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PART1ElectricalandElectronicEngineeringBasicsSection4PowerSemiconductorDevicesNewWordsandExpressions

LanguagepointsComplementNewWordsandExpressionsconvertern.轉(zhuǎn)換器，換流器，變流器matrixn.模型，矩陣dioden.二極管，半導(dǎo)體二極管thyristorn.晶閘管triacn.三端雙向晶閘管GTO門極可關(guān)斷晶閘管BJT雙極結(jié)型晶體管powerMOSFET電力MOS場(chǎng)效應(yīng)晶體管SIT靜態(tài)感應(yīng)晶體管NewWordsandExpressionsIGBT絕緣柵雙極型晶體管MCTMOS控制晶閘管IGCT集成門極換向晶閘管rectificationn.整流feedbackn.反饋freewheelingn.單向傳動(dòng)snubbern.緩沖器，減震器intrinsicadj.固有的，體內(nèi)的，本征NewWordsandExpressionsforwardbiased正向偏置conductionn.

導(dǎo)電,傳導(dǎo)reversebiased反向偏置leakagecurrent漏電流thresholdn.門限，閾限，極限breakdownn.擊穿，雪崩recoveryn.恢復(fù)schottkydiode肖基特二極管NewWordsandExpressionsworkhorsen.重載，重負(fù)荷thyratronn.閘流管breakovern.導(dǎo)通latchingcurrent閉鎖電流holdingcurrent保持電流phasecontrolled相控的asymmetricadj.不對(duì)稱的forcecommutated強(qiáng)制換向NewWordsandExpressionsSMPS開(kāi)關(guān)電源BLDM無(wú)刷直流電動(dòng)機(jī)steppermotor步進(jìn)電動(dòng)機(jī)hybridn.混合emittern.發(fā)射極saturationn.飽和

LanguagePoints[1]Powersemiconductordevicescons-titutetheheartofmodernpowerelectronicapparatus.Theyareusedinpowerelec-tronicconversionintheformofamatrixofon-offswitches.Andtheswitchingmodepowerconversiongiveshighefficiency.LanguagePoints[2]Powerdiodesprovideuncontrolledrec-tificationofpowerandareusedinappli-cationssuchaselectroplating,ano-dizing,batterycharging,welding,powersupplies(DCandAC),andvariable-frequencydrives.LanguagePoints[3]Theyarealsousedinfeedbackandthefreewheelingfunctionsofconvertersandsnubbers.AtypicalpowerdiodehasP-I-Nstructure,thatis,itisaP-Njunctionwithanearintrinsicsemiconductorlayer(I-layer)inthemiddletosustainreversevoltage.LanguagePoints[4]Ifthereversevoltageexceedsathre-sholdvalue,calledthebreakdownvoltage,thedevicegoesthroughavalanchebreak-down,whichiswhenreversecurrentbecomeslargeandthediodeisdestroyedbyheatingduetolargepowerdissipationinthejunction.LanguagePoints[5]Thyristors,orsilicon-controlledrectifiers(SCRs)havebeenthetraditionalworkhorsesforbulkpowerconversionandcontrolinindustry.Themoderneraofsolid-statepowerelectronicsstartedduetotheintroductionofthisdeviceinthelate1950s.LanguagePoints[6]Often,itisafamilynamethatincludesSCR,TRIAC,GTO,MCT,andIGCT.Thy-ristorscanbeclassifiedasstandard,orslowphase-control-typeandfast-switching,voltage-fedinverter-type.Theinverter-typehasrecentlybecomeobsolete.LanguagePoints[7]Basically,thyristorisathree-junctionP-N-P-Ndevice,whereP-N-PandN-P-Ncomponenttransistorsareconnectedinregenerativefeedbackmode.Thedeviceblocksvoltageinboththeforwardandreversedirection(symmetricblocking).LanguagePoints[8]Atriacshasacomplexmultiple-junctionstructure,butfunctionally,itisanintegrationofapairofphase-controlledthyristorsconnectedininverse-parallelonthesamechip.LanguagePoints[9]Awell-designedRCsnubberisessen-tialforatriaccircuit.Triacsareusedinlightdimming,heatingcontrol,alliance-typemotordrives,andsolid-staterelayswithtypically50/60Hzsupplyfrequency.LanguagePoints[10]Agateturn-offthyristor(GTO),asthenameindicates,isbasicallyathyristor-typedevicethatcanbeturnedonbyasmallpositivegatecurrentpulse,butinaddition，hasthecapabilityofbeingturnedoffbyanegativegatecurrentpulse．LanguagePoints[11]GTOsareavailablewithasymmetricandsymmetricvoltage-blockingcapabilities,whichareusedinvoltage-fedandcurrent-fedconverters,respectively．[12]GTOsareusedinmotordrives,staticVARcompensators(SVCs),andAC/DCpowersupplieswithhighpowerratings.Whenlarge-powerGTOsbecameavailable,theyoustedtheforce-commutated,voltage-fedthyristorinverters.LanguagePoints[13]Unlikethedevicesdiscussedsofar,apowerMOSFET(metal-oxidesemi-conductorfield-effecttransistor)isaunipolar,majoritycarrier,“zerojunction”,voltage-controlleddevice．[14]MOSFETsareextremelypopularinlow-voltage,low-power,andhigh-frequen-cyswitchingapplications,includeswitchingmodepowersupplies,brushlessDCmo-tors,steppermotordrives,andsolid-stateDCrelays.LanguagePoints[15]Theintroductionofinsulatedgatebipolartransistorsinthemid-1980swasanimportantmilestoneinthehistoryofpowersemiconductordevices．TheyareextremelypopulardevicesinpowerelectronicsuptomediumpowerrangeandareappliedextensivelyinDC/ACdrivesandpowersupplysystems.TheyoustedBJTsintheupperrange,andarecurrentlyoustingGTOsinthelowerpowerrange.LanguagePoints[16]AnIGBTisbasicallyahybridMOS-gatedturn-on/offbipolartransistorthatcombinestheadvantagesofbothaMOSFETandBJT.ItsarchitectureisessentiallysimilartothatofaMOSFET,exceptanadditionalP+layerhasbeenaddedatthecollectorovertheN+drainlayeroftheMOSFET.LanguagePoints[17]AnMOS-controlledthyristor,asthenameindicates,isathyristor-like,trigger-into-conductionhybriddevicethatcanbeturnedonoroffbyashortvoltagepulseontheMOSgate.Thedevicehasamicrocellconstruction,wherethousandsofmicrodevicesareconnectedinparallelonthesamechip.Thecellstructureissomewhatcomplex.LanguagePoints[18]TheMCTwascommerciallyintroducedin1992,andcurrently,medium-powerdevicesareavailablecommercially.Thefutureacceptanceofthedeviceremainsuncertainatthispoint.[19]Basically,itisahigh-voltage,high-power,hard-driven,asymmetric-blockingGTOwithunityturn-offcurrentgain.LanguagePoints[20]Suchagatecurrentpulseofveryshortdurationandverylarge

di/dthassmallenergycontentandcanbesuppliedbymultipleMOSFETsinparallelwithultra-lowleakageinductanceinthedrivecircuit.[21]IGCThasbeenappliedinpowersystemintertieinstallationsandmedium-powerindustrialdrives.ExercisesI.TranslatethefollowingintoChinese

Allthesimplecircuitelementsthatwillbeconsideredintheworkthatfollowscanbeclassifiedaccordingtotherelationshipofthecurrentthroughtheelementtothevoltageacrosstheelement.Forinstance,ifthevoltageacrosstheelementisdirectlyproportionaltothecurrentthroughit,oru=

ki,weshallcalltheelementaresistor.Othertypesofsimplecircuitelementshaveaterminalvoltagewhichisproportionaltothetimederivativeortheintegralwithrespecttotimeofthecurrent.ThereExercisesI.TranslatethefollowingintoChinese

arealsoelementsinwhichthevoltageiscompletelyindependentofthecurrentorthecurrentiscompletelyindependentofthevoltage;thesearetheindependentsources.Furthermore,weshallneedtodefinespecialkindsofsourcesinwhichthesourcevoltageorcurrentdependsuponacurrentorvoltageelsewhereinthecircuit;suchsourceswillbetermeddependentsourcesorcontrolledsources.VocabularyCharacteristicI一、前綴(prefixes)1.anti-/counter-

反，抗，防，逆，耐

antivirus

防病毒；

anti-interference抗干擾；anti-phase

反相；

counterclockwise逆時(shí)針?lè)较虻模ǖ兀籧ountercurrent反向電流。2.

auto-

自動(dòng)、自

autotransformer

自耦變壓器；

autocoder

自動(dòng)編碼器；

automodulation

自調(diào)制；

automobile自動(dòng)車。VocabularyCharacteristicI3.bi-

雙，重

bipolarrelay

雙極繼電器；

bilateral兩邊的，雙邊的；

雙金屬。4.co-

共，同，一起，相互

coaxialcable

同軸電纜；

cosine

余弦。5.de-

表示相反動(dòng)作

demodulator解調(diào)器；

deform

變形。6.deci-

表示十分之一，分

decimal十進(jìn)制；decibel分貝;decimeter分米

VocabularyCharacteristicI7.di-雙，偶，兩

diode

二極管；

dipole

偶極子；

dioxide

二氧化物。8.dis-

表示相對(duì)單詞的反義詞

displace

位移；

disconnect解開(kāi)，斷開(kāi)。9.equi-同等，均

equipartition

均分；

equilibrium均衡，平衡。10.hydro-

水，氫化

hydrodynamic

水力的，水壓的，流體動(dòng)力學(xué)的；

hydroelectric水力發(fā)電的。11.

hyper-

高，超，重，極度

VocabularyCharacteristicI12.in-

表示否定

inaccurate不精確的；invariable不變的。13.inter-

相互，際間

internet互聯(lián)網(wǎng)；interchange

互換；

interface

界面；intercitytrain

城際列車。14.mal-不，失

malfunction失靈，故障；malformation畸形；

maltreat濫用，亂用。15.mega-兆，百萬(wàn)

megawatt兆瓦；megaton百萬(wàn)噸級(jí)。VocabularyCharacteristicI16.micro-微觀，微型，百萬(wàn)分之一

microelectronics

微電子學(xué)；

microcomputer微型計(jì)算機(jī)；

microfilm

微縮膠卷；micrometer微米；

microwave微波。17.mini-

小

minicomputer小型計(jì)算機(jī)；

minibus微型公共汽車。18.multi-多

multi-frequency多頻率。19.over-過(guò)，超，太

overfrequency

超頻；overcharge

過(guò)度充電。VocabularyCharacteristicI20.photo-光，光電，光敏

photocell光電池；photohead

光電傳感頭；

photoreceptor感光器。21.post-后

postfault

故障后。22.pre-

在前，預(yù)先

preheat

預(yù)熱；precondition

前提，先決條件。23.semi-

半

semiconductor

半導(dǎo)體。24.sub-

子，亞，低，次，副

subsystem子系統(tǒng)，分系統(tǒng)；substation變電站

subcode

子碼。VocabularyCharacteristicI25.tele-遠(yuǎn)，電

telemetry遙測(cè)術(shù)；telecommunication

電信；

teleswitch

遙控開(kāi)關(guān)；telecontrol

遙控。26.thermo-

熱

thermostat

恒溫器；thermoelectric熱電的；

thermo-fuse

熱熔絲。27.tri-

三

triangle

三角形。

28.ultra-

超，過(guò)

ultra-high-frequency超高頻；ultrasonic超聲波29.un-表示相反的意思

unequal不等；unvarying不變的。VocabularyCharacteristicII一、后綴(suffixes)1.–able

形容詞的詞尾，表示“……的”

stable

穩(wěn)定的；reliable

可靠的；

comparable可比較的。2.–al

形容詞詞尾，表示“……的”

digital

數(shù)字的；functional

功能的，函數(shù)的。3.-ance/-ence

名詞詞尾

capacitance電容；resistance電阻；

reactance

電抗；existence

存在。4.–ary

形容詞詞尾，表示“……”

elementary

初步的；momentary

瞬息的。VocabularyCharacteristicII5.–en

一般是形容詞+en構(gòu)成，表示“使……”

soften軟化；

harden

使……變硬。6.-er/-or

表示“機(jī)器、設(shè)備、物件等”

air-oilbooster

氣-液增壓器；

aircompressor

空氣壓縮機(jī)。7.–free

形容詞詞尾，表示“無(wú)……的”，“免于……的”

loss-free

無(wú)損耗的；dust-free

無(wú)塵的。8.–ics

名詞詞尾，表示學(xué)科名稱

physics

物理學(xué)；mathematics

數(shù)學(xué)；

electronics電子學(xué)。VocabularyCharacteristicII9.–ity

構(gòu)成抽象名詞，表示“性，度”

stability

穩(wěn)定性；reli