文件由全國微機電技術(shù)標準化技術(shù)委員會(SAC/TC336)提出并歸口。
本文件起草單位:北京自動化控制設備研究所、合肥美的電冰箱有限公司、中機生產(chǎn)力促進中心有
限公司、北京晨晶電子有限公司、山東中康國創(chuàng)先進印染技術(shù)研究院有限公司、蘇州大學、西安交通大
學、中國科學院空天信息創(chuàng)新研究院、深圳市速騰聚創(chuàng)科技有限公司、無錫華潤上華科技有限公司、安
徽奧飛聲學科技有限公司、航天長征火箭技術(shù)有限公司、天津新智感知科技有限公司、華東電子工程研
究所(中國電子科技集團公司第三十八研究所)、山東中科思爾科技有限公司、蘇州和林微納科技股份
有限公司、明石創(chuàng)新(煙臺)微納傳感技術(shù)研究院有限公司。
本文件主要起草人:王永勝、曹詩亮、尚克軍、李根梓、劉韌、湯一、毛志平、孫立寧、王志廣、
陳德勇、楊旸、要彥清、張魯宇、魯毓嵐、張新偉、安志武、鄭冬琛、路文一、陳得民、張紅旗、
商艷龍、李帆雅、錢曉晨、高峰。
Ⅲ
GB/T44514—2024/IEC62047?31:2019
微機電系統(tǒng)(MEMS)技術(shù)
層狀MEMS材料界面黏附能四點彎曲
試驗方法
1范圍
本文件描述了基于斷裂力學概念的四點彎曲測量方法,利用作用在層狀MEMS材料上的純彎曲力
矩,以最弱界面穩(wěn)態(tài)開裂的臨界彎曲力矩來測量界面黏附能。
本文件適用于在半導體基底上沉積薄膜層的MEMS器件。薄膜層總厚度宜小于支撐基底(通常是硅
晶片)厚度的1/100。
2規(guī)范性引用文件
本文件沒有規(guī)范性引用文件。
3術(shù)語、定義、符號和名稱
3.1術(shù)語和定義
下列術(shù)語和定義適用于本文件。
3.1.1
能量釋放率energyreleaserate
G
在裂紋增長過程中釋放的單位表面積的應變能。
注:能量釋放率被認為是裂紋驅(qū)動力,單位為焦耳每平方米(J/m2)。
3.1.2
界面黏附能interfacialadhesionenergy
Gc
當界面裂紋開始增長并沿界面穩(wěn)定擴展時的能量釋放率。
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