Flipchip工藝流程演示文稿

Flipchip工藝流程演示文稿現(xiàn)在是1頁\一共有33頁\編輯于星期日優(yōu)選Flipchip工藝流程現(xiàn)在是2頁\一共有33頁\編輯于星期日1.Metalbump金屬凸塊-C4process(IBM)2.Tape-Automatedbonding捲帶接合-ACFprocess3.Anisotropicconductiveadhesives

異方向性導(dǎo)電膠-ACPprocess4.Polymerbump高分子凸塊-C4process5.Studbump.打線成球-ACPprocess(Matsushita)FlipChipconductivemethod-connecttoSubstrate/PCBC4:controlledcollapsechipconnectionACF:anisotropicconductivefilmACP(ACA):anisotropicconductiveAdhesivepasteKingbondTrainingCourse現(xiàn)在是3頁\一共有33頁\編輯于星期日KingbondTrainingCourseVariousflipchiptechnologiesPS:WIT(Wireinterconnecttechnology)TAB(Tape-automatedbonding)現(xiàn)在是4頁\一共有33頁\編輯于星期日KingbondTrainingCourseVariousflipchiptechnologies現(xiàn)在是5頁\一共有33頁\編輯于星期日KingbondTrainingCourseStudBumpFlipChipBondUnderfillCureovenCureovenSBBProcess現(xiàn)在是6頁\一共有33頁\編輯于星期日C4:ControlledCollapseChipConnectionProcessKingbondTrainingCourseReflowovenFlipchipbonderFluxcleanerUnderfilldispenserCureoven1.Fluxcoatingorre-printing2.MountingHeatingCleaningDispensingHeatingWaferbumpBumpbysolder現(xiàn)在是7頁\一共有33頁\編輯于星期日ACP:AnisotropicConductivePasteProcessReflowovenFlipchipbonderUnderfilldispenserCureovenThermosettingDispensingHeating1.PrinttheACA2.AlignmentWaferbumpBumpbyAgKingbondTrainingCourse現(xiàn)在是8頁\一共有33頁\編輯于星期日ACF:AnisotropicConductiveFilmProcessACFPre-setterFlipchipbonderPressandcureequipmentACFPre-setting1.Mounting2.Heating3.Press1.Heating2.PressWaferbumpBumpbyAuKingbondTrainingCourse現(xiàn)在是9頁\一共有33頁\編輯于星期日Overcoatwithpolymideandopenthebumpareas.PatternwettablebasemetalCoatchipwithpolymide,openviasovereachpadUseddry-filmlift-offprocesstodefinebasemetalandsolderoneachpadPatternaluminumtore-routeI/OtoonareaarrayConventionalchipwithaluminumI/OpadsaroundtheperimeterTack,Flux&ReflowPrint,Place&ReflowKingbondTrainingCourse現(xiàn)在是10頁\一共有33頁\編輯于星期日FCTBumpStructureSiliconwaferUBM-UnderBumpMetallurgySolderBumpFinalMetalPadDiePassivationWaferBumpKingbondTrainingCourse現(xiàn)在是11頁\一共有33頁\編輯于星期日1.蒸鍍Evaporation2.濺鍍Sputter3.電鍍Electroplating4.印刷Printedsolderpastebump5.錫球焊接SolderballbumpingorStudbumpbonding(SBB)6.無電鍍鎳ElectrolessnickeltechnologiesMetalbumpmethodUBMKingbondTrainingCourse現(xiàn)在是12頁\一共有33頁\編輯于星期日1.95Sn/5Pb,97Sn/3Pb高溫錫鉛合金2.63Sn/37Pb低溫錫鉛合金3.Ni鎳4.Au金5.Cu銅MaterialofsolderbumpKingbondTrainingCourse現(xiàn)在是13頁\一共有33頁\編輯于星期日SiliconWaferarriveswithanaluminumbasedfinalmetalpadanddiepassivation.Wafercanbeprobedpriortobumping.Waferbump(Printedmethod)Process:WafercleanKingbondTrainingCourse現(xiàn)在是14頁\一共有33頁\編輯于星期日TheUnderBumpMetallurgyisaddedbyFCTthroughsputteredlayersofAl,Ni-V,&CuWaferBump(Printedmethod)Process:SputterUBMAl/Ni/Cu(Au)KingbondTrainingCourse現(xiàn)在是15頁\一共有33頁\編輯于星期日UBMconsist3layer:1.Adhesionlayer:Ti,Cr,TiW提供鋁墊(Alpad)與護(hù)層(Passivationlayer)有較強(qiáng)之黏著性2.Wettinglayer:Ni,Cu,Mo,Pt高溫迴焊時(shí)錫球可完全沾附而成球3.Protectivelayer:Au保護(hù)Ni,Cu等免於被氧化.WaferBump(Evaporationmethod)Process:SputterUBMKingbondTrainingCourse現(xiàn)在是16頁\一共有33頁\編輯于星期日Applyphotoresist,PatternanddevelopWaferBump(Printedmethod)Process:Photo-resistKingbondTrainingCourse現(xiàn)在是17頁\一共有33頁\編輯于星期日EtchtoformUBMcapWaferBump(Printedmethod)Process:EtchUBMKingbondTrainingCourse現(xiàn)在是18頁\一共有33頁\編輯于星期日DepositsolderpasteandreflowtoformbumpWaferBump(Printedmethod)Process:Printsolderpaste&reflowSn/Pb63/37低溫95/5高溫KingbondTrainingCourse現(xiàn)在是19頁\一共有33頁\編輯于星期日Samplemeasurebumpheight,bumpshearandbumpresistance.WaferBump(Printedmethod)Process:InspectionKingbondTrainingCourse現(xiàn)在是20頁\一共有33頁\編輯于星期日1.Evaporativebumpsare125milsindiameterand100milshigh.2.Platedbumpsare125-175milsindiameterand25-100milshigh.Thetypicalsizeofabumpbeforereflow:KingbondTrainingCourse現(xiàn)在是21頁\一共有33頁\編輯于星期日製程名稱:晶片背面黏貼Wafermounting生產(chǎn)設(shè)備:晶片背面黏貼機(jī)檢驗(yàn)設(shè)備:顯微鏡製程說明:將膠帶黏貼於晶片背面,避免晶片切割時(shí)分離.設(shè)備名稱:檢驗(yàn)重點(diǎn)項(xiàng)目:1.晶片方向Dieorientation2.氣泡Airbubble3.表面皺紋Wrinkle製程圖例:?？蚓琄ingbondTrainingCourse現(xiàn)在是22頁\一共有33頁\編輯于星期日Process:InspectwaferKingbondTrainingCourse現(xiàn)在是23頁\一共有33頁\編輯于星期日晶片切割DieSaw生產(chǎn)設(shè)備:晶片切割機(jī)檢驗(yàn)設(shè)備:顯微鏡製程說明:依據(jù)晶粒尺寸大小,利用切割刀具,將晶片切割成單顆的晶粒.1.切割道寬度Streetwidth2.崩裂Crack製程圖例:晶粒晶片設(shè)備名稱:檢驗(yàn)重點(diǎn)項(xiàng)目:KingbondTrainingCourse現(xiàn)在是24頁\一共有33頁\編輯于星期日上晶片F(xiàn)lipChip生產(chǎn)設(shè)備:晶片上片機(jī)檢驗(yàn)設(shè)備:X-RAY影像觀測(cè)機(jī)製程說明:依據(jù)晶粒尺寸大小,利用上晶片機(jī)將單顆的晶粒,分別植入基板或模組.1.Bump定位與焊接情形2.晶片崩裂Crack,有無短路,斷路製程圖例:設(shè)備名稱:檢驗(yàn)重點(diǎn)項(xiàng)目:ChipBumpSubstrate/ModuleKingbondTrainingCourse現(xiàn)在是25頁\一共有33頁\編輯于星期日上晶片流程FlipChipflowPickupFlipPrecisionAddedFluxBonding/Reflow基板/模組C4processKingbondTrainingCourse現(xiàn)在是26頁\一共有33頁\編輯于星期日上晶片流程FlipChipflowPickupFlipPrecisionAddedfilm/pasteBondingwithheating基板/模組ACF&ACPKingbondTrainingCourse現(xiàn)在是27頁\一共有33頁\編輯于星期日填膠Under-fill設(shè)備名稱:生產(chǎn)設(shè)備:填膠機(jī)檢驗(yàn)設(shè)備:X-RAY影像觀測(cè)機(jī)製程說明:利用填膠機(jī)將已完成植入基板或模組之每單顆的晶粒,分別以填膠注入.1.有無球脫或晶圓偏移製程圖例:檢驗(yàn)重點(diǎn)項(xiàng)目:KingbondTrainingCourse現(xiàn)在是28頁\一共有33頁\編輯于星期日

WhydoyouneedtounderfillSolderjointreliabilityforflipchipsisbasedonseveralfactors:1.Bumpalloytype2.Solderjointheight(standoff)3.DistancetoneutralpointorDNP.(Ameasurementofthecenterofmassofthedietothefarthestbumponthedie,typicallythecornerbump.)KingbondTrainingCourse現(xiàn)在是29頁\一共有33頁\編輯于星期日填膠製程Under-fill1.毛細(xì)作用型Capillarytype):利用毛細(xì)力造成膠材之流動(dòng).2.異方向?qū)щ娔z(Anisotropicconductiveadhesive):低溫製程,分膏狀(paste)和膜狀(film)3.前置型(Pre-appliedtype):小尺寸晶片(<6mm),點(diǎn)膠(Dieattachment)後再迴焊(Reflow)Kin