光伏行業(yè)常用術(shù)語(yǔ).doc

精品文檔Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶錠 - 由多晶或單晶形成的圓柱體，晶圓片由此切割而成。 Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer. 激光散射 - 由晶圓片表面缺陷引起的脈沖信號(hào)。 Lay - The main direction of surface texture on a wafer. 層 - 晶圓片表面結(jié)構(gòu)的主要方向。 Light Point Defect (LPD) (Not preferred; see localized light-scatterer) 光點(diǎn)缺陷(LPD) （不推薦使用，參見(jiàn)“局部光散射”） Lithography - The process used to transfer patterns onto wafers. 光刻 - 從掩膜到圓片轉(zhuǎn)移的過(guò)程。 Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect. 局部光散射 - 晶圓片表面特征，例如小坑或擦傷導(dǎo)致光線(xiàn)散射，也稱(chēng)為光點(diǎn)缺陷。 Lot - Wafers of similar sizes and characteristics placed together in a shipment. 批次 - 具有相似尺寸和特性的晶圓片一并放置在一個(gè)載片器內(nèi)。 Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area. 多數(shù)載流子 - 一種載流子，在半導(dǎo)體材料中起支配作用的空穴或電子，例如在N型中是電子。 Mechanical Test Wafer - A silicon wafer used for testing purposes. 機(jī)械測(cè)試晶圓片 - 用于測(cè)試的晶圓片。 Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 m. 微粗糙 - 小于100微米的表面粗糙部分。 Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal. Miller索指數(shù) - 三個(gè)整數(shù)，用于確定某個(gè)并行面。這些整數(shù)是來(lái)自相同系統(tǒng)的基本向量。 Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable. 最小條件或方向 - 確定晶圓片是否合格的允許條件。Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area. 少數(shù)載流子 - 在半導(dǎo)體材料中不起支配作用的移動(dòng)電荷，在P型中是電子，在N型中是空穴。 Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm. 堆垛 - 晶圓片表面超過(guò)0.25毫米的缺陷。 Notch - An indent on the edge of a wafer used for orientation purposes. 凹槽 - 晶圓片邊緣上用于晶向定位的小凹槽。 Orange Peel - A roughened surface that is visible to the unaided eye. 桔皮 - 可以用肉眼看到的粗糙表面 Orthogonal Misorientation - 直角定向誤差 - Particle - A small piece of material found on a wafer that is not connected with it. 顆粒 - 晶圓片上的細(xì)小物質(zhì)。 Particle Counting - Wafers that are used to test tools for particle contamination. 顆粒計(jì)算 - 用來(lái)測(cè)試晶圓片顆粒污染的測(cè)試工具。 Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer. 顆粒污染 - 晶圓片表面的顆粒。 Pit - A non-removable imperfection found on the surface of a wafer. 深坑 - 一種晶圓片表面無(wú)法消除的缺陷。 Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom. 點(diǎn)缺陷 - 不純凈的晶缺陷，例如格子空缺或原子空隙。 Preferential Etch - 優(yōu)先蝕刻 - Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer. 測(cè)試晶圓片 - 影印過(guò)程中用于顆粒計(jì)算、測(cè)量溶解度和檢測(cè)金屬污染的晶圓片。對(duì)于具體應(yīng)用該晶圓片有嚴(yán)格的要求，但是要比主晶圓片要求寬松些。 Primary Orientation Flat - The longest flat found on the wafer. 主定位邊 - 晶圓片上最長(zhǎng)的定位邊。 Process Test Wafer - A wafer that can be used for processes as well as area cleanliness. 加工測(cè)試晶圓片 - 用于區(qū)域清潔過(guò)程中的晶圓片。 Profilometer - A tool that is used for measuring surface topography. 表面形貌劑 - 一種用來(lái)測(cè)量晶圓片表面形貌的工具。 Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material. 電阻率（電學(xué)方面） - 材料反抗或?qū)闺姾稍谄渲型ㄟ^(guò)的一種物理特性。 Required - The minimum specifications needed by the customer when ordering wafers. 必需 - 訂購(gòu)晶圓片時(shí)客戶(hù)必須達(dá)到的最小規(guī)格。Roughness - The texture found on the surface of the wafer that is spaced very closely together. 粗糙度 - 晶圓片表面間隙很小的紋理。 Saw Marks - Surface irregularities 鋸痕 - 表面不規(guī)則。 Scan Direction - In the flatness calculation, the direction of the subsites. 掃描方向 - 平整度測(cè)量中，局部平面的方向。 Scanner Site Flatness - 局部平整度掃描儀 - Scratch - A mark that is found on the wafer surface. 擦傷 - 晶圓片表面的痕跡。 Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer. 第二定位邊 - 比主定位邊小的定位邊，它的位置決定了晶圓片的類(lèi)型和晶向。 Shape - 形狀 - Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape) 局部表面 - 晶圓片前面上平行或垂直于主定位邊方向的區(qū)域。 Site Array - a neighboring set of sites 局部表面系列 - 一系列的相關(guān)局部表面。 Site Flatness - 局部平整 - Slip - A defect pattern of small ridges found on the surface of the wafer. 劃傷 - 晶圓片表面上的小皺造成的缺陷。 Smudge - A defect or contamination found on the wafer caused by fingerprints. 污跡 - 晶圓片上指紋造成的缺陷或污染。 Sori - Striation - Defects or contaminations found in the shape of a helix. 條痕 - 螺紋上的缺陷或污染。 Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site. 局部子表面 - 局部表面內(nèi)的區(qū)域，也是矩形的。子站中心必須位于原始站點(diǎn)內(nèi)部。 Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface. 表面紋理 - 晶圓片實(shí)際面與參考面的差異情況。 Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes. 測(cè)試晶圓片 - 用于生產(chǎn)中監(jiān)測(cè)和測(cè)試的晶圓片。 Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer. 頂部硅膜厚度 - 頂部硅層表面和氧化層表面間的距離。 Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer. 頂部硅膜 - 生產(chǎn)半導(dǎo)體電路的硅層，位于絕緣層頂部。 Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer. 總計(jì)指示劑數(shù)(TIR) - 晶圓片表面位面間的最短距離。 Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes. 原始測(cè)試晶圓片 - 還沒(méi)有用于生產(chǎn)或其他流程中的晶圓片。 Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding. 無(wú)效 - 在應(yīng)該綁定的地方?jīng)]有綁定（特別是化學(xué)綁定）。 Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye. 波浪 - 晶圓片表面通過(guò)肉眼能發(fā)現(xiàn)的彎曲和曲線(xiàn)。 Waviness - Widely spaced imperfections on the surface of a wafer. 波紋 - 晶圓片表面經(jīng)常出現(xiàn)的缺陷。Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor. 受主 - 一種用來(lái)在半導(dǎo)體中形成空穴的元素，比如硼、銦和鎵。受主原子必須比半導(dǎo)體元素少一價(jià)電子 Alignment Precision - Displacement of patterns that occurs during the photolithography process. 套準(zhǔn)精度 - 在光刻工藝中轉(zhuǎn)移圖形的精度。 Anisotropic - A process of etching that has very little or no undercutting 各向異性 - 在蝕刻過(guò)程中，只做少量或不做側(cè)向凹刻。 Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc. 沾污區(qū)域 - 任何在晶圓片表面的外來(lái)粒子或物質(zhì)。由沾污、手印和水滴產(chǎn)生的污染。 Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse. 橢圓方位角 - 測(cè)量入射面和主晶軸之間的角度。 Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use back surface.) 背面 - 晶圓片的底部表面。（注：不推薦該術(shù)語(yǔ)，建議使用背部表面） Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅層 - 在絕緣層下部的晶圓片，是頂部硅層的基礎(chǔ)。 Bipolar - Transistors that are able to use both holes and electrons as charge carriers. 雙極晶體管 - 能夠采用空穴和電子傳導(dǎo)電荷的晶體管。 Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer. 綁定晶圓片 - 兩個(gè)晶圓片通過(guò)二氧化硅層結(jié)合到一起，作為絕緣層。 Bonding Interface - The area where the bonding of two wafers occurs. 綁定面 - 兩個(gè)晶圓片結(jié)合的接觸區(qū)。 Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic. 埋層 - 為了電路電流流動(dòng)而形成的低電阻路徑，攙雜劑是銻和砷。 Buried Oxide Layer (BOX) - The layer that insulates between the two wafers. 氧化埋層(BOX) - 在兩個(gè)晶圓片間的絕緣層。 Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer. 載流子 - 晶圓片中用來(lái)傳導(dǎo)電流的空穴或電子。 Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process. 化學(xué)-機(jī)械拋光(CMP) - 平整和拋光晶圓片的工藝，采用化學(xué)移除和機(jī)械拋光兩種方式。此工藝在前道工藝中使用。Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand. 卡盤(pán)痕跡 - 在晶圓片任意表面發(fā)現(xiàn)的由機(jī)械手、卡盤(pán)或托盤(pán)造成的痕跡。 Cleavage Plane - A fracture plane that is preferred. 解理面 - 破裂面 Crack - A mark found on a wafer that is greater than 0.25 mm in length. 裂紋 - 長(zhǎng)度大于0.25毫米的晶圓片表面微痕。 Crater - Visible under diffused illumin