原子層沉積法的原理和應(yīng)用PPT

1、PPT DESIGNAtomic Layer Deposition (ALD) 楊楊 超、包超、包 峰、方峰、方 聰、蔣博瀚、馬聰、蔣博瀚、馬 紅石紅石 李勇輝、王李勇輝、王 謙、徐謙、徐 晨、于晨、于 浩、浩、 趙燦燦趙燦燦 Shanghai Institute of CeramicsSynthetic Chemistry of MaterialsPPT DESIGNOutlineOutline1.Introduction to ALD2.Classical models: ALD of Al2O33.ALD and CVD4.Applications of ALD (1)Coatings

2、on high aspect ratio structures (2)Coatings on Nanoparticles (3)Combination of CNT (4)Plasma ALD 5. Expectations and challenge in ALD PPT DESIGN2. Classical models: ALD of Al2O3 The overall reaction for Al2O3 ALD 2Al(CH3)3+ 3H2O Al2O3+3CH4 H=376 kcal The surface chemistry during Al2O3 ALD (a) AlOH*

3、+ Al(CH3)3 AlOAl(CH3)2*+CH4 (b) AlCH3* + H2O AlOH*+CH4 PPT DESIGN5High repeatability and expansibility6Substrate（Large and high aspect ratio）4Pinhole-free films3 Conformal deposition2Self-limiting1Atomic level control1. Introduction to ALDAtomic layer deposition （ALD） atomic level control of film de

4、positionPPT DESIGN3. Comparison of ALD and CVDSchematic pressure profile during the ALD and CVD processSeung-Mo Lee et al., ChemPhysChem, 12, 791-798(2011)PPT DESIGN3. Comparison of ALD and CVDALDCVDPPT DESIGN12M. Knaut, et al. Microelectron Eng, 107, 80-83 (2013)4.1 Coatings on high aspect ratio st

5、ructuresCoating on step-like sructures1 Coating on multi-pore structures2PPT DESIGN4.2 Coatings on nanoparticles PS spheres self assembledALD of TiCl4 and H2OIon millingEtching PS hemispheresAnnealingXu Dong Wang et al., Nano letters Vol.4,No.11 (2004)PPT DESIGN4.2 Coatings on nanoparticles ALD Cycl

6、es Bowl Thickness PS Spheres Bowl SizePPT DESIGN4.3 Combination of CNT and super-black coatingsPPT DESIGNSchematic illustration of the ALD and CVD process for the synthesis of CNT arraysSchematic representation of Al2O3 ALD coating on monodispersed NPs.4.3 Combination of CNT and super-black coatings

7、Kai Zhou, et al., Nanoscale Res Lett, 5:1555-1560(2010) Xin Wang, et al., ACS Appl. Mater. Interfaces,3: 4180-4184 (2011)PPT DESIGNImproved material propertiesfilm density, impurity content, electronic propertiesDeposition at reduced substrate temperaturesIncreased choice of precursors and materials

8、Good control of stoichiometry and composition operating pressure, power, exposure time, biasing voltageIncreased growth rate4.4 Merits of Plasma-Assisted ALDN. Leick, J. Vac. Sci. Technol. A 29, 021016 (2011)vMeritsPPT DESIGNb. Direct plasma ALDc. Remote plasma ALDd. Direct plasma reactor with mesha

9、. Radical-enhanced ALD4.4 Plasma-Assisted ALD ConfigurationsAssisting an ALD process by means of a plasma step:Fig Various reactor configurations for plasma-assisted ALDN. Leick, J. Vac. Sci. Technol. A 29, 021016 (2011)PPT DESIGNSteven M. George, Chemical Reviews,110,111-131( 2010)ChallengesControl

10、ling the dosagesDifferent multi-metal deposition Different oxide doped depositionDecomposingReasonable vapor pressureReaction is between the precursors and the matrixesApplied to the mass productionLow deposition rate100-300nm/h2.Chemical requirements1. Low deposition rate3. Complexity5.1 Challenges of ALDPPT DESIGN The future prospects for ALD are very promisi