等離子技術(shù)培訓(xùn)

等離子技術(shù)講座:

等離子原理及其應(yīng)用PLASMATRAININGPROGRAM目錄Agenda等離子技術(shù)在高級封裝工業(yè)的應(yīng)用

ApplicationofPlasmaTechnologyinAdvancedPackagingIndustries.等離子技術(shù)簡介

IntroductiontoPlasmaTechnology

March公司產(chǎn)品介紹

ProductsofMarchPlasmaSystems

等離子技術(shù)在高級封裝工業(yè)的應(yīng)用PlasmaApplicationinAdvancedPackagingIndustries綜述Overview:微電子工業(yè)MicroelectronicIndustryFlash,EEPROMDRAM,SRAMAnalog/LinearMicrocontrollers,Microprocessors,MicroperipheralsASIC光電子工業(yè)OptoelectronicIndustryLaserDiodesFiberAssemblyHermeticPackagingMEMS印刷電路工業(yè)PrintedCircuitIndustryPrintedCircuitBoard集成電路封裝面臨的挑戰(zhàn)

ICAssemblyandPackaging:SpecificChallenges不良的芯片粘結(jié)PoorDieAttachInsufficientHeatDissipationDuetoPoorDieAttach不良的導(dǎo)線連接強(qiáng)度PoorWireBondStrengthContaminationonBondPad覆晶填料FlipChipUnderfillFilletHeightofUnderfillVoidinFlipChipUnderfill剝離DelaminationLaminateMaterialsReleasingMoistureMetalLeadframeOxidation印刷電路板孔中的殘余物SmearinginPrintedCircuitBoards打印記號Marking等離子體應(yīng)用

PlasmaApplications表面污染物去除ContaminationRemovalWireBondingEncapsulationBallAttach(ContaminationSources:Fluorine,NickelHydroxide,Photoresist,EpoxyPaste,OrganicSolventResidue,smearinPCB,andscum)表面活化SurfaceActivationDieAttachEncapsulationFlipChipUnderfillMarking表面改性和刻蝕SurfaceModificationandEtchFluxlessSolderingCladdinglayerremovalonfiber表面活化:芯片粘結(jié)

SurfaceActivation:DieAttachProperDieAttachCriticalHeatDissipationDelaminationPlasmaTreatmentofSubstratePriortoDieAttachPromotesAdhesionofEpoxyRemovesOxidationForGoodSolderReflowBetterBondBetweenDieandSubstrateBetterHeatDissipationMinimizesDelamination污染物去除:導(dǎo)線連接

ContaminationRemoval:WireBondingPoorWireBondStrengthContaminationOxidationSmallerBondPadPitches80mmto25mmHigherRatioofContaminationtoPadandWireDeformationWeldingInhibitedByPhysicalProcess:ContaminantsActAsPhysicalBarrierChemicalProcess:ContaminantsFormBondsWithSurfacesandMinimizeAdhesionEpoxyResinBleedout污染物去除:導(dǎo)線連接

ContaminationRemoval:WireBondingPlasmaProcessingRemovesTraceContaminationandOxidationFromSubstratesMetalCeramicPlasticWireBondStrengthSignificantlyIncreasedThroughputIncreased:LowerPressureRequired污染物去除和表面活化:封裝

ContaminationRemovalandSurfaceActivation:EncapsulationMoldingCompoundMustAdhereToDifferentCompoundsSubstrateMaterialSolderMaskDieMetalBondPadsSeveralMaterialsBondingtoOneAnotherDelaminationCanResultFromPoorSurfaceActivityandContaminationDelaminationBiggestChallengeForOrganicBasedSubstratesLaminateMaterialsAbsorbWaterFromAirandtheFluxResidueRemovalProcessTrappedMoistureReleasedFromHighTemperatures:UseorSolderingOxidationonMetalLeadframesCanInhibitAdhesionofFrametoMoldPlasmaTreatmentofBGAPackages,OtherPolymerSubstrates,andMetalLeadframesImprovesSurfaceActivityAchievesGoodAdhesionMinimizesDelamination污染物去除和表面活化:封裝

ContaminationRemovalandSurfaceActivation:Encapsulation表面活化:填料

SurfaceActivation:UnderfillUnderfillRequiredinFlipChipMinimizeThermalCoefficientofExpansion(CTE)MismatchBetweenDieandSubstrateChallengeVoidFreeWickingSpeedDifficultwithLargeDiesandHighDensityBallPlacementPlasmaTreatmentIncreasesSurfaceEnergyPromotesAdhesionIncreasingWickingSpeedsDecreasedVoidingPresenceofOxidesInhibitsWireBondingLimitsGoodDieAttachmentInhibitsSolderReflowPlasmaTreatmentReducesMetalOxidesImprovesWireBondStrengthImprovesDieAttachmentImprovesSolderReflow氧化物去除

OxidesRemoval印刷線路板上的殘余物清除

DesmearinginPCBSmearinginPrintedCircuitBoards(PCB)ViasMechanicallyorLaserDrilledLaminateMaterial(EpoxyResin)IsSmearedOverEdgesOfInnerMetalConductorLinesSubsequentPlatingOfTheViasMustElectricallyConnectAllTheConductorLinesSmearedResinMustBeRemovedToEnsureGoodElectricalContactPlasmaTreatmentRemovestheEpoxyResinsProducingCarbonDioxideandWater集成電路封裝中等離子工藝的應(yīng)用

ICAssemblyandPackaging:PlasmaSolutionsImprovesDieAttachImprovedWireBondStrengthWithMinimalProcessRequirementsEffectiveEncapsulationofMetalandOrganicBasedPackagesMinimizesVoidsinFlipChipUnderfillDesmearinginPrintedCircuitBoards等離子工藝的其它應(yīng)用

OtherPlasmaApplicationsSurfaceActivationofNumerousMaterials:Polymers,andMetals材料表面的活化ThinFilmEtch:Al,Si,SiO2,Si3N4,W,WSixOrganicRemoval去除有機(jī)污染物OxideRemoval去除氧化物ResidualFluorineRemoval去除氟的殘物HydrophilationHydrophobationPlasmapolymerizationPECVD關(guān)鍵參數(shù)

CriticalProductParametersProductType處理方式Metalvs.LaminateChemicalSensitivityTemperatureSensitivityProductHandling產(chǎn)品放置MagazineSingleStripProcessRequired工藝的要求ContaminationRemovalSurfaceActivationThroughput產(chǎn)量的要求Uniformity均勻性要求等離子工藝參數(shù)

ParametersForPlasmaProcessingPowerSupplyFrequencyandPower電源的功率和頻率ChamberandElectrodeConfiguration腔體的結(jié)構(gòu)Pressure氣壓GasandConcentration工藝氣體的選擇Time處理的時間PumpingSpeed真空泵的速度ProductPositioning產(chǎn)品的位置ParametersFunctionofProductType單一工藝不適合所有的應(yīng)用

SingleProcessWillNotWorkForAllApplications等離子技術(shù)及集成電路封裝工藝的知識是成功應(yīng)用的關(guān)鍵

KnowledgeOfICPackageandPlasmaTechnologyCriticalForSuccessfulApplicationMARCH擁有等離子應(yīng)用的專家解決你的問題MarchMaintainsExpertsTrainedInPlasmaTechnologyToSolveYourProblemMarch等離子技術(shù)PlasmaTechnology等離子體簡述

Plasma:What,Why,How什么是等離子體What?GasPhaseMixtureConsistsof:Neutral,PhysicallyActiveandChemicallyReactiveSpecies如何工作How? ByPhysicalBombardmentandChemicalReactiontoRemoveContaminationActivateSurfaceEtch

為什么要用等離子體技術(shù)Why?ImprovesYieldsandEnhancesReliabilityofICPackagesImprovesAdhesionofWireBonds,DieAttach,andMoldingEaseofUse,EnvironmentallyBenign,LowCoO什么是等離子體

WhatisaPlasma?FourthStateofMatter固態(tài)

液態(tài)

氣態(tài)

等離子態(tài)SolidLiquidGasPlasma

EnergyEnergy

Energy什么是等離子體

WhatisaPlasma?等離子體的組成

ComponentsofaPlasma電子Electrons離子IonsPositiveAr+e-Ar++2e-

NegativeCl2+2e-2Cl-

自由基FreeRadicals:CH4+e-

.CH3+.H+e-光子PhotonsAr+e-Ar*+e-Ar+e-+hn

中性粒子Neutrals等離子體特性

PlasmaProperties高能量態(tài)

HighEnergyStatePhysicalWorkChemicalWork電中性的

ElectricallyNeutralEqualNumbersOfPositiveandNegativeSpeciesDegreeofDissociation=0.1-0.01%ElectricallyConductive表面反應(yīng)機(jī)理:物理反應(yīng)

SurfaceReactionMechanisms:PhysicalPhysicalSputtering-ArgonPlasmaSubstratePlacedon(-)ElectrodeAr+IonAttractedto(-)ElectrodeImpactForceRemovesContaminationAdvantagesNon-ChemicalReaction:NoOxidationPureSubstrateRemainingDisadvantages-EasytoMinimizeSubstrateDamage:Impact,andOverheatingPoorSelectivityLowEtchRateContaminantRedeposition表面反應(yīng)機(jī)理:化學(xué)反應(yīng)

SurfaceReactionMechanisms:ChemicalPlasmaGeneratedReactive ChemicalSpeciesSourceChemicalsInclude: H2,O2andCF4IonizedSourceChemical ProducesReactiveSpeciesGasPhaseProductsProducedFromReactions

withSubstrateSurfaceAdvantagesHighCleaningSpeedHighSelectivityEffectiveforOrganicContaminantsDisadvantages-OxidesCanBeProduced表面反應(yīng)總結(jié)

SummaryofSurfaceReactionMechanisms等離子技術(shù)的優(yōu)點(diǎn)

AdvantagesofPlasmaTreatmentVeryEffectiveforSurfaceCleaning,Activation,andEtchingEnvironmentallyFriendly-LowGasFlowNon-Hazardous非危險NoAqueousChemicalsUsedNoPersonnelExposuretoChemicalsThreeDimensionalTreatmentCapability(3D處理)ControllableLowCostOfOwnershipMinimalMaintenanceEaseofUse-AutomatedHighUniformityandReproducibility等離子工藝

PlasmaProcess氣相---固相表面相互作用

GasPhase-SolidPhaseInteractionPhysicalandChemical分子級污染物去除

MolecularLevelRemovalofContaminants30to300Angstroms可去除污染物包括ContaminantsRemoved難去除污染物包括DifficultContaminants

FingerPrintsFluxGrossContaminantsOxidesEpoxySolderMaskOrganicResiduePhotoresistMetalSalts(NickelHydroxide)等離子體的產(chǎn)生

GeneratingaPlasma等離子體的產(chǎn)生

GeneratingaPlasmaGasToBeIonizedChamberWithElectrodesMaterialsAluminumStainlessSteelGlass:Quartz,PyrexConfigurationBarrelCylindricalUsuallyGlassExternalElectrodesParallelPlateBoxInternalElectrodes:Powered,Grounded,orFloatingCustom等離子體的產(chǎn)生

GeneratingaPlasmaVacuumPumpMilliTorrProcessRequirements(50mTorr-500mTorr)RapidlyRemoveByproductsRotaryVanePumpRootsBlowerPowerSupplyEnergySourceVariousFrequencies2.45GHz13.56MHz40kHzDCVariousPowers等離子體的重要特性

ImportantPropertiesofaPlasma等離子工藝優(yōu)化

EffectivePlasmaProcessingRequiresOptimum:PhysicalProcessesChemicalProcesses等離子工藝參數(shù)

PlasmaPropertiesThatDictateProcessPerformance:IonDensityIonEnergyDCBias等離子體的電子和離子特性

PlasmaElectronandIonProperties離子密度

IonDensityNumberofIonsperUnitVolumeTypically1Ionper10,000Neutrals100Radicalsper10,000NeutralsHigherIonDensity=HigherNumberofReactiveSpeciesHighNumberofActiveSpecies= IncreasedSpeed, andUniformityRequiresEfficientCouplingofPower等離子體的電子和離子特性

PlasmaElectronandIonProperties離子能量

IonEnergyEnergyofIonToDoWork=SputteringSputteringChargedSpeciesCollidesWithSurfaceEnergySufficientToBreakBondsSurfaceMaterialReleasedNarrowRangeExcessIonEnergy=UnwantedSputteringTooLowIonEnergy=NoSputteringorSlowProcess等離子體的電子和離子特性

PlasmaElectronandIonProperties直流偏壓

SelfDCBiasNegativeDCBiasAtPowerElectrodeCapacitivelyCoupledElectronsRespondtoAlternatingElectricalFieldCapacitorPreventsElectronFlowAtPowerElectrodeElectronsAtGroundElectrodeFlowToGroundPotentialElectronBuildUpAtElectrodeCausesPotentialDifferenceBetweenPoweredandGroundElectrodes=SelfDCBiasDCBiasIncreasesIonEnergyDirectionalityofIonsImportantParameters:Pressure,Power,ProcessGas等離子處理模型

PlasmaModesDirectSamplePlacedDirectlyInDischargeSamplesPlacedOnGroundorPowered Electrodes:ApplicationDependentAggressiveDownstream(Shielded)PlasmaGeneratedDownstreamOfSamplesGasPhaseActiveSpeciesDirectedToSampleIonsRemovedRadicalsandPhotonsPerformWorkReactiveIonEtch(RIE)DirectandAnisotropicSamplesPlacedOnPoweredElectrode:SelfBiasDirectPlasma:Argon(Ar)DirectPlasma:Oxygen(O2)Downstream:Ion-FreePlasmaDownstream:Ion-FreePlasma等離子處理模型

PlasmaModesReactiveIonEtch(RIE)DirectandAnisotropicSamplesPlacedOnPoweredElectrode:SelfBias成功應(yīng)用的關(guān)鍵參數(shù)

CriticalParametersForSuccessfulApplicationPowerSupplyFrequencyandPowerChamberandElectrodeConfigurationPressureGasandConcentrationTimePumpingSpeedProductPositioningParametersFunctionofProductType電源功率及頻率

PowerSupplyFrequencyandPowerGeneralTrend:HigherFrequency=LowerIonEnergyHigherFrequency=HigherIonDensityHigherPowerIncreasesEtchRateIncreasesTemperaturePowerSuppliesDCLowFrequency(40kHz-100kHz)MediumFrequency(13.56MHz)HighFrequency(2.45GHz)為什么選擇頻率13.56MHz?Frequency:Why13.56MHz?IonEnergyIonDensityPowerFrequencyDC 40-100kHz 13.56MHz 2.45GHz真空腔及電極組合

ChamberandElectrodeConfigurationBarrelExternalElectrodesNon-UniformPlasmaParallelPlateInternalElectrodesPolarityPoweredHigherEtchRate,HigherTemperature,LowerUniformityGroundLowerEtchRate,LowerTemperature,HigherUniformityFloating氣體及濃度

GasandConcentrationArgon(Ar)InertPhysicalProcess:SurfaceBombardmentAr+e-Ar++2e-Ar++ContaminantVolatileContaminantTwotoFiveNanometersRemovedApplications:OxideRemoval,EpoxyBleedoutOxygen(O2)ChemicalProcess:OxidationofNon-VolatileOrganicsO2+e-2O.+e-O.+OrganicCO2+H2ORateFunctionofGasConcentration=HighPressureCanOxidizeSurfacesandDamageLaminatesMinimizeWithArorAr/O2氣體及濃度

GasandConcentrationHydrogen(H2)ChemicalProcessApplicationsRemoveOxidationOnMetalsCleanMetalsWithoutOxidationCarbonTetrafluoride(CF4)NormallyMixedWithOxygenChemicalProcessFreeRadicalsReact=CO2,H2O,andHFHigherEtchRate=HigherPressureOtherGases:Helium,Nitrogen,FormingGas,SulfurHexafluoride氣體及濃度

GasandConcentration化學(xué)清洗工藝化學(xué)清洗工藝物理清洗工藝氣體壓力

PressureAverageForceOfGasMoleculesOnChamberWallChamberPressureGasFlowOutgassingRatePumpingSpeedInGeneralHigherPressures(200-800mTorr)=ChemicalProcessesHigherPressure=LargerConcentrationofReactiveSpeciesHighConcentration=FasterEtchRatesLowerPressures(50-200mTorr)=PhysicalProcessesLowerPressure=LongerMeanFreePathLongMeanFreePath=HigherEnergyOfIons處理時間

ProcessingTimeLongerProcessTime=MoreMaterialRemovedBalanceProcessTimeWithPower:HigherPower=FasterEtchRatePressure:HigherPressure=FasterEtchRateGasTypeandConcentrationChamberElectrodeConfigurationMinimizeTime=MaximizeThroughput樣品位置

ProductPositioningDirectOpenPlacementOnShelvesCarrierorMagazine

RequireLowerPressuresForLongerMeanFreePathsEasyToGetReactiveSpeciesIntoCarrierChemicalOrPhysicalProcessPitchIsCriticalUniformityChallenges在清洗盒中處理TreatmentIn

MagazineTypicalPlasmaCondition:Lowsystempressure(about100mTorr)isrequired.IncreasethemeanfreepathDecreasethehotspotsinchamberPitchshouldbelargerthan6mm.Theopenslotonthesidewallofmagazineisrequired.真空泵速度

PumpingSpeedPumpRequiredToMaintainVacuumSweepAwayPlasmaByproductsMinimizeRe-contamination等離子工藝中可能的問題:溫度

PlasmaProblems:TemperaturePlasticPartsareSusceptibletoHighTemperatureFactorsThatEffectTemperatureSubstrateMaterialofConstructionConductive-MetalLeadframesNonconductive-BGAPlacementofPartsonElectrodeGround:CoolerTemperature,LongerProcessTimesPowered:HotterTemperature,ShorterProcessTimesProcessPowerandFrequencyHigherPower=HigherTemperatureLowerFrequency=HigherTemperature40kHz>>13.56MHzProcessGasandGasFlowHigherGasFlow=LowerTemperature等離子工藝中可能的問題:溫度

PossibleProblemsInPlasma:TemperatureFactorsThatEffectTemperatureProcessTimeLongerProcessTime=HigherTemperatureChamberTemperatureTypically<1250CPXProductLineHasOptionalLiquidCooledShelves等離子工藝中可能的問題

PossibleProbleminPlasma均勻度UniformityGasSupplyandRemovalShouldBeUniformChemicalProcessesTypicallyHaveHigherUniformityLongerMeanFreePath-LowerPressuresForPhysicalProcessesCanHelp表面變色DiscolorationHeatBuildUpComplexPartsCanCreatePlasmaHotSpots處理壽命TreatmentLongevity FunctionOfSubstrateMaterialHumidityOutgassingofPlasticizersandMoldReleaseCompounds等離子工藝中可能的問題

PossibleProblemsInPlasma荷載影響

LoadingEffectMaterialsOutgasUnderVacuumEffectsPumpDownTimeBasePressureDisplaceProcessGasesAmountofSubstrateMaterialinChamberEffectsProcessMaterialQuantityCanAffectPlasmaDensityGasSupplyCouldBeInsufficient副產(chǎn)品

ByproductsOvertime,CF4WillPolymerizeOnChamberWallsandCanDepositonTheSubstrateSurfaces表面接觸角檢測

ContactAngleMeasurements(CAM)ContactAngleIndicatesSurfaceEnergyCharacterizesInterfacialTensionSolid-LiquidDropLowSurfaceEnergySolid(Hydrophobic)LiquidSurfaceTension>SolidSurfaceEnergyLiquidFormsSphericalShapeHighSurfaceEnergySolid(Hydrophilic)LiquidSurfaceTension<SolidSurfaceEnergyLiquidFormsLowProfileFlatterDropletViewDropletsOfLiquidOnSurfaceLineTangentToCurveOfDropletAngleBetweenTangentLineandSolidSurfaceMarch等離子技術(shù)PlasmaTechnology(NotAllPlasmaSystemsAreTheSame)+集成電路封裝技術(shù)ICPackagingTechnology(NotAllPackagesAreTheSame)成功應(yīng)用SuccessfulApplicationofPlasmaTechnologyforIntegratedCircuitPackagingMarch產(chǎn)品MarchProductsBatchvs.AutomatedEquipmentSolutionsAP-1000e8AP-1000BatchSystemSolutions

AP-1000FlexibleShelfConfigurationCompleteSystemEnclosurePLCControllerVerticalDoorOptione8OptionCEandSEMIS2-93CompliantApplicationsMagazineTreatmentAuerBoatProcessingWaferCleaningMCMCarriersBoardsAP1000VerticalDoor

HigherthroughputsImproveduniformityMatrix/ArrayPkgsMetalLeadframesAP-1000e8MultiTRAKITRAKAutomatedSystemSolutionsXTRAK

AutomatedSystemSolutionsUnparalleledUniformityCompactChamberDesignBalancedGasFlowUniqueVacuumExhaustGuaranteedRepeatabilityStripbyStripProcessingClosedorOpenMagazinesNoPitchRestrictionsSpeedTotalOverheadTime:SecondsInfeedVacuumandPlasmaOutfeed

StripSizedChamber

ITRAKWidth38-78mmLength178mm-235mmXTRAKWidth16-154mmLength76-305mmPLCControlledwithTouchScreenIntuitiveGraphicalUserInterfaceStatisticalDataGathering(SEMIE-10)CompleteSystemEnclos