IRF540中文大數(shù)據(jù)手冊(cè)簿要點(diǎn)

實(shí)用標(biāo)準(zhǔn)文案IRF540N溝道MOS管SYMBOLQSYMBOLQUICKREFERENCEDATAVDS￡=100VL=23A^D5；oN：477mil'Thrench'工藝低的導(dǎo)通內(nèi)阻快速開關(guān)低熱敏電阻綜述使用溝渠工藝封裝的 N通道增強(qiáng)型場(chǎng)效應(yīng)功率晶體管應(yīng)用：DC到DC轉(zhuǎn)換器開關(guān)電源電視及電腦顯示器電源IRF540中提供的是SOT78(TO220AB)常規(guī)鉛的包裹.IRF540S中提供的是SOT404(DPAK)外表安裝的包裹.管腳管腳描述1Gate2Drain3SourceTabDrainSOT404(DJPAK)tab極限值系統(tǒng)絕對(duì)最大值依照限制值符號(hào)參數(shù)條件最小值最大值單位V_DSS漏源極電壓Tj=25?Cto175?C-100VV_DGR漏門極電壓Tj=25?Cto175?C;-100V文檔大全

實(shí)用標(biāo)準(zhǔn)文案V_GS門源極電壓RGS=20k?一士20VI_D連續(xù)漏電流一23ATmb=25?C;VGS=10V一16AI_DM脈沖漏電流Tmb=100?C;VGS=10V一92AP_D總功耗Tmb=25?C一100WTj,Tsig操作點(diǎn)和Tmb=25?C-55175C存儲(chǔ)溫度雪崩能量極限值符號(hào)參數(shù)條件最小值最大值單位EAS1AS非重復(fù)性雪崩能量最大非重復(fù)性雪崩電流Unclampedinductiveload,IAS=10A;tp=350s;Tjpriortoavalanche=25?C;VDD<25V;RGS=50?;VGS=10V;refertofig:14--23023mJA熱敏電阻符號(hào)參數(shù)條件最小值典型值最大值單位Rhj.安裝底座交界處的熱阻--1.5K/WR〞周圍環(huán)境熱阻SOT78封裝,自由空間SOT404封裝,PCB上--6050--K/WK/W電特性25C除非另有說明符號(hào)參數(shù)條件最小值典型值最大值單位V(BR)DSS漏源極崩潰電壓VGS=0V;ID=0.25mA100--VTj=-55?C89--VVGS(TO)門閥電壓Vds=Vgs;ID=1mA234VTj=175?C1--VTj=-55?C--6VRDS(ON)漏源極導(dǎo)通電阻VGS=10V;ID=17A-4977mQTj=175?C132193mQ文檔大全

實(shí)用標(biāo)準(zhǔn)文案gfs向前跨導(dǎo)Vds=25V;Id=17A8.715.5一SIGSS門源極泄漏電流Vgs=i20V；Vds=0V一10100nA?DSS0門極電壓漏電流vds=100v；vgs=0vVDS=80V;VGS=0V;Tj=175?C一一0.05一10250uAuAQg(tot)總共門極電荷ID=17A一一65nCQgs門源極電荷VDD=80V;一一10nCQgd門漏極電荷VGS=10V一一29nCTdon開啟延遲時(shí)間Vdd=50V;Rd=2.2?;一8一ns開啟上沿時(shí)間Vdd=10V;Rg=5.6?一39一nsTdoff關(guān)閉延遲時(shí)間Resistiveload一26一nsTf關(guān)閉卜沿時(shí)間一24一nsLd內(nèi)部漏電〕感Measuredtabtocentreofdie一3.5一nHLd內(nèi)部漏電〕感Measuredfromdrainleadtocentre一4.5一nHofdie(SOT78packageonly)Ls內(nèi)部源極電感Measuredfromsourceleadtosource一7.5一nHbondpadCiSS輸入電容Vgs=0V;Vds=25V;f=1MHz一8901187pFCoSS輸出電容一139167pFCrSS反應(yīng)電容一83109pF反向二極管極限值及特性符號(hào)條件最小符號(hào)條件最小值典型值最大值單位文檔大全實(shí)用標(biāo)準(zhǔn)文案IS連續(xù)源極電流IF=28A;--23AISM脈沖源極電流Vgs=0V--92AVDS二極管正向電壓-0.941.5Vtrr反向恢復(fù)之間If=17A;Vgs=0V;-61-nsQrr反向恢復(fù)命令-dIF/dt=100A/us;Vr=25V-200-nC文檔大全

實(shí)用標(biāo)準(zhǔn)文案圖1:自然功率損耗Fig2Normalisedcontinuousdraincurrent.ID%=a.//.？七=f〔丁小〕；cond田ons: N10V底座溫度-漏電流降低百分比圖2:自然持續(xù)漏電流文檔大全實(shí)用標(biāo)準(zhǔn)文案Fig.3.Safeoperatingarea.Tmb=25CC卜&二f(V°s)；Idmsing?pulse;parameter漏源極電壓-脈沖漏極電流峰值圖3:平安操作區(qū)域Fig.4.Transientthermalimpedance,乙打句8二f(t)；parameterD=t"脈寬-瞬態(tài)熱阻抗圖4:瞬態(tài)熱阻抗文檔大全實(shí)用標(biāo)準(zhǔn)文案Drain-SourceVoltagerVDS(V)Fig.5.Typicaloutputcharacteristics,7}=25Cb=f(Vos)漏源極電壓-漏極電流圖5:典型輸出特性Drain-SourceOnResistance,RDS(on)(Ohms)Fig.6.Typicalon-stateresistance,刀=25cRqsgw二他漏極電流-圖6:典型導(dǎo)通阻抗文檔大全

實(shí)用標(biāo)準(zhǔn)文案Fig.7.實(shí)用標(biāo)準(zhǔn)文案Fig.7.Typicaltransfercharacteristics.Id=f(VGS)00642086420864203222221111120181614121086VDSVDS>IDXRDS(ON)T1=25C二/175(/ ..,II-1//ITransconductance,9fs(S)00 24 6 81012141618202224262830Draincurrent,ID(A)Fig,8.Typicaltransconductance,7}=25C

%二f㈤圖8:典型跨導(dǎo)文檔大全實(shí)用標(biāo)準(zhǔn)文案文檔大全Fig.9.Normaliseddrain-sourceon-stateresistance.^DS(On/f^DS(ON)25'C=RTj)圖9:漏源極導(dǎo)通阻抗JunctionTemperature,Tj(C)Fig.10.Gatethresholdvoltage.Vgs{ts=f(T)；conditions:Io=1mA;4s=圖10：門閥電壓實(shí)用標(biāo)準(zhǔn)文案文檔大全Fig.11.Sub-thresholddraincurrentlD=fC-conditions:7)=25cVDS=\/GS圖ii：閾漏極電流Fig.12.Typicalcapacitances,CIS5iC05SfCrssC=f(VDS);conditions:VGS=0V;f=1MHz圖12:典型電容值實(shí)用標(biāo)準(zhǔn)文案Source-DSource-DrainDiodeCurrentIF(A)00.10.20.30.40.50,60,70.80.911.11.21.31,41.5Source-DrainVoltage,VSOS(V)Fig.13.Typicalreversediodecurrent,lF=f(VSDS);conditions:VGS=0Y;parameterT：08642086420CM.11-Avalanchetime,(ms)Fig.14.M