Silvaco-TCAD-工藝仿真2PPT課件

1、2021/7/23學習1Tang shaohua, SCUE-Mail: 2021/7/23學習2上一講知識回顧熟悉仿真流程1、建立仿真網(wǎng)格2、仿真初始化3、工藝步驟4、抽取特性5、結(jié)構(gòu)操作6、Tonyplot顯示go athenaLine x loc=0.0 spac=0.02Line x loc=1.0 spac=0.10Line y loc=0.0 spac=0.02Line y loc=2.0 spac=0.20init two.dDiffuse time=30 temp=1200 dryo2extract name=Tox thickness oxide mat.occno=1 x.

2、val=0tonyplot quit小試牛刀之Diffuse做氧化優(yōu)化2021/7/23學習3這一講的安排介紹各個工藝的參數(shù)及其意義舉例說明這些工藝有：離子注入，擴散，淀積，刻蝕，外延和拋光2021/7/23學習4離子注入命令implant，參數(shù)及說明如下：2021/7/23學習5離子注入的參數(shù)及說明離子注入的幾何說明：注入面：表面：仿真面：Tilt angle：Rotation angle：2021/7/23學習6離子注入的例句Implant phosph dose=1e14 energy=100 tilt=15Implant boron dose=1e13 energy=50 tilt=0

3、 s.oxide=0.005 Implant boron dose=1e13 energy=300 bca tilt=0 rotation=0 Analytical 注入：SVDP注入（s.oxide為屏氧厚度）：Monte Carlo注入：Implant boron dose=1e14 energy=50 unit.damage dam.factor=0.1 注入損傷：2021/7/23學習7離子注入的例子go athenaLine x loc=0.0 spac=0.02Line x loc=1.0 spac=0.10Line y loc=0.0 spac=0.02Line y loc=2.

4、0 spac=0.20init silicon c.boron=1e16 two.dImplant phosph dose=1e13 energy=50 tilt=7 unit.damage dam.factor=0.05extract name=xj xj material=Silicon” mat.occno=1 x.val=0.05 junc.occno=1tonyplot 抽取得到結(jié)深 Xj0.267678m把spac=0.02 換成0.1看有什么不同2021/7/23學習8擴散命令diffuse，參數(shù)及說明如下：2021/7/23學習9擴散的例句Diffuse time=1 hour

5、 temp=1000 c.boron=1e20Diffuse time=30 temp=1200 weto2Diffuse time=2 temp=800 t.final=1200 nitro press=2Diffuse time=20 temp=1200 nitro press=2Diffuse time=2 temp=1200 t.final=800 nitro press=2Diffuse time=1 temp=1000 nitro press=1.5磷的預沉積：濕氧氧化（也可以定義氣流）：變溫擴散：快速熱退火（RTA）：高級的擴散模型：Method plsDiffuse time=

6、1 hour temp=950 nitro c.phos=1e20 tsave=1 tsave.mult=10 dump.predep=predep2021/7/23學習10擴散的例子go athenaLine x loc=0.0 spac=0.02Line x loc=1.0 spac=0.10Line y loc=0.0 spac=0.1Line y loc=2.0 spac=0.20init silicon c.boron=1e16 two.dMethod plsDiffuse time=1 hour temp=950 nitro c.phos=1e20 tsave=1 tsave.mu

7、lt=10 dump.prefix=predeptonyplot predep*.strtonyplot -overlay predep*.str2021/7/23學習11淀積命令deposit。參數(shù)及其說明如下：2021/7/23學習12淀積參數(shù)及例句Deposit oxide thick=0.1 dy=0.01 ydy=0.05Deposit oxide thick=0.1 div=10淀積，網(wǎng)格控制：Deposit material=BPSG thick=.1 c.boron=1e20 c.phos=1e20淀積BPSG：Rate.depo machine=MOCVD cvd dep.r

8、ate=0.1 u.m step.cov=0.75 tungstenDeposit machine=MOCVD time=1 minute淀積，網(wǎng)格控制：2021/7/23學習13淀積的例子（網(wǎng)格）Deposit oxide thick=0.1 div=10Deposit oxide thick=0.1 dy=0.03 ydy=0.05Deposit oxide thick=0.1 dy=0.06 ydy=0.05go athenaLine x loc=0.0 spac=0.02Line x loc=1.0 spac=0.10Line y loc=0.0 spac=0.02Line y loc

9、=2.0 spac=0.20init silicon c.boron=1e16 two.dtonyplot Deposit oxide thick=0.1 dy=0.01 ydy=0.05Note: The number of grid divisions has not been specified. A non uniform grid with 14 divisions and 0.001 micron spacings at the top and bottom will be used.新淀積的層襯底ydydyDy和ydy示意圖網(wǎng)格線2021/7/23學習14刻蝕命令etch，參數(shù)有

10、：2021/7/23學習15刻蝕參數(shù)及其說明等離子體刻蝕RIE和濕法刻蝕2021/7/23學習16刻蝕參數(shù)及其說明Monte Carlo等離子刻蝕參數(shù)Isotropic只是一個速率，等方向性的速率。2021/7/23學習17簡單的例句go athenaLine x loc=0.0 spac=0.02Line x loc=1.0 spac=0.10Line y loc=0.0 spac=0.02Line y loc=2.0 spac=0.20init c.boron=1e16 two.ddeposit oxide thick=0.1 div=10deposit silicon thick=0.5

11、 div=10structure outfile=origin.strEtch silicon left p1.x=0.5 structure outfile=etch_p1x_0.5.strgo athena init infile=origin.strEtch silicon allstructure outfile=etch_all.strtonyplot origin.str etch_p1x_0.5.str etch_all.strEtch silicon left p1.x=0.5將x=0.5m往左的硅材料刻蝕掉：Etch silicon all曝露的硅全被刻蝕掉：2021/7/2

12、3學習18刻蝕的例子go athenaLine x loc=0.0 spac=0.05Line x loc=2.5 spac=0.02Line x loc=5.0 spac=0.05Line y loc=0.0 spac=0.02Line y loc=2.0 spac=0.20init c.boron=1e16 two.ddeposit oxide thick=0.5 div=10structure outfile=mask.strtonyplot mask.strEtch oxide start x=1.5 y=0.0Etch continue x=1.5 y=-0.6Etch contin

13、ue x=3.5 y=-0.6Etch done x=3.5 y=0.0(1.5,0)(3.5,0)刻蝕由點連起來的多邊形區(qū)域(1.5,-0.6)(3.5,-0.6)后面刻蝕的例子中掩膜即由此得到2021/7/23學習19刻蝕的例子go athenainit infile=mask.stretch .tonyplotEtch silicon thick=0.5刻蝕硅厚度0.5mEtch dry thick=0.3表面材料刻蝕掉0.3mRate.etch machine=wet silicon wet.etch isotropic=0.5 u.mEtch machine=wet time=2 m

14、inutes濕法刻蝕，各項異性比0.5Rate.etch machine=plasma1 silicon u.m rie isotropic=0.1 direct=0.9Etch machine=plasma1 time=1 minutesRIE刻蝕2021/7/23學習20刻蝕的例子go athenainit infile=mask.stretch .tonyplotRate.etch machine=PEMach plasma pressure=3.75 tgas=300 tion=3000 vpdc=32.5 vpac=32.5 lshdc=0.005 lshac=0.0 Freq=13

15、.56 nparticles=4000 mgas=40 mion=40 constant energy.div=50 qio=1.7e-19 qcht=2.1e-19Rate.etch machine=PEMach plasma material=silicon k.i=1.1Etch machine=PEMach time=1 minutes等離子體刻蝕：Rate.etch machine=MCETCH silicon mc.plasma ion.types=1 mc.part1=20000 mc.norm.t1=14.0 mc.lat.t1=2.0 mc.ion.cu1=15 mc.etc

16、h1=1e-05 mc.alb1=0.2 mc.plm.alb=0.5 mc.polympt=5000 mc.rflctdif=0.5 Etch machine=MCETCH time=1 minutes mc.sm=0.001 mc.redepo=f mc.dt.fact=2Monte Carlo刻蝕：2021/7/23學習21外延外延的命令epitaxy，參數(shù)及其說明如下：2021/7/23學習22外延的例子go athenainit infile=mask.strEpitaxy Structure outfile=Tonyplot *.str外延是硅的外延！Epitaxy time=1

17、temp=1000 c.boron=1e15 growth.rate=0.5外延速率的例子：Epitaxy time=1 temp=1000 thick=2 c.phos=1e15 dy=0.02 ydy=0.1 div=10網(wǎng)格控制的例子：2021/7/23學習23拋光拋光的命令polish，參數(shù)及說明如下：2021/7/23學習24拋光的例子go athenainit infile=mask.strRate.polish oxide machine=cmp u.m max.hard=0.15 min.hard=0.03 isotropic=0.001Polish machine=cmp time=4 minstructure outfile=polish.strtonyplot mask.str polish.str2021/7/23學習25光刻光刻的步驟及參數(shù)很多如mask，