低能帶電粒子核反應(yīng)中電子屏蔽效應(yīng)的溫度相關(guān)性

1、29 122005 12 HIGHENERGYPHYSICSANDNUCLEARPHYSICSVol.29,No.12Dec.,2005*1;1)F.Raiola2B.Burchard2C.Rolfs )2 11( 2(Ruhr-Universit¨at102413)D-44780, 100kV T=200 d(d,p)t . ( ) , , , . . , Co Pt d(d,p)t , . .31.29Z1Z2(µ/E)1/2 .Z1 Z2 ;µ E ( ) ( keV );S(E),;E1;Gamow exp(2), .,( ),. ,1. ., , s(E

2、)(1) b(E).E Ee=E+Ue,85 . . , 241, . . , 57. , (E) . , . , (E) S(E) , (E)=S(E)E1exp(2), , 2=2Z1Z2e2/ =1132 (HEP&NP) 29nae2 1/2,(3)0 ,n,a . ,Ue=1RDebye,(4)T=293K,ne=1(ne) a=6×1022/cm3 (3) (4) ,Ue=300eV, ., Uene,. , .(3) (4), .,. ,.,d(d,p)t .,12 1133N,(5)Np ,N .4 ,K(Ed,) d(d,p)tW(Ed,)13, , , R

3、Y(Ed,)=K(Ed,)W(Ed,)(Ed)dx=0 0dxK(Ed,)W(Ed,)(Ed)Ed1134 (HEP&NP) 29 MaterialT/Ue/eVasolubilityybnaene(Hall)cinsulatorC200<500.15:a ;b 20%;c ( 20% ),. , 1. , 200 , . Ue (3) (4) ne, ne(Hall) . , T=200 C d(d,p)t . C , 200 20 0.35 0.15, ( 1). Co Pt . 1 , , . 4 20 300 Pt . 5 20340 Pt , . ne , ne . U

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7、onalRela-tionshipsinScienceandTechnology.Berlin:Verlag,1959.166Springer-TemperatureDependenceofElectronScreeningatLowEnergy*ZENGSheng1;1)F.Raiola2B.Burchard2C.Rolfs2LIANGang11(ChinaInstituteofAtomicEnergy,Beijing102413,China)2(Ruhr-Universit¨at,BochumD-44780,Germany)AbstractForadeepunderstandin

8、goftheelectronscreeningeects,wecooperatedwiththeastrophysicsgroupofRuhrUniversitytostudytheelectronscreeninginthed(d,p)treactionforthedeuteratedmetalsofgroups3and4oftheperiodictableandthelanthanides,atasampletemperatureT=200,usingtheD+3beamsprovidedbythe100kVacceleratorofDynamitron-Tandem-Laboratori

9、um.Thehydrogensolubilityinthesamplesdroppedtoalevelofafewpercent(comparedtoT=20)andalargescreeningbecameobservable.WiththeclassicalplasmamodelofDebyeappliedtothequasi-freemetallicelectrons,thededucednumberofvalenceelectronspermetallicatomagreeswiththecorrespondingnumberfromtheHallcoecient,forallmetalsinvestigated.Finally,wemeasuredthescreeningforthemetalsCoandPtasafunctionofsampletemperature,inpartbetweenT=20and340.Thedataagree