BSN20PDF規(guī)格書(shū)

1、 featurestrenchmos? technologyvery fast switchinglogic level compatiblesubminiature surface mount package. absolute maximum ratings ta = 25symbolratingunitvds50vgs20173110idm700power dissipationta = 25pd0.83wrthja350rthjp150tj, tstg5+150voperating and storage junction temperature rangethermal resist

2、ance from junction to solder pointk/w ta = 100idmaparametercontinuous drain current ta = 25maximum junction-to-ambientdrain-source voltagegate-source voltagepulsed drain currentdgs- 6bsn200.4+0.1-0.12.9+0.1-0.10.95+0.1-0.11.9+0.1-0.12.4+0.1-0.11.3+0.1-0.10-0.10.38+0.1-0.10.97+0.1-0.10.550.41.gate2.s

3、ource3.drain123unit:mmsot-230.1+0.05-0.01 fen-channel mosfet electrical characteristics ta = 25parametersymboltestconditonsmintypmaxunitdrain-source breakdown voltagev(br)dssvgs=0 v, id=10 a50gate-threshold voltagevgs(th)vds=vgs, id=1 ma0.4gate-body leakagelgssvds=0 v, vgs= 20 v100navds=40 v, vgs=0

4、v1vds=40 v, vgs=0 v, ta = 15010vgs=10 v, id=100 ma2.815vgs=5 v, id=100 ma3.820forward tran conductancegfsvds=10 v, id=100 ma40170msinput capacitanceciss1725output capacitancecoss715reverse transfer capacitancecrss48turn-on timetd(0n)1.78turn-off timetd(off)815reverse recovery timetrr30recovered char

5、geqrr30ncdiode forward voltagevsdis=180 ma, vgs=0 v0.91.5vis=180ma;di/dt=100a/s;vgs=0v;vds=25vnsua?pfdrain-source on-resistanceidssrds(0n)vdd=20 v, rd=1 80rgs=5 0 ? ,vgs=10 vrg=50vds=10 v, vgs=0 v, f=1 mhzvzero gate voltage drain currentmarkingmarking702. fe1.52bsn20n-channel mosfettypical character

6、isticsvgs 5 vfig 1.normalized total power dissipation as afunction of solder point temperature.fig 2.normalized continuous drain current as afunction of solder point temperature.tsp= 25 c; idm is single pulse.fig 3. safe operating area; continuous and peak drain currents as a function of drain-sourc

7、e voltage.0204060801001200255075100125150175pdertsp (oc)(%)0204060801001200255075100125150175ider (%)tsp (oc)pderptotptot 25 c-100%=ideridid 25 c-100%=10-210-11010112vds (v)id(a)d.c.100 ms10 msrdson = vds/ id1 mstp = 10 s100 stsp = 25octptptptt =mounted on a metal clad substrate.fig 4.transient ther

8、mal impedance from junction to solder point as a function ofpulse duration.03aa47zth(j-sp)(k/w)tptptptt =（）（）bsn20n-channel mosfettj= 25 tcj= 25 c and 150 c; vdsidrdsonfig 5.output characteristics: drain current as afunctionof drain-sourcevoltage;typicalvalues.fig 6.transfer characteristics: drain c

9、urrent as afunction of gate-source voltage; typical values.tj= 25 cfig 7.drain-source on-state resistance as a functionof drain current; typical values.fig 8.normalized drain-source on-state resistancefactor as a function of junction temperature.id(a)00.10.20.30.40.50.60.70.8012345678910vgs (v)id(a)

10、vds id x rdsontj = 25oc150oc01234567891000.10.20.30.40.50.60.7id (a)rdson(? )vgs = 10vtj = 25oc4.5 v4 v3.5v00.20.40.60.811.21.41.61.822.2-60-202060100140180tj (oc)aardsonrdson25 c- - - -=id= 1 ma; vds= vgstj= 25 c; vds= 5 vfig 9.gate-source threshold voltage as a function ofjunction temperature.fig

11、10.sub-threshold drain current as a function ofgate-source voltage.00.20.40.60.811.21.41.61.82-60-202060100140180tj (oc)vgs(th)(v)typmin00.20.40.60.811.21.41.61.82vgs (v)id(a)typmin10-610-510-410-310-210-1 typical characterisitics（）bsn20n-channel mosfettj= 25 c and 150 c; vdsidrdsonvgs= 0 v; f = 1 mhzfig 11.forward transconductance as a function ofdrain current; typical values.fig 12.input,outputand reversetransfercapacitancesas a function of drain-source voltage; typicalvalues.gfs(s)11010210-1110102vds (v)ciss, coss, crss(pf)cisscosscrss